Works matching DE "SEMICONDUCTOR technology"

Results: 488

High-Quality Manufacturing with Electrochemical Jet Machining (ECJM) for Processing Applications: A Comprehensive Review, Challenges, and Future Opportunities.

Published in:

Micromachines, 2025, v. 16, n. 7, p. 794, doi. 10.3390/mi16070794

By:

Huang, Yong;
Hu, Yi;
Liu, Xincai;
Wang, Xin;
Wu, Siqi;
Shi, Hanqing

Publication type:

Article

VULCAN AUTOMATED LAB FOR PROCESS DEVELOPMENT.

Published in:

Electronic Device Failure Analysis, 2025, v. 27, n. 3, p. 42

By:

Kolasa, Ted

Publication type:

Article

Incentives First: A Critique of Current AI Governance Models.

Published in:

Harvard Political Review (Online), 2024, p. 1

By:

Ogbogu, Ikenna

Publication type:

Article

Electric-Field Control of the Temporal Attenuation of Right-Handed and Left-Handed Magnons in Antiferromagnets.

Published in:

Metallophysics & Advanced Technologies / Metallofizika i Novejsie Tehnologii, 2025, v. 47, n. 6, p. 581, doi. 10.15407/mfint.47.06.0581

By:

Boliasova, O. O.;
Krivoruchko, V. M.

Publication type:

Article

Modelling and simulation of organic (Sexithiophene) field effect transistors (OFETs).

Published in:

Applied Physics A: Materials Science & Processing, 2025, v. 131, n. 7, p. 1, doi. 10.1007/s00339-025-08673-x

By:

Dhaka, Sandeep Kumar;
Sushila;
Faujdar, Manu;
Saini, Sachin;
Daharwal, Shubham

Publication type:

Article

Efficient Image Processing Technique for Detecting Spatio-Temporal Erosion in Boron Nitride Exposed to Iodine Plasma.

Published in:

Nanomaterials (2079-4991), 2025, v. 15, n. 13, p. 961, doi. 10.3390/nano15130961

By:

Afifi, Ahmed S.;
Weerasinghe, Janith;
Prasad, Karthika;
Levchenko, Igor;
Alexander, Katia

Publication type:

Article

Analysis and Modeling of Single Event Transient Generation in Standard Combinational Cells.

Published in:

Journal of Electronic Testing, 2025, v. 41, n. 3, p. 287, doi. 10.1007/s10836-025-06175-5

By:

Andjelkovic, Marko;
Krstic, Milos

Publication type:

Article

Modulating electronic properties of bilayer silicene nanoribbons via carbon adsorption configurations.

Published in:

Journal of Materials Science, 2025, v. 60, n. 26, p. 10848, doi. 10.1007/s10853-025-11093-0

By:

He, Linhan;
Wu, Lijun;
Liu, Ya;
Zhang, Shuting

Publication type:

Article

High‐Mobility SnO Enabled by Doping‐Induced Interstitial Oxygen for All‐Oxide Complementary Logics.

Published in:

Advanced Functional Materials, 2025, v. 35, n. 27, p. 1, doi. 10.1002/adfm.202500132

By:

Han, Jing;
Hong, Ruohao;
Liu, Hanzhong;
Niu, Wencheng;
Yin, Xu;
Tang, Lin;
Zhang, Sen;
Song, Yu;
Meng, You;
He, Penghui;
Huang, Hao;
Tang, Liming;
Liu, Xingqiang;
Zou, Xuming;
Liao, Lei

Publication type:

Article

Unveiling interfacial dead layer in wurtzite ferroelectrics.

Published in:

Nature Communications, 2025, v. 16, n. 1, p. 1, doi. 10.1038/s41467-025-61291-2

By:

Wang, Jinlin;
Li, Yun-Qin;
Wang, Rui;
Liu, Qi;
Ye, Haotian;
Wang, Ping;
Xu, Xifan;
Yang, Huaiyuan;
Liu, Fang;
Sheng, Bowen;
Yang, Liuyun;
Yin, Xiaoyang;
Tong, Yi;
Wang, Tao;
Tong, Wen-Yi;
Li, Xin-Zheng;
Duan, Chun-Gang;
Shen, Bo;
Wang, Xinqiang

Publication type:

Article

China's Semiconductor Industry under US Restrictions.

Published in:

East Asian Policy, 2025, v. 17, n. 2, p. 126, doi. 10.1142/S1793930525000169

By:

DING, Ke

Publication type:

Article

The Silicon Sword Hanging Over China's Head: The Silicon Sword Hanging Over China's Head.

