Works matching DE "TRANSISTORS"

Results: 4813

Accuracy Improvement of the Large-Signal Model of a High-Power GaN HEMT using Power-Dependent Constant and Tapered Thermal Resistance Methods.

Published in:

Journal of Electromagnetic Engineering & Science, 2025, v. 25, n. 3, p. 241, doi. 10.26866/jees.2025.3.r.294

By:

Ho-Sang Kwon;
Dong-Wook Kim

Publication type:

Article

Ion-Induced Charge and Single-Event Burnout in Silicon Power UMOSFETs.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 11, p. 2288, doi. 10.3390/electronics14112288

By:

Alberton, Saulo G.;
Aguiar, Vitor A. P.;
Added, Nemitala;
Vilas-Bôas, Alexis C.;
Guazzelli, Marcilei A.;
Wyss, Jeffery;
Silvestrin, Luca;
Mattiazzo, Serena;
Pereira, Matheus S.;
Finco, Saulo;
Paccagnella, Alessandro;
Medina, Nilberto H.

Publication type:

Article

A Remote Temperature-Sensing Chip Adaptive to Parasitic and Discrete Transistors with an Inaccuracy of ±0.25 °C from −55 °C to 125 °C.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 11, p. 2161, doi. 10.3390/electronics14112161

By:

Wei, Linfeng;
Li, Wenchang;
Liu, Jian;
Zhang, Tianyi

Publication type:

Article

DESIGN OF POWER EFFICIENT DYNAMIC CONTROLLED COMPARATOR WITH REDUCED KICKBACK NOISE.

Published in:

i-Manager's Journal on Electronics Engineering, 2025, v. 15, n. 3, p. 12, doi. 10.26634/jele.15.3.21765

By:

S., REENU JANE;
SARANIYA O.

Publication type:

Article

Double-gate metal–oxide TFT pixel circuit for improved luminance uniformity of mobile OLED display.

Published in:

Journal of Information Display, 2025, v. 26, n. 2, p. 177, doi. 10.1080/15980316.2024.2424177

By:

You, YiKyoung;
Moon, Kook Chul;
Kim, HyeongMin;
Oh, JungSuk;
Lee, SangWoon;
Lim, Jun Hyung;
Son, Kyoung Seok;
Cho, JaeHyung;
Park, KeeChan

Publication type:

Article

Novel electrical characteristic measurement system of semiconductor films for estimating device characteristics.

Published in:

Journal of Information Display, 2025, v. 26, n. 2, p. 167, doi. 10.1080/15980316.2024.2417923

By:

Moon, Kook Chul;
Im, Hwarim;
Yun, Gyohyeok;
Kim, Hyoungsik;
Na, JungUn;
Kim, Changhwan;
Kim, Yong-Sang

Publication type:

Article

Recent Advances in Polymer Gate Dielectrics for Organic Thin‐Film Transistors.

Published in:

Macromolecular Chemistry & Physics, 2025, v. 226, n. 11, p. 1, doi. 10.1002/macp.202400540

By:

Li, Lu;
Liu, Shaoxiong;
Wang, Kaifeng;
Wu, Bo;
Zhang, Shiming

Publication type:

Article

平台式无人机强耦合无线电能传输方法.

Published in:

Southern Energy Construction, 2025, v. 12, n. 2, p. 158, doi. 10.16516/j.ceec.2024-281

By:

赵航;
贾静;
杨哲;
张力月;
杨磊;
陈团

Publication type:

Article

Recent Advances in Modelling of Nanoscale Electronic Devices and Their Applications.

Published in:

Integrated Ferroelectrics, 2025, v. 241, n. 1-3, p. 147, doi. 10.1080/10584587.2025.2482420

By:

Shah, Khurshed A.;
Parvaiz, M. Shunaid

Publication type:

Article

Frequency Compensation of Three-Stage Amplifier with Self-Cascode Structure and DTMOS Transistor with Active LHP Zero Circuit.

Published in:

Journal of Circuits, Systems & Computers, 2025, v. 34, n. 10, p. 1, doi. 10.1142/S0218126625502263

By:

Gupta, Om Krishna;
Pandey, Neeta;
Gupta, Maneesha

Publication type:

Article

Programmable Optically Variable Resistors: Automating the Design and Measurement of Transistor Biasing Circuits.

