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Polarized Raman spectroscopy and X-ray diffuse scattering in InGaAs/GaAs(100) quantum-dot chains.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 692, doi. 10.1007/s10854-007-9381-7
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- Article
Micro- and Nanostructure of Layered Si\Sn\Si Films, Formed by Vapor Deposition.
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- Journal of Nanomaterials, 2022, p. 1, doi. 10.1155/2022/7910708
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- Article
Using Digital Microphotogrammetry for Morphology Analysis of HPHT-Diamond Single Crystals.
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- Journal of Superhard Materials, 2021, v. 43, n. 6, p. 457, doi. 10.3103/S1063457621060083
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Shear-Induced Metallization on the (001) and (111) Faces of Diamond during Hardness Tests.
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- Journal of Superhard Materials, 2021, v. 43, n. 6, p. 379, doi. 10.3103/S1063457621060034
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- Article
Structure and Properties of WC–Co Composites with Different CrB<sub>2</sub> Concentrations, Sintered by Vacuum Hot Pressing, for Drill Bits.
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- Journal of Superhard Materials, 2021, v. 43, n. 5, p. 344, doi. 10.3103/S1063457621050051
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- Article
Formation of ZnO films on SiC/porous Si/Si substrates.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 2, p. 140, doi. 10.15407/spqeo26.02.140
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The influence of substrate temperature on the structure and optical properties of NiO thin films deposited using the magnetron sputtering in the layer-by-layer growth regime.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 4, p. 398, doi. 10.15407/spqeo26.04.398
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Impact of grain-dependent boron uptake on the nano-electrical and local optical properties of polycrystalline boron doped CVD diamond.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 4, p. 376, doi. 10.15407/spqeo26.04.376
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Redistribution of centers responsible for radiative recombination in SiC/por-SiC and SiC/por-SiC/Er<sub>2</sub>O<sub>3</sub> structures under nonthermal action of microwave radiation.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 4, p. 355, doi. 10.15407/spqeo25.04.355
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Structural, vibrational and photodegradation properties of CuAl<sub>2</sub>O<sub>4</sub> films.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 2, p. 164, doi. 10.15407/spqeo25.02.164
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Growth-sector dependence of morphological, structural and optical features in boron-doped HPHT diamond crystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 3, p. 261, doi. 10.15407/spqeo24.03.261
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Properties of nanosized ZnO:Ho films deposited using explosive evaporation.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 2, p. 139, doi. 10.15407/spqeo24.02.139
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Influence of microwave radiation on relaxation processes in silicon carbide.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2020, v. 23, n. 2, p. 175, doi. 10.15407/spqeo23.02.175
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Mechanical strain in the structure of array of silicon nanowires grown on a silicon substrate.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 3, p. 293, doi. 10.15407/spqeo22.03.293
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Formation of nanocrystals and their properties during tin induced and laser light stimulated crystallization of amorphous silicon.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019, v. 22, n. 2, p. 206, doi. 10.15407/spqeo22.02.206
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Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 2, p. 200, doi. 10.15407/spqeo21.02.200
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Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 4, p. 396, doi. 10.15407/spqeo20.04.396
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Raman study of L-Asparagine and L-Glutamine molecules adsorbed on aluminum films in a wide frequency range.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 3, p. 297, doi. 10.15407/spqeo20.03.297
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Peculiarities of nanocrystalline silicon films growth on porous anodic alumina surface.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 3, p. 330, doi. 10.15407/spqeo20.03.330
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Direct synthesized graphene-like film on SiO<sub>2</sub>: Mechanical and optical properties.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016, v. 19, n. 4, p. 328, doi. 10.15407/spqeo19.04.328
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Self-heating effects in AlGaN/GaN HEMT heterostructures: Electrical and optical characterization.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 396, doi. 10.15407/spqeo18.04.396
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Micro-Raman study of nanocomposite porous films with silver nanoparticles prepared using pulsed laser deposition.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 46
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Vibrational states of hexagonal ZnO doped with Co.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 86
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Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 3, p. 237
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Photoluminescence of As<sub>2</sub>S<sub>3</sub> doped with Cr and Yb.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 4, p. 341
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The growth of weakly coupled graphene sheets from silicon carbide powder.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 3, p. 301
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Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn<sub>1-x</sub>Cd<sub>x</sub>O films grown by dc magnetron sputtering.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 3, p. 275
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Graphene layers fabricated from the Ni/a-SiC bilayer precursor.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 4, p. 322
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Probing plasmonic system by the simultaneous measurement of Raman and fluorescence signals of dye molecules.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 2, p. 195
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Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic, electrical and microstructural studies.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 1, p. 31
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- Article
Microstructural Aspects of Nucleation and Growth of (In,Ga)As-GaAs(001) Islands with Low Indium Content.
