Works matching DE "BREAKDOWN voltage"

Results: 1249

Interfacial Chemical and Electrical Performance Study and Thermal Annealing Refinement for AlTiO/4H-SiC MOS Capacitors.

Published in:

Nanomaterials (2079-4991), 2025, v. 15, n. 11, p. 814, doi. 10.3390/nano15110814

By:

Zeng, Yu-Xuan;
Huang, Wei;
Ma, Hong-Ping;
Zhang, Qing-Chun

Publication type:

Article

Enhanced Energy Storage Properties of PVDF-HFP Composites by Introducing ZnO@ZnS Heterojunction.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 7, p. 5226, doi. 10.1007/s11664-025-11984-7

By:

Chi, Hao;
Zhou, Hong;
Tu, Xuesong;
Zhou, Jian

Publication type:

Article

Selection of Appropriate Plant-Based Oils and Neo-polyols for Transesterification to Produce Polyolesters-Based Bio-transformer Oil.

Published in:

BioEnergy Research, 2025, v. 18, n. 1, p. 1, doi. 10.1007/s12155-025-10860-w

By:

Sornvoralop, Ratchayol;
Yoosuk, Boonyawan;
Hinchiranan, Napida

Publication type:

Article

Исследование процесса горения поджигающего искрового разряда импульсного плазмен- ного двигателя

Published in:

Recent Contributions to Physics, 2025, v. 92, n. 1, p. 60, doi. 10.26577/RCPh20259216

By:

Игибаев, Ж. Б.;
Досболаев, М. К.

Publication type:

Article

Assessing biorefinery-derived used cooking oil methyl esters for compatibility with paper insulations in transformers.

Published in:

Energy Sources Part A: Recovery, Utilization & Environmental Effects, 2025, v. 47, n. 1, p. 4997, doi. 10.1080/15567036.2025.2461735

By:

Durairaj, Karthik Prabhu;
Jaya Christa, Sargunar Thomas;
Seetharaman, Suresh;
Ananthan, Bhuvanesh

Publication type:

Article

Performance Analysis of LDMOS Transistor with Alternating Oxide and Silicon Windows in the Drift Region.

Published in:

IETE Technical Review, 2025, v. 42, n. 2, p. 238, doi. 10.1080/02564602.2025.2485920

By:

Sohrabi-Movahed, Amir;
Orouji, Ali A.

Publication type:

Article

Correlation Research Between Surface Ablation and Cross-linked Polyethylene Insulation Layer.

Published in:

Plastics Science & Technology / Suliao Ke-Ji, 2025, v. 53, n. 4, p. 99, doi. 10.15925/j.cnki.issn1005-3360.2025.04.017

By:

YANG Zhuoran;
WANG Han;
TONG Bin;
LÜ Lixiang

Publication type:

Article

Accurate and Efficient Process Modeling and Inverse Optimization for Trench Metal Oxide Semiconductor Field Effect Transistors: A Machine Learning Proxy Approach.

Published in:

Processes, 2025, v. 13, n. 5, p. 1544, doi. 10.3390/pr13051544

By:

Geng, Mingqiang;
Guo, Jianming;
Sun, Yuting;
Gao, Dawei;
Ni, Dong

Publication type:

Article

Deep Learning Method for Breakdown Voltage and Forward I-V Characteristic Prediction of Silicon Carbide Schottky Barrier Diodes.

Published in:

Micromachines, 2025, v. 16, n. 5, p. 583, doi. 10.3390/mi16050583

By:

Zhou, Hao;
Wang, Xiang;
Wang, Shulong;
Liu, Chenyu;
Chen, Dongliang;
Li, Jiarui;
Ma, Lan;
Zhang, Guohao

Publication type:

Article

Soft-assembled, bio-gel electrolytic double layer capacitor system for sustainable energy storage.

Published in:

Soft Materials, 2023, v. 21, n. 1, p. 117, doi. 10.1080/1539445X.2023.2169458

By:

Amache-Vaccaro, Rana;
Bebe, Siziwe;
Prakash, Ravi

Publication type:

Article

Fe-Si-Cr Alloy–Ni-Cu-Zn Ferrite Composite Multilayer Inductors: Fabrication, Co-firing, and Magnetic Performance.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4648, doi. 10.1007/s11664-025-11856-0

By:

Hsiang, Hsing-I;
Hsu, Yu-Chun;
Lee, Wen-Hsi;
Priese, Christoph;
Töpfer, Jörg

Publication type:

Article

Impact of Gate Angle Variations on DC and RF Performance of Enhancement-Mode Al0.15Ga0.85N/GaN/Al0.07Ga0.93N MIS-HEMT Device: Impact of Gate Angle Variations on DC and RF Performance...: L. Lino et al.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 3, p. 2447, doi. 10.1007/s11664-024-11726-1

By:

Lino, L.;
Saravana Kumar, R.;
Leeban Moses, M.;
Mohanbabu, A.

