Works matching DE "ALUMINUM gallium nitride"
Results: 296
Aluminium and Gallium Silylimides as Nitride Sources**.
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- Chemistry - A European Journal, 2023, v. 29, n. 66, p. 1, doi. 10.1002/chem.202302512
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Thermoelectrics: Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering (Adv. Funct. Mater. 22/2018).
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- Advanced Functional Materials, 2018, v. 28, n. 22, p. 1, doi. 10.1002/adfm.201870152
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Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering.
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- Advanced Functional Materials, 2018, v. 28, n. 22, p. 1, doi. 10.1002/adfm.201705823
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Stress generation and relaxation in (Al,Ga)N/6 H-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy.
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- Technical Physics Letters, 2017, v. 43, n. 5, p. 443, doi. 10.1134/S106378501705008X
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Radiation enhancement in doped AlGaN-structures upon optical pumping.
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- Technical Physics Letters, 2017, v. 43, n. 1, p. 46, doi. 10.1134/S1063785017010059
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Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel.
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- Technical Physics Letters, 2016, v. 42, n. 11, p. 1079, doi. 10.1134/S1063785016110031
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Microwave power amplifiers based on AlGaN/GaN transistors with a two-dimensional electron gas.
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- Technical Physics Letters, 2016, v. 42, n. 11, p. 1061, doi. 10.1134/S1063785016110110
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The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial.
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- Technical Physics Letters, 2016, v. 42, n. 7, p. 701, doi. 10.1134/S1063785016070075
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Normally off transistors based on in situ passivated AlN/GaN heterostructures.
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- Technical Physics Letters, 2016, v. 42, n. 7, p. 750, doi. 10.1134/S1063785016070312
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The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy.
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- Technical Physics Letters, 2015, v. 41, n. 10, p. 1006, doi. 10.1134/S1063785015100247
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Selective MBE growth of nonalloyed ohmic contacts to 2D electron gas in high-electron-mobility transistors based on GaN/AlGaN heterojunctions.
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- Technical Physics Letters, 2014, v. 40, n. 6, p. 488, doi. 10.1134/S1063785014060091
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Comparative Modelling and Thermal Analysis of AlGaN/GaN Power Devices.
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- Journal of Low Power Electronics & Applications, 2021, v. 11, n. 3, p. 33, doi. 10.3390/jlpea11030033
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Efficient 3D-TLM Modeling and Simulation for the Thermal Management of Microwave AlGaN/GaN HEMT Used in High Power Amplifiers SSPA.
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- Journal of Low Power Electronics & Applications, 2018, v. 8, n. 3, p. 23, doi. 10.3390/jlpea8030023
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Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates.
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- Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 1, p. 1, doi. 10.1002/pssr.202200323
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Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy.
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- Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 7, p. 1, doi. 10.1002/pssr.202100090
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High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V.
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- Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 6, p. 1, doi. 10.1002/pssr.202000576
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Stark Resonances Induced by the Exchange-Correlation Potential in Piezoelectric Nanowires.
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- Physica Status Solidi - Rapid Research Letters, 2017, v. 11, n. 11, p. n/a, doi. 10.1002/pssr.201700248
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Reduced Turn-On Voltage for npn Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment.
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- Advances in Materials Science & Engineering, 2012, p. 1, doi. 10.1155/2012/654762
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Study of threading dislocation density reduction in AlGaN epilayers by Monte Carlo simulation of high-resolution reciprocal-space maps of a two-layer system.
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- Journal of Applied Crystallography, 2013, v. 46, n. 1, p. 120, doi. 10.1107/S0021889812043051
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AlGaN devices and growth of device structures.
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- Journal of Materials Science, 2015, v. 50, n. 9, p. 3267, doi. 10.1007/s10853-015-8878-3
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Optimizing electrical and thermal performance in AlGaN/GaN HEMT devices using dual‐metal gate technology.
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- Heat Transfer, 2024, v. 53, n. 7, p. 3487, doi. 10.1002/htj.23099
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Linearity improvement in E-mode ferroelectric GaN MOS-HEMT using dual gate technology.
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- Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 6, p. 618, doi. 10.1049/mnl.2018.5499
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Etched Al<sub>0.32</sub>Ga<sub>0.68</sub>N/GaN HEMTs with high output current and breakdown voltage (>600 V).
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- Micro & Nano Letters (Wiley-Blackwell), 2018, v. 13, n. 5, p. 676, doi. 10.1049/mnl.2017.0651
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Enhancement-mode AlGaN/GaN HEMTs with optimised electric field using a partial GaN cap layer.
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- Micro & Nano Letters (Wiley-Blackwell), 2017, v. 12, n. 10, p. 763, doi. 10.1049/mnl.2017.0042
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Design optimisation of AlGaN/GaN metal insulator semiconductor high electron mobility transistor with high-K/low-K compound gate dielectric layer for millimeter-wave application.
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- Micro & Nano Letters (Wiley-Blackwell), 2016, v. 11, n. 9, p. 503, doi. 10.1049/mnl.2016.0370
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Simulation and Analysis of n-Type Electron Blocking Layers in GaN-Based Light-Emitting Diodes.