Published in:

Journal of Circuits, Systems & Computers, 2025, v. 34, n. 10, p. 1, doi. 10.1142/S0218126625502196

By:

Ray, S.;
Acharyya, A.;
Sarkar, A.;
Das, P.;
Das, R.;
Halder, T.;
Maji, A.;
Chowdhury, S. B. R.;
Hossain, S. R.;
Gain, A.;
Mondal, S. S.;
Mondal, S.;
Adhikari, S. K.

Publication type:

Article

一种新型低开销抗三节点翻转的锁存器设计.

Published in:

Computer Engineering & Science / Jisuanji Gongcheng yu Kexue, 2025, v. 47, n. 5, p. 811, doi. 10.3969/j.issn.1007-130X.2025.05.005

By:

徐辉;
唐琳;
马瑞君;
梁华国;
黄正峰

Publication type:

Article

Polythiophenes for High‐Performance N‐type Organic Electrochemical Transistors.

Published in:

Advanced Functional Materials, 2025, v. 35, n. 23, p. 1, doi. 10.1002/adfm.202419706

By:

Zhang, Chan;
Zheng, Yuting;
Li, Yanru;
Xue, Zhongyuan;
Zhu, Xiuyuan;
Chen, Jiawei;
Ma, Jianeng;
Zhang, Zhi;
Zhong, Hongliang;
Yue, Wan;
Lei, Ting;
Fei, Zhuping

Publication type:

Article

High‐Mobility p‐Channel Thin‐Film Transistors Based on Polycrystalline GeSn (Adv. Electron. Mater. 8/2025).

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202570025

By:

Moto, Kenta;
Maeda, Shintaro;
Igura, Kota;
Huang, Linyu;
Morimoto, Atsuki;
Yamamoto, Keisuke;
Toko, Kaoru

Publication type:

Article

Monolithic 3D Logic Gates Based on p‐Te and n‐Bi2S3 Complementary Thin‐Film Transistors.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400786

By:

Ran, Yuqia;
Song, Yiwen;
Li, Long;
Song, Xujin;
Gu, Pingfan;
Wang, Qi;
Du, Haifeng;
Kang, Jinfeng;
Ye, Yu

Publication type:

Article

Extreme Enhancement‐Mode Operation Accumulation Channel Hydrogen‐Terminated Diamond FETs with Vth < −6 V and High on‐Current.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400770

By:

Qu, Chunlin;
Maini, Isha;
Guo, Qing;
Stacey, Alastair;
Moran, David A. J.

Publication type:

Article

Pulse Dynamics in Reduced Graphene Oxide Electrolyte‐Gated Transistors: Charge Memory Effects and Mechanisms Governing the Ion‐To‐Electron Transduction.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400791

By:

Selmi, Guilherme Segolin;
Lourenço Neto, Eduardo Rodrigues;
Lelis, Gabrielle Coelho;
Okazaki, Anderson Kenji;
Riul, Antonio;
Braunger, Maria Luisa;
de Oliveira, Rafael Furlan

Publication type:

Article

Multistep Fabrication of OECTs via Direct Ink Writing, With Performance Analysis Based on a Novel Measurement Protocol.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 8, p. 1, doi. 10.1002/aelm.202400742

By:

Ghafari, Amir Mohammad;
Backman, Oskar;
Rosqvist, Emil;
Xu, Chunlin;
Torsi, Luisa;
Macchia, Eleonora;
Österbacka, Ronald

Publication type:

Article

Numerical Simulation on Sensitivity Modulation in Nanowire MOSFEB Detector for Biomedical Applications.

Published in:

Indian Journal of Pure & Applied Physics, 2025, v. 63, n. 4, p. 281, doi. 10.56042/ijpap.v63i4.14388

By:

Das, Amit;
Bhardwaj, Anjana;
Das, Kaushik;
Yadav, Shivani;
Kaul, Aapurva;
Goyal, Preeti;
Sharma, Swati;
Rewari, Sonam;
Kanaujia, Binod Kumar;
Gupta, R. S.

Publication type:

Article

Losses and Efficiency Evaluation of the Shunt Active Filter for Renewable Energy Generation.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 10, p. 1972, doi. 10.3390/electronics14101972

By:

Voldoire, Adrien;
Phulpin, Tanguy;
Alali, Mohamad Alaa Eddin

Publication type:

Article

Insight into Optimally Noise- and Signal-Matched Three-Stage LNAs and Effect of Inter-Stage Mismatch.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 10, p. 1967, doi. 10.3390/electronics14101967

By:

Abdalrahman, Fida;
Longhi, Patrick E.;
Colangeli, Sergio;
Ciccognani, Walter;
Serino, Antonio;
Limiti, Ernesto

Publication type:

Article

Recent Progress in Organic Optoelectronic Synaptic Devices.

