Transition Metal Dichalcogenide-Based Transistor Circuits for Gray Scale Organic Light-Emitting Displays.
- Published in:
- Advanced Functional Materials, 2017, v. 27, n. 2, p. n/a, doi. 10.1002/adfm.201603682
- By:
- Publication type:
- Article
Works matching DE "PERFORMANCE of transistors"
Results: 41
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Non-ideal current drop behavior in ultra-thin inorganic a-InGaZnO thin film transistors.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 11, p. 8231, doi. 10.1007/s10854-017-6534-1
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- Publication type:
- Article
3
Full flexible performance characterization of a feedback applied transistor with LNA applications.
- Published in:
- International Journal of Circuit Theory & Applications, 2020, v. 48, n. 1, p. 56, doi. 10.1002/cta.2728
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- Publication type:
- Article
4
Variability Analysis of Stochastic Parameters on the Electrical Performance of On-Chip Current-Mode Interconnect System.
- Published in:
- IETE Journal of Research, 2017, v. 63, n. 2, p. 268, doi. 10.1080/03772063.2016.1257374
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- Publication type:
- Article
5
Comparative study of a-IGZO TFTs with direct current and radio frequency sputtered channel layers.
- Published in:
- Journal of the Society for Information Display, 2015, v. 23, n. 7, p. 306, doi. 10.1002/jsid.388
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- Publication type:
- Article
6
Design of a high‐efficiency dual‐band class‐J/J power amplifier considering concurrent‐mode input drive.
- Published in:
- International Journal of RF & Microwave Computer-Aided Engineering, 2020, v. 30, n. 3, p. N.PAG, doi. 10.1002/mmce.22064
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- Publication type:
- Article
7
Impact of non-uniformly doped double-gate junctionless transistor on the performance of 6T-SRAM bitcell.
- Published in:
- Micro & Nano Letters (Wiley-Blackwell), 2020, v. 15, n. 2, p. 72, doi. 10.1049/mnl.2019.0375
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- Publication type:
- Article
8
Diameter optimisation for highest DoB of CNT-FETs.
- Published in:
- Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 6, p. 590, doi. 10.1049/mnl.2018.5604
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- Publication type:
- Article
9
Performance and electrical characteristics of hybrid carbon nanotube field effect transistors.
- Published in:
- Micro & Nano Letters (Wiley-Blackwell), 2016, v. 11, n. 9, p. 476, doi. 10.1049/mnl.2016.0241
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- Publication type:
- Article
10
Performance Optimization of Broadwell-Y Shaped Transistor using Artificial Neural Network and Moth-Flame Optimization Technique.
- Published in:
- Majlesi Journal of Electrical Engineering, 2018, v. 12, n. 1, p. 61
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- Publication type:
- Article
11
Improvement of the Bias Stress Stability in 2D MoS2 and WS2 Transistors with a TiO2 Interfacial Layer.
- Published in:
- Nanomaterials (2079-4991), 2019, v. 9, n. 8, p. 1155, doi. 10.3390/nano9081155
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- Publication type:
- Article
12
Improved Transistor Performance by Modulating Molecular Packing with Donor and Acceptor Moieties.
- Published in:
- Chemistry - An Asian Journal, 2019, v. 14, n. 10, p. 1686, doi. 10.1002/asia.201801855
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- Publication type:
- Article
13
BN‐Embedded Tetrabenzopentacene: A Pentacene Derivative with Improved Stability.
- Published in:
- Angewandte Chemie, 2019, v. 131, n. 31, p. 10818, doi. 10.1002/ange.201905601
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- Publication type:
- Article
14
Design of Low Power Si0.7Ge0.3 Pocket Junction-Less Tunnel FET Using Below 5 nm Technology.
- Published in:
- Wireless Personal Communications, 2020, v. 111, n. 4, p. 2167, doi. 10.1007/s11277-019-06978-8
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- Publication type:
- Article
15
Super class-AB bulk-driven OTAs with improved slew rate.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 19, p. 1488, doi. 10.1049/el.2015.1776
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- Publication type:
- Article
16
Nano-power tunable bump circuit using wide-input-range pseudo-differential transconductor.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 13, p. 921, doi. 10.1049/el.2014.0920
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- Publication type:
- Article
17
Silicon photonics: Graphene benefits.
- Published in:
- Nature Photonics, 2013, v. 7, n. 11, p. 851, doi. 10.1038/nphoton.2013.257
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- Publication type:
- Article
18
Solution‐Processed Silicane Field‐Effect Transistor: Operation Due to Stacking Defects on the Channel.
- Published in:
- Advanced Functional Materials, 2020, v. 30, n. 15, p. 1, doi. 10.1002/adfm.201908746
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- Publication type:
- Article
19
Exploring the Performance Limit of Carbon Nanotube Network Film Field‐Effect Transistors for Digital Integrated Circuit Applications.
- Published in:
- Advanced Functional Materials, 2019, v. 29, n. 16, p. N.PAG, doi. 10.1002/adfm.201808574
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- Publication type:
- Article
20
p‐Doping of Copper(I) Thiocyanate (CuSCN) Hole‐Transport Layers for High‐Performance Transistors and Organic Solar Cells.
- Published in:
- Advanced Functional Materials, 2018, v. 28, n. 31, p. 1, doi. 10.1002/adfm.201802055
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- Publication type:
- Article
21
Unraveling the Main Chain and Side Chain Effects on Thin Film Morphology and Charge Transport in Quinoidal Conjugated Polymers.
