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- Title
Electronic structure origins of polarity-dependent high-TC ferromagnetism in oxide-diluted magnetic semiconductors.
- Authors
Kittilstved, Kevin R; Liu, William K; Gamelin, Daniel R
- Abstract
Future spintronics technologies based on diluted magnetic semiconductors (DMSs) will rely heavily on a sound understanding of the microscopic origins of ferromagnetism in such materials. Discoveries of room-temperature ferromagnetism in wide-bandgap DMSs hold great promise, but this ferromagnetism remains poorly understood. Here we demonstrate a close link between the electronic structures and polarity-dependent high-TC ferromagnetism of TM(2+):ZnO DMSs, where TM(2+) denotes 3d transition metal ions. Trends in ferromagnetism across the 3d series of TM(2+):ZnO DMSs predicted from the energies of donor- and acceptor-type excited states reproduce experimental trends well. These results provide a unified basis for understanding both n- and p-type ferromagnetic oxide DMSs.
- Publication
Nature materials, 2006, Vol 5, Issue 4, p291
- ISSN
1476-1122
- Publication type
Journal Article
- DOI
10.1038/nmat1616