Works matching DE "SEMICONDUCTOR diodes"

Results: 800

Possibility of continuous wave mode dual frequency mid-infrared HgCdTe-based laser.

Published in:

Optical & Quantum Electronics, 2025, v. 57, n. 6, p. 1, doi. 10.1007/s11082-025-08291-0

By:

Dubinov, A. A.;
Aleshkin, V. Ya.;
Rumyantsev, V. V.;
Morozov, S. V.

Publication type:

Article

Possibility of continuous wave mode dual frequency mid-infrared HgCdTe-based laser.

Published in:

Optical & Quantum Electronics, 2025, v. 57, n. 6, p. 1, doi. 10.1007/s11082-025-08291-0

By:

Dubinov, A. A.;
Aleshkin, V. Ya.;
Rumyantsev, V. V.;
Morozov, S. V.

Publication type:

Article

THE CONDUCTING HOMOGENEITY OF ITO ELECTRODE AND WATER-SOLUBLE CONDUCTING POLYANILINE FILMS.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 6, p. 859, doi. 10.1142/S0219581X04002760

By:

WU, CHUN-GUEY;
CHEN, PI-YU;
CHANG, SU-SAN

Publication type:

Article

Influence of Nb addition on microstructure, electrical, dielectric properties, and aging behavior of MnCoDy modified Zn–V-based varistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 6, p. 540, doi. 10.1007/s10854-009-9954-8

By:

Choon-Woo Nahm

Publication type:

Article

High voltage SnO2 varistors prepared from nanocrystalline powders.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 2, p. 199, doi. 10.1007/s10854-009-9893-4

By:

Shahraki, Mohammad Maleki;
Shojaee, Seyyed Ali;
Nemati, Ali;
Sani, Mohammad Ali Faghihi

Publication type:

Article

Al doping effect on microstructure, electrical properties, dielectric characteristics, and aging behaviors of ZPCCY-based varistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 8, p. 718, doi. 10.1007/s10854-008-9793-z

By:

Nahm, Choon-W.

Publication type:

Article

Temperature-dependent current–voltage and capacitance–voltage characteristics of the Ag/ n-InP/In Schottky diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 2, p. 105, doi. 10.1007/s10854-008-9635-z

By:

Cimilli, F. E.;
Efeoğlu, H.;
Sağlam, M.;
Türüt, A.

Publication type:

Article

Fabrication of a ZnTe light emitting diode by Al thermal diffusion into a p-ZnTe epitaxial layer on a p-ZnMgTe substrate.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 505, doi. 10.1007/s10854-008-9691-4

By:

Tanaka, Tooru;
Saito, Katsuhiko;
Nishio, Mitsuhiro;
Qixin Guo;
Ogawa, Hiroshi

Publication type:

Article

The influence of area/volume ratio on microstructure and non-Ohmic properties of SnO2-based varistor ceramic blocks.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 1, p. 49, doi. 10.1007/s10854-008-9602-8

By:

Ramírez, M. A.;
Fernández, J. F.;
De la Rubia, M.;
de Frutos, J.;
Bueno, P. R.;
Longo, E.;
Varela, J. A.

Publication type:

Article

New method to control defect reaction induced by electron-hole recombination for long-living widegap light-emitting devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 299, doi. 10.1007/s10854-007-9555-3

By:

Adachi, Masahiro;
Hashimoto, Yutaka;
Kanzaki, Katsuhisa;
Ohashi, Shuji;
Morita, Yasuhiro;
Abe, Tomoki;
Kasada, Hirofumi;
Ando, Koshi;
Tajima, Michio

Publication type:

Article

Investigation of defects in polyhedral oligomeric silsesquioxanes based organic light emitting diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 87, doi. 10.1007/s10854-008-9629-x

By:

Renaud, Cédric;
Josse, Yves;
Chih-Wen Lee;
Nguyen, Thien-Phap

Publication type:

Article

Influence of doping on the reliability of AlGaInP LEDs.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 338, doi. 10.1007/s10854-008-9575-7

By:

Altieri-Weimar, Paola;
Jaeger, Arndt;
Lutz, Thomas;
Stauss, Peter;
Streubel, Klaus;
Thonke, Klaus;
Sauer, Rolf

Publication type:

Article

Defect investigation and temperature analysis of high-power AlGaInP laser diodes during catastrophic optical damage.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 155, doi. 10.1007/s10854-007-9478-z

By:

Bou Sanayeh, Marwan;
Brick, Peter;
Schmid, Wolfgang;
Mayer, Bernd;
Müller, Martin;
Reufer, Martin;
Streubel, Klaus;
Schwirzke-Schaaf, Sandy;
Tomm, Jens W.;
Danilewsky, Andreas;
Bacher, Gerd

Publication type:

Article

Synthesis and luminescent properties of Sr4Al14O25:Eu2+ blue–green emitting phosphor for white light-emitting diodes (LEDs).

