Works matching Junction transistors

Results: 485

Multifunctional Mixed‐Dimensional MoS2–CuO Junction Field‐Effect Transistor for Logic Operation and Phototransistor.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 3, p. N.PAG, doi. 10.1002/aelm.201800976

By:

Gao, Yu;
Zhuge, Fuwei;
Li, Man;
Li, Liang;
Lv, Liang;
Zhang, Qingfu;
Wang, Fakun;
Su, Jianwei;
Han, Wei;
Liu, Kailang;
Zhai, Tianyou;
He, Yuhui

Publication type:

Article

I-V , C-V and deep level transient spectroscopy study of 24 MeV proton-irradiated bipolar junction transistor.

Published in:

Pramana: Journal of Physics, 2010, v. 74, n. 1, p. 97, doi. 10.1007/s12043-010-0011-1

By:

Madhu, K. V.;
Kulkarni, S. R.;
Damle, R.

Publication type:

Article

Organic Junction Field-Effect Transistor.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 7, p. 1011, doi. 10.1002/adfm.201301417

By:

Lüssem, Björn;
Kleemann, Hans;
Kasemann, Daniel;
Ventsch, Fabian;
Leo, Karl

Publication type:

Article

On frequency response and stability of an optical front-end with variable-gain current amplifier using a bipolar junction transistor translinear loop.

Published in:

International Journal of Circuit Theory & Applications, 2013, v. 41, n. 8, p. 792, doi. 10.1002/cta.817

By:

Tadić, Nikša;
Zogović, Milena;
Gaberl, Wolfgang;
Zimmermann, Horst

Publication type:

Article

Contributions to the Demythisation of the Bipolar Junction Transistor.

Published in:

Romanian Journal of Information Technology & Automatic Control / Revista Română de Informatică și Automatică, 2019, v. 29, n. 2, p. 113, doi. 10.33436/v29i2y201909

By:

NICOLAU, Dragoş

Publication type:

Article

Research on Temperature Characteristics of PN Junction Capacitance of Bipolar Transistor.

Published in:

Railway Signalling & Communication Engineering, 2023, v. 20, n. 8, p. 101, doi. 10.3969/j.issn.1673-4440.2023.08.019

By:

Wen Shulai;
Zhang Lei;
Yu Shuyong;
Lu Jiang

Publication type:

Article

Efficient base driver circuit for silicon carbide bipolar junction transistors.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 25, p. 1450, doi. 10.1049/el.2018.7057

By:

McNeill, N.;
Stark, B.H.;
Finney, S.J.;
Holliday, D.;
Dymond, H.

Publication type:

Article

Temperature‐stable heat pulse driver circuit for low‐voltage single supply soil moisture sensors based on junction transistors.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 3, p. 208, doi. 10.1049/el.2015.3329

By:

Dias, P.C.;
Morais, F.O.;
França, M.B.

Publication type:

Article

InGaZnO Tunnel and Junction Transistors Based on Vertically Stacked Black Phosphorus/InGaZnO Heterojunctions.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000291

By:

Bi, Jiahe;
Zou, Xuming;
Lv, Yawei;
Li, Guoli;
Liu, Xingqiang;
Liu, Yuan;
Yu, Ting;
Yang, Zhenyu;
Liao, Lei

Publication type:

Article

Model Parameters and Degradation Mechanism Analysis of Indium Phosphide Hetero-Junction Bipolar Transistors Exposed to Proton Irradiation.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 10, p. 1831, doi. 10.3390/electronics13101831

By:

Zhao, Xiaohong;
Wang, Hongwei;
Zhang, Yihao;
Chen, You;
Cheng, Siyi;
Wang, Xing;
Peng, Fang;
Yang, Yongjian;
Tang, Guannan;
Bai, Yurong;
Sun, Shaowei

Publication type:

Article

One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 12, p. 2134, doi. 10.3390/electronics9122134

By:

Yoon, Young Jun;
Lee, Jae Sang;
Kim, Dong-Seok;
Lee, Sang Ho;
Kang, In Man

Publication type:

Article

Thermostable Sensor-Converter of Optical Radiation with Frequency Output Based on Single-Junction Transistor Oscillator.

Published in:

Radioelectronics & Communications Systems, 2023, v. 66, n. 11, p. 616, doi. 10.3103/S0735272723110055

By:

Vikulin, I. M.;
Nazarenko, Oleksandr A.

Publication type:

Article

An X-band InGaP/GaAs Hetero-junction Bipolar Transistor Based Microwave Integrated Circuit Differential Voltage Controlled Oscillator for Satellite Communications.

