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- Title
An efficient room-temperature silicon-based light-emitting diode.
- Authors
Wai Lek Ng; Lourenco, M.A.; Gwilliam, R.M.; Ledain, S.; G. Shao; Homewood, K.P.
- Abstract
Describes the fabrication of a silicon light-emitting diode (LED) that operates efficiently at room temperature. Use of boron both as a dopant to form a p-n junction, and as a means of introducing dislocation loops which create a local strain field; Resulting band structure and spatial confinement of charge carriers, the latter of which allows electroluminescence at the band-edge; Compatability of this technique with silicon-based ultra-large-scale integration (ULSI) technology.
- Publication
Nature, 2001, Vol 410, Issue 6825, p192
- ISSN
0028-0836
- Publication type
Academic Journal
- DOI
10.1038/35065571