Published in:

Photonics, 2025, v. 12, n. 5, p. 435, doi. 10.3390/photonics12050435

By:

He, Min;
Tang, Xin

Publication type:

Article

A Wideband and High-Power RF Switching Design.

Published in:

Sensors (14248220), 2025, v. 25, n. 10, p. 3209, doi. 10.3390/s25103209

By:

Huang, Xindong;
Chen, Chengying;
Zhou, Shaokang

Publication type:

Article

Design and Realization of a High-Q Grounded Tunable Active Inductor for 5G NR (FR1) Transceiver Front-End Applications.

Published in:

Sensors (14248220), 2025, v. 25, n. 10, p. 3070, doi. 10.3390/s25103070

By:

Saad, Sehmi;
Ben Hammadi, Aymen;
Haddad, Fayrouz

Publication type:

Article

Two-dimensional ferroelectric α-In2Se3 channel transistors and their synaptic properties.

Published in:

Acta Scientiarum Naturalium Universitatis Sunyatseni / Zhongshan Daxue Xuebao, 2025, v. 64, n. 3, p. 103, doi. 10.13471/j.cnki.acta.snus.ZR20250041

By:

HU Chen;
PENG Songang

Publication type:

Article

Ka 대역 위성통신용 4 W GaN HEMT 고효율 전력증폭기MMIC 설계.

Published in:

Journal of Korean Institute of Electromagnetic Engineering & Science / Han-Guk Jeonjapa Hakoe Nonmunji, 2025, v. 36, n. 4, p. 374, doi. 10.5515/KJKIEES.2025.36.4.374

By:

임서균;
빈수현;
안민석;
문규현;
양영구

Publication type:

Article

Photonic–Electronic Modulated a-IGZO Synaptic Transistor with High Linearity Conductance Modulation and Energy-Efficient Multimodal Learning.

Published in:

Micromachines, 2025, v. 16, n. 5, p. 517, doi. 10.3390/mi16050517

By:

Hou, Zhidong;
Shen, Jinrong;
Zhong, Yiming;
Wu, Dongping

Publication type:

Article

Perception and Recognition of Proximity and Contact Processes via Parallel Double‐Transistor Configuration.

Published in:

Advanced Functional Materials, 2025, v. 35, n. 22, p. 1, doi. 10.1002/adfm.202422733

By:

Liu, Shixin;
Xu, Jiawei;
Zeng, Wanyu;
Qin, Anthon;
Zhao, Wandi;
Liu, Duanyang;
Zhang, Qun;
Zhu, Guodong

Publication type:

Article

Aptamer-Based Planar Electric Double-Layer Field-Effect Transistor: A Novel Approach for Sensitive Troponin I Sensing.

Published in:

Biosensors (2079-6374), 2025, v. 15, n. 5, p. 285, doi. 10.3390/bios15050285

By:

Hung, Sheng-Chun;
Lee, Yi-Hua

Publication type:

Article

The conceptual design of the high-efficiency 400 kW solid-state power station at 352 MHz for the European spallation source.

Published in:

International Journal of Microwave & Wireless Technologies, 2024, v. 16, n. 10, p. 1678, doi. 10.1017/S1759078724000175

By:

Mohadeskasaei, Seyed Alireza;
Dancila, Dragos

Publication type:

Article

Transistor performance: the impact of implant doping accuracy.

Published in:

Solid State Technology, 2001, v. 44, n. 1, p. 88

By:

Adibi, Babak;
Meniailenkov, Viktor

Publication type:

Article

Role of doping accuracy for sub-0.13um technology.

Published in:

Solid State Technology, 2001, v. 44, n. 1, p. 68

By:

Adibi, Babak

Publication type:

Article

SOI conference touts novel devices, 3D structures.

Published in:

Solid State Technology, 2000, v. 43, n. 12, p. 36

By:

Lunday, Christine

Publication type:

Article

Chromeless phase-shift masks used for sub-100nm SOI CMOS transistors.

Published in:

Solid State Technology, 2000, v. 43, n. 7, p. 116

By:

Fritze, Michael;
Astolfi, David K.;
Yost, Donna-Ruth W.;
Wyatt, Peter W.;
Liu, Hua-Yu

Publication type:

Article

Powerful simulation yields perovskite transistors.

Published in:

Solid State Technology, 2000, v. 43, n. 3, p. 22

By:

Burggraaf, Pieter

Publication type:

Article

IBM's vertical transistor.

