Works matching IS 03701972 AND DT 2003 AND VI 240 AND IP 2

Results: 43

Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 455, doi. 10.1002/pssb.200303309

By:

J. Torres;
D. Coquillat;
R. Legros;
J. P. Lascaray;
S. Ruffenach;
O. Briot;
R. L. Aulombard;
D. Peyrade;
Y. Chen;
M. Le Vassor d'Yerville;
E. Centeno;
D. Cassagne;
J. P. Albert

Publication type:

Article

Polarization-induced surface band bendings of GaN films studied by synchrotron radiation photoemission spectroscopy.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 451, doi. 10.1002/pssb.200303543

By:

Ho Won Jang;
Kyu Wook Ihm;
Tai-Hee Kang;
Jung-Hee Lee;
Jong-Lam Lee

Publication type:

Article

Thermal conductivity of GaN crystals grown by high pressure method.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 447

By:

A. Jeżowski;
P. Stachowiak;
T. Plackowski;
T. Suski;
S. Krukowski;
M. Boćkowski;
I. Grzegory;
B. Danilchenko;
T. Paszkiewicz

Publication type:

Article

Optimization of the growth of Ga1- xMnxN epilayers using plasma-assisted MBE.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 443, doi. 10.1002/pssb.200303367

By:

S. Kuroda;
E. Bellet-Amalric;
X. Biquard;
J. Cibert;
R. Giraud;
S. Marcet;
H. Mariette

Publication type:

Article

Optical and magnetic properties of the DyN/GaN superlattice.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 440, doi. 10.1002/pssb.200303321

By:

Y. K. Zhou;
M. S. Kim;
N. Teraguchi;
A. Suzuki;
Y. Nanishi;
H. Asahi

Publication type:

Article

Nitrides as spintronic materials.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 433, doi. 10.1002/pssb.200303265

By:

Tomasz Dietl

Publication type:

Article

Effect of AlN buffer layer on the growth of InN epitaxial film on Si substrate.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 429, doi. 10.1002/pssb.200303404

By:

T. Yamaguchi;
Y. Saito;
C. Morioka;
K. Yorozu;
T. Araki;
A. Suzuki;
Y. Nanishi

Publication type:

Article

Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 425, doi. 10.1002/pssb.200303448

By:

V. Yu. Davydov;
A. A. Klochikhin;
V. V. Emtsev;
A. N. Smirnov;
I. N. Goncharuk;
A. V. Sakharov;
D. A. Kurdyukov;
M. V. Baidakova;
V. A. Vekshin;
S. V. Ivanov;
J. Aderhold;
J. Graul;
A. Hashimoto;
A. Yamamoto

Publication type:

Article

Photoluminescence and optical absorption edge for MOVPE-grown InN.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 421, doi. 10.1002/pssb.200303459

By:

K. Sugita;
H. Takatsuka;
A. Hashimoto;
A. Yamamoto

Publication type:

Article

Control of electron density in InN by Si doping and optical properties of Si-doped InN.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 417, doi. 10.1002/pssb.200303349

By:

M. Higashiwaki;
T. Inushima;
T. Matsui

Publication type:

Article

Narrow bandgap group III-nitride alloys.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 412, doi. 10.1002/pssb.200303475

By:

J. Wu;
W. Walukiewicz;
K. M. Yu;
J. W. Ager III;
E. E. Haller;
Hai Lu;
William J. Schaff

Publication type:

Article

Isoelectronic doping of AlGaN alloys.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 408, doi. 10.1002/pssb.200303257

By:

S. V. Novikov;
L. X. Zhao;
I. Harrison;
C. T. Foxon

Publication type:

Article

Characterization of the GaN-rich side of GaNP grown by metal-organic chemical vapor deposition.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 404, doi. 10.1002/pssb.200303297

By:

Yuhzoh Tsuda;
Hirokazu Mouri;
Masahiro Araki;
Yoshihiro Ueta;
Takayuki Yuasa;
Mototaka Taneya

Publication type:

Article

Effects of heavy nitrogen doping in IIIV semiconductors How well does the conventional wisdom holdfor the dilute nitrogen IIIV-N alloys?

