Works matching DE "DEEP level transient spectroscopy"

Results: 151

Study of γ-ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C–V and DLTS.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 12, p. 11079, doi. 10.1007/s10854-019-01450-6

By:

Ke, Xiao-yu;
Ming, Si-ting;
Wang, Duo-wei;
Li, Tong;
Liu, Bing-yan;
Cao, Shu-rui;
Ma, Yao;
Li, Yun;
Yang, Zhi-mei;
Gong, Min;
Huang, Ming-min;
Bi, Jin-shun;
Xu, Yan-nan;
Xi, Kai;
Xu, Gao-bo;
Majumdar, Sandip

Publication type:

Article

Study of gamma-ray radiation effects on the passivation properties of atomic layer deposited Al2O3 on silicon using deep-level transient spectroscopy.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 2, p. 1148, doi. 10.1007/s10854-018-0383-4

By:

Chen, Zhe;
Dong, Peng;
Xie, Meng;
Li, Yun;
Yu, Xuegong;
Ma, Yao

Publication type:

Article

Effects of cobalt doping on the electrical properties of MBE-grown ZnO.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 9, p. 1400, doi. 10.1007/s10854-011-0320-2

By:

Seghier, D.;
Gislason, H. P.

Publication type:

Article

Characterization of a metastable defect labeled EM3 in hydrogen-implanted n-type silicon using deep-level transient spectroscopy.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 281, doi. 10.1007/s10854-007-9553-5

By:

Tokuda, Yutaka;
Takeshi Seo

Publication type:

Article

Effect of electrical operation on the defect states in organic semiconductors.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 92, doi. 10.1007/s10854-008-9693-2

By:

Nguyen, Thien;
Renaud, Cédric;
Chun Huang;
Chih-Nan Lo;
Chih-Wen Lee;
Chain-Shu Hsu

Publication type:

Article

Thermal instability of electron traps in InAs/GaAs quantum dot structures.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 101, doi. 10.1007/s10854-008-9703-4

By:

Kaniewska, M.;
Engström, O.;
Kaczmarczyk, M.;
Zaremba, G.

Publication type:

Article

Investigation of defects in polyhedral oligomeric silsesquioxanes based organic light emitting diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 87, doi. 10.1007/s10854-008-9629-x

By:

Renaud, Cédric;
Josse, Yves;
Chih-Wen Lee;
Nguyen, Thien-Phap

Publication type:

Article

Electronic characterization of several 100 μm thick epitaxial GaAs layers.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 5, p. 487, doi. 10.1007/s10854-007-9367-5

By:

Talbi, N.;
Khirouni, K.;
Sun, G. C.;
Samic, H.;
Bourgoin, J. C.

Publication type:

Article

Effect of temperature on thermally induced defects in silicon.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 3, p. 267, doi. 10.1007/s10854-007-9272-y

By:

Ali, Akbar;
Majid, Abdul;
Saleh, M. Nawaz

Publication type:

Article

Radiation damages of GaAlAs LEDs by 70-MeV proton and 2-MeV electron irradiation.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 171, doi. 10.1007/s10854-007-9302-9

By:

Ohyama, H.;
Shitogiden, H.;
Takakura, K.;
Shigaki, K.;
Kuboyama, S.;
Kamesawa, C.;
Simoen, E.;
Claeys, C.

Publication type:

Article

A DLTS study on plasma-hydrogenated n-type high-resistivity magnetic Cz silicon.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 705, doi. 10.1007/s10854-006-9092-5

By:

Huang, Y.;
Simoen, E.;
Claeys, C.;
Rafí, J.;
Clauws, P.

Publication type:

Article

Lifetime and leakage current considerations in metal-doped germanium.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 799, doi. 10.1007/s10854-006-9110-7

By:

Simoen, E.;
Claeys, C.;
Sioncke, S.;
Steenbergen, J.;
Meuris, M.;
Forment, S.;
Vanhellemont, J.;
Clauws, P.;
Theuwis, A.

Publication type:

Article

Iron-aluminium pair reconfiguration processes in SiGe alloys.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 7, p. 759, doi. 10.1007/s10854-006-9104-5

By:

Kruszewski, P.;
Mesli, A.;
Dobaczewski, L.;
Abrosimov, N.;
Markevich, V.;
Peaker, A.

