中国科学院沈阳科学仪器股份有限公司.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 930
- Publication type:
- Article
Works matching IS 1000985X AND DT 2023 AND VI 52 AND IP 5
Results: 28
1
2
香港协和国际贸易服务公司.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 929
- Publication type:
- Article
3
Dr. Eberl MBE-Komponenten GmbH 公司.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 928
- Publication type:
- Article
4
费勉仪器科技(上海)有限公司.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 927
- Publication type:
- Article
5
北京博宇半导体工艺技术有限公司.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 926
- Publication type:
- Article
6
济南大学刘宏团队在 8 英寸 X 轴铌酸锂晶体 制备技术领域取得新突破.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 925
- Publication type:
- Article
7
高速旋转垂直热壁 CVD 外延生长 n 型 4H-SiC 膜的研究.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 918
- By:
- Publication type:
- Article
8
枝晶 WS<sub>2</sub> / 单层 WS<sub>2</sub> 薄膜的 CVD 可控制备与表征.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 909
- By:
- Publication type:
- Article
9
多晶金刚石衬底范德瓦耳斯外延 GaN 薄膜.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 901
- By:
- Publication type:
- Article
10
石墨烯上异质远程外延 GaN 的研究.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 894
- By:
- Publication type:
- Article
11
单层 α-MoO<sub>3</sub> 半导体薄膜的范德瓦耳斯外延制备.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 886
- By:
- Publication type:
- Article
12
金属调制分子束外延生长氮化铝薄膜.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 878
- By:
- Publication type:
- Article
13
单晶金刚石异质外延用铱复合衬底研究现状.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 857
- By:
- Publication type:
- Article
14
Er 掺杂 WS<sub>2</sub> 的制备及光电特性研究.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 849
- By:
- Publication type:
- Article
15
退火方式及温度对层层碘化法 CuI 薄膜结构、 形貌和光电性能的影响.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 842
- By:
- Publication type:
- Article
16
六方氮化硼外延生长研究进展.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 825
- By:
- Publication type:
- Article
17
高功率多结 905 nm 垂直腔面发射激光器.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 818
- By:
- Publication type:
- Article
18
Micro-LED 的侧壁损伤以及光学特性.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 812
- By:
- Publication type:
- Article
19
高成品率和平整度的 GaN 基 Micro LED 芯片 激光剥离工艺的研究.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 805
- By:
- Publication type:
- Article
20
反应磁控溅射制备 h-BN 薄膜及其日盲紫外探测器.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 798
- By:
- Publication type:
- Article
21
MOCVD 外延生长 InN 薄膜及其光学性质研究.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 791
- By:
- Publication type:
- Article
22
分子束外延高 Al 组分 AlGaN 薄膜及 Si 掺杂研究.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 783
- By:
- Publication type:
- Article
23
用于单片集成的硅基外延Ⅲ-Ⅴ族量子阱和 量子点激光器研究.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 766
- By:
- Publication type:
- Article
24
基于聚氨酯垫的 4H-SiC 单晶衬底研磨性质研究.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 759
- By:
- Publication type:
- Article
25
利用干燥空气改善熔融 KOH 对单晶碳化硅的腐蚀.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 753
- By:
- Publication type:
- Article
26
基于复合势垒的 AlGaN/ GaN 异质结材料的 制备与性能研究.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 746
- By:
- Publication type:
- Article
27
金刚石肖特基二极管的研究进展.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 732
- By:
- Publication type:
- Article
28
Si 衬底上外延生长 GaN 基射频电子材料的研究进展.
- Published in:
- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 723
- By:
- Publication type:
- Article