Works matching DE "GALLIUM phosphide"

Results: 122

Growth and properties of GaInPAsBi solid solutions on GaP substrates.

Published in:

Inorganic Materials, 2014, v. 50, n. 2, p. 113, doi. 10.1134/S0020168514020010

By:

Alfimova, D.;
Lunin, L.;
Lunina, M.

Publication type:

Article

Micromechanical properties of GaP〈Dy〉 epilayers.

Published in:

Inorganic Materials, 2012, v. 48, n. 8, p. 768, doi. 10.1134/S0020168512070047

By:

Brinkevich, D.;
Vabishchevich, N.;
Prosolovich, V.

Publication type:

Article

Approach to suppress the ambipolar current conduction and improve radiofrequency performance in polarity control electrically doped hetero TFET.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 10, p. 1033, doi. 10.1049/mnl.2018.5598

By:

Chandan, Bandi Venkata;
Nigam, Kaushal;
Kondekar, Pravin;
Sharma, Dheeraj

Publication type:

Article

Numerical simulation and performance measure of highly efficient GaP/InP/Si multi-junction solar cell.

Published in:

International Journal of Energy Research, 2017, v. 41, n. 8, p. 1211, doi. 10.1002/er.3708

By:

Sathya, P.;
Natarajan, R.

Publication type:

Article

The structure of sc16 GaP obtained at 17.5 GPa and 1400 K.

Published in:

High Pressure Research, 2022, v. 42, n. 3, p. 294, doi. 10.1080/08957959.2022.2113874

By:

Lavina, B.;
Zanardi, E.;
Mujica, A.;
Cynn, H.;
Meng, Y.;
Smith, J.S.;
Kong, M.;
Lee, Y.

Publication type:

Article

Control of the spontaneous formation of oxide overlayers on GaP nanowires grown by physical vapor deposition.

Published in:

AIMS Materials Science, 2018, v. 5, n. 1, p. 105, doi. 10.3934/matersci.2018.1.105

By:

Wang, Yunyan;
Hegde, Manu;
Chen, Shuoyuan;
Yin, Penghui;
Radovanovic, Pavle V.

Publication type:

Article

CARACTERIZACÍON DE PELICULAS DE FOSFURO DE GALIO NITROGENADO.

Published in:

Momento: Revista de Física, 2012, n. 45, p. 34

By:

Pulzara-Mora, Alvaro;
Meléndez-Lira, Miguel;
López-López, Máximo

Publication type:

Article

Comparison and Evaluation of the Low-Level Laser and the Red and Blue LED Effects on Wound Healing in Rabbit.

Published in:

Journal of Lasers in Medical Sciences, 2019, v. 10, n. 3, p. 189, doi. 10.15171/jlms.2019.30

By:

Ghaemi, Marjan;
Sharifi, Davood;
Mokmeli, Soheila;
Kowsari, Golshad;
Mortazavi, Pejman;
Golmai, Pouneh

Publication type:

Article

The numerical investigation of magnetic properties of single domain MnP:GaP nanoparticles.

Published in:

Modern Physics Letters B, 2016, v. 30, n. 6, p. -1, doi. 10.1142/S0217984916500652

By:

Gerami, Adeleh Mokhles;
Vaez-Zadeh, Mehdi

Publication type:

Article

Investigation on terahertz parametric oscillators using quasi-phase-matching GaP crystal.

Published in:

Modern Physics Letters B, 2015, v. 29, n. 1, p. -1, doi. 10.1142/S0217984914502583

By:

Li, Z. Y.;
Bing, P. B.;
Yuan, S.;
Xu, D. G.;
Yao, J. Q.

Publication type:

Article

Structural Parameters and Spin Filtering Properties of Ga( M)P compound.

Published in:

Journal of Superconductivity & Novel Magnetism, 2016, v. 29, n. 4, p. 959, doi. 10.1007/s10948-016-3396-3

By:

Ketabi, S.

Publication type:

Article

Half-Metallic Ferromagnetic Property Related to Spintronic Applications in 3 d (V, Cr, and Mn)-Doped GaP DMSs.

Published in:

Journal of Superconductivity & Novel Magnetism, 2015, v. 28, n. 10, p. 3163, doi. 10.1007/s10948-015-3148-9

By:

Doumi, B.;
Mokaddem, A.;
Sayede, A.;
Boutaleb, M.;
Tadjer, A.;
Dahmane, F.

Publication type:

Article

Investigation of mechanical, optical, phonon frequencies, and sound velocity of nano-structured Gallium Phosphide (GaP) material under the effect of pressure.

