Works matching IS 18414834 AND DT 2009 AND VI 6 AND IP 4
Results: 6
DEFECT ENERGY LEVELS IN a- Se<sub>80</sub>Te<sub>20</sub> AND a- Se<sub>80</sub>Te<sub>10</sub>Cd<sub>10</sub> CHALCOGENIDE THIN FILMS.
- Published in:
- Chalcogenide Letters, 2009, v. 6, n. 4, p. 181
- By:
- Publication type:
- Article
PREPARATION AND CHARACTERIZATION OF NANOCRYSTALLINE CdS THIN FILMS.
- Published in:
- Chalcogenide Letters, 2009, v. 6, n. 4, p. 171
- By:
- Publication type:
- Article
OPTICAL, STRUCTURAL AND ELECTRICAL PROPERTIES OF THE NEW ABSORBER Sn<sub>2</sub>Sb<sub>2</sub>S<sub>5</sub> THIN FILMS.
- Published in:
- Chalcogenide Letters, 2009, v. 6, n. 4, p. 163
- By:
- Publication type:
- Article
EFFECT OF ANTIMONY INCORPORATION IN CuInS<sub>2</sub> THIN FILMS.
- Published in:
- Chalcogenide Letters, 2009, v. 6, n. 4, p. 155
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- Publication type:
- Article
PHOTOELECTROCHEMICAL PERFORMANCE STUDIES OF CdSe: Sb ELECTROLYTE CELL.
- Published in:
- Chalcogenide Letters, 2009, v. 6, n. 4, p. 149
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- Publication type:
- Article
STUDY OF CHARGE DENSITY, DENSITY OF STATES AND ELECTRON MOMENTUM DENSITY OF ZnS<sub>x</sub>Se<sub>1-x</sub> SEMICONDUCTOR ALLOYS.
- Published in:
- Chalcogenide Letters, 2009, v. 6, n. 4, p. 137
- By:
- Publication type:
- Article