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- Title
Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111).
- Authors
Perova, T S; Wasyluk, J; Kukushkin, S A; Osipov, A V; Feoktistov, N A; Grudinkin, S A
- Abstract
A series of 3C-SiC films have been grown by a novel method of solid-gas phase epitaxy and studied by Raman scattering and scanning electron microscopy (SEM). It is shown that during the epitaxial growth in an atmosphere of CO, 3C-SiC films of high crystalline quality, with a thickness of 20 nm up to few hundreds nanometers can be formed on a (111) Si wafer, with a simultaneous growth of voids in the silicon substrate under the SiC film. The presence of these voids has been confirmed by SEM and micro-Raman line-mapping experiments. A significant enhancement of the Raman signal was observed in SiC films grown above the voids, and the mechanisms responsible for this enhancement are discussed.
- Publication
Nanoscale research letters, 2010, Vol 5, Issue 9, p1507
- ISSN
1931-7573
- Publication type
Journal Article
- DOI
10.1007/s11671-010-9670-6