Works matching DE "INJECTION lasers"

Results: 88

Effect of diffusion and fluctuations in the nonequilibrium charge carrier density on the angular distribution of the output intensity for injection lasers based on an InAsSb/InAsSbP heterostructure.

Published in:

Journal of Applied Spectroscopy, 2011, v. 78, n. 5, p. 733, doi. 10.1007/s10812-011-9525-7

By:

Burov, L.;
Gorbatsevich, A.;
Jadan, M.;
Sherstnev, V.;
Yakovlev, Yu.

Publication type:

Article

Dynamics of polarization switching in single-mode injection semiconductor lasers.

Published in:

Journal of Applied Spectroscopy, 2010, v. 77, n. 1, p. 65, doi. 10.1007/s10812-010-9294-8

By:

Jadan, M.;
Burov, L. I.;
Gorbatsevich, A. S.;
Sokolov, E. S.

Publication type:

Article

Side-Mode-Suppression-Ratio of Injection-Locked Fabry-Perot Lasers.

Published in:

Acta Physica Polonica: A, 2009, v. 116, n. 4, p. 664

By:

Krstić, M. M.;
Gvozdić, D. M.

Publication type:

Article

The Orbitrap mass analyzer with direct ion injection interfaced to a laser desorption/ionization ion source.

Published in:

Journal of Analytical Chemistry, 2013, v. 68, n. 14, p. 1165, doi. 10.1134/S1061934813140062

By:

Makarov, A.;
Grechnikov, A.;
Nikiforov, S.;
Tyutyunnik, O.;
Denisov, E.

Publication type:

Article

Avoiding slush for hot-point drilling of glacier boreholes.

Published in:

Annals of Glaciology, 2021, v. 62, n. 84, p. 166, doi. 10.1017/aog.2020.70

By:

Hills, Benjamin H.;
Winebrenner, Dale P.;
Elam, W. T.;
Kintner, Paul M. S.

Publication type:

Article

Shock assisted ionization injection in laser-plasma accelerators.

Published in:

Scientific Reports, 2015, p. 16310, doi. 10.1038/srep16310

By:

Thaury, C.;
Guillaume, E.;
Lifschitz, A.;
Ta Phuoc, K.;
Hansson, M.;
Grittani, G.;
Gautier, J.;
Goddet, J.-P.;
Tafzi, A.;
Lundh, O.;
Malka, V.

Publication type:

Article

Inauguration of the SwissFEL Injector Test Facility.

Published in:: Journal of Synchrotron Radiation, 2010, v. 17, n. 6, p. 771
Publication type:: Article

Analysis of small-signal intensity modulation of semiconductor lasers taking account of gain suppression.

Published in:

Pramana: Journal of Physics, 2008, v. 70, n. 7, p. 99

By:

Ahmed, Moustafa;
El-Lafi, Ali

Publication type:

Article

Tunable and injection-switchable erbium-doped fiber laser of line structure.

Published in:

Microwave & Optical Technology Letters, 2007, v. 49, n. 4, p. 765, doi. 10.1002/mop.22262

By:

Daru Chen;
Shan Qin;
Zhangwei Yu;
Sailing He

Publication type:

Article

Rate-equation-based circuit model of high-speed semiconductor lasers.

Published in:

Microwave & Optical Technology Letters, 2007, v. 49, n. 3, p. 539, doi. 10.1002/mop.22180

By:

Zhang, S. J.;
Zhu, N. H.;
Pun, E. Y. B.;
Chung, P. S.

Publication type:

Article

Modulation bandwidth of semiconductor lasers based on coupled quantum wells.

Published in:

Microwave & Optical Technology Letters, 2004, v. 42, n. 4, p. 272, doi. 10.1002/mop.20275

By:

Wartak, M. S.;
Weetman, P.

Publication type:

Article

Optical generation of microwave signals using a directly modulated semiconductor laser under modulated light injection.

