Title

Influence of seed layer orientation on the growth and physical properties of SnS nanostructures.

Authors

Reddy, N.; Devika, M.; Gunasekhar, K.

Abstract

Stoichiometric tin (II) sulfide (SnS) nanostructures were synthesized on SnS(010)/glass substrates using a simple and low-temperature chemical solution method, and their physical properties were investigated. The as-synthesized SnS nanostructures exhibited orthorhombic crystal structure and most of the nanocrystals are preferentially oriented along the direction. These nanostructures showed p-type electrical conductivity and high electrical resistivity of 93 Ωcm. SnS nanostructures exhibited a direct optical band gap of 1.43 eV. While increasing the surrounding temperature from 20 to 150 °C, the electrical resistivity of the structures decreased and exhibited the activation energy of 0.28 eV.

Subjects

CRYSTAL growth; PROPERTIES of matter; TIN compounds; NANOSTRUCTURES; STOICHIOMETRY; METALLIC glasses synthesis; NANOCRYSTALS

Publication

Applied Physics A: Materials Science & Processing, 2014, Vol 116, Issue 3, p1193

ISSN

0947-8396

Publication type

Academic Journal

DOI

10.1007/s00339-013-8204-3