Works matching IS 0038111X AND DT 2000 AND VI 43 AND IP 3

Results: 20

Spin-etch planarization for dual damascene interconnect structures.

Published in:

Solid State Technology, 2000, v. 43, n. 3, p. 53

By:

DeBear, Donald S.;
Levert, Joseph A.;
Mukherjee, Shyama P.

Publication type:

Article

Practical in situ FTIR for CVD yields revised TEOS-O...model.

Published in:

Solid State Technology, 2000, v. 43, n. 3, p. 20

By:

Burggraaf, Pieter

Publication type:

Article

System-on-a-chip: What industry needs to do.

Published in:

Solid State Technology, 2000, v. 43, n. 3, p. 142

By:

Scholten, Cor A.

Publication type:

Article

CMOS: How far can it go?

Published in:

Solid State Technology, 2000, v. 43, n. 3, p. S14

By:

Deleonibus, Simon;
Caillat, Christian;
Gautier, Jacques;
Guegan, Georges;
Heitzmann, Michel;
Martin, Francois;
Tedesco, Serge

Publication type:

Article

EFTEM provides elemental mapping at nanometer resolution.

Published in:

Solid State Technology, 2000, v. 43, n. 3, p. S23

By:

Hofer, Ferdinand;
Leitner, Othmar;
Warbichler, Peter;
Grogger, Werner

Publication type:

Article

European market roundup: Continued growth predicted through 2001.

Published in:

Solid State Technology, 2000, v. 43, n. 3, p. S10

By:

Jeromski, Grace

Publication type:

Article

Tech Briefs.

Published in:: Solid State Technology, 2000, v. 43, n. 3, p. 18
Publication type:: Article

European boom led by telecom, automotive, smart cards.

Published in:

Solid State Technology, 2000, v. 43, n. 3, p. S3

By:

Rott, Barbara;
Demmin, Jeff

Publication type:

Article

Lithography's nemesis exposed.

Published in:

Solid State Technology, 2000, v. 43, n. 3, p. 18

By:

Burggraaf, Pieter

Publication type:

Article

Pentacene organic thin-film transistors and ICs.

Published in:

Solid State Technology, 2000, v. 43, n. 3, p. 63

By:

Klauk, Hagen;
Jackson, Thomas N.;
Gundlach, David J.;
Nichols, Jonathan A.;
Sheraw, Chris D.;
Bonse, Mathias

Publication type:

Article

The challenges in materials design for 157nm photoresists.

Published in:

Solid State Technology, 2000, v. 43, n. 3, p. 41

By:

Patterson, Kyle;
Somervell, Mark;
Willson, C. Grant

Publication type:

Article

Requirements for next-generation gas-flow components.

Published in:

Solid State Technology, 2000, v. 43, n. 3, p. 27

By:

Zarkar, Kaveh

Publication type:

Article

Asia Pacific.

Published in:: Solid State Technology, 2000, v. 43, n. 3, p. 14
Publication type:: Article

Low noise microchannels developed.

Published in:: Solid State Technology, 2000, v. 43, n. 3, p. 22
Publication type:: Article

Powerful simulation yields perovskite transistors.

Published in:

Solid State Technology, 2000, v. 43, n. 3, p. 22

By:

Burggraaf, Pieter

Publication type:

Article

Sub-0.1-...m filtration for 248nm resists.

Published in:

Solid State Technology, 2000, v. 43, n. 3, p. 20

By:

Burggraaf, Pieter

Publication type:

Article

Japan.

Published in:: Solid State Technology, 2000, v. 43, n. 3, p. 14
Publication type:: Article

USA.

Published in:: Solid State Technology, 2000, v. 43, n. 3, p. 12
Publication type:: Article

Worldwide highlights.

Published in:

Solid State Technology, 2000, v. 43, n. 3, p. 12

By:

Villeneuve, Meg

Publication type:

Article

Fab Trends: Are Europe and Asia leading the way?

Published in:

Solid State Technology, 2000, v. 43, n. 3, p. 8

By:

Haavind, Robert

Publication type:

Article