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Title: The nature of white luminescence in SiO<sub>2</sub>:C layers.
Authors: Vasin, A. V.; Kushnirenko, V. I.; Lysenko, V. S. L.; Nazarov, A. N.; Ishikawa, Yukari; Salonen, J.
Abstract: Silicon oxide layers containing incorporated carbon (SiO2:C) have been obtained by sequential thermal carbonization/oxidation of porous silicon. The as-synthesized SiO2:C layers exhibit intense white photoluminescence (PL). The characteristics of excitation, emission, and relaxation of the white luminescence in the SiO2:C layers have been studied. It is established that the observed broad PL band in fact consists of at least two subbands with the maxima of intensity in the green and blue spectral regions. Based on the experimental data, a model of the PL excitation and radiative recombination in SiO2:C layers is proposed and justified.
Subjects: SILICON oxide; CARBONIZATION; PHOTOLUMINESCENCE; LUMINESCENCE; OXIDATION; SILICON
Publication: Technical Physics Letters, 2009, Vol 35, Issue 6, p559
ISSN: 1063-7850
Publication type: Academic Journal
DOI: 10.1134/S1063785009060224

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The nature of white luminescence in SiO<sub>2</sub>:C layers.