Publication type:

Article

Iron and gold related defects in water quenched silicon.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 4, p. 421, doi. 10.1007/s10854-006-9043-1

By:

Akbar Ali;
Abdul Majid;
M. Saleh

Publication type:

Article

Interaction of copper atoms with radiation-induced defects in silicon.

Published in:

Inorganic Materials, 2010, v. 46, n. 4, p. 333, doi. 10.1134/S0020168510040011

By:

Murin, L.;
Medvedeva, I.;
Markevich, V.

Publication type:

Article

Radial distribution of iron in silicon crystals grown by Czochralski method from contaminated feedstock.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 3, p. 228, doi. 10.1002/pssr.201308327

By:

Mchedlidze, Teimuraz;
Weber, Jörg

Publication type:

Article

Analysis of Deep Level Trap Effects in Transistor Lasers.

Published in:

Lasers in Engineering (Old City Publishing), 2013, v. 25, n. 5/6, p. 313

By:

HORRI, A.;
MIRMOEINI, S.;
FAEZ, R.

Publication type:

Article

Modification of energy bandgap in lattice mismatched InGaAs/GaAs heterostructures.

Published in:

Optica Applicata, 2009, v. 39, n. 4, p. 845

By:

GELCZUK, ŁUKASZ;
DĄBROWSKA-SZATA, MARIA

Publication type:

Article

Deep centers in InGaAs/InP layers grown by molecular beam epitaxy.

Published in:

Optica Applicata, 2005, v. 35, n. 3, p. 457

By:

KISIEL, MARCIN;
SKROBAS, KAZIMIERZ;
ZDYB, RYSZARD;
JAŁOCHOWSKI, MIECZYSŁAW

Publication type:

Article

Distinguishing and identifying point and extended defects in DLTS measurements.

Published in:

Materials Science (0137-1339), 2005, v. 23, n. 3, p. 625

By:

Gelczuk, Ł.;
ąbrowska-Szata, M.;
Jóźwiak, G.

Publication type:

Article

Zonal disintegration of rock mass around an underground excavation.

Published in:

Journal of Mining Science, 2014, v. 50, n. 1, p. 33, doi. 10.1134/S1062739114010050

By:

Mirenkov, V.

Publication type:

Article

An Automated Measuring System for Current Deep-Level Transient Spectroscopy.

Published in:

Instruments & Experimental Techniques, 2018, v. 61, n. 2, p. 277, doi. 10.1134/S0020441218020021

By:

Ermachikhin, A. V.;
Litvinov, V. G.

Publication type:

Article

Interaction between oxygen and dislocations in p-type silicon.

Published in:

Applied Physics A: Materials Science & Processing, 2008, v. 90, n. 4, p. 619, doi. 10.1007/s00339-007-4377-y

By:

Cavalcoli, D.;
Castaldini, A.;
Cavallini, A.

Publication type:

Article

Donor-like defects in ZnO substrate materials and ZnO thin films.

Published in:

Applied Physics A: Materials Science & Processing, 2007, v. 88, n. 1, p. 135, doi. 10.1007/s00339-007-3966-0

By:

von Wenckstern, H.;
Brandt, M.;
Schmidt, H.;
Biehne, G.;
Pickenhain, R.;
Hochmuth, H.;
Lorenz, M.;
Grundmann, M.

Publication type:

Article

Properties of the oxygen vacancy in ZnO.

Published in:

Applied Physics A: Materials Science & Processing, 2007, v. 88, n. 1, p. 147, doi. 10.1007/s00339-007-3956-2

By:

Hofmann, D.M.;
Pfisterer, D.;
Sann, J.;
Meyer, B.K.;
Tena-Zaera, R.;
Munoz-Sanjose, V.;
Frank, T.;
Pensl, G.

Publication type:

Article

Electrical and optical spectroscopy on ZnO:Co thin films.

Published in:

Applied Physics A: Materials Science & Processing, 2007, v. 88, n. 1, p. 157, doi. 10.1007/s00339-007-3992-y

By:

Schmidt, H.;
Diaconu, M.;
Hochmuth, H.;
Benndorf, G.;
von Wenckstern, H.;
Biehne, G.;
Lorenz, M.;
Grundmann, M.

Publication type:

Article

Energetically deep defect centers in vapor-phase grown zinc oxide.