Published in:

Optical & Quantum Electronics, 2024, v. 56, n. 1, p. 1, doi. 10.1007/s11082-023-05638-3

By:

Elamin, Nuha Y.;
Alhussain, Hanan;
Abdelghany, A. M.;
Elkenany, Elkenany B.

Publication type:

Article

Design and numerical verification of a polarization-independent grating coupler using a double-layer approach for visible wavelengths applications.

Published in:

Optical & Quantum Electronics, 2022, v. 54, n. 1, p. 1, doi. 10.1007/s11082-021-03368-y

By:

Khaleel, Farooq Abdulghafoor;
Tawfeeq, Shelan Khasro

Publication type:

Article

Кореляція технологічних чинників синтези por-GaP та його набутих властивостей

Published in:

Nanosistemi, Nanomateriali, Nanotehnologii, 2018, v. 16, n. 4, p. 657

By:

Вамболь, С. О.;
Богданов, І. Т.;
Вамболь, В. В.;
Сичікова, Я. О.;
Ковачов, С. С.

Publication type:

Article

Angular Dependences of the Intensity of the Raman Light Scattering on Polaritons in a Gallium Phosphide Crystal.

Published in:

Optics & Spectroscopy, 2019, v. 127, n. 2, p. 225, doi. 10.1134/S0030400X19080125

By:

Igo, A. V.

Publication type:

Article

Versatile Sensing Structure: GaP/Au/Graphene/Silicon.

Published in:

Photonics, 2021, v. 8, n. 12, p. 547, doi. 10.3390/photonics8120547

By:

Mishra, Satyendra Kumar;
Verma, Rajneesh Kumar;
Mishra, Akhilesh Kumar

Publication type:

Article

Microwave-to-optical conversion with a gallium phosphide photonic crystal cavity.

Published in:

Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-28670-5

By:

Hönl, Simon;
Popoff, Youri;
Caimi, Daniele;
Beccari, Alberto;
Kippenberg, Tobias J.;
Seidler, Paul

Publication type:

Article

Bright single photon emitters with enhanced quantum efficiency in a two-dimensional semiconductor coupled with dielectric nano-antennas.

Published in:

Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-26262-3

By:

Sortino, Luca;
Zotev, Panaiot G.;
Phillips, Catherine L.;
Brash, Alistair J.;
Cambiasso, Javier;
Marensi, Elena;
Fox, A. Mark;
Maier, Stefan A.;
Sapienza, Riccardo;
Tartakovskii, Alexander I.

Publication type:

Article

Generation of even and odd high harmonics in resonant metasurfaces using single and multiple ultra-intense laser pulses.

Published in:

Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-24450-9

By:

Shcherbakov, Maxim R.;
Zhang, Haizhong;
Tripepi, Michael;
Sartorello, Giovanni;
Talisa, Noah;
AlShafey, Abdallah;
Fan, Zhiyuan;
Twardowski, Justin;
Krivitsky, Leonid A.;
Kuznetsov, Arseniy I.;
Chowdhury, Enam;
Shvets, Gennady

Publication type:

Article

Metasurface Photoelectrodes for Enhanced Solar Fuel Generation.

Published in:

Advanced Energy Materials, 2021, v. 11, n. 46, p. 1, doi. 10.1002/aenm.202102877

By:

Hüttenhofer, Ludwig;
Golibrzuch, Matthias;
Bienek, Oliver;
Wendisch, Fedja J.;
Lin, Rui;
Becherer, Markus;
Sharp, Ian D.;
Maier, Stefan A.;
Cortés, Emiliano

Publication type:

Article

Metasurface Photoelectrodes for Enhanced Solar Fuel Generation (Adv. Energy Mater. 46/2021).

Published in:

Advanced Energy Materials, 2021, v. 11, n. 46, p. 1, doi. 10.1002/aenm.202170180

By:

Hüttenhofer, Ludwig;
Golibrzuch, Matthias;
Bienek, Oliver;
Wendisch, Fedja J.;
Lin, Rui;
Becherer, Markus;
Sharp, Ian D.;
Maier, Stefan A.;
Cortés, Emiliano

Publication type:

Article

Study of Wurtzite Crystal Phase Stabilization in Heterostructured Ga(As,P) Nanowires.

Published in:

Semiconductors, 2020, v. 54, n. 14, p. 1862, doi. 10.1134/S1063782620140286

By:

Sibirev, N. V.;
Fedorov, V. V.;
Kirilenko, D. A.;
Ubiyvovk, E. V.;
Berdnikov, Y. S.;
Bolshakov, A. D.;
Mukhin, I. S.

