Works matching DE "OPTICAL properties of semiconductors"
Results: 174
2D Tellurium Based High‐Performance All‐Optical Nonlinear Photonic Devices.
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- Advanced Functional Materials, 2019, v. 29, n. 4, p. N.PAG, doi. 10.1002/adfm.201806346
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Molecular Self‐Doping Controls Luminescence of Pure Organic Single Crystals.
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- Advanced Functional Materials, 2018, v. 28, n. 21, p. 1, doi. 10.1002/adfm.201800116
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Peculiarities in electrical and optical properties of CuZnMnSnS films obtained by spray pyrolysis.
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- Technical Physics Letters, 2016, v. 42, n. 3, p. 291, doi. 10.1134/S1063785016030263
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Effect of natural aging on photoluminescence of porous silicon.
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- Technical Physics Letters, 2011, v. 37, n. 9, p. 789, doi. 10.1134/S1063785011090124
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A new method for the determination of optical band gap and the nature of optical transitions in semiconductors.
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- Applied Physics B: Lasers & Optics, 2015, v. 119, n. 2, p. 273, doi. 10.1007/s00340-015-6053-9
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Design and fabrication of highly dispersive semiconductor double-chirped mirrors.
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- Applied Physics B: Lasers & Optics, 2014, v. 116, n. 1, p. 141, doi. 10.1007/s00340-013-5662-4
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Electronic and Optical Properties of Semiconductor and Alkali Halides.
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- Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2013, v. 38, n. 7, p. 1889, doi. 10.1007/s13369-013-0551-z
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Influence of deposition temperature on structural, morphological, and optical properties of ZnS thin films.
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- Canadian Journal of Physics, 2018, v. 96, n. 7, p. 826, doi. 10.1139/cjp-2017-0730
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Drift of Electrons and Atoms in the Laser Radiation Field and Its Influence on the Optical Properties of Semiconductors.
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- Radiophysics & Quantum Electronics, 2005, v. 48, n. 8, p. 599, doi. 10.1007/s11141-005-0104-8
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Composition of self-assembled quantum dots.
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- Materials Science & Technology, 2003, v. 19, n. 4, p. 411, doi. 10.1179/026708303225001858
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Planar penta-transition metal phosphide and arsenide as narrow-gap semiconductors with ultrahigh carrier mobility.
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- Journal of Materials Science, 2019, v. 54, n. 9, p. 7035, doi. 10.1007/s10853-019-03380-4
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Graphene oxide-epoxy hybrid material as innovative photocatalyst.
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- Journal of Materials Science, 2013, v. 48, n. 15, p. 5204, doi. 10.1007/s10853-013-7308-7
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Theoretical studies on transforming a GaN semiconductor into a photonic crystal under a periodic external magnetic field.
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- Journal of Materials Science, 2013, v. 48, n. 3, p. 1147, doi. 10.1007/s10853-012-6852-x
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Perspectives on Heterogeneous Photochemistry.
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- Chemical Record, 2014, v. 14, n. 5, p. 944, doi. 10.1002/tcr.201402037
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Optical properties of CdS/MMA dispersions and CdS/PMMA nanocomposites prepared by one-step, size-controlled synthesis.
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- Russian Physics Journal, 2011, v. 53, n. 8, p. 849, doi. 10.1007/s11182-011-9499-1
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Explanations of the optical absorption and ESR spectrum for tetragonal Nicenters in CuAlS2:Nicrystals.
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- Crystal Research & Technology, 2010, v. 45, n. 6, p. 634, doi. 10.1002/crat.201000121
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Optical studies on ZnO films prepared by solgel method.
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- Crystal Research & Technology, 2009, v. 44, n. 8, p. 879
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Temperaturetuned band gap energy and oscillator parameters of Tl2InGaSe4semiconducting layered single crystals.
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- Crystal Research & Technology, 2009, v. 44, n. 3, p. 322, doi. 10.1002/crat.200800369
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- Article
Transient Changes of Optical Properties in Semiconductors in Response to Femtosecond Laser Pulses.
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- Applied Sciences (2076-3417), 2016, v. 6, n. 9, p. 238, doi. 10.3390/app6090238
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Design of a nano-layered tunable optical filter.
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- Journal of Modern Optics, 2006, v. 53, n. 12, p. 1739, doi. 10.1080/09500340600590547
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Cladding Glass Development for Semiconductor Core Optical Fibers.
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- International Journal of Applied Glass Science, 2012, v. 3, n. 2, p. 144, doi. 10.1111/j.2041-1294.2012.00085.x
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Precision interferometric surface metrology of transparent thin film using wavelength tuning.
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- Journal of Mechanical Science & Technology, 2017, v. 31, n. 11, p. 5423, doi. 10.1007/s12206-017-1037-9
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First-Principles Study of Pressure Dependence of Optical Spectra of MnS.
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- Journal of Superconductivity & Novel Magnetism, 2018, v. 31, n. 5, p. 1643, doi. 10.1007/s10948-017-4377-x
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Optical cavity cooling of mechanical modes of a semiconductor nanomembrane.
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- Nature Physics, 2012, v. 8, n. 2, p. 168, doi. 10.1038/nphys2196
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Effects of polyvinylpyrrolidone on structural and optical properties of willemite semiconductor nanoparticles by polymer thermal treatment method.
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- Journal of Thermal Analysis & Calorimetry, 2019, v. 136, n. 6, p. 2249, doi. 10.1007/s10973-018-7874-7
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Semiconductor optical amplifier cascaded optical single-sideband modulation with phase pre-distortion.