Publication type:

Article

Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 3, p. 2340, doi. 10.1007/s11664-024-11664-y

By:

Murugapandiyan, P.;
Revathy, A.;
Ramkumar, N.;
Kumar, R. Saravana;
Mohanbabu, A.

Publication type:

Article

Improvement of Breakdown Characteristic for a Novel GaN HEMT with Enhanced Resistance Single-Event Transient Effect.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 1, p. 784, doi. 10.1007/s11664-024-11579-8

By:

Sun, Shuxiang;
Zhang, Yajun;
Si, Yihan;
Xiong, Juan;
Luo, Xiaorong

Publication type:

Article

A Snapback-Free Reverse-Conducting LIGBT with Embedded Anti-parallel Schottky Barrier Diode.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 12, p. 8039, doi. 10.1007/s11664-024-11433-x

By:

Qin, Haifeng;
Shen, Wenliang;
Li, Wei;
Wan, Li;
Chen, Weizhong

Publication type:

Article

Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 9, p. 5555, doi. 10.1007/s11664-024-11289-1

By:

Lino, L.;
Saravana Kumar, R.;
Mohanbabu, A.;
Murugapandiyan, P.

Publication type:

Article

Investigating Viability of Split-Stepped Gate Field Plate Design on Ga2O3 MOSFET for High Power Applications.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 8, p. 4544, doi. 10.1007/s11664-024-11225-3

By:

Goyal, Priyanshi;
Kaur, Harsupreet

Publication type:

Article

4.87 kV SiC MOSFET Using HfSiOx/SiO2 Gate Dielectrics Combined with PN Pillars.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2601, doi. 10.1007/s11664-024-11014-y

By:

Fletcher, A. S. Augustine;
Franklin, S. Angen;
Murugapandiyan, P.;
Ajayan, J.;
Nirmal, D.

Publication type:

Article

Enhancement Mode AlGaN/GaN MISHEMT on Ultra-Wide Band Gap β-Ga2O3 Substrate for RF and Power Electronics.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 6, p. 2973, doi. 10.1007/s11664-024-11005-z

By:

Murugapandiyan, P.;
Sri Rama Krishna, Kalva;
Revathy, A.;
Fletcher, Augustine

Publication type:

Article

Investigation of Double RESURF P-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Partial N-GaN Channels.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2562, doi. 10.1007/s11664-024-10987-0

By:

Li, Huan;
Bai, Zhiyuan;
Yang, Lian

Publication type:

Article

Research on a High-Threshold-Voltage AlGaN/GaN HEMT with P-GaN Cap and Recessed Gate in Combination with Graded AlGaN Barrier Layer.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2533, doi. 10.1007/s11664-024-10968-3

By:

Chen, Zhichao;
Cai, Lie;
Niu, Kai;
Xu, Chaozhi;
Lin, Haoxiang;
Ren, Pengpeng;
Sun, Dong;
Lin, Haifeng

Publication type:

Article

Influence of aluminium oxidation on insulation properties of oxide coating.

Published in:

Surface Engineering, 2019, v. 35, n. 7, p. 573, doi. 10.1080/02670844.2018.1542054

By:

Posmyk, Andrzej

Publication type:

Article

Study on the main factors affecting the breakdown voltage of (Bi0.5Na0.5) TiO3-added (Ba0.659Pb0.341)TiO3 PTCR ceramic materials.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 18, p. 17046, doi. 10.1007/s10854-019-02051-z

By:

Zhu, Xingwen;
Chen, Yuren;
Yu, Jimei;
Lai, Shishi;
Song, Zejun;
Jiang, Wenzhong;
Zhou, Xiao

Publication type:

Article

Effect of insulation barrier on AC breakdown voltage of rod-plane gaps and analysis of surface residual charge property.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 10, p. 9513, doi. 10.1007/s10854-019-01283-3

By:

Li, Guochang;
Wang, Jiaxing;
Wei, Yanhui;
Li, Shengtao;
Wang, Jingbing;
Zan, Haibin

Publication type:

Article

AgCrO2 formation mechanism during silver inner electrode and Fe–Si–Cr alloy powder co-firing in metal multilayer chip power inductors.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 8, p. 8080, doi. 10.1007/s10854-019-01130-5

By:

Wu, Yung-Ping;
Chiang, Hsin-Yun;
Hsiang, Hsing-I

Publication type:

Article

Structural, optical, and dielectric studies of LaFe1−xMoxO3 (x = 0.0, 0.5) perovskite materials.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 3, p. 2512, doi. 10.1007/s10854-018-0525-8

By:

Triyono, D.;
Laysandra, H.;
Liu, H. L.