Published in:

Microwave & Optical Technology Letters, 2001, v. 30, n. 6, p. 369, doi. 10.1002/mop.1316

By:

Seo, Young-Kwang;
Kim, Ajung;
Kim, Jung-Tae;
Choi, Woo-Young

Publication type:

Article

Theoretical studies on a new pattern of laser-driven systems: towards elucidation of direct photo-injection in dye-sensitized solar cells.

Published in:

Theoretical Chemistry Accounts: Theory, Computation, & Modeling, 2011, v. 130, n. 2/3, p. 227, doi. 10.1007/s00214-011-0963-3

By:

Mishima, Kenji;
Segawa, Hiroshi;
Yamashita, Koichi

Publication type:

Article

Spectroscopy and laser cooling on the $${}^{1}S_{0}$$ - $$\,^{3}P_{1}$$ line in Yb via an injection-locked diode laser at 1,111.6 nm.

Published in:

Applied Physics B: Lasers & Optics, 2015, v. 118, n. 4, p. 517, doi. 10.1007/s00340-015-6018-z

By:

Kostylev, N.;
Locke, C.;
Tobar, M.;
McFerran, J.

Publication type:

Article

Raman injection laser.

Published in:

Nature, 2005, v. 433, n. 7028, p. 845, doi. 10.1038/nature03330

By:

Troccoli, Mariano;
Belyanin, Alexey;
Capasso, Federico;
Cubukcu, Ertugrul;
Sivco, Deborah L.;
Cho, Alfred Y.

Publication type:

Article

Interferometric monitoring of single-mode operation of a tunable injection laser.

Published in:

Journal of Applied Spectroscopy, 2006, v. 73, n. 1, p. 130, doi. 10.1007/s10812-006-0047-7

By:

Korostik, K.;
Stetsik, V.

Publication type:

Article

Phase and Amplitude Characteristics of Injection Lasers with Allowance for the Effects of Nonlinear Amplification in Current Modulation.

Published in:

Journal of Applied Spectroscopy, 2004, v. 71, n. 1, p. 73, doi. 10.1023/B:JAPS.0000025351.43584.c9

By:

Matyukhin, A. B.;
Afonenko, A. A.;
Manak, I. S.

Publication type:

Article

Infrared semiconductor lasers for sensing and diagnostics.

Published in:

Applied Physics A: Materials Science & Processing, 2004, v. 78, n. 4, p. 505, doi. 10.1007/s00339-003-2411-2

By:

Wagner, J.;
Mann, Ch.;
Rattunde, M.;
Weimann, G.

Publication type:

Article

Application of microscope thermography in testing temperature distribution in a semiconductor laser.

Published in:

Optica Applicata, 2010, v. 40, n. 3, p. 609

By:

RYBIŃSKI, JANUSZ;
BEDNAREK, MICHAŁ;
WIŚNIEWSKI, PRZEMYSŁAW;
ŚWIETLIK, TOMASZ

Publication type:

Article

TRANSIENT CHARACTERISTICS OF SiGe/Si QW STRUCTURES AT THz LASING.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 279, doi. 10.1142/S0219581X07004729

By:

KAGAN, M. S.;
ALTUKHOV, I. V.;
PAPROTSKIY, S. K.;
SINIS, V. P.;
YASSIEVICH, I. N.;
KOLODZEY, J.

Publication type:

Article

BEHAVIOR OF ELECTRON STATES IN GaAs/AlGaAs DOUBLE QUANTUM WELL STRUCTURE WITH STRONGLY ASYMMETRIC BARRIERS IN AN EXTERNAL ELECTRIC FIELD.

Published in:

International Journal of Nanoscience, 2004, v. 3, n. 1/2, p. 203, doi. 10.1142/S0219581X04001997

By:

Aleshchenko, Yu. A.;
Kapaev, V. V.;
Kopaev, Yu. V.;
Kopev, P. S.;
Ustinov, V. M.;
Zhukov, A. E.