Published in:

Journal of Chinese Political Science, 2024, v. 29, n. 4, p. 559, doi. 10.1007/s11366-024-09883-5

By:

Woods, Dwayne

Publication type:

Article

The US–China Chip War, Economy–Security Nexus, and Asia.

Published in:

Journal of Chinese Political Science, 2024, v. 29, n. 3, p. 433, doi. 10.1007/s11366-024-09881-7

By:

Kim, Yongshin;
Rho, Sungho

Publication type:

Article

Towards Atomic-Scale Investigation of Resistive Switching in Memristive Systems via MEMS-based In Situ Electron Microscopy.

Published in:

Microscopy & Microanalysis, 2024, v. 30, p. 1, doi. 10.1093/mam/ozae044.781

By:

Molina-Luna, Leopoldo

Publication type:

Article

A Framework for Overcoming Resolution and Sensitivity Limits in 7nm Node Technology Inspection via Automated Imaging and Analysis.

Published in:

Microscopy & Microanalysis, 2024, v. 30, p. 1, doi. 10.1093/mam/ozae044.171

By:

Ghosh, Shajib;
Hasan, Md Mahfuz Al;
Varshney, Nitin;
Forghani, Reza;
Asadizanjani, Navid

Publication type:

Article

Developing High Resolution and High Precision Strain Mapping Methodologies for Materials Research and Semiconductor Technology.

Published in:

2019

By:

Zuo, Jian-Min;
Yuan, Renliang;
Kim, Honggyu;
Zhang, Jiong

Publication type:

Abstract

GET 212-2023 State Primary Standard for the mass concentration units of oxygen, hydrogen, and carbon dioxide in liquid media.

Published in:

Measurement Techniques, 2023, v. 66, n. 8, p. 562, doi. 10.1007/s11018-023-02268-9

By:

Stakheev, A. A.;
Dobrovolskiy, V. I.;
Stolboushkina, T. P.

Publication type:

Article

Definition of Weber-Ampere Characteristics of Electrical Devices by the Natural-Model Experiment Method.

Published in:

Measurement Techniques, 2016, v. 59, n. 7, p. 747, doi. 10.1007/s11018-016-1041-y

By:

Gorbatenko, N.;
Grechikhin, V.;
Lankin, M.;
Lankin, A.

Publication type:

Article

防护服用供气背包制冷装置结构设计与性能试验.

Published in:

Fluid Machinery, 2024, v. 52, n. 8, p. 1, doi. 10.3969/j.issn.l005-0329.2024.08.001

By:

李希萌;
索槐;
任建强;
李岳;
蔡庆明;
侯雨雷;
曾达幸

Publication type:

Article

膜分离技术在半导体废水处理领域的应用研究进展.

Published in:

Membrane Science & Technology (10078924), 2024, v. 44, n. 5, p. 178, doi. 10.16159/j.cnki.issn1007-8924.2024.05.022

By:

陈大志;
余亮;
周俊文;
冯霄;
王博

Publication type:

Article

Rapid single-shot parity spin readout in a silicon double quantum dot with fidelity exceeding 99%.

Published in:

NPJ Quantum Information, 2024, v. 10, n. 1, p. 1, doi. 10.1038/s41534-024-00813-0

By:

Takeda, Kenta;
Noiri, Akito;
Nakajima, Takashi;
Camenzind, Leon C.;
Kobayashi, Takashi;
Sammak, Amir;
Scappucci, Giordano;
Tarucha, Seigo

Publication type:

Article

Deep Neural Network Memory Performance and Throughput Modeling and Simulation Framework.

Published in:

Mathematics (2227-7390), 2022, v. 10, n. 21, p. 4144, doi. 10.3390/math10214144

By:

Gabbay, Freddy;
Lev Aharoni, Rotem;
Schweitzer, Ori

Publication type:

Article

Investigation of Source/Drain Height Variation and Its Impacts on FinFET and GAA Nanosheet FET.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 6, p. 1091, doi. 10.3390/electronics14061091

By:

Ma, Mingyu;
Li, Cong;
Ma, Jianghao;
Yang, Wangjun;
Li, Haokun;
You, Hailong;
Deen, M. Jamal

Publication type:

Article

Comparing Application-Level Hardening Techniques for Neural Networks on GPUs.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 5, p. 1042, doi. 10.3390/electronics14051042

By:

Esposito, Giuseppe;
Guerrero-Balaguera, Juan-David;
Rodriguez Condia, Josie E.;
Sonza Reorda, Matteo

Publication type:

Article

Review of Evolution and Rising Significance of Wafer-Level Electroplating Equipment in Semiconductor Manufacturing.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 5, p. 894, doi. 10.3390/electronics14050894