Publication type:

Article

Effect of rolling temperature on the microstructure and electric properties of β-polyvinylidene fluoride films.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 18, p. 15957, doi. 10.1007/s10854-018-9681-0

By:

Yang, Lu;
Qiu, Jinhao;
Zhu, Kongjun;
Ji, Hongli;
Zhao, Qiuying;
Shen, Mingxia;
Zeng, Shaohua

Publication type:

Article

Dielectric-electrode interactions in glass and silicon-compatible thin-film (Ba,Sr)TiO capacitors.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 1, p. 595, doi. 10.1007/s10854-016-5563-5

By:

Gandhi, Saumya;
Xiang, Shu;
Kumar, Manish;
Sharma, Himani;
Chakraborti, Parthasarathi;
Raj, P.;
Tummala, Rao

Publication type:

Article

Low-leakage current and high-breakdown voltage GaN-on-Si (111) System with an AlGaN impurity blocking layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 5, p. 5158, doi. 10.1007/s10854-016-4408-6

By:

Ni, Yiqiang;
He, Liang;
Zhou, Deqiu;
He, Zhiyuan;
Chen, Zijun;
Zheng, Yue;
Yang, Fan;
Shen, Zhen;
Zhang, Xiaorong;
He, Lei;
Wu, Zhisheng;
Zhang, Baijun;
Liu, Yang

Publication type:

Article

Influence of SmO on electrical performance of (Nb, Si)-doped TiO-based varistor.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 4, p. 3355, doi. 10.1007/s10854-015-4165-y

By:

Li, Yadong;
Zhu, Dachuan;
Xiang, Xu;
Wang, Jinshan

Publication type:

Article

High-κ NdTaO dielectrics deposited on polycrystalline silicon substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 4, p. 3693, doi. 10.1007/s10854-015-4209-3

By:

Kao, Chyuan;
Lin, Min;
He, Yun;
Lin, Yung-Sen;
Lin, Chia;
Chen, Hsiang;
Syu, Jhih

Publication type:

Article

Molten salt synthesis of doped nanocrystalline ZnO powders and applications in varistor ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 4, p. 3704, doi. 10.1007/s10854-015-4211-9

By:

Liu, Ting-Ting;
Wang, Mao-Hua;
Zhang, Han-Ping;
Zhao, Yin-Zhong

Publication type:

Article

Fractal analysis of side channels for breakdown structures in XLPE cable insulation.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 5, p. 1640, doi. 10.1007/s10854-012-0988-y

By:

Li, Huan;
Li, Jianying;
Li, Weiwei;
Zhao, Xuetong;
Wang, Guoli;
Alim, Mohammad

Publication type:

Article

In-line characterization of dielectric constant and leakage currents of low-k films with corona charge method.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 115, doi. 10.1007/s10854-007-9328-z

By:

Fossati, D.;
Beitia, C.;
Plantier, L.;
Imbert, G.;
Passefort, S.;
Desbois, M.;
Volpi, F.;
Royer, J.-C.

Publication type:

Article

Degradation of the compression strength of spacers made of high-density pressboard used in power transformers under the influence of thermal ageing.

Published in:

Cellulose, 2023, v. 30, n. 10, p. 6539, doi. 10.1007/s10570-023-05268-8

By:

Oria, C.;
Méndez, C.;
Carrascal, I.;
Ferreño, D.;
Ortiz, A.

Publication type:

Article

High-Voltage ZnO-Based Ceramics with a Leakage Current Density below 1 μA/cm2.

Published in:

Inorganic Materials, 2019, v. 55, n. 4, p. 405, doi. 10.1134/S0020168519030154

By:

Tikhomirova, E. L.;
Savel'ev, Yu. A.;
Gromov, O. G.

Publication type:

Article

低气压环境电气化铁路弓网电弧放电特性研究.

Published in:

Railway Standard Design, 2022, v. 66, n. 6, p. 138, doi. 10.13238/j.issn.1004-2954.202106230008

By:

景所立;
魏隆;
陈欢;
李杰;
鲁超;
母婷佑;
阴国锋

Publication type:

Article

AC-SJ VDMOS with ultra-low resistance.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2020, v. 15, n. 4, p. 230, doi. 10.1049/mnl.2019.0497

By:

Yandong Wang;
Baoxing Duan;
Chen Zhang;
Xiameng Wang;
Yintang Yang

Publication type:

Article

Novel SOI LIGBT with fast-switching by the electric field modulation.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2020, v. 15, n. 3, p. 157, doi. 10.1049/mnl.2019.0424

By:

Licheng Sun;
Baoxing Duan;
Yintang Yang

Publication type:

Article

Design and development of an AlGaN/GaN heterostructure nano-ATT oscillator: experimental feasibility studies in THz domain.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2020, v. 15, n. 1, p. 41, doi. 10.1049/mnl.2019.0167

By:

Chakraborty, Debraj;
Maity, Biswajit;
Mukherjee, Moumita

Publication type:

Article

Fog Droplet Collection by Corona Discharge in a Needle–Cylinder Electrostatic Precipitator with a Water Cooling System.