Publication type:

Article

Simulation of Temperature Dependences of Emission Characteristics of Nano-Layer Injection Lasers Based on Symmetric Heterostructures.

Published in:

Russian Physics Journal, 2017, v. 60, n. 3, p. 550, doi. 10.1007/s11182-017-1107-6

By:

Makhsudov, B.;
Dzhuraev, Kh.;
Karimov, Z.

Publication type:

Article

Dynamics and distribution of intensity fluctuations in the modes of an injection laser with strong high-frequency modulation of the pump current.

Published in:

Technical Physics, 1997, v. 42, n. 4, p. 394, doi. 10.1134/1.1258692

By:

Morozov, Yu. A.

Publication type:

Article

Effect of partial spatial coherence of injection-laser radiation on the resolution of an acousto-optical spectrum analyzer.

Published in:

Technical Physics, 1997, v. 42, n. 2, p. 172, doi. 10.1134/1.1258843

By:

Saenko, I. I.;
Bardyshev, A. O.

Publication type:

Article

Three-dimensional energetic and exergetic analysis of the injection orientation of DI diesel engine under different engine speeds.

Published in:

Energy Science & Engineering, 2015, v. 3, n. 4, p. 360, doi. 10.1002/ese3.69

By:

Taghavifar, Hadi;
Khalilarya, Shahram;
Jafarmadar, Samad

Publication type:

Article

Terahertz injection lasers based on PbSnSe alloy with an emission wavelength up to 46.5 μm.

Published in:

Semiconductors, 2016, v. 50, n. 12, p. 1669, doi. 10.1134/S1063782616120125

By:

Maremyanin, K.;
Rumyantsev, V.;
Ikonnikov, A.;
Bovkun, L.;
Chizhevskii, E.;
Zasavitskii, I.;
Gavrilenko, V.

Publication type:

Article

Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling.

Published in:

Semiconductors, 2016, v. 50, n. 10, p. 1362, doi. 10.1134/S1063782616100055

By:

Asryan, L.;
Zubov, F.;
Kryzhanovskaya, N.;
Maximov, M.;
Zhukov, A.

Publication type:

Article

Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells.

Published in:

Semiconductors, 2013, v. 47, n. 11, p. 1513, doi. 10.1134/S1063782613110237

By:

Vinnichenko, M.;
Vorobjev, L.;
Firsov, D.;
Mashko, M.;
Balagula, R.;
Belenky, G.;
Shterengas, L.;
Kipshidze, G.

Publication type:

Article

Features of defect formation during the growth of double heterostructures for injection lasers based on AlGaAsSb/GaSb materials.

Published in:

Semiconductors, 2013, v. 47, n. 8, p. 1110, doi. 10.1134/S1063782613080125

By:

Kuznetsov, G.

Publication type:

Article

Temperature Dependence of the Effective Coefficient of Auger Recombination in 1.3μm InAs/GaAs QD Lasers.

Published in:

Semiconductors, 2005, v. 39, n. 4, p. 481, doi. 10.1134/1.1900267

By:

Novikov, I. I.;
Gordeev, N. Yu.;
Maksimov, M. V.;
Shernyakov, Yu. M.;
Semenova, E. S.;
Vasil'ev, A. P.;
Zhukov, A. E.;
Ustinov, V. M.;
Zegrya, G. G.

Publication type:

Article

Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range.

Published in:

Semiconductors, 2004, v. 38, n. 6, p. 727, doi. 10.1134/1.1766380

By:

Karachinsky, L.Ya.;
Gordeev, N.Yu.;
Novikov, I.I.;
Maximov, M.V.;
Kovsh, A.R.;
Wang, J.S.;
Hsiao, R.S.;
Chi, J.Y.;
Ustinov, V.M.;
Ledentsov, N.N.

