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- Title
GR-FET application for high-frequency detection device.
- Authors
Mahjoub, Akram M; Nicol, Alec; Abe, Takuto; Ouchi, Takahiro; Iso, Yuhei; Kida, Michio; Aoki, Noboyuki; Miyamoto, Katsuhiko; Omatsu, Takashige; Bird, Jonathan P; Ferry, David K; Ishibashi, Koji; Ochiai, Yuichi
- Abstract
A small forbidden gap matched to low-energy photons (meV) and a quasi-Dirac electron system are both definitive characteristics of bilayer graphene (GR) that has gained it considerable interest in realizing a broadly tunable sensor for application in the microwave region around gigahertz (GHz) and terahertz (THz) regimes. In this work, a systematic study is presented which explores the GHz/THz detection limit of both bilayer and single-layer graphene field-effect transistor (GR-FET) devices. Several major improvements to the wiring setup, insulation architecture, graphite source, and bolometric heating of the GR-FET sensor were made in order to extend microwave photoresponse past previous reports of 40 GHz and to further improve THz detection.
- Publication
Nanoscale research letters, 2013, Vol 8, Issue 1, p22
- ISSN
1931-7573
- Publication type
Journal Article
- DOI
10.1186/1556-276X-8-22