Published in:

Applied Physics A: Materials Science & Processing, 2007, v. 88, n. 1, p. 141, doi. 10.1007/s00339-007-3963-3

By:

Frank, T.;
Pensl, G.;
Tena-Zaera, R.;
Zúñiga-Pérez, J.;
Martínez-Tomás, C.;
Muñoz-Sanjosé, V.;
Ohshima, T.;
Itoh, H.;
Hofmann, D.;
Pfisterer, D.;
Sann, J.;
Meyer, B.

Publication type:

Article

Effects of implantation defects on the carrier concentration of 6H-SiC.

Published in:

Applied Physics A: Materials Science & Processing, 2006, v. 82, n. 3, p. 543, doi. 10.1007/s00339-005-3379-x

By:

Ruggiero, A.;
Libertino, S.;
Roccaforte, F.;
La Via, F.;
Calcagno, L.

Publication type:

Article

On-line DLTS investigations of vacancy related defects in low-temperature electron irradiated, boron-doped Si.

Published in:

Applied Physics A: Materials Science & Processing, 2005, v. 80, n. 5, p. 1081, doi. 10.1007/s00339-003-2358-3

By:

Zangenberg, N.R.;
Larsen, A. Nylandsted

Publication type:

Article

Electrical characterization of impurity-free disordering-induced defects in n-GaAs using native oxide layers.

Published in:

Applied Physics A: Materials Science & Processing, 2003, v. 76, n. 6, p. 961, doi. 10.1007/s00339-002-1826-5

By:

Deenapanray, P.N.K.;
Tan, H.H.;
Jagadish, C.

Publication type:

Article

Enhancement of Piezoelectricity in Dimensionally Engineered Metal‐Halide Perovskites Induced by Deep Level Defects.

Published in:

Advanced Energy Materials, 2022, v. 12, n. 19, p. 1, doi. 10.1002/aenm.202200181

By:

Heo, Sung;
Lee, Do Yoon;
Lee, Dongwook;
Lee, Yonghui;
Kim, Kihong;
Yun, Hyun‐Sung;
Paik, Min Jae;
Shin, Tae Joo;
Oh, Hyeon Seung;
Shin, Taeho;
Kim, Jaekyung;
Kim, Seong Heon;
Seok, Sang Il;
Nazeeruddin, MohammadKhaja

Publication type:

Article

Enhanced Efficiency of Inorganic CsPbI3−xBrx Perovskite Solar Cell via Self‐Regulation of Antisite Defects.

Published in:

Advanced Energy Materials, 2021, v. 11, n. 23, p. 1, doi. 10.1002/aenm.202100403

By:

Yao, Zhun;
Xu, Zhuo;
Zhao, Wangen;
Zhang, Jingru;
Bian, Hui;
Fang, Yuankun;
Yang, Yan;
Liu, Shengzhong (Frank)

Publication type:

Article

Study of deep levels in GaAs p-i-n structures.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 924, doi. 10.1134/S1063782616070241

By:

Sobolev, M.;
Soldatenkov, F.;
Kozlov, V.

Publication type:

Article

Effect of surface passivation by SiN/SiO of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method.

Published in:

Semiconductors, 2013, v. 47, n. 7, p. 1008, doi. 10.1134/S1063782613070087

By:

Gassoumi, Malek;
Mosbahi, Hana;
Zaidi, Mohamed;
Gaquiere, Christophe;
Maaref, Hassen

Publication type:

Article

DLTS Study of plastically deformed copper-doped n-type germanium.

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 849, doi. 10.1134/S1063782613060250

By:

Shevchenko, S.;
Kolyubakin, A.

Publication type:

Article

Identification of copper-copper and copper-hydrogen complexes in silicon.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 275, doi. 10.1134/S1063782613020231

By:

Yarykin, N.;
Weber, J.

Publication type:

Article

Deep electron levels in undoped polycrystalline CdTe annealed in liquid Cd.

Published in:

Semiconductors, 2011, v. 45, n. 7, p. 865, doi. 10.1134/S1063782611070049

By:

Bobrova, E.;
Klevkov, Y.

Publication type:

Article

A Comment to the paper by E.A. Tatokhin, A.V. Kadantsev, A.E. Bormontov, and V.G. Zadorozhniy 'a statistical method of deep-level transient spectroscopy in semiconductors'.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 832, doi. 10.1134/S106378261106025X

By:

Yarykin, N.