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 339, doi. 10.1007/s10854-007-9325-2

By:

Zhanchao Wu;
Jianxin Shi;
Jing Wang;
Menglian Gong;
Qiang Su

Publication type:

Article

Ultraviolet photoelectron spectroscopy of quantum-well nano-cathode for organic light-emitting diodes.

Published in:

Journal of Materials Science Letters, 2003, v. 22, n. 20, p. 1415, doi. 10.1023/A:1025755229012

By:

Krasnov, A. N.;
Kim, W. Y.

Publication type:

Article

Silicon dioxide buffer at anode/polymer interface for enhanced brightness and efficiency of polymer light-emitting diode.

Published in:

Journal of Materials Science Letters, 2003, v. 22, n. 20, p. 1423, doi. 10.1023/A:1025759313991

By:

Huang, C. J.

Publication type:

Article

Fast high-performance liquid chromatographic analysis of naphthodianthrones and phloroglucinols from Hypericum perforatum extracts.

Published in:

Phytochemical Analysis, 2003, v. 14, n. 5, p. 306, doi. 10.1002/pca.720

By:

Ari Tolonen;
Anja Hohtola;
Jorma Jalonen

Publication type:

Article

High-Temperature BSE and EBAC Electronics for ESEM.

Published in:

2019

By:

Joachimi, Wolfgang;
Hemmleb, Matthias;
Grauel, Uwe;
Wang, Zhu-Jun;
Willinger, Marc;
Moldovan, Grigore

Publication type:

Abstract

A measuring System for the Spectroscopy of the Low-Frequency Noise of Semiconductor Diode Structures.

Published in:

Measurement Techniques, 2013, v. 56, n. 9, p. 1066, doi. 10.1007/s11018-013-0331-x

By:

Kostryukov, S.;
Ermachikhin, A.;
Litvinov, V.;
Kholomina, T.;
Rybin, N.

Publication type:

Article

The limitation of the dynamic range of a spectrum analyzer due to nonlinear processes in the mixer.

Published in:

Measurement Techniques, 2008, v. 51, n. 7, p. 786

By:

I. Sivokon’;
S. Sinel’nikov

Publication type:

Article

Research of Static and Dynamic Properties of Power Semiconductor Diodes at Low and Cryogenic Temperatures.

Published in:

Inventions (2411-5134), 2022, v. 7, n. 4, p. 96, doi. 10.3390/inventions7040096

By:

Ostapchuk, Mikhail;
Shishov, Dmitry;
Shevtsov, Daniil;
Zanegin, Sergey

Publication type:

Article

Anomalous Permittivity during Crystallization of BaTi 2 O 5 Glass.

Published in:

Ferroelectrics, 2006, v. 333, n. 1, p. 221, doi. 10.1080/00150190600701285

By:

Jinding Yu;
Arai, Yasutomo

Publication type:

Article

Real-time Thermographic Methodology with High-accuracy Temperature Monitoring Applied to Stacked Package of High-power Semiconductor Laser Diode.

Published in:

Sensors & Materials, 2019, v. 31, n. 7, Part 1, p. 2183, doi. 10.18494/SAM.2019.2055

By:

Shun-Lung Yen;
Shiang-Feng Tang;
Chung-Wei Ou;
Chin-Jung Chao;
Hsin-Yen Cheng;
Ing-Jiunn Su;
Tzu-Chiang Chen

Publication type:

Article

A 3D Optical Sensor Using Optical Axis Deviation Method for Rotational Errors.

Published in:

Sensors & Materials, 2016, v. 28, n. 9, p. 1053, doi. 10.18494/sam.2016.1394

By:

Hau-Wei Lee;
Te-Ping Chiu;
Chien-Hung Liu

Publication type:

Article

Clarifying the Differences Between the p/n-Type Definitions Based on Materials and Energy Levels.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 24, p. 4906, doi. 10.3390/electronics13244906

By:

Zohar, Moshe;
Bykhovsky, Dima;
Hava, Shlomo

Publication type:

Article

Stable Bending Performance of Flexible Organic Light-Emitting Diodes Using IZO Anodes.

Published in:

Scientific Reports, 2013, p. 1, doi. 10.1038/srep02787

By:

Kiyeol Kwak;
Kyoungah Cho;
Sangsig Kim

Publication type:

Article

The Wall Temperature Measurement and Effects on the Missile Complex Surfaсe Based on the Semiconductor Diode and Electronic System.