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 396, doi. 10.1002/pssb.200303329

By:

Yong Zhang;
B. Fluegel;
M. C. Hanna;
J. F. Geisz;
L.-W. Wang;
A. Mascarenhas

Publication type:

Article

The hot carrier dynamics in InGaN multi-quantum well structure.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 392, doi. 10.1002/pssb.200303256

By:

A. Shikanai;
K. Kojima;
K. Omae;
Y. Kawakami;
Y. Narukawa;
T. Mukai;
Sg. Fujita

Publication type:

Article

Long-lived excitons up to 1 μs in GaN/AlN self-assembled quantum dots.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 388, doi. 10.1002/pssb.200303316

By:

S. Kako;
M. Miyamura;
K. Hoshino

Publication type:

Article

Measurement of optical nonlinearities from intersubband transitions in GaN/AlGaN quantum wells at 1.5 μm.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 384, doi. 10.1002/pssb.200303371

By:

Gang Chen;
R. Rapaport;
O. Mitrofanov;
C. Gmachl;
H. M. Ng

Publication type:

Article

Photoreflectance studiesof N- and Ga-face AlGaN/GaN heterostructures confininga polarisation induced 2DEG.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 380, doi. 10.1002/pssb.200303351

By:

A. T. Winzer;
R. Goldhahn;
C. Buchheim;
O. Ambacher;
A. Link;
M. Stutzmann;
Y. Smorchkova;
U. K. Mishra;
J. S. Speck

Publication type:

Article

Localized biexcitons in AlxGa1-xN ternary alloy epitaxial layers.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 376, doi. 10.1002/pssb.200303455

By:

Y. Yamada;
C. Sasaki;
Y. Ueki;
T. Taguchi;
S. Tanaka;
Y. Nakagawa

Publication type:

Article

Improvement of luminescence capability of Tb3+-related emission by AlxGa1-xN.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 372, doi. 10.1002/pssb.200303479

By:

Y. Nakanishi;
A. Wakahara;
H. Okada;
A. Yoshida;
T. Ohshima;
H. Itoh

Publication type:

Article

Sub-microscopic transient lens spectroscopy of InGaN/GaN quantum wells.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 368, doi. 10.1002/pssb.200303391

By:

Koichi Okamoto;
Shigeo Fujita;
Yoichi Kawakami;
Axel Scherer

Publication type:

Article

Carrier capture times in InGaN/GaN multiple quantum wells.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 364, doi. 10.1002/pssb.200303389

By:

W. H. Fan;
S. M. Olaizola;
T. Wang;
P. J. Parbrook;
J.-P. R. Wells;
D. J. Mowbray;
M. S. Skolnick;
A. M. Fox

Publication type:

Article

Impact of exciton localization on the optical properties of non-polar M-plane In0.1Ga0.9N/GaN multiple quantum wells.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 360, doi. 10.1002/pssb.200303291

By:

Yue Jun Sun;
Oliver Brandt;
Sven Cronenberg;
Holger T. Grahn;
Klaus H. Ploog

Publication type:

Article

Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 356, doi. 10.1002/pssb.200303279

By:

Yasuo Koide;
D. E. Walker;
B. D. White;
L. J. Brillson;
T. Itoh;
R. L. McCreery;
Masanori Murakami;
S. Kamiyama;
H. Amano;
I. Akasaki

Publication type:

Article

Localization characteristics of photoluminescence decay dynamics in an InxGa1-xAs1-yNy/GaAs single quantum well.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 352, doi. 10.1002/pssb.200303260

By:

M. Nakayama;
K. Tokuoka;
K. Nomura;
T. Yamada;
A. Moto;
S. Takagishi

Publication type:

Article

Excitonexciton correlation effects on FWM in GaN.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 348, doi. 10.1002/pssb.200303254

By:

Satoru Adachi;
Hirotaka Sasakura;
Shunichi Muto;
Kouji Hazu;
Takayuki Sota;
Shigefusa F. Chichibu;
Takashi Mukai

Publication type:

Article

Exciton localization in InGaN/GaN single quantum well structures.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 344, doi. 10.1002/pssb.200303338

By:

D. M. Graham;
A. Soltani Vala;
P. Dawson;
M. J. Godfrey;
M. J. Kappers;
T. M. Smeeton;
J. S. Barnard;
C. J. Humphreys;
E. J. Thrush

Publication type:

Article

Recombination dynamics in low-dimensional nitride semiconductors.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 337, doi. 10.1002/pssb.200303427

By:

Y. Kawakami;
A. Kaneta;
K. Omae;
A. Shikanai;
K. Okamoto;
G. Marutsuki;
Y. Narukawa;
T. Mukai;
Sg. Fujita

Publication type:

Article

Shallow donors in GaN.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 330, doi. 10.1002/pssb.200303402

By:

