Works matching IS 10637826 AND DT 1998 AND VI 32 AND IP 7

Results: 27

Use of direct wafer bonding of silicon for fabricating solar cell structures with vertical p-n junctions

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 789, doi. 10.1134/1.1187507

By:

Voronkov, V. B.;
Guk, E.G.;
Kozlov, V. A.;
Shvarts, M. Z.;
Shuman, V. B.

Publication type:

Article

Light absorption in aperiodic PbS/C superlattices in an electric field

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 762, doi. 10.1134/1.1187501

By:

Musikhin, S. F.;
II'in, V. I.;
Rabizo, O. V.;
Bakueva, L. G.;
Sharonova, L. V.

Publication type:

Article

Indium layers in low-temperature gallium arsenide: structure and how it changes under annealing in the temperature range 500-700 °C.

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 683, doi. 10.1134/1.1187483

By:

Bert, N. A.;
Musikhin, Yu. G.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Semyagin, B. R.;
Suvorova, A. A.;
Chaldyshev, V. V.;
Werner, R.

Publication type:

Article

Pulsed investigations of diode structures based on silicon-hydrogen films

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 792, doi. 10.1134/1.1187508

By:

Belov, S. V.;
Lebedev, A. A.

Publication type:

Article

Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 um

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 795, doi. 10.1134/1.1187509

By:

Zhukov, A. E.;
Egoroy, A. Yu.;
Kovsh, A. R.;
Ustinov, V. M.;
Zaitsev, S. V.;
Gordeev, N. Yu.;
Kopchatov, V. I.;
Lunev, A. V.;
Tsatsul'nikov, A. F.;
Volovik, B. V.;
Ledentsov, N. N.;
Kop'ev, P.S.

Publication type:

Article

Allowing for current spreading in semiconductors during measurements of the contact resistivity of ohmic contacts

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 739, doi. 10.1134/1.1187496

By:

Andreev, A. N.;
Rastegaeva, M. G.;
Rastegaev, V. P.;
Reshanov, S. A.

Publication type:

Article

Effect of deposition and annealing conditions on the optical properties of amorphous silicon

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 782, doi. 10.1134/1.1187505

By:

Mashin, A. I.;
Ershov, A. V.;
Khokhlov, D. A.

Publication type:

Article

Temperature dependence of the reverse current in Schottky barrier diodes

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 785, doi. 10.1134/1.1187506

By:

Pipinis, P. A.;
Rimeika, A. K.;
Lapeika, V. A.

Publication type:

Article

Defects and short- and medium-range order in the structural network of hydrogenated amorphous silicon

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 779, doi. 10.1134/1.1187504

By:

Golikova, O. A.;
Kudoyarova, V. Kh.

Publication type:

Article

Growth of InAs quantum dots on vicinal GaAs(001) surfaces misoriented in the [010] direction

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 765, doi. 10.1134/1.1187502

By:

Evtikhiev, V. P.;
Tokranov, V. E.;
Kryzhanovskii, A. K.;
Boiko, A.M.;
Surls, R. A.;
Titkov, A. N.;
Nakamura, A.;
Ichida, M.

Publication type:

Article

Scattering of hot electrons by neutral acceptors in GaAs/AIAs quantum well structures

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 770, doi. 10.1134/1.1187503

By:

Mirlin, D. N.;
Perel, V. I.;
Reshina, I. I.

Publication type:

Article

Modulation of optical absorption of GaAs/AIGaAs quantum wells in a transverse electric field

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 754

By:

Vorob'ev, L. E.;
Zibik, E. A.;
Firsoy, D. A.;
Shalygin, V. A.;
Nashchekina, O. N.;
Saidashev, I. I.

Publication type:

Article

Donor-acceptor recombination in short-period silicon-doped GaAs/AlAs superlattices

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 745, doi. 10.1134/1.1187497

By:

Reshina, I. I.;
Planel, R.

