Title

The nature of white luminescence in SiO<sub>2</sub>:C layers.

Authors

Vasin, A. V.; Kushnirenko, V. I.; Lysenko, V. S. L.; Nazarov, A. N.; Ishikawa, Yukari; Salonen, J.

Abstract

Silicon oxide layers containing incorporated carbon (SiO2:C) have been obtained by sequential thermal carbonization/oxidation of porous silicon. The as-synthesized SiO2:C layers exhibit intense white photoluminescence (PL). The characteristics of excitation, emission, and relaxation of the white luminescence in the SiO2:C layers have been studied. It is established that the observed broad PL band in fact consists of at least two subbands with the maxima of intensity in the green and blue spectral regions. Based on the experimental data, a model of the PL excitation and radiative recombination in SiO2:C layers is proposed and justified.

Subjects

SILICON oxide; CARBONIZATION; PHOTOLUMINESCENCE; LUMINESCENCE; OXIDATION; SILICON

Publication

Technical Physics Letters, 2009, Vol 35, Issue 6, p559

ISSN

1063-7850

Publication type

Academic Journal

DOI

10.1134/S1063785009060224