J. A. Freitas;
W. J. Moore;
B. V. Shanabrook;
G. C. B. Braga;
D. D. Koleske;
S. K. Lee;
S. S. Park;
J. Y. Han

Publication type:

Article

The effect of Gallium gallium adsorbate on SiC(0001) surface for GaN by MBE.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 326, doi. 10.1002/pssb.200303283

By:

K. Jeganathan;
M. Shimizu;
T. Ide;
H. Okumura

Publication type:

Article

StranskiKrastanow growth of stacked GaN quantum dots with intense photoluminescence.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 322, doi. 10.1002/pssb.200303426

By:

K. Hoshino;
S. Kako;
Y. Arakawa

Publication type:

Article

Growth of GaN on a-plane sapphire: in-plane epitaxial relationships and lattice parameters.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 318, doi. 10.1002/pssb.200303368

By:

T. Paskova;
V. Darakchieva;
E. Valcheva;
P. P. Paskov;
B. Monemar;
M. Heuken

Publication type:

Article

Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 314, doi. 10.1002/pssb.200303268

By:

J. Brault;
E. Bellet-Amalric;
S. Tanaka;
F. Enjalbert;
D. Le Si Dang;
E. Sarigiannidou;
J.-L. Rouviere;
G. Feuillet;
B. Daudin

Publication type:

Article

The effect of nitrogen on self-assembled GaInNAs quantum dots grown on GaAs.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 310, doi. 10.1002/pssb.200303258

By:

A. Nishikawa;
Y. G. Hong;
C. W. Tu

Publication type:

Article

Characterization of MOVPE-grown GaN layers on GaAs (111)B with a cubic-GaN (111) epitaxial intermediate layer.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 305, doi. 10.1002/pssb.200303463

By:

S. Sanorpim;
E. Takuma;
R. Katayama;
H. Ichinose;
K. Onabe;
Y. Shiraki

Publication type:

Article

Field-compensated quaternary InAlGaN/GaN quantum wells.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 301

By:

F. Kalaïtzakis;
M. Androulidaki;
N. T. Pelekanos;
E. Dimakis;
E. Bellet-Amalric;
D. Jalabert;
D. Cengher;
K. Tsagaraki;
E. Aperathitis;
G. Konstantinidis;
A. Georgakilas

Publication type:

Article

Analysis of InGaN/GaN single quantum wells by X-ray scattering and transmission electron microscopy.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 297, doi. 10.1002/pssb.200303262

By:

T. M. Smeeton;
M. J. Kappers;
J. S. Barnard;
M. E. Vickers;
C. J. Humphreys

Publication type:

Article

Angular dependence of the in-plane polarization anisotropy in the absorption coefficient of strained M-plane GaN films on γ-LiAlO2.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 293, doi. 10.1002/pssb.200303388

By:

Pranob Misra;
Y. J. Sun;
O. Brandt;
H. T. Grahn

Publication type:

Article

Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 289, doi. 10.1002/pssb.200303259

By:

F. Tuomisto;
T. Suski;
H. Teisseyre;
M. Krysko;
M. Leszczynski;
B. Lucznik;
I. Grzegory;
S. Porowski;
D. Wasik;
A. Witowski;
W. Gebicki;
P. Hageman;
K. Saarinen

Publication type:

Article

Structure analysis of ELO-GaN using a 2 × 4 μm2 micro-beam X-ray of an 8-GeV storage ring.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 285, doi. 10.1002/pssb.200303323

By:

T. Miyajima;
M. Takeya;
S. Goto;
S. Tomiya;
S. Takeda;
H. Kurihara;
K. Watanabe;
M. Kato;
N. Hara;
Y. Tsusaka;
J. Matsui

Publication type:

Article

Microstructure and electronic properties of InGaN alloys.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 273, doi. 10.1002/pssb.200303527

By:

F. A. Ponce;
S. Srinivasan;
A. Bell;
L. Geng;
R. Liu;
M. Stevens;
J. Cai;
H. Omiya;
H. Marui;
S. Tanaka

Publication type:

Article

11th International Conference on IIVI Compounds (IIVI 2003), Niagara Falls, USA, 2226 September 2003.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 269, doi. 10.1002/pssb.200301931

By:

J. Gutowski

Publication type:

Article

Nitrides as spintronic materials.

Published in:

Physica Status Solidi (B), 2003, v. 240, n. 2, p. 263, doi. 10.1002/pssb.200390016

By:

Tomasz Dietl

Publication type:

Article