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- Title
High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy.
- Authors
Lu, Shulong; Ji, Lian; He, Wei; Dai, Pan; Yang, Hui; Arimochi, Masayuki; Yoshida, Hiroshi; Uchida, Shiro; Ikeda, Masao
- Abstract
We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell.
- Publication
Nanoscale research letters, 2011, Vol 6, Issue 1, p576
- ISSN
1556-276X
- Publication type
Journal Article
- DOI
10.1186/1556-276X-6-576