By:

Jiang, Tao;
Hu, Huiyong

Publication type:

Article

Efficient Neural Network-Based Compact Modeling for Novel Device Structures Using a Multi-Fidelity Model and Active Learning.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 23, p. 4840, doi. 10.3390/electronics13234840

By:

Jeong, HyunJoon;
Choi, JinYoung;
Kim, Yohan;
Kong, Jeong-Taek;
Kim, SoYoung

Publication type:

Article

Electronic Barriers Behavioral Analysis of a Schottky Diode Structure Featuring Two-Dimensional MoS 2.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 20, p. 4008, doi. 10.3390/electronics13204008

By:

Martínez-Angeles, Wendy Liliana;
González-Reynoso, Orfil;
Carbajal-Arizaga, Gregorio Guadalupe;
García-Ramírez, Mario Alberto

Publication type:

Article

A Novel CNFET SRAM-Based Compute-In-Memory for BNN Considering Chirality and Nanotubes.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 11, p. 2192, doi. 10.3390/electronics13112192

By:

Kim, Youngbae;
Alnatsheh, Nader;
Yadav, Nandakishor;
Cho, Jaeik;
Jo, Heeyoung;
Choi, Kyuwon Ken

Publication type:

Article

Exploring Hardware Fault Impacts on Different Real Number Representations of the Structural Resilience of TCUs in GPUs †.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 3, p. 578, doi. 10.3390/electronics13030578

By:

Limas Sierra, Robert;
Guerrero-Balaguera, Juan-David;
Condia, Josie E. Rodriguez;
Sonza Reorda, Matteo

Publication type:

Article

A Study on the Design Procedure of Re-Configurable Convolutional Neural Network Engine for FPGA-Based Applications.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 23, p. 3883, doi. 10.3390/electronics11233883

By:

Kumar, Pervesh;
Ali, Imran;
Kim, Dong-Gyun;
Byun, Sung-June;
Kim, Dong-Gyu;
Pu, Young-Gun;
Lee, Kang-Yoon

Publication type:

Article

Bridging the Gap between Physical and Circuit Analysis for Variability-Aware Microwave Design: Power Amplifier Design.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 18, p. N.PAG, doi. 10.3390/electronics11182832

By:

Donati Guerrieri, Simona;
Ramella, Chiara;
Catoggio, Eva;
Bonani, Fabrizio

Publication type:

Article

Bias Temperature Instability of MOSFETs: Physical Processes, Models, and Prediction.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 9, p. N.PAG, doi. 10.3390/electronics11091420

By:

Zhang, Jian Fu;
Gao, Rui;
Duan, Meng;
Ji, Zhigang;
Zhang, Weidong;
Marsland, John

Publication type:

Article

Watt-Level Ka-Band Integrated Doherty Power Amplifiers: Technologies and Power Combination Strategies Invited Paper.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 1, p. 84, doi. 10.3390/electronics11010084

By:

Piacibello, Anna;
Camarchia, Vittorio

Publication type:

Article

GaAs-Based Serial-Input-Parallel-Output Interfaces for Microwave Core-Chips.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 23, p. 3029, doi. 10.3390/electronics10233029

By:

Ramella, Chiara;
Estebsari, Motahhareh;
Nasri, Abbas;
Pirola, Marco

Publication type:

Article

Optimization of TSV Leakage in Via-Middle TSV Process for Wafer-Level Packaging.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 19, p. 2370, doi. 10.3390/electronics10192370

By:

Liu, Xuanjie;
Sun, Qingqing;
Huang, Yiping;
Chen, Zheng;
Liu, Guoan;
Zhang, David Wei

Publication type:

Article

Lumped Parameter Modeling Based Power Loop Analysis Technique of Power Circuit Board with Wide Conduction Area for WBG Semiconductors.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 14, p. 1722, doi. 10.3390/electronics10141722

By:

Lee, Gi-Young;
Cho, Min-Shin;
Kim, Rae-Young

Publication type:

Article

Junctionless Transistors: State-of-the-Art.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 7, p. 1174, doi. 10.3390/electronics9071174

By:

Nowbahari, Arian;
Roy, Avisek;
Marchetti, Luca

Publication type:

Article

Key technology and development of industry–academia collaboration patents derived from the government subsidy program.

Published in:

Science & Public Policy (SPP), 2024, v. 51, n. 4, p. 748, doi. 10.1093/scipol/scae015

By:

Chang, Shu-Hao

Publication type:

Article

Status and Trends of Power Devices.

