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- Title
Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature.
- Authors
Pattanasattayavong, Pichaya; Yaacobi-Gross, Nir; Zhao, Kui; Ndjawa, Guy Olivier Ngongang; Li, Jinhua; Yan, Feng; O'Regan, Brian C; Amassian, Aram; Anthopoulos, Thomas D
- Abstract
The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm(2) V(-1) s(-1) . By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated.
- Publication
Advanced materials (Deerfield Beach, Fla.), 2013, Vol 25, Issue 10, p1504
- ISSN
1521-4095
- Publication type
Journal Article
- DOI
10.1002/adma.201202758