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- Mathematical Modelling of Engineering Problems, 2024, v. 11, n. 11, p. 2912, doi. 10.18280/mmep.111104
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Growth of SiC, AlN, and GaN Films on Silicon Parts of Arbitrary Geometry for Microelectromechanical Applications.
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- Technical Physics Letters, 2023, v. 49, p. S319, doi. 10.1134/S1063785023010182
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Dielectric and Pyroelectric Properties of Composites Based on Aluminum and Gallium Nitrides Grown by Chloride-Hydride Epitaxy on a Silicon Carbide-on-Silicon Substrate.
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- Technical Physics Letters, 2021, v. 47, n. 6, p. 466, doi. 10.1134/S1063785021050138
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Highly efficient X-range AlGaN/GaN power amplifier.
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- Technical Physics Letters, 2017, v. 43, n. 9, p. 787, doi. 10.1134/S1063785017090103
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Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency.
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- Nanoscale Research Letters, 2018, v. 13, n. 1, p. 1, doi. 10.1186/s11671-018-2539-9
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Physics‐Based Simulation for Studying the Impact of Contact Resistance on DC and RF Characteristics of AlGaN/AlN/GaN HEMT.
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- Radio Science, 2019, v. 54, n. 10, p. 904, doi. 10.1029/2019RS006855
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A novel method for the fabrication of AlGaN/GaN HEMTs on Si (111) substrates.
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- International Journal of Advanced Manufacturing Technology, 2013, v. 67, n. 5-8, p. 1491, doi. 10.1007/s00170-012-4583-4
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Carrier transport mechanism of ohmic contacts to AlGaN/GaN heterostructures analysed by parallel network model.
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- Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 8, p. 1, doi. 10.1049/el.2013.0463
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breaking down resistance.
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- Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 6, p. 378, doi. 10.1049/el.2013.0697
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High-breakdown voltage and low onresistance AlGaN/GaN on Si MOS-HEMTs employing an extended TaN gate on HfO<sub>2</sub> gate insulator.
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- Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 6, p. 1, doi. 10.1049/el.2013.0149
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Wpływ światła na rezystancję powierzchniową heterostruktury AlGaN/GaN.
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- Przegląd Elektrotechniczny, 2018, v. 94, n. 9, p. 29, doi. 10.15199/48.2018.09.07
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Defects and stresses in MBE-grown GaN and AlGaN layers doped by silicon using silane.
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- Crystallography Reports, 2013, v. 58, n. 7, p. 1023, doi. 10.1134/S106377451307016X
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Influence of Quantum-Well Number and an AlN Electron Blocking Layer on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes.
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- Applied Sciences (2076-3417), 2018, v. 8, n. 12, p. 2402, doi. 10.3390/app8122402
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AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Reduced Graphene Oxide Contacts.
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- Applied Sciences (2076-3417), 2018, v. 8, n. 11, p. 2098, doi. 10.3390/app8112098
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A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire.
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- Applied Sciences (2076-3417), 2018, v. 8, n. 8, p. 1264, doi. 10.3390/app8081264
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Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure.
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- Applied Sciences (2076-3417), 2018, v. 8, n. 6, p. 974, doi. 10.3390/app8060974
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Deep-level defects and turn-on capacitance recovery characteristics in AlGaN/GaN heterostructures.
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- Philosophical Magazine Letters, 2015, v. 95, n. 6, p. 333, doi. 10.1080/09500839.2015.1062154
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Understanding and Quantifying the Benefit of Graded Aluminum Gallium Nitride Channel High-Electron Mobility Transistors.
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- Micromachines, 2024, v. 15, n. 11, p. 1356, doi. 10.3390/mi15111356
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Reducing Off-State and Leakage Currents by Dielectric Permittivity-Graded Stacked Gate Oxides on Trigate FinFETs: A TCAD Study.
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- Micromachines, 2024, v. 15, n. 6, p. 726, doi. 10.3390/mi15060726
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Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications.
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- Micromachines, 2024, v. 15, n. 1, p. 81, doi. 10.3390/mi15010081
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In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication.
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- Micromachines, 2023, v. 14, n. 7, p. 1278, doi. 10.3390/mi14071278
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Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review.
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- Micromachines, 2022, v. 13, n. 12, p. 2133, doi. 10.3390/mi13122133
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AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics.
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- Micromachines, 2020, v. 11, n. 12, p. 1131, doi. 10.3390/mi11121131
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Minimum Power Input Control for Class-E Amplifier Using Depletion-Mode Gallium Nitride High Electron Mobility Transistor.
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- Energies (19961073), 2021, v. 14, n. 8, p. 2302, doi. 10.3390/en14082302
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Modeling of Enhancement Mode HEMT with Π-Gate Optimization for High Power Applications.
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- International Journal of High Speed Electronics & Systems, 2023, v. 32, n. 2-4, p. 1, doi. 10.1142/S0129156423500064
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