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- Journal of Electronic Materials, 2007, v. 36, n. 12, p. 1555, doi. 10.1007/s11664-007-0258-6
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Photoluminescence and Raman scattering in spatially inhomogeneous heteroepitaxial InGaN layers.
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- Journal of Applied Spectroscopy, 2011, v. 78, n. 4, p. 518, doi. 10.1007/s10812-011-9493-y
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Structure and the emission and piezoelectric properties of MOCVD-grown ZnS, ZnS-ZnO, and ZnO films.
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- Technical Physics, 2014, v. 59, n. 1, p. 93, doi. 10.1134/S1063784214010071
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A Facile Electrochemical Method for Graphene Nanoplatelets Preparation Using Multi‐walled Carbon Nanotubes.
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- Fuel Cells, 2019, v. 19, n. 3, p. 202, doi. 10.1002/fuce.201800082
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Configuration Transformations in Polyvinyl Chloride– Methylene Blue Composites.
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- Nanosistemi, Nanomateriali, Nanotehnologii, 2022, v. 20, n. 2, p. 487, doi. 10.15407/nnn.20.02.487
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Nanosized Structure Formation by Trampoline Ion-Plasma Sputtering.
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- Nanosistemi, Nanomateriali, Nanotehnologii, 2020, v. 18, n. 2, p. 357, doi. 10.15407/nnn.18.02.357
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Modern Photoactive Nanocomposites Based on TiO<sub>2 </sub>and CeO<sub>2</sub>.
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- Journal of Nano- & Electronic Physics, 2023, v. 15, n. 4, p. 1, doi. 10.21272/jnep.15(4).04001
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Effect of Deuterium Ion Implantation Dose on Microstructure and Nanomechanical Properties of Silicon.
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- Journal of Nano- & Electronic Physics, 2022, v. 14, n. 1, p. 01001-1, doi. 10.21272/jnep.14(1).01001
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Features of Stress State of Germanium Nanocrystals in SiO<sub>x</sub> Matrix.
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- Journal of Nano- & Electronic Physics, 2015, v. 7, n. 1, p. 01029-1
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Structural and optical properties of ZnO films produced by a nonvacuum chemical technique.
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- Semiconductors, 2014, v. 48, n. 9, p. 1145, doi. 10.1134/S106378261409019X
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Laser-annealing-induced features of the Raman spectra of quartz/Si and glass/Si structures.
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- Semiconductors, 2014, v. 48, n. 5, p. 621, doi. 10.1134/S1063782614050108
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Comparative characteristics of the Raman scattering spectra of graphene films on conductive and semi-insulating 6 H-SiC substrates.
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- Semiconductors, 2013, v. 47, n. 6, p. 812, doi. 10.1134/S1063782613060134
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Transformation of a SiC/por-SiC/TiO structure during rapid thermal annealing.
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- Semiconductors, 2012, v. 46, n. 9, p. 1221, doi. 10.1134/S1063782612090114
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- Article
Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained SiGe buffer layers.
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- Semiconductors, 2012, v. 46, n. 5, p. 647, doi. 10.1134/S1063782612050211
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- Article
Effect of erbium fluoride doping on the photoluminescence of SiO films.
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- Semiconductors, 2012, v. 46, n. 3, p. 323, doi. 10.1134/S1063782612030232
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- Article
The effect of Sn impurity on the optical and structural properties of thin silicon films.
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- Semiconductors, 2011, v. 45, n. 10, p. 1281, doi. 10.1134/S1063782611100253
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- Article
X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure.
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- Semiconductors, 2010, v. 44, n. 9, p. 1199, doi. 10.1134/S1063782610090174
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- Article
Role of Laser Power, Wavelength, and Pulse Duration in Laser Assisted Tin-Induced Crystallization of Amorphous Silicon.
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- Journal of Nanomaterials, 2018, p. 1, doi. 10.1155/2018/1243685
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- Article
Optical-luminescence properties of ZnO and TiO<sub>2</sub> nanopowders obtained by pulsed laser reactive ablation.
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- Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 14, p. 10715, doi. 10.1007/s10854-022-08054-7
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- Article
On the nature of doping effect of methane in ZnO thin films deposited by RF-magnetron sputtering.
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- Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 9, p. 6421, doi. 10.1007/s10854-022-07814-9
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- Article