Works matching DE "DEPLETION layers (Electronics)"
Results: 19
Modeling of Subthreshold Surface Potential for Short Channel Double Gate Dual Material Double Halo MOSFET.
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- IUP Journal of Electrical & Electronics Engineering, 2014, v. 7, n. 4, p. 19
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- Article
Modeling of Characteristic Parameter for Submicron MOSFET.
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- IUP Journal of Electrical & Electronics Engineering, 2012, v. 5, n. 3, p. 67
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A Field-Effect Transistor That Avoids Pinch-Off.
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- Microwave Journal, 2018, v. 61, n. 10, p. 90
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Effect of depletion layer width on electrical properties of semiconductive thin film gas sensor: a numerical study based on the gradient-distributed oxygen vacancy model.
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- Applied Physics A: Materials Science & Processing, 2016, v. 122, n. 3, p. 1, doi. 10.1007/s00339-016-9675-9
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- Article
ZnO/PS/p-Si heterojunction properties.
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- European Physical Journal - Applied Physics, 2014, v. 66, n. 2, p. 00, doi. 10.1051/epjap/2014130470
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Anomalous Kink Effect in Low-Dimensional Gate-Recessed Fully Depleted SOI MOSFET at Low Temperature.
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- NANO, 2015, v. 10, n. 7, p. 1550093-1, doi. 10.1142/S1793292015500939
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FABRICATION AND CHARACTERIZATION OF <La<sub>2−x</sub>Sr<sub>x</sub>CuO<sub>4</sub>/Nb-SrTiO<sub>3</sub> HETEROJUNCTIONS IN DIFFERENT DOPED REGIMES.
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- Modern Physics Letters B, 2013, v. 27, n. 1, p. 1, doi. 10.1142/S021798491350005X
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NANOSCALE CAPACITANCE AND CAPACITANCE-VOLTAGE CURVES FOR ADVANCED CHARACTERIZATION OF ELECTRICAL PROPERTIES OF SILICON AND GaN STRUCTURES USING SCANNING MICROWAVE IMPEDANCE MICROSCOPY (sMIM).
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- Electronic Device Failure Analysis, 2017, v. 19, n. 4, p. 12, doi. 10.31399/asm.edfa.2017-4.p012
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Anodes for Rechargeable Lithium-Sulfur Batteries.
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- Advanced Energy Materials, 2015, v. 5, n. 16, p. n/a, doi. 10.1002/aenm.201402273
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SILICON-ON-INSULATOR MESFETS AT THE 45NM NODE.
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- International Journal of High Speed Electronics & Systems, 2012, v. 21, n. 1, p. -1, doi. 10.1142/S0129156412500127
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- Article
Polarity Determination of Polarity-Controlled ZnO Films Using Photoresponse Characteristics.
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- Journal of Electronic Materials, 2013, v. 42, n. 4, p. 716, doi. 10.1007/s11664-012-2427-5
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Study on simultaneous detection of CO and H<sub>2</sub> with (Pd, Fe)-modified SnO<sub>2</sub> and Pt-loaded SnO<sub>2</sub> sensors.
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- Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 22, p. 18935, doi. 10.1007/s10854-018-0016-y
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Raman spectroscopy from buried semiconductor interfaces: Structural and electronic properties.
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- Physica Status Solidi (B), 2015, v. 252, n. 1, p. 19, doi. 10.1002/pssb.201350410
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Thermal performance evaluation of direct flow solar water heating system using exergetic approach.
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- Journal of Thermal Analysis & Calorimetry, 2015, v. 121, n. 3, p. 1365, doi. 10.1007/s10973-015-4566-4
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Semiconductor-Based Photoelectrochemical Water Splitting at the Limit of Very Wide Depletion Region.
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- Advanced Functional Materials, 2016, p. 219, doi. 10.1002/adfm.201503692
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On a chaotic potential at the surface of a compensated semiconductor under conditions of the self-assembly of electrically active defects.
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- Semiconductors, 2015, v. 49, n. 9, p. 1187, doi. 10.1134/S1063782615090080
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AC Electrical Conduction of Cr-Doped SrTiO Thin Films with an Oxygen-Deficient Interface Layer.
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- Journal of Electronic Materials, 2017, v. 46, n. 6, p. 3796, doi. 10.1007/s11664-016-5243-5
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Influence of shear rheometer measurement systems on the rheological properties of microfibrillated cellulose (MFC) suspensions.
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- Cellulose, 2018, v. 25, n. 2, p. 961, doi. 10.1007/s10570-017-1642-x
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Electric field and charge density in the plane of a quasi-equilibrium asymmetric 2D p-n junction with zero current.
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- Technical Physics, 2015, v. 60, n. 10, p. 1494, doi. 10.1134/S1063784215100254
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