Works matching DE "GALLIUM arsenide semiconductors"

Results: 327

STUDY BY RAMAN SPECTROSCOPY OF THE INDUCED RADIATION DAMAGE IN GaAr:Cr EXPOSED TO 20 MeV ELECTRON BEAM.

Published in:

Revista Cubana de Física, 2021, v. 38, n. 1, p. 4

By:

LEYVA-FABELO, A.;
LEYVA-PERNÍA, D.;
RUBIERA-GIMENO, J. A.;
CRUZ-INCLÁN, C. M.;
VALDÉS-ALBUERNES, JORGE L.;
KOBETS, V.;
ABOU-EL-AZM, S.;
KRUCHONAK, U.;
ZHEMCHUGOV, A.;
SHELKOV, G.;
PÁEZ-RODRÍGUEZ, A.;
MAYETA-AGUILERA, M.

Publication type:

Article

Cluster tool sputtering for compound semiconductors.

Published in:

Solid State Technology, 2001, v. 44, n. 7, p. 145

By:

Bavin, Andy

Publication type:

Article

US Air Force Lab develops defect analysis for GaAs.

Published in:

Solid State Technology, 2001, v. 44, n. 1, p. 28

By:

Demmin, Jeffrey C.

Publication type:

Article

IBM goes mainstream with SiGe manufacturing.

Published in:

Solid State Technology, 1999, v. 42, n. 2, p. 18

By:

P.B.

Publication type:

Article

The Study of DC- and AC-Driven GaAs-Coupled Gas Discharge Micro Plasma Systems: Modeling and Simulation.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3792, doi. 10.1007/s11664-024-11098-6

By:

Yücel, Hatice Hilal;
Utaş, Selçuk;
Ongun, Erhan

Publication type:

Article

EFFICIENT CHARACTERIZATION OF MULTILEVEL INTERCONNECTIONS ON THE GaAs-BASED VLSICs.

Published in:

Microwave & Optical Technology Letters, 1988, v. 1, n. 7, p. 252, doi. 10.1002/mop.4650010709

By:

Goel, A. K.;
Huang, Y. R.

Publication type:

Article

Etching behavior of GaAs, GaSb, InAs, and InSb in aqueous HO-HBr-ethylene glycol solutions.

Published in:

Inorganic Materials, 2012, v. 48, n. 9, p. 867, doi. 10.1134/S002016851208016X

By:

Tomashik, Z.;
Shelyuk, I.;
Tomashik, V.;
Okrepka, G.;
Moravec, P.;
Stratiichuk, I.

Publication type:

Article

Transition from a disordered to a crystalline state in II-VI and III-V films.

Published in:

Inorganic Materials, 2012, v. 48, n. 1, p. 16, doi. 10.1134/S0020168511120107

By:

Kurilo, I.;
Guba, S.;
Rudyi, I.;
Virt, I.

Publication type:

Article

Influence of Structural Defects on the Mechanical Stress in the Impurity Diffusion Zone of GaAs Single Crystals.

Published in:

Inorganic Materials, 2005, v. 41, n. 8, p. 789, doi. 10.1007/s10789-005-0211-0

By:

Litvinova, M.;
Shtan’ko, A.

Publication type:

Article

Zinc Doping Profile in AlGaAs/GaAs Heteroepitaxial Structures Grown by Metalorganic Chemical Vapor Deposition.

Published in:

Inorganic Materials, 2004, v. 40, n. 8, p. 787, doi. 10.1023/B:INMA.0000037920.53242.0a

By:

Akchurin, R. Kh.;
Andreev, A. Yu.;
Bulaev, P. V.;
Zalevskii, I. D.;
Marmalyuk, A. A.;
Nikitin, D. B.;
Padalitsa, A. A.

Publication type:

Article

Performance Enhancement of Planar GaAs Photoconductive Semiconductor Switches by Introducing p-Type Epitaxial Layer.

Published in:

Photonics, 2025, v. 12, n. 2, p. 152, doi. 10.3390/photonics12020152

By:

Zong, Jiawei;
Shi, Yating;
Qian, Guang;
Wang, Jinpeng;
Wei, Zelu;
Kong, Yuechan;
Zhang, Jingwen;
Chen, Tangsheng

Publication type:

Article

Flat-Top and Stacking-Fault-Free GaAs-Related Nanopillars Grown on Si Substrates.

Published in:

Journal of Nanotechnology, 2012, p. 1, doi. 10.1155/2012/890607

By:

Kouta Tateno;
Guoqiang Zhang;
Hideki Gotoh;
Tetsuomi Sogawa

Publication type:

Article

Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy.