Published in:

IETE Journal of Research, 2010, v. 56, n. 6, p. 340, doi. 10.1080/03772063.2010.10876323

By:

Hee-Young Yoo;
Maharjan, Ram Krishna;
Nam-Young Kim

Publication type:

Article

Method of Parameter Extraction and Experiment for Bipolar Junction Transistor EM Large-signal Model.

Published in:

Research & Exploration in Laboratory, 2014, v. 33, n. 8, p. 62

By:

LIU Hai-tao;
GAN Ping;
HUANG Yang-fan;
WEN Zhi-yu

Publication type:

Article

AC Characteristics of van der Waals Bipolar Junction Transistors Using an MoS 2 /WSe 2 /MoS 2 Heterostructure.

Published in:

Nanomaterials (2079-4991), 2024, v. 14, n. 10, p. 851, doi. 10.3390/nano14100851

By:

Yan, Zezhang;
Xu, Ningsheng;
Deng, Shaozhi

Publication type:

Article

Realization of High Current Gain for Van der Waals MoS 2 /WSe 2 /MoS 2 Bipolar Junction Transistor.

Published in:

Nanomaterials (2079-4991), 2024, v. 14, n. 8, p. 718, doi. 10.3390/nano14080718

By:

Yan, Zezhang;
Xu, Ningsheng;
Deng, Shaozhi

Publication type:

Article

Low-Frequency Noise Characterization and Thermal Stability Analysis of Negative Capacitance Junction-Less Transistors.

Published in:

Integrated Ferroelectrics, 2023, v. 232, n. 1, p. 43, doi. 10.1080/10584587.2023.2173441

By:

Rai, Manish Kumar;
Rai, Sanjeev

Publication type:

Article

An Overview on Bipolar Junction Transistor as a Sensor for X-ray Beams Used in Medical Diagnosis.

Published in:

Sensors (14248220), 2022, v. 22, n. 5, p. N.PAG, doi. 10.3390/s22051923

By:

Santos, Luiz A. P.

Publication type:

Article

Rules for determining the state of a bipolar junction transistor.

Published in:

International Journal of Electrical Engineering Education, 2011, v. 48, n. 1, p. 104, doi. 10.7227/IJEEE.48.1.9

By:

Cassara, Frank A.

Publication type:

Article

TRIPLE-TUNNEL JUNCTION SINGLE ELECTRON TRANSISTOR (TTJ-SET).

Published in:

Modern Physics Letters B, 2011, v. 25, n. 17, p. 1487, doi. 10.1142/S0217984911026346

By:

SHAHHOSEINI, ALI;
SAGHAFI, KAMYAR;
MORAVVEJ-FARSHI, MOHAMMAD KAZEM;
FAEZ, RAHIM

Publication type:

Article

Mixed‐Dimensional MoS2/Ge Heterostructure Junction Field‐Effect Transistors for Logic Operation and Photodetection.

Published in:

Advanced Functional Materials, 2022, v. 32, n. 10, p. 1, doi. 10.1002/adfm.202110181

By:

Wang, Bo;
Wang, Liming;
Zhang, Yichi;
Yang, Maolong;
Lin, Dongdong;
Zhang, Ningning;
Jiang, Zuimin;
Liu, Maliang;
Zhu, Zhangming;
Hu, Huiyong

Publication type:

Article

Junction Field‐Effect Transistors Based on PdSe2/MoS2 Heterostructures for Photodetectors Showing High Responsivity and Detectivity.

Published in:

Advanced Functional Materials, 2021, v. 31, n. 49, p. 1, doi. 10.1002/adfm.202106105

By:

Wang, Haoyun;
Li, Zexin;
Li, Dongyan;
Xu, Xiang;
Chen, Ping;
Pi, Lejing;
Zhou, Xing;
Zhai, Tianyou

Publication type:

Article

Van der Waals Bipolar Junction Transistor Using Vertically Stacked Two‐Dimensional Atomic Crystals.

Published in:

Advanced Functional Materials, 2019, v. 29, n. 17, p. N.PAG, doi. 10.1002/adfm.201807893

By:

Liu, Liwei;
Xu, Ningsheng;
Zhang, Yu;
Zhao, Peng;
Chen, Huanjun;
Deng, Shaozhi

Publication type:

Article

Trench Dual Gate Junction less Field Effect Transistor.

Published in:

Journal of Integrated Circuits & Systems, 2024, v. 19, n. 1, p. 1, doi. 10.29292/jics.v19i1.748

By:

Dhar, Palasri;
Podder, Soumik;
Roy, Sunipa

Publication type:

Article

Development of the Bipolar Junction Transistor Diagnostic Test (BJTDT) to explore the second-year undergraduate Myanmar electronic and Thai electrical engineering students' understanding of BJT working principles and applications.