Published in:

Separations (2297-8739), 2022, v. 9, n. 7, p. N.PAG, doi. 10.3390/separations9070169

By:

Fu, Hui;
Xu, Wenyi;
Liu, Zhen;
Yan, Keping

Publication type:

Article

硅酸钠浓度对 ME21 镁合金微弧氧化膜微观结构及耐蚀性的影响.

Published in:

Electroplating & Finishing, 2023, v. 42, n. 8, p. 12, doi. 10.19289/j.1004-227x.2023.08.003

By:

韩帅;
卢艳青;
张新禹;
朱白林;
魏双磊;
苏俊豪;
刘岱宗

Publication type:

Article

Analysis of breakdown mechanism based on contact area and field enhancement factor of different electrode‐material combinations.

Published in:

International Journal of Energy Research, 2022, v. 46, n. 9, p. 12674, doi. 10.1002/er.8036

By:

Akin, Firat;
Arikan, Oktay

Publication type:

Article

Reduced power degradation in bifacial PERC modules by a rear silicon oxide additive layer.

Published in:

International Journal of Energy Research, 2021, v. 45, n. 6, p. 8659, doi. 10.1002/er.6402

By:

Pu, Tian;
Shen, Honglie;
Neoh, Kuang Hong;
Ye, Fei;
Tang, Quntao

Publication type:

Article

Flexible Diodes with Low Breakdown Voltage for Steep Slope Transistors and One Diode‐One Resistor Applications.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100961

By:

Aziz, Jamal;
Kim, Honggyun;
Rehman, Shania;
Khan, Muhammad Farooq;
Kadam, Kalyani D.;
Patil, Harshada;
Aftab, Sikandar;
Dastgeer, Ghulam;
Kim, Deok‐kee

Publication type:

Article

The Growth, Composition, and Functional Properties of Self‐Organized Nanostructured ZrO2‐Al2O3 Anodic Films for Advanced Dielectric Applications.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 10, p. 1, doi. 10.1002/aelm.202100505

By:

Kamnev, Kirill;
Sepúlveda, Marcela;
Bendova, Maria;
Pytlicek, Zdenek;
Prasek, Jan;
Kolibalova, Eva;
Michalicka, Jan;
Mozalev, Alexander

Publication type:

Article

Peripheral Nanostructured Porous Silicon Boosts Static and Dynamic Performance of Integrated Electronic Devices.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 12, p. 1, doi. 10.1002/aelm.202000615

By:

Paghi, Alessandro;
Strambini, Lucanos;
Toia, Fabrizio F.;
Sambi, Marco;
Marchesi, Marco;
Depetro, Riccardo;
Morelli, Marco;
Barillaro, Giuseppe

Publication type:

Article

Simulation study of front-illuminated GaN avalanche photodiodes with hole-initiated multiplication.

Published in:

Cogent Engineering, 2020, v. 7, n. 1, p. 1, doi. 10.1080/23311916.2020.1764171

By:

Wang, Yangqian;
Zhang, Yuliang;
Yang, Yang A.;
Lu, Xing;
Zou, Xinbo;
Konofaos, Nikos

Publication type:

Article

Mushroom Mesa Structure for InAlAs–InGaAs Avalanche Photodiodes.

Published in:

Technical Physics Letters, 2023, v. 49, p. S215, doi. 10.1134/S1063785023900819

By:

Maleev, N. A.;
Kuzmenkov, A. G.;
Kulagina, M. M.;
Vasyl'ev, A. P.;
Blokhin, S. A.;
Troshkov, S. I.;
Nashchekin, A. V.;
Bobrov, M. A.;
Blokhin, A. A.;
Voropaev, K. O.;
Bugrov, V. E.;
Ustinov, V. M.

Publication type:

Article

Experimental Approach of Dielectric Losses Measurement in Insulating Paper under Distorted Voltage Stress.

Published in:

Electric Power Components & Systems, 2009, v. 37, n. 8, p. 798, doi. 10.1080/15325000902762372

By:

Megherbi, Mohammed;
Bitam-Megherbi, Ferroudja;
Benamrouche, Nacereddine

Publication type:

Article