Thickness Dependence of Ferroelectric Properties for Ferroelectric Random Access Memory Based on Poly(vinylidene fluoride-trifluoroethylene) Ultrathin Films. | EBSCOhost

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Title: Thickness Dependence of Ferroelectric Properties for Ferroelectric Random Access Memory Based on Poly(vinylidene fluoride-trifluoroethylene) Ultrathin Films.
Authors: Du, Xiaoli; Zhao, Manping; Chen, Guanglong; Zhang, Xiuli
Publication: Ferroelectrics, 2015, Vol 488, Issue 1, p148
ISSN: 0015-0193
Publication type: Academic Journal
DOI: 10.1080/00150193.2015.1073092