Publication type:

Article

Crystalline-Phase Switching in Heterostructured Ga(As,P) Nanowires under the Impact of Elastic Strains.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1320, doi. 10.1134/S1063782620100267

By:

Sibirev, N. V.;
Berdnikov, Yu. S.;
Sibirev, V. N.

Publication type:

Article

Predicting the Conditions for the Vapor-Phase Epitaxy of the III–V Compounds.

Published in:

Semiconductors, 2019, v. 53, n. 15, p. 2007, doi. 10.1134/S1063782619150132

By:

Vigdorovich, E. N.

Publication type:

Article

Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2128, doi. 10.1134/S1063782618160327

By:

Sobolev, M. S.;
Lazarenko, A. A.;
Mizerov, A. M.;
Nikitina, E. V.;
Pirogov, E. V.;
Timoshnev, S. N.;
Bouravleuv, A. D.

Publication type:

Article

Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2092, doi. 10.1134/S106378261816008X

By:

Fedorov, V. V.;
Bolshakov, A. D.;
Dvoretckaia, L. N.;
Sapunov, G. A.;
Kirilenko, D. A.;
Mozharov, A. M.;
Shugurov, K. Yu.;
Shkoldin, V. A.;
Cirlin, G. E.;
Mukhin, I. S.

Publication type:

Article

MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1428, doi. 10.1134/S1063782618110210

By:

Reznik, R. R.;
Kotlyar, K. P.;
Ilkiv, I. V.;
Soshnikov, I. P.;
Lebedev, S. P.;
Lebedev, A. A.;
Kirilenko, D. A.;
Alexeev, P. A.;
Cirlin, G. E.

Publication type:

Article

On the theory of the two-photon linear photovoltaic effect in n-GaP.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 145, doi. 10.1134/S1063782616020196

By:

Rasulov, V.;
Rasulov, R.

Publication type:

Article

Zinc diffusion upon isovalent substitution in gallium phosphide.

Published in:

Semiconductors, 2015, v. 49, n. 13, p. 1684, doi. 10.1134/S1063782615130151

By:

Vigdorovich, E.

Publication type:

Article

Photoluminescence of heterostructures with GaPN and GaPNAs layers grown on GaP and Si substrates by molecular-beam epitaxy.

Published in:

Semiconductors, 2015, v. 49, n. 4, p. 479, doi. 10.1134/S1063782615040144

By:

Lazarenko, A.;
Nikitina, E.;
Sobolev, M.;
Pirogov, E.;
Denisov, D.;
Egorov, A.

Publication type:

Article

Admittance spectroscopy of solar cells based on GaPNAs layers.

Published in:

Semiconductors, 2015, v. 49, n. 4, p. 524, doi. 10.1134/S1063782615040053

By:

Baranov, A.;
Gudovskikh, A.;
Zelentsov, K.;
Nikitina, E.;
Egorov, A.

Publication type:

Article

MBE growth of GaP on a Si substrate.

Published in:

Semiconductors, 2015, v. 49, n. 4, p. 559, doi. 10.1134/S1063782615040235

By:

Sobolev, M.;
Lazarenko, A.;
Nikitina, E.;
Pirogov, E.;
Gudovskikh, A.;
Egorov, A.

Publication type:

Article

Gallium Phosphide Solar Cell Structures with Improved Quantum Efficiencies.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 6, p. 3435, doi. 10.1007/s11664-019-07848-6

By:

Siao, Hui-Ying;
Bunk, Ryan J.;
Woodall, Jerry M.

Publication type:

Article

The Effect of Thermal Annealing and Measurement Temperature on Interface State Density Distribution and Time Constant in Ni/n-GaP Rectifying Contacts.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 7, p. 3502, doi. 10.1007/s11664-018-6192-y

By:

Ejderha, K.;
Orak, I.;
Duman, S.;
Turut, A.

Publication type:

Article

Electrical Characteristics of Schottky Contacts to p-Type (001) GaP: Understanding of Carrier Transport Mechanism.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 10, p. 5297, doi. 10.1007/s11664-016-4737-5

By:

Song, Sungjoo;
Kim, Dae-Hyun;
Kang, Daesung;
Seong, Tae-Yeon

Publication type:

Article

Estimation of Minimal Breakdown Point in a GaP Plasma Structure and Discharge Features in Air and Argon Media.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 8, p. 3872, doi. 10.1007/s11664-016-4529-y

By:

Kurt, H.;
Tanrıverdi, Evrim

Publication type:

Article

Theoretical and Experimental Exploration of Breakdown Phenomena in an Argon-Filled GaP Device.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 8, p. 3970, doi. 10.1007/s11664-016-4539-9

By:

Kurt, H.;
Tanrıverdi, Evrim;
Kurt, Erol

Publication type:

Article

Layered Growth of Lattice-Mismatched GaInP on GaP Substrates by Liquid Phase Epitaxy.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 4, p. 894, doi. 10.1007/s11664-013-2966-4

By:

Zhao, Xin;
Montgomery, Kyle;
Woodall, Jerry

Publication type:

Article

Liquid-metal field electron source based on porous GaP.