Publication type:

Article

Light absorption and refraction due to intersubband transitions of hot electrons in coupled GaAs/AIGaAs quantum wells

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 757

By:

Vorob'ev, L. E.;
Titkov, I. E.;
Toropov, A. A.;
Tulupenko, V. N.;
Firsov, D. A.;
Shalygin, V. A.;
Shubina, T. V.;
Towe, E.

Publication type:

Article

Theoretical study of the threshold characteristics of InGaN multiquantum well lasers

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 749, doi. 10.1134/1.1187498

By:

Zegrya, G. G.;
Gun'ko, N. A.

Publication type:

Article

Stabilization of the physical properties of Cdx,Hg1-xSe solid solutions doped with iron

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 696, doi. 10.1134/1.1187486

By:

Romanyuk, O. S.;
Paranchich, S. Yu.;
Paranchich, L. D.;
Makogonenko, V. N.

Publication type:

Article

Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 692, doi. 10.1134/1.1187485

By:

Chaldyshev, V. V.;
Kunitsyn, A. E.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Semyagin, B. R.;
Tret'yakov, V. V.;
Faleev, N. N.

Publication type:

Article

Photovoltaic effect in In/I-IIl-V12-thin-film surface-barrier structures

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 736

By:

Rud, V. Yu.;
Rud, Yu. V.;
Bodnar, I. V.;
Gremenok, V. F.;
Obraztsova, O. S.;
Sergeev-Nekrasov, S. L.

Publication type:

Article

Preparation and properties of GeS2 single crystals

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 734, doi. 10.1134/1.1187494

By:

Golubkov, A. V.;
Dubrovskii, G. B.;
Shelykh, A. I.

Publication type:

Article

Computer-simulation investigation of nonlinear transport dynamics in a compensated semiconductor during low-temperature electric breakdown

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 729, doi. 10.1134/1.1187493

By:

Jandieri, K. M.;
Kachlishvili, V. S.

Publication type:

Article

Contribution of light holes to the Hall effect for the complex valence band in germanium and its dependence on doping level

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 720, doi. 10.1134/1.1187492

By:

Alekseenko, M. V.;
Zabrodskii, A. G.;
Shterengas, L. M.

Publication type:

Article

Donorlike behavior of rare-earth impurities in PbTe

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 716, doi. 10.1134/1.1187491

By:

Alekseeva, G. T.;
Vedemikov, M. V.;
Gurieva, E. A.;
Konstantinov, P. P.;
Prokof'eva,, L. V.;
Ravich, Yu. I.

Publication type:

Article

Effect of metal impurities on the drift mobility of charge carriers in glassy chalcogenide semiconductors

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 714, doi. 10.1134/1.1187490

By:

Kazakova, L. P.;
Lebedev, E. A.

Publication type:

Article

Calculation of the energy levels of shallow acceptors in unlaxially strained germanium

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 711, doi. 10.1134/1.1187489

By:

Odnoblyudov, M. A.;
Chistyakov, V. M.

Publication type:

Article

Properties of manganese-doped gallium arsenide layers grown by liquid phase epitaxy from a bismuth melt

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 704, doi. 10.1134/1.1187488

By:

Zhuravlev, K. S.;
Shamirzaev, T. S.;
Yakusheva, N. A.

Publication type:

Article

Phase states and magnetic structure of superconducting lead inclusions in a narrow-gap PbTe semiconducting host

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 700, doi. 10.1134/1.1187487

By:

Darchuk, S. D.;
Dietl, T.;
Korovina, L. A.;
Kolesnik, S.;
Sawicki, M.;
Sizov, F. F.

Publication type:

Article

Features of the electrical compensation of bismuth impurities in PbSe

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 689, doi. 10.1134/1.1187484

By:

Nemov, S. A.;
Gavrikova, T. A.;
Zykov, V. A.;
Osipov, P. A.;
Proshin, V. I.

Publication type:

Article