Published in:

Journal of Nano- & Electronic Physics, 2019, v. 11, n. 3, p. 1, doi. 10.21272/jnep.11(3).03004

By:

Pavliuchenko, A. M.;
Shyiko, O. M.;
Klochkova, T. I.

Publication type:

Article

p-i-n Photodiode Based on Silicon with Short Rise Time.

Published in:

Journal of Nano- & Electronic Physics, 2018, v. 10, n. 4, p. 1, doi. 10.21272/jnep.10(4).04019

By:

Dobrovolsky, Yu. G.;
Andreeva, O. P.;
Gavrilyak, M. S.;
Pidkamin, L. J.;
Prokhorov, G. V.

Publication type:

Article

Gunn Diodes Based on Graded InGaP-InPAs.

Published in:

Journal of Nano- & Electronic Physics, 2018, v. 10, n. 4, p. 1, doi. 10.21272/jnep.10(4).04014

By:

Storozhenko, I. P.;
Kaydash, M. V.

Publication type:

Article

A randomised double-blind study comparing the effect of 1072-nm light against placebo for the treatment of herpes labialis.

Published in:

Clinical & Experimental Dermatology, 2006, v. 31, n. 5, p. 638, doi. 10.1111/j.1365-2230.2006.02191.x

By:

Hargate, G.

Publication type:

Article

Properties of Shockley partials in InP: core width, Peierls barrier and stress.

Published in:

European Physical Journal B: Condensed Matter, 2012, v. 85, n. 3, p. 1, doi. 10.1140/epjb/e2012-20713-3

By:

Zhang, H.;
Yuan, C.

Publication type:

Article

Pseudocapacitive Charge Storage in Thick Composite MoS2 Nanocrystal-Based Electrodes.

Published in:

Advanced Energy Materials, 2017, v. 7, n. 2, p. n/a, doi. 10.1002/aenm.201601283

By:

Cook, John B.;
Kim, Hyung‐Seok;
Lin, Terri C.;
Lai, Chun‐Han;
Dunn, Bruce;
Tolbert, Sarah H.

Publication type:

Article

Performance evaluation of ZVS/ZCS high efficiency AC/DC converter for high power applications.

Published in:

Bulletin of the Polish Academy of Sciences: Technical Sciences, 2020, v. 68, n. 4, p. 793, doi. 10.24425/bpasts.2020.134185

By:

ALI, A.;
CHUANWEN, J.;
KHAN, M. M.;
HABIB, S.;
ALI, Y.

Publication type:

Article

PROGRESS IN HIGH EFFICIENCY UV LED RESEARCH FOR REAGENTLESS BIOAGENT DETECTION AND WATER PURIFICATION.

Published in:

International Journal of High Speed Electronics & Systems, 2008, v. 18, n. 1, p. 179, doi. 10.1142/S0129156408005254

By:

Reed, Meredith L.;
Garrett, Gregory A.;
Sampath, Anand V.;
Shen, Paul H.;
Collins, Charles J.;
Wraback, Michael;
Jianping Zhang;
Xuhong Hu;
Jianyu Deng;
Lunev, Alex;
Yuriy Bilenko;
Katona, Thomas;
Gaska, Remis

Publication type:

Article

SPATIAL SPECTRAL ANALYSIS IN HIGH BRIGHTNESS GaInN/GaN LIGHT EMITTING DIODES.

Published in:

International Journal of High Speed Electronics & Systems, 2007, v. 17, n. 1, p. 29, doi. 10.1142/S0129156407004199

By:

Detchprohm, T.;
Xia, Y.;
Senawiratne, J.;
Li, Y.;
Zhu, M.;
Zhao, W.;
Xi, Y.;
Schubert, E. F.;
Wetzel, C.

Publication type:

Article

LOW TEMPERATURE ELECTROLUMINESCENCE OF GREEN AND DEEP GREEN GaInN/GaN LIGHT EMITTING DIODES.

Published in:

International Journal of High Speed Electronics & Systems, 2007, v. 17, n. 1, p. 25, doi. 10.1142/S0129156407004187

By:

Li, Y.;
Zhao, W.;
Xia, Y.;
Zhu, M.;
Senawiratne, J.;
Detchprohm, T.;
Wetzel, C.

Publication type:

Article

SILICON CARBIDE SCHOTTKY BARRIER DIODE.

Published in:

International Journal of High Speed Electronics & Systems, 2005, v. 15, n. 4, p. 821, doi. 10.1142/S0129156405003430

By:

Zhao, Jian H.;
Kuang Sheng;
Lebron-Velilla, Ramon C.

