Dislocation generation in heat-treated nitrogen-doped silicon wafers when applying external loads.

Mezhennyi, M.; Mil’vidskii, M.; Reznik, V.

The features of generation and motion of dislocations in nitrogen-doped dislocation-free silicon wafers after their multistage thermal treatments are investigated. It is established that doping with nitrogen leads to a substantial increase in stresses of the onset of plastic deformation from the external and internal heterogeneous sources in heat-treated wafers. The motion velocity of dislocations in nitrogen-doped silicon wafers is lower than in undoped wafers. The strengthening effect of nitrogen is apparently caused by its activating effect on the decomposition process of a supersaturated solid solution of oxygen during heat treatment.

Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2009, Vol 3, Issue 5, p747

1027-4510

Academic Journal

10.1134/S1027451009050140