Publication type:

Article

Low-Threshold 1.3-μm Injection Lasers Based on Single InGaAsN Quantum Wells.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 607, doi. 10.1134/1.1755901

By:

Odnoblyudov, V. A.;
Egorov, A. Yu;
Kulagina, M. M.;
Maleev, N. A.;
Shernyakov, Yu M.;
Nikitina, E. V.;
Ustinov, V. M.

Publication type:

Article

Nonlinear Generation of Far Infrared Mode in Double-Frequency Heterojunction Lasers.

Published in:

Semiconductors, 2004, v. 38, n. 2, p. 239, doi. 10.1134/1.1648385

By:

Afonenko, A. A.;
Aleshkin, V. Ya.;
Dubinov, A. A.

Publication type:

Article

Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29μm.

Published in:

Semiconductors, 2003, v. 37, n. 10, p. 1239, doi. 10.1134/1.1619525

By:

Novikov, I.I.;
Maksimov, M.V.;
Shernyakov, Yu. M.;
Gordeev, N. Yu.;
Kovsh, A.R.;
Zhukov, A.E.;
Mikhrin, S.S.;
Maleev, N.A.;
Vasil'ev, A.P.;
Ustinov, V.M.;
Alferov, Zh. I.;
Ledentsov, N.N.;
Bimberg, D.

Publication type:

Article

Mid-Infrared (λ = 2.775μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy.

Published in:

Semiconductors, 2003, v. 37, n. 6, p. 736, doi. 10.1134/1.1582546

By:

Ivanov, S. V.;
Moiseev, K. D.;
Kaıgorodov, V. A.;
Solov’ev, V. A.;
Sorokin, S. V.;
Meltser, B. Ya.;
Grebenshchikova, E. A.;
Sedova, I. V.;
Terent’ev, Ya. V.;
Semenov, A. N.;
Astakhova, A. P.;
Mikhaılova, M. P.;
Toropov, A. A.;
Yakovlev, Yu. P.;
Kop’ev, P. S.;
Alferov, Zh. I.

Publication type:

Article

Electroluminescence of Injection Lasers Based on Vertically Coupled Quantum Dots near the Lasing Threshold.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 112, doi. 10.1134/1.1538549

By:

Gordeev, N.Yu.;
Za&iccaron;tsev, S.V.;
Karachinsky, L.Ya.;
Kopchatov, V.I.;
Novikov, I.I.;
Ustinov, V.M.;
Kop'ev, P.S.

Publication type:

Article

Difference Mode Generation in Injection Lasers.

Published in:

Semiconductors, 2001, v. 35, n. 10, p. 1203, doi. 10.1134/1.1410665

By:

Aleshkin, V. Ya.;
Afonenko, A. A.;
Zvonkov, N. B.

Publication type:

Article

The Thermal Cross-Interference Effects in the Arrays of Vertical-Cavity Surface-Emitting Lasers.

Published in:

Semiconductors, 2001, v. 35, n. 4, p. 485, doi. 10.1134/1.1365201

By:

Zakharov, S. M.

Publication type:

Article

Laser Waveguide with a Reverse Gradient of the Refractive Index.

Published in:

Semiconductors, 2000, v. 34, n. 11, p. 1338, doi. 10.1134/1.1325435

By:

Kotel’nikov, E. Yu.;
Kudryashov, I. V.;
Rastegaeva, M. G.;
Katsnel’son, A. A.;
Shkol’nik, A. S.;
Evtikhiev, V. P.

Publication type:

Article

Gain characteristics of quantum-dot injection lasers.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 1013, doi. 10.1134/1.1187828

By:

Zhukov, A. E.;
Kovsh, A. R.;
Ustinov, V. M.;
Egorov, A. Yu.;
Ledentsov, N. N.;
Tsatsul’nikov, A. F.;
Maksimov, M. V.;
Zaıtsev, S. V.;
Shernyakov, Yu. M.;
Lunev, A. V.;
Kop’ev, P. S.;
Alferov, Zh. I.;
Bimberg, D.