Publication type:

Article

SILICON CARBIDE DIODES FOR MICROWAVE APPLICATIONS.

Published in:

International Journal of High Speed Electronics & Systems, 2005, v. 15, n. 4, p. 899, doi. 10.1142/S0129156405003454

By:

Vassilevski, Konstantin

Publication type:

Article

HIGH-VOLTAGE DIAMOND SCHOTTKY RECTIFIERS.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 248, doi. 10.1142/S0129156404002971

By:

Huang, W.;
Chow, T. P.;
Yang, J.;
Butler, J. E.

Publication type:

Article

DESIGN OF HIGH VOLTAGE 4H-SiC SUPERJUNCTION SCHOTTKY RECTIFIERS.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 241, doi. 10.1142/S012915640400296X

By:

Zhu, Lin;
Losee, Peter;
Chow, T. Paul

Publication type:

Article

NOISE CHARACTERISTICS OF 340 nm AND 280 nm GaN-BASED LIGHT EMITTING DIODES.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 78, doi. 10.1142/S0129156404002703

By:

Sawyer, Shayla;
Rumyantsev, Sergey L.;
Pala, Nezih;
Shur, Michael S.;
Bilenko, Yuriy;
Gaska, Remis;
Kosterin, Pavel V.;
Salzberg, Brian M.

Publication type:

Article

SPACE RADIATION EFFECTS IN OPTOCOUPLERS.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 2, p. 401, doi. 10.1142/S0129156404002430

By:

Reed, Robert A.;
Marshall, Paul W.;
Label, Kenneth A.

Publication type:

Article

POLAR-OPTICAL PHONON ENHANCEMENT OF HARMONIC GENERATION IN SCHOTTKY DIODES.

Published in:

International Journal of High Speed Electronics & Systems, 2002, v. 12, n. 2, p. 469, doi. 10.1142/S0129156402001393

By:

Gelmont, B.;
Woolard, D.;
Chen, S.

Publication type:

Article

White-light-emitting diodes using semiconductor nanocrystals.

Published in:

Microchimica Acta, 2007, v. 159, n. 3/4, p. 207, doi. 10.1007/s00604-007-0740-0

By:

Yanqin Li;
Rizzo, Aurora;
Cingolani, Roberto;
Gigli, Giuseppe

Publication type:

Article

Micro-Optoelectromechanical Tilt Sensor.

Published in:

Journal of Sensors, 2008, p. 1, doi. 10.1155/2008/782764

By:

Constandinou, Timothy G.;
Georgiou, Julius

Publication type:

Article

A method for improving the light intensity distribution in dental light-curing units.

Published in:

Dental Materials Journal, 2011, v. 30, n. 2, p. 151, doi. 10.4012/dmj.2010-114

By:

Arikawa, Hiroyuki;
Takahashp, Hideo;
Minesaki, Yoshito;
Muraguchi, Kouichi;
Matsuyama, Takashi;
Kanie, Takahito;
Ban, Seiji

Publication type:

Article

Cross-Sectional Electrostatic Force Microscopy of Semiconductor Laser Diodes.

Published in:

Semiconductors, 2001, v. 35, n. 7, p. 840, doi. 10.1134/1.1385722

By:

Ankudinov, A. V.;
Kotel’nikov, E. Yu.;
Kantsel’son, A. A.;
Evtikhiev, V. P.;
Titkov, A. N.

Publication type:

Article

Photodiodes for a 1.5–4.8μm Spectral Range Based on Type-II GaSb/InGaAsSb Heterostructures.

Published in:

Semiconductors, 2001, v. 35, n. 4, p. 453, doi. 10.1134/1.1365194

By:

Stoyanov, N. D.;
Mikhaılova, M. P.;
Andreıchuk, O. V.;
Moiseev, K. D.;
Andreev, I. A.;
Afrailov, M. A.;
Yakovlev, Yu. P.

Publication type:

Article

Negative Luminescence in p-InAsSbP/n-InAs Diodes.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 321, doi. 10.1134/1.1356155

By:

Aıdaraliev, M.;
Zotova, N. V.;
Karandashev, S. A.;
Matveev, B. A.;
Remennyı, M. A.;
Stus’, N. M.;
Talalakin, G. N.

Publication type:

Article

Capacitance–Voltage Characteristics of p–n Structures Based on (111)Si Doped with Erbium and Oxygen.

Published in:

Semiconductors, 2001, v. 35, n. 3, p. 316, doi. 10.1134/1.1356154

By:

Emel’yanov, A. M.;
Sobolev, N. A.;
Yakimenko, A. N.

Publication type:

Article