Works matching DE "CARBON nanotube field effect transistors"
Results: 143
Design and Simulation of Reconfigurable Logic Circuits using CNTFETs.
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- Journal of Ultra Scientist of Physical Sciences - Section A (Mathematics), 2018, v. 30, n. 1, p. 45, doi. 10.22147/jusps-A/300106
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Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors.
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- Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300519
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طراحی و بهینه سازی یک تمام جمع کنندۀ تقریبی مبتنی بر ترانزیستورهای نانولولۀ کربنی و بررسی کاربرد آن در پردازش تصویر دیجیتال
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- Computational Intelligence in Electrical Engineering, 2020, v. 11, n. 3, p. 25
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Ternary Adder and Multiplier Design using GNRFETs.
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- Grenze International Journal of Engineering & Technology (GIJET), 2023, v. 9, n. 2, p. 670
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Efficient Techniques in Full Adders and Logic Gates with Optimum use of Multi Valued Logic, Double Pass Logic and Ternary Logic in CNTFET Technology with Comparative Analysis with CMOS Technology.
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- Grenze International Journal of Engineering & Technology (GIJET), 2021, v. 7, n. 2, p. 143
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Modeling of Carbon Nanotube Field Effect Transistor based Amplifier in Common Source Configuration using Pspice.
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- Grenze International Journal of Engineering & Technology (GIJET), 2020, v. 6, n. 2, p. 242
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Performance Optimization of 1-bit Full Adder Cell based on CNTFET Transistor.
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- Engineering, Technology & Applied Science Research, 2019, v. 9, n. 6, p. 4933, doi. 10.48084/etasr.3156
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A PSO based optimal repeater insertion technique for carbon nanotube interconnects.
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- International Journal of Electronics Letters, 2022, v. 10, n. 3, p. 344, doi. 10.1080/21681724.2021.1941283
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Microscopic investigation of single-wall carbon nanotube uptake by Daphnia magna.
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- Nanotoxicology, 2014, v. 8, p. 2, doi. 10.3109/17435390.2013.847504
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Design of Efficient Ternary Operators for Scrambling in CNTFET Technology.
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- Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2020, v. 45, n. 8, p. 6729, doi. 10.1007/s13369-020-04677-2
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A Novel Design of Ternary Full Adder Using CNTFETs.
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- Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2014, v. 39, n. 11, p. 7839, doi. 10.1007/s13369-014-1350-x
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Minimization of CNTFET Ternary Combinational Circuits Using Negation of Literals Technique.
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- Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2014, v. 39, n. 6, p. 4875, doi. 10.1007/s13369-014-1147-y
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CNFET-Based Design of Energy-Efficient Symmetric Three-Input XOR and Full Adder Circuits.
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- Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2013, v. 38, n. 12, p. 3367, doi. 10.1007/s13369-013-0627-9
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CNTFET Based Fully Differential First Order All Pass Filter.
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- Computer Systems Science & Engineering, 2023, v. 44, n. 3, p. 2425, doi. 10.32604/csse.2023.027570
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Superhydrophobic carbon nanotube/ polydimethylsiloxane composite coatings.
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- Materials Science & Technology, 2015, v. 31, n. 14, p. 1745, doi. 10.1179/1743284714Y.0000000752
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Effects of Temperature Dependence of Energy Bandgap on I-V Characteristics in CNTFETs Models.
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- International Journal of Nanoscience, 2017, v. 16, n. 5/6, p. -1, doi. 10.1142/S0219581X17500090
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Comparative Analysis of Control Coefficients on the Performance of CNTFET Under Different Parameters.
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- International Journal of Nanoscience, 2016, v. 15, n. 3, p. 1, doi. 10.1142/S0219581X16400056
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Effects of Microwave Absorption on Long and Short Single-Walled Carbon Nanotubes at 10<sup>-6</sup> Torr.
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- International Journal of Nanoscience, 2015, v. 14, n. 5/6, p. 1550025-1, doi. 10.1142/S0219581X15500258
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Asymmetric lightly doped Schottky barrier CNTFET.
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- Micro & Nano Letters (Wiley-Blackwell), 2016, v. 11, n. 3, p. 169, doi. 10.1049/mnl.2015.0434
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Temperature dependence of carrier transport and electrical characteristics of Schottky-barrier carbon nanotube field effect transistors.
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- Micro & Nano Letters (Wiley-Blackwell), 2016, v. 11, n. 2, p. 114, doi. 10.1049/mnl.2015.0448
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Low power area efficient self-gated flip flop: Design, implementation and analysis in emerging devices.
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- Engineering & Applied Science Research, 2022, v. 49, n. 6, p. 744, doi. 10.14456/easr.2022.72
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A Full Adder Design with CNFETs for Real Time, Fault Tolerant and Mission Critical Applications.
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- Electronics / Elektronika (1450-5843), 2020, v. 24, n. 2, p. 66, doi. 10.7251/ELS2024066S
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A low leakage TG‐CNTFET–based inexact full adder for low power image processing applications.
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- International Journal of Circuit Theory & Applications, 2019, v. 47, n. 9, p. 1446, doi. 10.1002/cta.2672
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High-Efficiency Large-Area Carbon Nanotube-Silicon Solar Cells.
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- Advanced Energy Materials, 2016, v. 6, n. 12, p. n/a, doi. 10.1002/aenm.201600095
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Design of Multi-Valued Logic Circuit Using Carbon Nano Tube Field Transistors.
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- Computers, Materials & Continua, 2022, v. 73, n. 3, p. 5283, doi. 10.32604/cmc.2022.027975
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CNTFET Based Grounded Active Inductor for Broadband Applications.