Published in:

Technical Physics, 2017, v. 62, n. 9, p. 1424, doi. 10.1134/S1063784217090171

By:

Masalov, S.;
Popov, E.;
Kolos'ko, A.;
Filippov, S.;
Ulin, V.;
Evtikhiev, V.;
Atrashchenko, A.

Publication type:

Article

Ambient Temperature–Corrected Mechanical Stress Mapping of Gallium Nitride and Aluminum Indium Gallium Phosphide Films by Raman Scattering Spectroscopy for Characterization of Light‐Emitting Diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900776

By:

Guo, Xiaoru;
Mughal, Asad;
Dunphy, Darren;
Stone, Gregory;
Miller, David;
Huh, Sungwook

Publication type:

Article

Study of structural, electronic, magnetic, and elastic properties of GaP and GaXP (where X = Cr, Mn, and Fe) using DFT studies.

Published in:

Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 12, p. 1, doi. 10.1007/s00339-017-1398-z

By:

Kaur, Kirandish;
Rani, Anita

Publication type:

Article

Heterogeneous Oxygen-Containing Species Formed via Oxygen or Water Dissociative Adsorption onto a Gallium Phosphide Surface.

Published in:

Topics in Catalysis, 2016, v. 59, n. 5/7, p. 564, doi. 10.1007/s11244-015-0526-2

By:

Zhang, Xueqiang;
Ptasinska, Sylwia

Publication type:

Article

Ultra-low-noise microwave to optics conversion in gallium phosphide.

Published in:

Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-34338-x

By:

Stockill, Robert;
Forsch, Moritz;
Hijazi, Frederick;
Beaudoin, Grégoire;
Pantzas, Konstantinos;
Sagnes, Isabelle;
Braive, Rémy;
Gröblacher, Simon

Publication type:

Article

AB-INITIO CALCULATIONS OF ELECTRONIC PROPERTIES OF AND.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2013, v. 27, n. 15, p. -1, doi. 10.1142/S0217979213620130

By:

MALOZOVSKY, Y.;
FRANKLIN, L.;
EKUMA, E. C.;
ZHAO, G. L.;
BAGAYOKO, D.

Publication type:

Article

Vapor–liquid–solid growth of highly stoichiometric gallium phosphide nanowires on silicon: restoration of chemical balance, congruent sublimation and maximization of band-edge emission.

Published in:

European Physical Journal: Special Topics, 2022, v. 231, n. 4, p. 723, doi. 10.1140/epjs/s11734-021-00388-3

By:

Amiri, Seyed Ebrahim Hashemi;
Turkdogan, Sunay;
Ranga, Praneeth;
Fan, Fan;
Gan, Lin;
Ning, Cun-Zheng

Publication type:

Article

Correction to: Investigating the optical properties and electronic structure of gallium phosphide nanotubes doped with arsenic via implementing first-principles calculations.

Published in:

2024

By:

Nawaf, Sameer;
Rzaij, Jamal M.;
Al-Jobory, Alaa A.;
Motlak, Moaaed

Publication type:

Correction Notice

Correction to: Phosphide in gallium bismuth: structural, electronic, elastic, and optical properties of GaPxBi1−x alloys.

Published in:

2022

By:

Touam, S.;
Mounis, N.;
Boumaza, A.;
Ghemid, S.;
Meradji, H.;
Khenata, R.;
Bin Omran, S.;
Badi, N.;
Kushwaha, A. K.

Publication type:

Correction Notice

Phosphide in gallium bismuth: structural, electronic, elastic, and optical properties of GaPxBi1−x alloys.

Published in:

Journal of Molecular Modeling, 2022, v. 28, n. 7, p. 1, doi. 10.1007/s00894-022-05167-y

By:

Touam, S.;
Mounis, N.;
Boumaza, A.;
Ghemid, S.;
Meradji, H.;
Khenata, R.;
Omran, S. Bin;
Badi, N.;
Kushwaha, A. K.

Publication type:

Article

Ab-initio study of structural, electronic, and transport properties of zigzag GaP nanotubes.

Published in:

Journal of Molecular Modeling, 2014, v. 20, n. 3, p. 1, doi. 10.1007/s00894-014-2171-2

By:

Srivastava, Anurag;
Jain, Sumit;
Khare, Purnima

Publication type:

Article