Publication type:

Article

Photoinduced current transient spectroscopy of high-resistivity layered GaSe crystals.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 854, doi. 10.1134/S1063782610070031

By:

Odrinsky, A. P.

Publication type:

Article

Laplace-DLTS method with the regularization parameter chosen from the L curve.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 586, doi. 10.1134/S1063782609050078

By:

Levin, M. N.;
Tatarintzev, A. V.;
Akhkubekov, A. E.

Publication type:

Article

Wannier-stark effect in Ge/Si quantum dot superlattices.

Published in:

Semiconductors, 2008, v. 42, n. 3, p. 305, doi. 10.1134/S1063782608030111

By:

Sobolev, M. M.;
Cirlin, G. É.;
Tonkikh, A. A.;
Zakharov, N. D.

Publication type:

Article

Nonmonotonic variations in the concentration of the donor-and acceptor-type radiation defects in silicon irradiated with low-intensity fluxes of β particles.

Published in:

Semiconductors, 2006, v. 40, n. 12, p. 1375, doi. 10.1134/S1063782606120013

By:

Badylevich, M. V.;
Blokhin, I. V.;
Golovin, Yu. I.;
Dmitrievskiĭ, A. A.;
Kartsev, S. V.;
Suchkova, N. Yu.;
Tolotaev, M. Yu.

Publication type:

Article

Measurements of Deep Trap Concentration in Diodes with a High Schottky Barrier by Deep-Level Transient Spectroscopy.

Published in:

Semiconductors, 2002, v. 36, n. 6, p. 655, doi. 10.1134/1.1485665

By:

Agafonov, E. N.;
Georgobiani, A. N.;
Lepnev, L. S.

Publication type:

Article

Study of Electron Capture by Quantum Dots Using Deep-Level Transient Spectroscopy.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1175, doi. 10.1134/1.1410660

By:

Sobolev, M. M.;
Kochnev, I. V.;
Lantratov, V. M.;
Ledentsov, N. N.

Publication type:

Article

Distinctive features of the creation of radiation-induced defects in p-Si by photon-assisted low-dose ion implantation.

Published in:

Semiconductors, 1999, v. 33, n. 8, p. 821, doi. 10.1134/1.1187789

By:

Barabanenkov, M. Yu.;
Leonov, A. V.;
Mordkovich, V. N.;
Omelyanovskaya, N. M.

Publication type:

Article

Low-Frequency Noises and DLTS Studies in HgCdTe MWIR Photodiodes.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 10, p. 6113, doi. 10.1007/s11664-019-07213-7

By:

Guinedor, P.;
Brunner, A.;
Rubaldo, L.;
Bauza, D.;
Reimbold, G.;
Billon-Lanfrey, D.

Publication type:

Article

Effects of Iron Contamination and Hydrogen Passivation on the Electrical Properties of Oxygen Precipitates in CZ-Si.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 9, p. 5039, doi. 10.1007/s11664-018-6299-1

By:

Li, Jiyang;
Song, Lihui;
Yu, Xuegong;
Yang, Deren

Publication type:

Article

DLTS Analysis and Interface Engineering of Solution Route Fabricated Zirconia Based MIS Devices Using Plasma Treatment.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 2, p. 955, doi. 10.1007/s11664-017-5938-2

By:

Kumar, Arvind;
Mondal, Sandip;
Koteswara Rao, K.

Publication type:

Article

Study of Defects in GaN In Situ Doped with Eu Ion Grown by OMVPE.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2001, doi. 10.1007/s11664-016-4337-4

By:

Wang, Jingzhou;
Koizumi, Atsushi;
Fujiwara, Yasufumi;
Jadwisienczak, Wojciech

Publication type:

Article

Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements.

Published in:

Journal of Electronic Materials, 2012, v. 41, n. 3, p. 488, doi. 10.1007/s11664-011-1802-y

By:

Gul, R.;
Keeter, K.;
Rodriguez, R.;
Bolotnikov, A.E.;
Hossain, A.;
Camarda, G.S.;
Kim, K.H.;
Yang, G.;
Cui, Y.;
Carcelen, V.;
Franc, J.;
Li, Z.;
James, R.B.

Publication type:

Article