We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Observation of the spin Hall effect in semiconductors.
- Authors
Kato, Y K; Myers, R C; Gossard, A C; Awschalom, D D
- Abstract
Electrically induced electron-spin polarization near the edges of a semiconductor channel was detected and imaged with the use of Kerr rotation microscopy. The polarization is out-of-plane and has opposite sign for the two edges, consistent with the predictions of the spin Hall effect. Measurements of unstrained gallium arsenide and strained indium gallium arsenide samples reveal that strain modifies spin accumulation at zero magnetic field. A weak dependence on crystal orientation for the strained samples suggests that the mechanism is the extrinsic spin Hall effect.
- Publication
Science (New York, N.Y.), 2004, Vol 306, Issue 5703, p1910
- ISSN
1095-9203
- Publication type
Journal Article
- DOI
10.1126/science.1105514