Published in:

Electrotehnica, Electronica, Automatica, 2021, v. 69, n. 4, p. 66, doi. 10.46904/eea.21.69.4.1108008

By:

BĂJENESCU, Titu-Marius I.

Publication type:

Article

Demonstration of accurate ID-VG characteristics modeling in SiC mosfets using separated artificial neural networks with small training dataset.

Published in:

Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-025-03005-8

By:

Chankla, Manopat;
Chen, Bang-Ren;
Singh, Shivendra Kumar;
Chauhan, Yogesh Singh;
Lee, Wen-Jay;
Chen, Nan-Yow;
Kanjanachuchai, Songphol;
Wu, Tian-Li

Publication type:

Article

Virus detection and quantification using electrical parameters.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep06831

By:

Al Ahmad, Mahmoud;
Mustafa, Farah;
Ali, Lizna M.;
Rizvi, Tahir A.

Publication type:

Article

An Ultra-Low-Power and High Sensibility of the Smart CMOS (Si and 4H-SiC) Temperature Sensor in 130 nm Technology.

Published in:

Journal of Nano- & Electronic Physics, 2023, v. 15, n. 6, p. 1, doi. 10.21272/jnep.15(6).06011

By:

Hebali, M.;
Ibari, B.;
Bennaoum, M.;
Berka, M.;
Beyour, M. El-A.;
Maachou, A.

Publication type:

Article

Improving the Electrical Properties of ITO/Si/GaAs/Si/ITO Solar Cell by Changing the GaAs Layer Position.

Published in:

Journal of Nano- & Electronic Physics, 2023, v. 15, n. 1, p. 01023-1, doi. 10.21272/jnep.15(1).01023

By:

Hebali, M.;
Bennaoum, M.;
Azzeddine, H. A.;
Ibari, B.;
Maachou, A.;
Chalabi, D.

Publication type:

Article

Laser‐Annealed SiO2/Si1−xGex Scaffolds for Nanoscaled Devices, Synergy of Experiment, and Computation.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 24, p. 1, doi. 10.1002/pssa.202400120

By:

Ricciarelli, Damiano;
Müller, Jonas;
Larrieu, Guilhem;
Deretzis, Ioannis;
Calogero, Gaetano;
Martello, Enrico;
Fisicaro, Giuseppe;
Hartmann, Jean‐Michel;
Kerdilès, Sébastien;
Opprecht, Mathieu;
Mio, Antonio Massimiliano;
Daubriac, Richard;
Cristiano, Fuccio;
La Magna, Antonino

Publication type:

Article

Engineering of Functional Interfaces.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 19, p. 1, doi. 10.1002/pssa.202400676

By:

Doll, Theodor;
Pérez, Patricia Losada;
Schöning, Michael Josef

Publication type:

Article

Gettering and Defect Engineering in Semiconductor Technology (GADEST 2024).

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 17, p. 1, doi. 10.1002/pssa.202400631

By:

Heitmann, Johannes;
Beyer, Franziska;
Hiller, Daniel;
Mchedlidze, Teimuraz;
Müller, Matthias

Publication type:

Article

Recent Progress of E‐mode Gallium Nitride Metal–Insulator–Semiconductor ‐High Electron Mobility Transistors with Hybrid Ferroelectric Charge Trap Gate (FEG‐HEMT) for Power Switching Applications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202370036

By:

Wu, Jui-Sheng;
Weng, You-Chen;
Yang, Tsung-Ying;
Wu, Chia-Hsun;
Lee, Chih-Chieh;
Iwai, Hiroshi;
Chang, Edward Yi

Publication type:

Article

External Gettering of Metallic Impurities by Black Silicon Layer.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 5, p. 1, doi. 10.1002/pssa.202200793

By:

Ayvazyan, Gagik;
Hakhoyan, Levon;
Ayvazyan, Karen;
Aghabekyan, Arthur

Publication type:

Article

Three‐Input Magnetic Logic Gates Using Magnetic Vortex Transistor.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 22, p. 1, doi. 10.1002/pssa.202200397

By:

Bhattacharjee, Payal;
Barman, Saswati

Publication type:

Article

Blocking Si‐Induced Visible Photoresponse in n‐MgxZn1–xO/p‐Si Heterojunction UV Photodetectors Using MgO Barrier Layer.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 22, p. 1, doi. 10.1002/pssa.202200285

By:

Chetia, Shantanu K.;
Das, Amit K.;
Ajimsha, Rohini S.;
Banik, Soma;
Singh, Rashmi;
Padhi, Partha S.;
Sharma, Tarun K.;
Misra, Pankaj

Publication type:

Article