Works matching IS 03701972 AND DT 2003 AND VI 240 AND IP 2
Results: 43
Nitrides as spintronic materials.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 433, doi. 10.1002/pssb.200303265
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Polarization-induced surface band bendings of GaN films studied by synchrotron radiation photoemission spectroscopy.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 451, doi. 10.1002/pssb.200303543
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Thermal conductivity of GaN crystals grown by high pressure method.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 447
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Optimization of the growth of Ga<sub>1- x</sub>Mn<sub>x</sub>N epilayers using plasma-assisted MBE.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 443, doi. 10.1002/pssb.200303367
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Optical and magnetic properties of the DyN/GaN superlattice.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 440, doi. 10.1002/pssb.200303321
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Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 455, doi. 10.1002/pssb.200303309
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Effect of AlN buffer layer on the growth of InN epitaxial film on Si substrate.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 429, doi. 10.1002/pssb.200303404
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Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 425, doi. 10.1002/pssb.200303448
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Photoluminescence and optical absorption edge for MOVPE-grown InN.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 421, doi. 10.1002/pssb.200303459
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Control of electron density in InN by Si doping and optical properties of Si-doped InN.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 417, doi. 10.1002/pssb.200303349
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Narrow bandgap group III-nitride alloys.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 412, doi. 10.1002/pssb.200303475
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Isoelectronic doping of AlGaN alloys.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 408, doi. 10.1002/pssb.200303257
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Characterization of the GaN-rich side of GaNP grown by metal-organic chemical vapor deposition.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 404, doi. 10.1002/pssb.200303297
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Effects of heavy nitrogen doping in IIIV semiconductors How well does the conventional wisdom holdfor the dilute nitrogen IIIV-N alloys?
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 396, doi. 10.1002/pssb.200303329
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The hot carrier dynamics in InGaN multi-quantum well structure.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 392, doi. 10.1002/pssb.200303256
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Long-lived excitons up to 1 μs in GaN/AlN self-assembled quantum dots.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 388, doi. 10.1002/pssb.200303316
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Measurement of optical nonlinearities from intersubband transitions in GaN/AlGaN quantum wells at 1.5 μm.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 384, doi. 10.1002/pssb.200303371
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Photoreflectance studiesof N- and Ga-face AlGaN/GaN heterostructures confininga polarisation induced 2DEG.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 380, doi. 10.1002/pssb.200303351
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Localized biexcitons in Al<sub>x</sub>Ga<sub>1-x</sub>N ternary alloy epitaxial layers.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 376, doi. 10.1002/pssb.200303455
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Improvement of luminescence capability of Tb<sup>3+</sup>-related emission by Al<sub>x</sub>Ga<sub>1-x</sub>N.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 372, doi. 10.1002/pssb.200303479
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Sub-microscopic transient lens spectroscopy of InGaN/GaN quantum wells.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 368, doi. 10.1002/pssb.200303391
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Carrier capture times in InGaN/GaN multiple quantum wells.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 364, doi. 10.1002/pssb.200303389
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Impact of exciton localization on the optical properties of non-polar M-plane In<sub>0.1</sub>Ga<sub>0.9</sub>N/GaN multiple quantum wells.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 360, doi. 10.1002/pssb.200303291
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Influence of oxygen on luminescence and vibrational spectra of Mg-doped GaN.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 356, doi. 10.1002/pssb.200303279
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Localization characteristics of photoluminescence decay dynamics in an In<sub>x</sub>Ga<sub>1-</sub><sub>x</sub>As<sub>1-</sub><sub>y</sub>N<sub>y</sub>/GaAs single quantum well.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 352, doi. 10.1002/pssb.200303260
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Excitonexciton correlation effects on FWM in GaN.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 348, doi. 10.1002/pssb.200303254
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Exciton localization in InGaN/GaN single quantum well structures.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 344, doi. 10.1002/pssb.200303338
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Recombination dynamics in low-dimensional nitride semiconductors.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 337, doi. 10.1002/pssb.200303427
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Shallow donors in GaN.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 330, doi. 10.1002/pssb.200303402
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The effect of Gallium gallium adsorbate on SiC(0001) surface for GaN by MBE.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 326, doi. 10.1002/pssb.200303283
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StranskiKrastanow growth of stacked GaN quantum dots with intense photoluminescence.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 322, doi. 10.1002/pssb.200303426
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Growth of GaN on a-plane sapphire: in-plane epitaxial relationships and lattice parameters.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 318, doi. 10.1002/pssb.200303368
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Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 314, doi. 10.1002/pssb.200303268
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The effect of nitrogen on self-assembled GaInNAs quantum dots grown on GaAs.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 310, doi. 10.1002/pssb.200303258
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Characterization of MOVPE-grown GaN layers on GaAs (111)B with a cubic-GaN (111) epitaxial intermediate layer.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 305, doi. 10.1002/pssb.200303463
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Field-compensated quaternary InAlGaN/GaN quantum wells.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 301
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Analysis of InGaN/GaN single quantum wells by X-ray scattering and transmission electron microscopy.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 297, doi. 10.1002/pssb.200303262
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Angular dependence of the in-plane polarization anisotropy in the absorption coefficient of strained M-plane GaN films on γ-LiAlO<sub>2</sub>.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 293, doi. 10.1002/pssb.200303388
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Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 289, doi. 10.1002/pssb.200303259
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Structure analysis of ELO-GaN using a 2 × 4 μm<sup>2</sup> micro-beam X-ray of an 8-GeV storage ring.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 285, doi. 10.1002/pssb.200303323
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Microstructure and electronic properties of InGaN alloys.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 273, doi. 10.1002/pssb.200303527
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11th International Conference on IIVI Compounds (IIVI 2003), Niagara Falls, USA, 2226 September 2003.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 269, doi. 10.1002/pssb.200301931
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Nitrides as spintronic materials.
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- Physica Status Solidi (B), 2003, v. 240, n. 2, p. 263, doi. 10.1002/pssb.200390016
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- Article