Published in:

Australasian Journal of Engineering Education, 2024, v. 29, n. 1, p. 66, doi. 10.1080/22054952.2024.2347792

By:

Khin, Myat Noe;
Nopparatjamjomras, Suchai;
Chittaree, Ratchapak;
Nopparatjamjomras, Thasaneeya Ratanaroutai

Publication type:

Article

Bipolar Junction Transistor Exhibiting Excellent Output Characteristics with a Prompt Response against the Selective Protein.

Published in:

Advanced Functional Materials, 2022, v. 32, n. 38, p. 1, doi. 10.1002/adfm.202204781

By:

Dastgeer, Ghulam;
Shahzad, Zafar Muhammad;
Chae, Heeyeop;
Kim, Yong Ho;
Ko, Byung Min;
Eom, Jonghwa

Publication type:

Article

Bipolar Junction Transistors: Van der Waals Bipolar Junction Transistor Using Vertically Stacked Two‐Dimensional Atomic Crystals (Adv. Funct. Mater. 17/2019).

Published in:

Advanced Functional Materials, 2019, v. 29, n. 17, p. N.PAG, doi. 10.1002/adfm.201970113

By:

Liu, Liwei;
Xu, Ningsheng;
Zhang, Yu;
Zhao, Peng;
Chen, Huanjun;
Deng, Shaozhi

Publication type:

Article

Effect of emitter current on the properties of the collector junction in silicon and germanium transistor structures.

Published in:

Inorganic Materials, 2011, v. 47, n. 3, p. 213, doi. 10.1134/S0020168511030095

By:

Jafarova, E.;
Iskenderzade, Z.;
Alieva, L.;
Taptygov, E.

Publication type:

Article

Two‐transistor and two‐magnetic‐tunnel‐junction multi‐level cell structured spin‐transfer torque magnetic random access memory with optimisations on power and reliability.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 1, p. 104, doi. 10.1049/el.2015.2965

By:

Tao, Zihao;
Jia, Ze

Publication type:

Article

Individual SWCNT Transistor with Photosensitive Planar Junction Induced by Two‐Photon Oxidation.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 3, p. 1, doi. 10.1002/aelm.202000872

By:

Emelianov, Aleksei V.;
Nekrasov, Nikita P.;
Moskotin, Maksim V.;
Fedorov, Georgy E.;
Otero, Nerea;
Romero, Pablo M.;
Nevolin, Vladimir K.;
Afinogenov, Boris I.;
Nasibulin, Albert G.;
Bobrinetskiy, Ivan I.

Publication type:

Article

Feasibility of Digital Circuit Design Based on Nanoscale Field-Effect Bipolar Junction Transistor.

Published in:

Journal of Electrical & Computer Engineering Innovations (JECEI), 2023, v. 11, n. 1, p. 33, doi. 10.22061/JECEI.2022.8287.503

By:

Shokri, A.;
Amirmazlaghani, M.

Publication type:

Article

Electronic Sensing Platform (ESP) Based on Open-Gate Junction Field-Effect Transistor (OG-JFET) for Life Science Applications: Design, Modeling and Experimental Results.

Published in:

Sensors (14248220), 2021, v. 21, n. 22, p. 7491, doi. 10.3390/s21227491

By:

Panahi, Abbas;
Sadighbayan, Deniz;
Ghafar-Zadeh, Ebrahim

Publication type:

Article

Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-39705-w

By:

Zhou, Yaoqiang;
Tong, Lei;
Chen, Zefeng;
Tao, Li;
Pang, Yue;
Xu, Jian-Bin

Publication type:

Article

An Intelligent Reliability Assessment technique for Bipolar Junction Transistor using Artificial Intelligence Techniques.

Published in:

Pertanika Journal of Science & Technology, 2018, v. 26, n. 4, p. 1765

By:

Bhargava, Cherry;
Handa, Manisha

Publication type:

Article

Transient processes in high-voltage silicon carbide bipolar-junction transistors.

Published in:

Semiconductors, 2013, v. 47, n. 8, p. 1068, doi. 10.1134/S1063782613080228

By:

Yuferev, V.;
Levinshtein, M.;
Ivanov, P.;
Zhang, Q.;
Agarwal, A.;
Palmour, J.

Publication type:

Article

High Power Analysis of Surrounded Channel Junction Less Field Effect Transistor.

Published in:

Journal of Nano- & Electronic Physics, 2024, v. 16, n. 5, p. 1, doi. 10.21272/jnep.16(5).05004

By:

Das, N.;
Sarma, K. C. D.

Publication type:

Article

Resistance Based Drain Current Model of Surrounded Channel Junction Less Field Effect Transistor.

Published in:

Journal of Nano- & Electronic Physics, 2024, v. 16, n. 4, p. 1, doi. 10.21272/jnep.16(4).04002

By:

Das, N.;
Sarma, K. C. D.

