Works matching AU Timoshenko, V. Yu.


Results: 70
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    Ion implantation of porous gallium phosphide.

    Published in:
    Semiconductors, 1998, v. 32, n. 8, p. 886, doi. 10.1134/1.1187478
    By:
    • Ushakov, V. V.;
    • Dravin, V. A.;
    • Mel’nik, N. N.;
    • Zavaritskaya, T. V.;
    • Loıko, N. N.;
    • Karavanskiı, V. A.;
    • Konstantinova, E. A.;
    • Timoshenko, V. Yu.
    Publication type:
    Article
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    Radiation hardness of porous silicon.

    Published in:
    Semiconductors, 1997, v. 31, n. 9, p. 966, doi. 10.1134/1.1187143
    By:
    • Ushakov, V. V.;
    • Dravin, V. A.;
    • Mel’nik, N. N.;
    • Karavanskiı, V. A.;
    • Konstantinova, E. A.;
    • Timoshenko, V. Yu.
    Publication type:
    Article
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    Enhanced Raman scattering in grooved silicon matrix.

    Published in:
    Physica Status Solidi (B), 2009, v. 246, n. 1, p. 173, doi. 10.1002/pssb.200844163
    By:
    • Mamichev, D. A.;
    • Timoshenko, V. Yu.;
    • Zoteyev, A. V.;
    • Golovan, L. A.;
    • Krutkova, E. Yu.;
    • Laktyunkin, A. V.;
    • Kashkarov, P. K.;
    • Astrova, E. V.;
    • Perova, T. S.
    Publication type:
    Article
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