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- Title
In situ-grown hexagonal silicon nanocrystals in silicon carbide-based films.
- Authors
Kim, Tae-Youb; Huh, Chul; Park, Nae-Man; Choi, Cheol-Jong; Suemitsu, Maki
- Abstract
Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasma-enhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. The peak position of the photoluminescence can be controlled within a wavelength of 500 to 650 nm by adjusting the flow rate of the silane gas. We suggest that this phenomenon is attributed to the quantum confinement effect of hexagonal Si-NCs in silicon carbide-based film with a change in the sizes and emission states of the NCs.
- Publication
Nanoscale research letters, 2012, Vol 7, Issue 1, p634
- ISSN
1556-276X
- Publication type
Journal Article
- DOI
10.1186/1556-276X-7-634