Published in:

Journal of Nanotechnology, 2012, p. 1, doi. 10.1155/2012/169284

By:

Hiruma, K.;
Tomioka, K.;
Mohan, P.;
Yang, L.;
Noborisaka, J.;
Hua, B.;
Hayashida, A.;
Fujisawa, S.;
Hara, S.;
Motohisa, J.;
Fukui, T.

Publication type:

Article

AlGaAs/GaAs heterojunction phototransistor with Zn delta-doped base region.

Published in:

Optica Applicata, 2005, v. 35, n. 3, p. 645

By:

ŚCIANA, BEATA;
RADZIEWICZ, DAMIAN;
PUCICKI, DAMIAN;
TŁACZAŁA, MAREK;
KOVÁČ, JAROSLAV;
SRNANEK, RUDOLF

Publication type:

Article

Optimization of multi quantum well solar cell.

Published in:

Optica Applicata, 2005, v. 35, n. 3, p. 619

By:

PRAŻMOWSKA, JOANNA;
KORBUTOWICZ, RYSZARD

Publication type:

Article

Thermoreflectance study of temperature distribution on the semiconductor laser mirrors.

Published in:

Optica Applicata, 2005, v. 35, n. 3, p. 611

By:

PIWOŃSKI, TOMASZ;
WAWER, DOROTA;
SZYMAŃSKI, MICHAŁ;
OCHALSKI, TOMASZ;
BUGAJSKI, MACIEJ

Publication type:

Article

Simplified modelling of photonic-crystal-confined vertical-cavity surface-emitting diode lasers.

Published in:

Optica Applicata, 2005, v. 35, n. 3, p. 579

By:

NAKWASKI, WłODZIMIERZ

Publication type:

Article

Properties and origin of oval defects in epitaxial structures grown by molecular beam epitaxy.

Published in:

Optica Applicata, 2005, v. 35, n. 3, p. 537

By:

SZERLING, ANNA;
KOSIEL, KAMIL;
WÓJCIK-JEDLIŃSKA, ANNA;
PŁUSKA, MARIUSZ;
BUGAJSKI, MACIEJ

Publication type:

Article

Optical properties of InGaAs/GaAs quantum wells with different distance from Si-delta-doping layer.

Published in:

Optica Applicata, 2005, v. 35, n. 3, p. 471

By:

KOZIČ, ANTONI;
SUŽIEDELIS, ALGIRDAS;
PETKUN, VALERIJ;
ČERŠKUS, AURIMAS;
SHTRIKMANN, HADAS;
GRADAUSKAS, JONAS;
KUNDROTAS, JURGIS;
AŠMONTAS, STEPONAS

Publication type:

Article

Properties of constricted 2DEG/metal structures in microwave electric fields.

Published in:

Optica Applicata, 2005, v. 35, n. 3, p. 465

By:

KOWALCZYK, ANNA E.;
ORNOCH, LESZEK;
MUSZALSKI, JAN;
KANIEWSKI, JANUSZ;
BAK-MISIUK, JADWIGA

Publication type:

Article

Deep centers in InGaAs/InP layers grown by molecular beam epitaxy.

Published in:

Optica Applicata, 2005, v. 35, n. 3, p. 457

By:

KISIEL, MARCIN;
SKROBAS, KAZIMIERZ;
ZDYB, RYSZARD;
JAŁOCHOWSKI, MIECZYSŁAW

Publication type:

Article

Some problems of molecular beam epitaxy growth of epitaxial structures of semiconductor lasers for a 980 nm band.

Published in:

Optica Applicata, 2005, v. 35, n. 3, p. 399

By:

KOSMALA, MICHAŁ&;
REGIŃSKI, KAZIMIERZ;
KOSIEL, KAMIL

Publication type:

Article

High resolution photoemission yield study of the GaAs(100) surface cleaned by atomic hydrogen.

Published in:

Optica Applicata, 2005, v. 35, n. 3, p. 385

By:

TOMKIEWICZ, PAWEŁ;
KOŚCIELNIAK, PIOTR;
GIRYCKI, ADAM;
SZUBER, JACEK

Publication type:

Article

Influence of surface states and bulk traps on non-equilibrium phenomena at GaAs and GaN surfaces.

Published in:

Optica Applicata, 2005, v. 35, n. 3, p. 355

By:

MICZEK, MARCIN;
ADAMOWICZ, BOGUSLAWA;
HASHIZUME, TAMOTSU;
HASEGAWA, HIDEKI

Publication type:

Article

Pressure-dependent mechanical properties, optical phonon frequencies, and acoustic velocity of the gallium arsenide semiconductor.

Published in:

Optical & Quantum Electronics, 2023, v. 55, n. 7, p. 1, doi. 10.1007/s11082-023-04931-5

By:

Al Maaitah, Ibtisam F.