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- Computers, Materials & Continua, 2022, v. 73, n. 1, p. 2135, doi. 10.32604/cmc.2022.026831
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Toward the Commercialization of Carbon Nanotube Field Effect Transistor Biosensors.
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- Biosensors (2079-6374), 2023, v. 13, n. 3, p. 326, doi. 10.3390/bios13030326
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Novel Second-Order Fully Differential All-Pass Filter Using CNTFETs.
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- Micromachines, 2023, v. 14, n. 10, p. 1873, doi. 10.3390/mi14101873
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Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM).
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- Micromachines, 2021, v. 12, n. 11, p. 1288, doi. 10.3390/mi12111288
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An Effective Approach towards the Immobilization of PtSn Nanoparticles on Noncovalent Modified Multi-Walled Carbon Nanotubes for Ethanol Electrooxidation.
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- Energies (19961073), 2016, v. 9, n. 3, p. 165, doi. 10.3390/en9030165
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Characterization of a Gm-C Filter Based on CNTFETs for Use in Digital Audio Broadcasting Systems.
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- Journal of Electronic Materials, 2019, v. 48, n. 11, p. 7003, doi. 10.1007/s11664-019-07497-9
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Parameterized Comparison of Nanotransistors Based on CNT and GNR Materials: Effect of Variation in Gate Oxide Thickness and Dielectric Constant.
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- Journal of Electronic Materials, 2019, v. 48, n. 5, p. 3078, doi. 10.1007/s11664-019-07062-4
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Circuit Compatible Model for Electrostatic Doped Schottky Barrier CNTFET.
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- Journal of Electronic Materials, 2016, v. 45, n. 10, p. 5381, doi. 10.1007/s11664-016-4743-7
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Non-covalent polymer wrapping of carbon nanotubes and the role of wrapped polymers as functional dispersants.
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- Science & Technology of Advanced Materials, 2015, v. 16, n. 2, p. 1, doi. 10.1088/1468-6996/16/2/024802
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A Novel High-Speed and Low-PDP Approximate Full Adder Cell for Image Blending.
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- Mathematics (2227-7390), 2023, v. 11, n. 12, p. 2649, doi. 10.3390/math11122649
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Optimization of CNFET Parameters for High Performance Digital Circuits.
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- Advances in Materials Science & Engineering, 2016, p. 1, doi. 10.1155/2016/6303725
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CNTFET VDGA tabanlı ultra düşük güç düşük voltaj yüksek frekanslı filtre uygulamaları.
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- Journal of the Faculty of Engineering & Architecture of Gazi University / Gazi Üniversitesi Mühendislik Mimarlık Fakültesi Dergisi,, 2024, v. 39, n. 3, p. 1555, doi. 10.17341/gazimmfd.1223428
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The Design and Simulation of an Efficient Quaternary Full-Adder Based on Carbon Nanotube Field Effect Transistor.
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- International Journal of Industrial Electronics Control & Optimization, 2024, v. 7, n. 2, p. 153
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Suppression of Ambipolar Conduction in Schottky Barrier Carbon Nanotube Field Effect Transistors: Modeling, Optimization Using Particle Swarm Intelligence, and Fabrication.
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- Computer Modeling in Engineering & Sciences (CMES), 2019, v. 119, n. 3, p. 577, doi. 10.32604/cmes.2019.04718
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Voltage Differencing Transconductance Amplifier based Ultra-Low Power, Universal Filters and Oscillators using 32 nm Carbon Nanotube Field Effect Transistor Technology.
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- Informacije MIDEM: Journal of Microelectronics, Electronic Components & Materials, 2020, v. 50, n. 4, p. 233, doi. 10.33180/InfMIDEM2020.401
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Carbon Nanotubes-Based Digitally Programmable Current Follower.
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- VLSI Design, 2018, p. 1, doi. 10.1155/2018/1080817
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High-Efficient Circuits for Ternary Addition.
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- VLSI Design, 2014, p. 1, doi. 10.1155/2014/534587
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Analysis and design of current mode logic based on CNTFET.
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- AIMS Materials Science, 2023, v. 10, n. 6, p. 965, doi. 10.3934/matersci.2023052
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A Low-Power, High-Resolution Analog Front-End Circuit for Carbon-Based SWIR Photodetector.
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- Electronics (2079-9292), 2024, v. 13, n. 18, p. 3708, doi. 10.3390/electronics13183708
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A Novel CNFET SRAM-Based Compute-In-Memory for BNN Considering Chirality and Nanotubes.
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- Electronics (2079-9292), 2024, v. 13, n. 11, p. 2192, doi. 10.3390/electronics13112192
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Radiation Effects of Advanced Electronic Devices and Circuits.
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- Electronics (2079-9292), 2024, v. 13, n. 6, p. 1073, doi. 10.3390/electronics13061073
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An Improved Dual-Gate Compact Model for Carbon Nanotube Field Effect Transistors with a Back-Gate Effect and Circuit Implementation.
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- Electronics (2079-9292), 2024, v. 13, n. 3, p. 620, doi. 10.3390/electronics13030620
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Effect of Trapped Charge Induced by Total Ionizing Dose Radiation on the Top-Gate Carbon Nanotube Field Effect Transistors.
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- Electronics (2079-9292), 2023, v. 12, n. 4, p. 1000, doi. 10.3390/electronics12041000
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Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) Based Ternary Combinational Logic Circuits.
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- Electronics (2079-9292), 2021, v. 10, n. 1, p. 79, doi. 10.3390/electronics10010079
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A Compact and Robust Technique for the Modeling and Parameter Extraction of Carbon Nanotube Field Effect Transistors.
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- Electronics (2079-9292), 2020, v. 9, n. 12, p. 2199, doi. 10.3390/electronics9122199
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