- Published in:
- Advanced Functional Materials, 2018, v. 28, n. 31, p. 1, doi. 10.1002/adfm.201801874
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- Publication type:
- Article
22
Solution Processed AlInO/In<sub>2</sub>O<sub>3</sub> Heterostructure Channel Thin Film Transistor with Enhanced Performance.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900550
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- Publication type:
- Article
23
Balanced Performance Enhancements of a‐InGaZnO Thin Film Transistors by Using All‐Amorphous Dielectric Multilayers Sandwiching High‐k CaCu<sub>3</sub>Ti<sub>4</sub>O<sub>12</sub>.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 10, p. N.PAG, doi. 10.1002/aelm.201900322
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- Publication type:
- Article
24
The Motivation for and Challenges to Scaling Down Organic Field‐Effect Transistors.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 7, p. N.PAG, doi. 10.1002/aelm.201900029
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- Publication type:
- Article
25
A genetic algorithm for the optimal design of a multistage amplifier.
- Published in:
- International Journal of Electrical & Computer Engineering (2088-8708), 2020, v. 10, n. 1, p. 129, doi. 10.11591/ijece.v10i1.pp129-138
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- Publication type:
- Article
26
Wpływ zjawisk cieplnych na parametry dynamiczne tranzystora IGBT.
- Published in:
- Przegląd Elektrotechniczny, 2018, v. 94, n. 9, p. 44, doi. 10.15199/48.2018.09.11
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- Publication type:
- Article
27
Ocena przydatności wybranych modeli łącznika diodowo-tranzystorowego do wyznaczania charakterystyk przetwornicy SEPIC.
- Published in:
- Przegląd Elektrotechniczny, 2018, v. 94, n. 9, p. 36, doi. 10.15199/48.2018.09.09
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- Publication type:
- Article
28
Modulation of Electronic States near Electrodes in Graphene Transistors Observed by Operando Photoelectron Nanospectroscopy.
- Published in:
- Sensors & Materials, 2019, v. 31, n. 7, Part 2, p. 2303, doi. 10.18494/SAM.2019.2327
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- Publication type:
- Article
29
Toward the Growth of High Mobility 2D Transition Metal Dichalcogenide Semiconductors.
- Published in:
- Advanced Materials Interfaces, 2019, v. 6, n. 24, p. N.PAG, doi. 10.1002/admi.201900220
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- Publication type:
- Article
30
Marangoni Effect‐Controlled Growth of Oriented Film for High Performance C8‐BTBT Transistors.
- Published in:
- Advanced Materials Interfaces, 2019, v. 6, n. 8, p. N.PAG, doi. 10.1002/admi.201801736
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- Publication type:
- Article
31
Correlation between the Golden Ratio and Nanowire Transistor Performance.
- Published in:
- Applied Sciences (2076-3417), 2018, v. 8, n. 1, p. 54, doi. 10.3390/app8010054
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- Publication type:
- Article
32
Practical Implementation and Analysis of EMI Effects on Transistor as an Amplifier circuit in CE & CB configurations.
- Published in:
- International Journal of Advanced Research in Computer Science, 2017, v. 8, n. 4, p. 440
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- Publication type:
- Article
33
Symmetric Mixed Sulfur–Selenium Fused Ring Systems as Potential Materials for Organic Field‐Effect Transistors.
- Published in:
- Chemistry - A European Journal, 2020, v. 26, n. 13, p. 2869, doi. 10.1002/chem.201903958
- By:
- Publication type:
- Article
34
Super-Threshold FinFET Full Adders for Low-Power and High-Speed Applications.
- Published in:
- Electrotehnica, Electronica, Automatica, 2015, v. 63, n. 1, p. 97
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- Publication type:
- Article
35
BSIM3v3 Characterization and Simulation of MOS Si<sub>1-x</sub>Ge<sub>x</sub> Transistors with 130 nm Submicron Technology.
- Published in:
- Journal of Nano- & Electronic Physics, 2019, v. 11, n. 4, p. 1, doi. 10.21272/jnep.11(4).04021
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- Publication type:
- Article
36
High-density integration of carbon nanotubes via chemical self-assembly.
- Published in:
- Nature Nanotechnology, 2012, v. 7, n. 12, p. 787, doi. 10.1038/nnano.2012.189
- By:
- Publication type:
- Article
37
Investigation of the Performance of Poly(Methyl-Acrylate) as a Gate Dielectric in Organic Thin-Film Transistors.
- Published in:
- Journal of Electronic Materials, 2020, v. 49, n. 6, p. 3830, doi. 10.1007/s11664-020-08090-1
- By:
- Publication type:
- Article
38
Graphene Nanoscroll Geometry Effect on Transistor Performance.
- Published in:
- Journal of Electronic Materials, 2020, v. 49, n. 1, p. 544, doi. 10.1007/s11664-019-07801-7
- By:
- Publication type:
- Article
39
Numerical Study of Sub-10 nm Tunneling Field Effect Transistors Performance Based on Graphene Nanoribbons in Conventional Very Large-Scale Integrated Circuits.
- Published in:
- Journal of Electronic Materials, 2019, v. 48, n. 9, p. 5617, doi. 10.1007/s11664-019-07397-y
- By:
- Publication type:
- Article
40
IMPLEMENTATION OF FINFET BASED 1-BIT FULL ADDER.
- Published in:
- i-Manager's Journal on Electronics Engineering, 2019, v. 9, n. 4, p. 32
- By:
- Publication type:
- Article
41
Transferred wrinkled Al<sub>2</sub>O<sub>3</sub> for highly stretchable and transparent graphene-carbon nanotube transistors.
- Published in:
- Nature Materials, 2013, v. 12, n. 5, p. 403, doi. 10.1038/nmat3572
- By:
- Publication type:
- Article