Works matching DE "INDIUM gallium arsenide"

Results: 541

A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications (Adv. Funct. Mater. 3/2022).
Published in:
Advanced Functional Materials, 2022, v. 32, n. 3, p. 1, doi. 10.1002/adfm.202270020
By:
- Zhang, Fanlu;
- Zhang, Xutao;
- Li, Ziyuan;
- Yi, Ruixuan;
- Li, Zhe;
- Wang, Naiyin;
- Xu, Xiaoxue;
- Azimi, Zahra;
- Li, Li;
- Lysevych, Mykhaylo;
- Gan, Xuetao;
- Lu, Yuerui;
- Tan, Hark Hoe;
- Jagadish, Chennupati;
- Fu, Lan
Publication type:
Article
A New Strategy for Selective Area Growth of Highly Uniform InGaAs/InP Multiple Quantum Well Nanowire Arrays for Optoelectronic Device Applications.
Published in:
Advanced Functional Materials, 2022, v. 32, n. 3, p. 1, doi. 10.1002/adfm.202103057
By:
- Zhang, Fanlu;
- Zhang, Xutao;
- Li, Ziyuan;
- Yi, Ruixuan;
- Li, Zhe;
- Wang, Naiyin;
- Xu, Xiaoxue;
- Azimi, Zahra;
- Li, Li;
- Lysevych, Mykhaylo;
- Gan, Xuetao;
- Lu, Yuerui;
- Tan, Hark Hoe;
- Jagadish, Chennupati;
- Fu, Lan
Publication type:
Article
Fast, Energy‐Efficient InGaAs Synaptic Phototransistors on Flexible Substrate.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300437
By:
- Kim, Tae Soo;
- Jeon, Sung‐Han;
- Ko, Kyeol;
- Ahn, Dae‐Hwan;
- Han, Jae‐Hoon;
- Choi, Won Jun;
- Yu, Ki Jun
Publication type:
Article
Fast, Energy‐Efficient InGaAs Synaptic Phototransistors on Flexible Substrate (Adv. Electron. Mater. 11/2023).
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202370050
By:
- Kim, Tae Soo;
- Jeon, Sung‐Han;
- Ko, Kyeol;
- Ahn, Dae‐Hwan;
- Han, Jae‐Hoon;
- Choi, Won Jun;
- Yu, Ki Jun
Publication type:
Article
High Thermoelectric Power Factor and ZT in TbAs:InGaAs Epitaxial Nanocomposite Material.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201900015
By:
- Tew, Bo E.;
- Vempati, Pratyusha;
- Clinger, Laura E.;
- Bomberger, Cory C.;
- Halaszynski, Nicole I.;
- Favaloro, Tela;
- Seol, Jae H.;
- Feser, Joseph P.;
- Majumdar, Arun;
- Shakouri, Ali;
- Bowers, John E.;
- Bahk, Je‐Hyeong;
- Zide, Joshua M. O.
Publication type:
Article
Selective analysis of the elemental composition of InGaAs/GaAs nanoclusters by secondary ion mass spectrometry.
Published in:
Technical Physics Letters, 2017, v. 43, n. 5, p. 477, doi. 10.1134/S1063785017050170
By:
- Drozdov, M.;
- Danil'tsev, V.;
- Drozdov, Yu.;
- Khrykin, O.;
- Yunin, P.
Publication type:
Article
Stress relaxation in InGaAsP/InP heterostructures for 1064-nm laser radiation converters.
Published in:
Technical Physics Letters, 2017, v. 43, n. 1, p. 88, doi. 10.1134/S1063785017010230
By:
- Marichev, A.;
- Levin, R.;
- Gordeeva, A.;
- Gagis, G.;
- Kuchinskii, V.;
- Pushnyi, B.;
- Prasolov, N.;
- Shmidt, N.
Publication type:
Article
All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures.
Published in:
Technical Physics Letters, 2017, v. 43, n. 1, p. 101, doi. 10.1134/S1063785017010254
By:
- Podoskin, A.;
- Shashkin, I.;
- Slipchenko, S.;
- Pikhtin, N.;
- Tarasov, I.
Publication type:
Article
Laser generation at 1.3 μm in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping.
Published in:
Technical Physics Letters, 2016, v. 42, n. 10, p. 1009, doi. 10.1134/S1063785016100023
By:
- Blokhin, S.;
- Kryzhanovskaya, N.;
- Moiseev, E.;
- Bobrov, M.;
- Kuz'menkov, A.;
- Blokhin, A.;
- Vasil'ev, A.;
- Karpovskii, I.;
- Zadiranov, Yu.;
- Troshkov, S.;
- Nevedomskii, V.;
- Nikitina, E.;
- Maleev, N.;
- Ustinov, V.
Publication type:
Article
Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range.
Published in:
Technical Physics Letters, 2016, v. 42, n. 10, p. 1038, doi. 10.1134/S1063785016100266
By:
- Solov'ev, V.;
- Chernov, M.;
- Mel'tser, B.;
- Semenov, A.;
- Terent'ev, Ya.;
- Firsov, D.;
- Komkov, O.;
- Ivanov, S.
Publication type:
Article
The waveguide effect of InGaAs quantum wells in a GaAs structure on Si substrate with Ge buffer layer.