Publication type:

Article

Small signal modeling of GaAs PIN diodes aided by electromagnetic analysis.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2001, v. 11, n. 2, p. 61, doi. 10.1002/mmce.1001

By:

Shuts, Bill;
Dunleavy, Lawrence;
Fejzuli, Alen;
Allen, Don

Publication type:

Article

Bias-dependent small-signal modeling of GaAs PIN diodes.

Published in:

International Journal of RF & Microwave Computer-Aided Engineering, 2001, v. 11, n. 2, p. 99, doi. 10.1002/mmce.1005

By:

Fejzuli, Alen;
Dunleavy, Lawrence;
Snider, Arthur;
Allen, Don

Publication type:

Article

Effect of Dot Size on Exciton Energy States Confined in a Spherical Gallium Arsenide Quantum Dot.

Published in:

Nanosistemi, Nanomateriali, Nanotehnologii, 2018, v. 16, n. 1, p. 175

By:

Din Bhat, Bashir Mohi Ud;
Shah, Khurshed A.

Publication type:

Article

Pulse Width Control Based on Blumlein Pulse Forming Line and SI-GaAs PCSS.

Published in:

Photonics, 2023, v. 10, n. 2, p. 156, doi. 10.3390/photonics10020156

By:

Wu, Meilin;
Shi, Wei;
Ma, Cheng;
Chen, Zhiyuan;
Liu, Hui

Publication type:

Article

Formation of nanostructures in a heterojunction with a deeply located 2D electron gas via the method of high-voltage anodic-oxidation lithography using an atomic-force microscope.

Published in:

Instruments & Experimental Techniques, 2008, v. 51, n. 4, p. 617, doi. 10.1134/S0020441208040209

By:

Mel’nikov, M.;
Khrapai, V.;
Schuh, D.

Publication type:

Article

Intervalley scattering in GaAs: ab initio calculation of the effective parameters for Monte Carlo simulations.

Published in:

Applied Physics A: Materials Science & Processing, 2007, v. 86, n. 3, p. 301, doi. 10.1007/s00339-006-3786-7

By:

Sjakste, J.;
Tyuterev, V.;
Vast, N.

Publication type:

Article

Ab initio characterization of arsenic vacancy diffusion pathways in GaAs with SIEST-A-RT.

Published in:

Applied Physics A: Materials Science & Processing, 2007, v. 86, n. 3, p. 309, doi. 10.1007/s00339-006-3761-3

By:

El-Mellouhi, F.;
Mousseau, N.

Publication type:

Article

Immobilization of avidin on (001) GaAs surface.

Published in:

Applied Physics A: Materials Science & Processing, 2006, v. 83, n. 3, p. 357, doi. 10.1007/s00339-006-3569-1

By:

Ding, X.;
Moumanis, Kh.;
Dubowski, J. J.;
Frost, E. H.;
Escher, E.

Publication type:

Article

Structural modifications of silicon-implanted GaAs induced by the athermal annealing technique.

Published in:

Applied Physics A: Materials Science & Processing, 2004, v. 79, n. 8, p. 1971, doi. 10.1007/s00339-003-2174-9

By:

Qadri, S.B.;
Yousuf, M.;
Kendziora, C.A.;
Nachumi, B.;
Fischer, R.;
Grun, J.;
Rao, M.V.;
Tucker, J.;
Siddiqui, S.;
Ridgway, M.C.

Publication type:

Article

Characterization of GaAs/Al[sub x] Ga[sub 1-x] As heterointerface defects by means of capacitive measurememts.

Published in:

Applied Physics A: Materials Science & Processing, 1997, v. 65, n. 1, p. 39, doi. 10.1007/s003390050538

By:

Valcheva, E.P.

Publication type:

Article

Photoacoustic measurements of the thermal properties of Al[sub y] Ga[sub 1-y] As alloys in the region 0<y<0.5.

Published in:

Applied Physics A: Materials Science & Processing, 1997, v. 65, n. 1, p. 69, doi. 10.1007/s003390050544

By:

Pichardo, J.L.;
Marín, E.;
Alvarado-Gil, J.J.;
Mendoza-Alvarez, J.G.;
Cruz-Orea, A.;
Delgadillo, I.;
Torres-Delgado, G.;
Vargas, H.

Publication type:

Article

Wafer bonding of gallium arsenide on sapphire.

Published in:

Applied Physics A: Materials Science & Processing, 1997, v. 64, n. 6, p. 533, doi. 10.1007/s003390050512

By:

Kopperschmidt, P.;
Kästner, G.;
Senz, S.;
Hesse, D.;
Gösele, U.

