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- Title
Effects of an intense, high-frequency laser field on bound states in Ga1 - xInxNyAs1 - y/GaAs double quantum well.
- Authors
Ungan, Fatih; Yesilgul, Unal; Sakiroğlu, Serpil; Kasapoglu, Esin; Erol, Ayse; Arikan, Mehmet Cetin; Sarı, Huseyin; Sökmen, Ismail
- Abstract
Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a GaxIn1 - xNyAs1 - y/GaAs double quantum well for different nitrogen and indium mole concentrations. The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga1 - xInxNyAs1 - y/GaAs double quantum well are investigated as a function of the position and laser-dressing parameter. Our numerical results show that both intense laser field and nitrogen (indium) incorporation into the GaInNAs have strong influences on carrier localization.
- Publication
Nanoscale research letters, 2012, Vol 7, Issue 1, p606
- ISSN
1556-276X
- Publication type
Journal Article
- DOI
10.1186/1556-276X-7-606