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- Microwave & Optical Technology Letters, 2004, v. 40, n. 5, p. 436, doi. 10.1002/mop.11403
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A multiwavelength semiconductor laser.
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- Nature, 1998, v. 396, n. 6709, p. 350, doi. 10.1038/24585
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Light-emitting diodes made from cadmium selenide nanocrystals and a semiconducting polymer.
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- Nature, 1994, v. 370, n. 6488, p. 354, doi. 10.1038/370354a0
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The Effect of Annealing on Some Optical Properties in Se-Te-Ag Glasses.
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- Integrated Ferroelectrics, 2010, v. 118, n. 1, p. 34, doi. 10.1080/10584587.2010.489469
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Yuriĭ Andreevich Osip’yan (on the occasion of his 75th birthday).
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- Crystallography Reports, 2006, v. 51, n. 3, p. 525, doi. 10.1134/S1063774506030254
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- Article
Electrical Characterization of GaN.
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- PIERS Proceedings, 2014, p. 1975
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Determination of external quantum efficiency in semiconductors using pulsed power-dependent photoluminescence.
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- Optical Engineering, 2017, v. 56, n. 1, p. 1, doi. 10.1117/1.OE.56.1.011106
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Experimental investigation on the quality improvement of low-power gain-switching diode laser picosecond pulses using a compact highly nonlinear optical loop mirror.
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- Optical Engineering, 2010, v. 49, n. 5, p. 055004, doi. 10.1117/1.3430575
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Wideband continuously tunable optical delay line based on wavelength conversion in reflective semiconductor optical amplifiers and fiber dispersion.
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- Optical Engineering, 2009, v. 48, n. 10, p. 105004, doi. 10.1117/1.3242827
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Finite element method as applied to the study of gratings embedded in complementary metal-oxide semiconductor image sensors.
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- Optical Engineering, 2009, v. 48, n. 5, p. 058002
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Novel all-optical quaternary amplitude shift keying modulation technique based on cross-gain modulation in a semiconductor optical amplifier.
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- Optical Engineering, 2009, v. 48, n. 5, p. 055007
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Transport and optical properties of the layer semiconductor p-type GaSe doped with Li.
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- Philosophical Magazine Letters, 1999, v. 79, n. 8, p. 575, doi. 10.1080/095008399176959
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Colloidal-chemistry based synthesis of quantized CuInS<sub>2</sub>/Se<sub>2</sub> nanoparticles.
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- Journal of the Serbian Chemical Society, 2012, v. 77, n. 1, p. 1, doi. 10.2298/JSC110420220A
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Optical, Electrical, and Morphological Effects of Yttrium Doping of Cadmium Oxide Thin Films Grown by Ultrasonic Spray Pyrolysis.
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- Journal of Electronic Materials, 2017, v. 46, n. 4, p. 2090, doi. 10.1007/s11664-016-5134-9
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Fabrication and Characterization of Reactively Sputtered AlInGaN Films with a Cermet Target Containing 5% Al and 7.5% In.
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- Journal of Electronic Materials, 2017, v. 46, n. 4, p. 1948, doi. 10.1007/s11664-016-5157-2
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Shallow-Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar ( $$ 11\bar{2}2 $$) Facet GaN.
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- Journal of Electronic Materials, 2011, v. 40, n. 7, p. 1572, doi. 10.1007/s11664-011-1652-7
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Optical Study of Filled Tetrahedral Compounds Li<sub>3</sub>AlN<sub>2</sub> and Li<sub>3</sub>GaN<sub>2</sub>.
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- Journal of Electronic Materials, 2010, v. 39, n. 8, p. 1186, doi. 10.1007/s11664-010-1268-3
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Stimulated Emission and Optical Properties of Solid Solutions of Cu(In,Ga)Se<sub>2</sub> Direct Band Gap Semiconductors.
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- Journal of Applied Spectroscopy, 2018, v. 85, n. 2, p. 267, doi. 10.1007/s10812-018-0643-3
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Photoluminescence and Raman scattering in spatially inhomogeneous heteroepitaxial InGaN layers.
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- Journal of Applied Spectroscopy, 2011, v. 78, n. 4, p. 518, doi. 10.1007/s10812-011-9493-y
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Thermophysical and optical properties of silicon carbide-based microsystems with a dimple relief.
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- Technical Physics, 2012, v. 57, n. 8, p. 1167, doi. 10.1134/S1063784212080130
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LINEAR AND NONLINEAR INTERSUBBAND OPTICAL ABSORPTION OF FINITE AND INFINITE SEMI-PARABOLIC QUANTUM WELLS.
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- Modern Physics Letters B, 2011, v. 25, n. 7, p. 497, doi. 10.1142/S0217984911025882
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EFFECT OF DEVIATION ON OPTICAL TRANSMISSION THROUGH THUE–MORSE MULTILAYERS.
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- Modern Physics Letters B, 2008, v. 22, n. 20, p. 1913, doi. 10.1142/S0217984908016583
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AB INITIO APPROACH TO STRUCTURAL, ELECTRONIC AND OPTICAL PROPERTIES OF B-, C- AND N-DOPED ANATASE.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2010, v. 24, n. 31, p. 6049, doi. 10.1142/S0217979210057572
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GaIn NAs/GaAs bidirectional light-emitting and light-absorbing heterojunction operating at 1.3 μm.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-37
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Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1897, doi. 10.1007/s11671-010-9752-5
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