Publication type:

Article

Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity.

Published in:

Semiconductors, 1999, v. 33, n. 9, p. 991, doi. 10.1134/1.1187821

By:

Danilova, A. P.;
Danilova, T. N.;
Imenkov, A. N.;
Kolchanova, N. M.;
Stepanov, M. V.;
Sherstnev, V. V.;
Yakovlev, Yu. P.

Publication type:

Article

Radiative recombination rate in quantum-well structures in the model without k-selection.

Published in:

Semiconductors, 1997, v. 31, n. 9, p. 929, doi. 10.1134/1.1187155

By:

Afonenko, A. A.;
Manak, I. S.;
Shevtsov, V. A.;
Kononenko, V. K.

Publication type:

Article

The properties of low-threshold heterolasers with clusters of quantum dots.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 455

By:

Zaıtsev, S. V.;
Gordeev, N. Yu.;
Ustinov, V. M.;
Zhukov, A. E.;
Egorov, A. Yu.;
Maksimov, M. V.;
Tsatsul’nikov, A. F.;
Ledentsov, N. N.;
Kop’ev, P. S.;
Alferov, Zh. I.;
Bimberg, D.

Publication type:

Article

Effect of transverse pump current nonuniformity and field distribution on the dynamical characteristics of strip injection lasers.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 519, doi. 10.1134/1.1187315

By:

Gurevich, S. A.;
Simin, G. S.;
Shatalov, M. S.

Publication type:

Article

Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix.

Published in:

Semiconductors, 1997, v. 31, n. 4, p. 411, doi. 10.1134/1.1187173

By:

Zhukov, A. E.;
Egorov, A. Yu.;
Kovsh, A. R.;
Ustinov, V. M.;
Ledentsov, N. N.;
Maksimov, M. V.;
Tsatsul’nikov, A. F.;
Zaıtsev, S. V.;
Gordeev, N. Yu.;
Kop’ev, P. S.;
Alferov, Zh. I.;
Bimberg, D.

Publication type:

Article

Quantum dot injection heterolaser with ultrahigh thermal stability of the threshold current up to 50 °C.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 124, doi. 10.1134/1.1187093

By:

Maksimov, M. V.;
Gordeev, N. Yu.;
Zaıtsev, S. V.;
Kop’ev, P. S.;
Kochnev, I. V.;
Ledentsov, N. N.;
Lunev, A. V.;
Ruvimov, S. S.;
Sakharov, A. V.;
Tsatsul’nikov, A. F.;
Shernyakov, Yu. M.;
Alferov, Zh. I.;
Bimberg, D.

Publication type:

Article

Numerical approach to field fluctuations and spectral lineshape in InGaAsP laser diodes.

Published in:

International Journal of Numerical Modelling, 2004, v. 17, n. 2, p. 147, doi. 10.1002/jnm.530

By:

Ahmed, Moustafa

Publication type:

Article

Selective Dielectric Removal for Failure Analysis of Thin Films on Semiconductor Devices.

Published in:

Electronic Device Failure Analysis, 2009, v. 11, n. 2, p. 23, doi. 10.31399/asm.edfa.2009-2.p023

By:

Benz, Jason;
Bentley, William;
Myers, Joseph

Publication type:

Article

SHIELDING DESIGN OF THE ITER NBI DUCT FOR NUCLEAR AND BREMSSTRAHLUNG RADIATION.

Published in:

Radiation Protection Dosimetry, 2005, v. 116, n. 1-4, p. 28, doi. 10.1093/rpd/nci195

By:

Sato, S.;
Lida, H.;
Yamauchi, M.;
Nishitani, T.

Publication type:

Article

p-type doping of ZnO films and growth of tenary ZnMgO and ZnCdO: application to light emitting diodes and laser diodes.

Published in:: International Materials Reviews, 2014, v. 59, n. 2, p. 61, doi. 10.1179/1743280413Y.0000000025
Publication type:: Article