Published in:

Solid State Technology, 2000, v. 43, n. 2, p. 18

By:

Burggraaf, Pieter "Pete"

Publication type:

Article

Renewed attention, funding needed for device scaling issues.

Published in:

Solid State Technology, 1998, v. 41, n. 3, p. 85

By:

Derbyshire, Katherine

Publication type:

Article

SIA forecast dinner.

Published in:

Solid State Technology, 1998, v. 41, n. 2, p. 20

By:

E.K.

Publication type:

Article

Proposal and Analysis of a High Read and Write Noise Margin 6T-SRAM Cell Using Novel Core Insulator Double-Gate (CIDG) MOSFETs.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 12, p. 8087, doi. 10.1007/s11664-024-11490-2

By:

Jaiswal, Sushmita;
Gupta, Santosh Kumar

Publication type:

Article

Synergistic m_GDI-Based ALU Design Using CMOS and VTEAM Memristor Model for Low-Power High-Speed Applications.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3626, doi. 10.1007/s11664-024-11125-6

By:

Hussain, Syed Ali;
Prasad V, P N S B S V;
Sanki, Pradyut Kumar

Publication type:

Article

Performance Improvement of a-In-Ga-Sn-O Thin-Film Transistor with Oxygen Doping by Reactive Sputtering Method.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 6, p. 3063, doi. 10.1007/s11664-024-11035-7

By:

Liao, Tsung-I;
Chang, Sheng-Po;
Shi, Wen-Xiang;
Chang, Shoou-Jinn;
Chen, Jone-Fang

Publication type:

Article

The big screen [chip testing].

Published in:

Electronics Systems & Software, 2006, v. 4, n. 4, p. 6, doi. 10.1049/ess:20060401

By:

Edwards, C.

Publication type:

Article

News.

Published in:: Electronics Systems & Software, 2006, v. 4, n. 1, p. 4, doi. 10.1049/ess:20060109
Publication type:: Article

Silicon on the rack.

Published in:

Electronics Systems & Software, 2006, v. 4, n. 2, p. 40, doi. 10.1049/ess:20060207

By:

Edwards, Chris

Publication type:

Article

The RACE to find what's next.

Published in:

Electronics Systems & Software, 2005, v. 3, n. 6, p. 42, doi. 10.1049/ess:20050607

By:

Collins, Luke

Publication type:

Article

Taking corners at SPEED.

Published in:

Electronics Systems & Software, 2005, v. 3, n. 6, p. 26

By:

Rubero, Jason;
Thurgood, Jonathan

Publication type:

Article

Growth of Long Triisopropylsilylethynyl Pentacene (TIPS-PEN) Nanofibrils in a Polymer Thin Film During Spin-Coating.

Published in:

Macromolecular Rapid Communications, 2014, v. 35, n. 6, p. 655, doi. 10.1002/marc.201300837

By:

Park, Minwoo;
Min, Yuho;
Lee, Yu ‐ Jeong;
Jeong, Unyong

Publication type:

Article

Robust Biosensor Based on Carbon Nanotubes/Protein Hybrid Electrolyte Gated Transistors.

Published in:

Chemistry - A European Journal, 2023, v. 29, n. 55, p. 1, doi. 10.1002/chem.202301704

By:

Paradisi, Alessandro;
Berto, Marcello;
Di Giosia, Matteo;
Mazzali, Sara;
Borsari, Marco;
Marforio, Tainah Dorina;
Zerbetto, Francesco;
Calvaresi, Matteo;
Orieshyna, Anna;
Amdursky, Nadav;
Bortolotti, Carlo Augusto;
Biscarini, Fabio

Publication type:

Article

Facile Synthesis of Bis‐pentafluoroarylated Anthracene Derivatives for N‐type Organic‐Field‐Effect Transistor Applications.

Published in:

Chemistry - A European Journal, 2023, v. 29, n. 21, p. 1, doi. 10.1002/chem.202203816

By:

Sato, Ryota;
Yasuda, Takeshi;
Hiroto, Takanobu;
Kanbara, Takaki;
Kuwabara, Junpei

Publication type:

Article

Isomerically Pure Oxindole‐Terminated Quinoids for n‐Type Organic Thin‐Film Transistors Enabled by the Chlorination of Quinoidal Core.

Published in:

Chemistry - A European Journal, 2023, v. 29, n. 12, p. 1, doi. 10.1002/chem.202203336

By:

Lin, Linlin;
Wang, Cheng;
Deng, Yunfeng;
Geng, Yanhou

Publication type:

Article