Publication type:

Article

Two groups of misfit dislocations in GaAs on Si.

Published in:

Applied Physics A: Materials Science & Processing, 1996, v. 63, n. 4, p. 359, doi. 10.1007/BF01567327

By:

Tamura, M.

Publication type:

Article

Optimization of carbon incorporation in GaAs during molecular beam epitaxial growth.

Published in:

Applied Physics A: Materials Science & Processing, 1996, v. 62, n. 5, p. 459

By:

Nörenberg, H.;
Mazuelas, A.;
Hagenstein, K.;
Hey, R.;
Grahn, H. T.

Publication type:

Article

Design and Realization of GaAs Digital Circuit forMixed Signal MMIC Implementation in AESA Applications.

Published in:

International Journal of Microwave Science & Technology, 2011, v. 2011, p. 1, doi. 10.1155/2011/387137

By:

Bentini, Andrea;
Pasciuto, Benedetto;
Ciccognani, Walter;
Limiti, Ernesto;
Nanni, Antonio;
Romanini, Paolo

Publication type:

Article

Modification of Photovoltaic Laser-Power (λ = 808 nm) Converters Grown by LPE.

Published in:

Semiconductors, 2018, v. 52, n. 3, p. 366, doi. 10.1134/S1063782618030120

By:

Khvostikov, V. P.;
Sorokina, S. V.;
Potapovich, N. S.;
Khvostikova, O. A.;
Timoshina, N. Kh.;
Shvarts, M. Z.

Publication type:

Article

Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime.

Published in:

Semiconductors, 2016, v. 50, n. 4, p. 466, doi. 10.1134/S1063782616040060

By:

Bagraev, N.;
Chaikina, E.;
Danilovskii, E.;
Gets, D.;
Klyachkin, L.;
L'vova, T.;
Malyarenko, A.

Publication type:

Article

Effect of thermal annealing on the emission properties of heterostructures containing a quantum-confined GaAsSb layer.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 9, doi. 10.1134/S1063782615010054

By:

Dikareva, N.;
Vikhrova, O.;
Zvonkov, B.;
Malekhonova, N.;
Nekorkin, S.;
Pirogov, A.;
Pavlov, D.

Publication type:

Article

Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 109, doi. 10.1134/S1063782615010285

By:

Zvonkov, B.;
Vikhrova, O.;
Dorokhin, M.;
Kalentyeva, I.;
Morozov, S.;
Kryzhkov, D.;
Yunin, P.

Publication type:

Article

Mass transfer in GaAs surface layers under the action of low-intensity electromagnetic waves.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 184, doi. 10.1134/S1063782614020067

By:

Bryantseva, T.;
Lybchenko, D.;
Lybchenko, V.;
Markov, I.;
Markov, R.

Publication type:

Article

Radiative and nonradiative recombination in the active layers of high-power InGaAs/GaAs/AlGaAs laser diodes.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1316, doi. 10.1134/S1063782612100077

By:

Kabanov, V.;
Lebiadok, Ye.;
Ryabtsev, G.;
Smal, A.;
Shchemelev, M.;
Vinokurov, D.;
Slipchenko, S.;
Sokolova, Z.;
Tarasov, I.

Publication type:

Article

Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1291, doi. 10.1134/S1063782612100089

By:

Lukin, P.;
Chaldyshev, V.;
Preobrazhenskii, V.;
Putyato, M.;
Semyagin, B.

Publication type:

Article

Small-signal field effect in GaAs/InAs quantum-dot heterostructures.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1274, doi. 10.1134/S1063782612100144

By:

Tikhov, S.

Publication type:

Article

850-nm diode lasers based on AlGaAsP/GaAs heterostructures.

Published in:

Semiconductors, 2012, v. 46, n. 10, p. 1321, doi. 10.1134/S106378261210020X

By:

Vinokurov, D.;
Kapitonov, V.;
Lyutetskiy, A.;
Nikolaev, D.;
Pikhtin, N.;
Slipchenko, S.;
Stankevich, A.;
Shamakhov, V.;
Vavilova, L.;
Tarasov, I.

Publication type:

Article

Effect of microwave irradiation on the resistance of Au-TiB-Ge-Au- n- n- n-GaAs(InP) ohmic contacts.

Published in:

Semiconductors, 2012, v. 46, n. 4, p. 541, doi. 10.1134/S1063782612040021

By:

Belyaev, A.;
Sachenko, A.;
Boltovets, N.;
Ivanov, V.;
Konakova, R.;
Kudryk, Ya.;
Matveeva, L.;
Milenin, V.;
Novitskii, S.;
Sheremet, V.

Publication type:

Article