Publication type:

Article

Vertical bipolar junction transistor triggered silicon-controlled rectifier for nanoscale ESD engineering.

Published in:

Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 7, p. 350, doi. 10.1049/el.2019.3864

By:

Feibo Du;
Fei Hou;
Wenqiang Song;
YiChen Xu;
Jizhi Liu;
Zhiwei Liu;
Liou, Juin J.

Publication type:

Article

Vertical bipolar junction transistor triggered silicon‐controlled rectifier for nanoscale ESD engineering.

Published in:

Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 5, p. 350, doi. 10.1049/el.2019.3864

By:

Du, Feibo;
Hou, Fei;
Song, Wenqiang;
Xu, YiChen;
Liu, Jizhi;
Liu, Zhiwei;
Liou, Juin J.

Publication type:

Article

Efficient base driver circuit for silicon carbide bipolar junction transistors.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 25, p. 1450, doi. 10.1049/el.2018.7057

By:

McNeill, N.;
Holliday, D.;
Stark, B. H.;
Dymond, H.;
Finney, S. J.

Publication type:

Article

Process compensated bipolar junction transistor‐based CMOS temperature sensor with a ±1.5°C (3σ) batch‐to‐batch inaccuracy.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 22, p. 1270, doi. 10.1049/el.2018.6447

By:

Sun, Dapeng;
Zhang, Tan‐Tan;
Law, Man‐Kay;
Mak, Pui‐In;
Martins, Rui Paulo

Publication type:

Article

Temperature-stable heat pulse driver circuit for low-voltage single supply soil moisture sensors based on junction transistors.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 3, p. 208, doi. 10.1049/el.2015.3329

By:

Dias, P. C.;
Morais, F. O.;
França, M. B.

Publication type:

Article

晶体管阵列老炼时结温测量方法研究.

Published in:

Electronic Components & Materials, 2017, v. 36, n. 9, p. 26, doi. 10.14106/j.cnki.1001-2028.2017.09.006

By:

吕贤亮;
麻力;
任翔;
孙明

Publication type:

Article

All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 4, p. 1, doi. 10.1002/aelm.202000883

By:

Reinhardt, Anna;
Wenckstern, Holger;
Grundmann, Marius

Publication type:

Article

An approach to decrease dimensions of field-effect transistors without p-n-junctions.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2014, v. 28, n. 27, p. -1, doi. 10.1142/S0217979214501902

By:

Pankratov, E. L.;
Bulaeva, E. A.

Publication type:

Article

Influence of Gate Depletion Layer Width on Radiation Resistance of Silicon Carbide Junction Field-Effect Transistors.

Published in:

Quantum Beam Science (QuBS), 2023, v. 7, n. 4, p. 31, doi. 10.3390/qubs7040031

By:

Takeyama, Akinori;
Makino, Takahiro;
Tanaka, Yasunori;
Kuroki, Shin-Ichiro;
Ohshima, Takeshi

Publication type:

Article

Implementation of Ambipolar Polysilicon Thin-Film Transistors with Nickel Silicide Schottky Junctions by Low-Thermal-Budget Microwave Annealing.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 7, p. 628, doi. 10.3390/nano12040628

By:

Min, Jin-Gi;
Lee, Dong-Hee;
Kim, Yeong-Ung;
Cho, Won-Ju

Publication type:

Article

Implementation of Ambipolar Polysilicon Thin-Film Transistors with Nickel Silicide Schottky Junctions by Low-Thermal-Budget Microwave Annealing.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 4, p. 628, doi. 10.3390/nano12040628

By:

Min, Jin-Gi;
Lee, Dong-Hee;
Kim, Yeong-Ung;
Cho, Won-Ju

Publication type:

Article

A SIMULATION MODEL APPROACH TO ANALYSIS OF HIGH BREAKDOWN VOLTAGE IN NORMALLY-OFF 4H-SiC VERTICAL JUNCTION FIELD EFFECT TRANSISTOR.

Published in:

Journal of Ovonic Research, 2018, v. 14, n. 6, p. 459

By:

KHALID, M.;
KHAN, J. K.;
CHANDIO, A. D.;
GILANI, Z. A.;
KHAN ASGHAR, H. M. N. UL H.;
RIAZ, S.;
NASEEM, S.

Publication type:

Article

Performance Enhancement of MoSe 2 and WSe 2 Based Junction Field Effect Transistors with Gate-All-Around Structure.

Published in:

Crystals (2073-4352), 2024, v. 14, n. 11, p. 984, doi. 10.3390/cryst14110984

By:

Woo, Changlim;
Abderrahmane, Abdelkader;
Jung, Pangum;
Ko, Pilju

Publication type:

Article