Published in:
Technical Physics Letters, 2015, v. 41, n. 7, p. 648, doi. 10.1134/S1063785015070020
By:
- Aleshkin, V.;
- Dikareva, N.;
- Dubinov, A.;
- Zvonkov, B.;
- Kudryavtsev, K.;
- Nekorkin, S.;
- Novikov, A.;
- Yunin, P.;
- Yurasov, D.
Publication type:
Article
The influence of polarized oscillations on the emission spectrum of a multicascade planar structure based on InGaAs/InAlAs layers.
Published in:
Technical Physics Letters, 2014, v. 40, n. 8, p. 720, doi. 10.1134/S1063785014080197
By:
- Gryschuk, A.
Publication type:
Article
Photomodulation fourier transform infrared spectroscopy of semiconductor structures: Features of phase correction and application of method.
Published in:
Technical Physics Letters, 2013, v. 39, n. 12, p. 1071, doi. 10.1134/S1063785013120079
By:
- Firsov, D.;
- Komkov, O.
Publication type:
Article
Semiconductor InGaAs/GaAs injection lasers with waveguides based on a single quantum well.
Published in:
Technical Physics Letters, 2013, v. 39, n. 4, p. 364, doi. 10.1134/S1063785013040251
By:
- Slipchenko, S.;
- Podoskin, A.;
- Pikhtin, N.;
- Leshko, A.;
- Rozhkov, A.;
- Tarasov, I.
Publication type:
Article
A magnetically controlled LED with S-shaped current-voltage characteristic.
Published in:
Technical Physics Letters, 2012, v. 38, n. 11, p. 1045, doi. 10.1134/S1063785012110247
By:
- Kudrin, A.;
- Dorokhin, M.;
- Danilov, Yu.
Publication type:
Article
Influence of the position of InGaAs quantum dot array on the spectral characteristics of AlGaAs/GaAs photovoltaic converters.
Published in:
Technical Physics Letters, 2012, v. 38, n. 11, p. 1024, doi. 10.1134/S1063785012110193
By:
- Blokhin, S.;
- Nadtochiy, A.;
- Mintairov, S.;
- Kalyuzhny, N.;
- Emel'yanov, V.;
- Nevedomsky, V.;
- Shvarts, M.;
- Maximov, M.;
- Lantratov, V.;
- Ledentsov, N.;
- Ustinov, V.
Publication type:
Article
Mid-infrared radiation sources based on coupled disk cavities.
Published in:
Technical Physics Letters, 2012, v. 38, n. 4, p. 304, doi. 10.1134/S1063785012040062
By:
- Grebenshchikova, E.;
- Sherstnev, V.;
- Larchenkov, M.;
- Serebrennikova, O.;
- Il'inskaya, N.;
- Monakhov, A.;
- Teissier, R.;
- Baranov, A.;
- Yakovlev, Yu.
Publication type:
Article
The effect of barrier width in coupled asymmetric double quantum well structure on passive mode-locking region of existence.
Published in:
Technical Physics Letters, 2012, v. 38, n. 4, p. 316, doi. 10.1134/S1063785012040037
By:
- Buyalo, M.;
- Gorbazevich, A.;
- Egorov, A.;
- Gadzhiyev, I.;
- Bakshaev, I.;
- Zadiranov, Yu.;
- Il'inskaya, N.;
- Portnoi, E.
Publication type:
Article
Epitaxial Growth of Highly Stressed InGaAs/InAlAs Layers on InP Substrates by Molecular-Beam Epitaxy.
Published in:
Technical Physics, 2024, v. 69, n. 6, p. 1493, doi. 10.1134/S1063784224060021
By:
- Andryushkin, V. V.;
- Novikov, I. I.;
- Gladyshev, A. G.;
- Babichev, A. V.;
- Karachinsky, L. Ya.;
- Dudelev, V. V.;
- Sokolovskii, G. S.;
- Egorov, A. Yu.
Publication type:
Article
Effect of Substrate Misorientation on the Properties of p-HEMT GaAs-Based Nanoheterostructures Formed during MOCVD Epitaxy.
Published in:
Technical Physics, 2024, v. 69, n. 3, p. 485, doi. 10.1134/S1063784224020063
By:
- Boldyrevskii, P. B.;
- Filatov, D. O.;
- Belyakov, V. A.;
- Gorshkov, A. P.;
- Makartsev, I. V.;
- Nezhdanov, A. V.;
- Revin, M. V.;
- Filatov, A. D.;
- Junin, P. A.
Publication type:
Article
Circularly Polarized Electroluminescence of InGaAs/GaAs/CoPt Spin Light Emitting Diodes Placed in a Strong and Weak Magnetic Field.
Published in:
Technical Physics, 2023, v. 68, p. S418, doi. 10.1134/S1063784223900607
By:
- Dorokhin, M. V.;
- Demina, P. B.;
- Zdoroveyshchev, A. V.;
- Zaitsev, S. V.;
- Kudrin, A. V.
Publication type:
Article
Investigation of the Characteristics of the InGaAs/InAlGaAs Superlattice for 1300 nm Range Vertical-Cavity Surface-Emitting Lasers.
Published in:
Technical Physics, 2023, v. 68, n. 12, p. 549, doi. 10.1134/S1063784223080078
By:
- Blokhin, S. A.;
- Babichev, A. V.;
- Gladyshev, A. G.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Blokhin, A. A.;
- Bobrov, M. A.;
- Maleev, N. A.;
- Kuzmenkov, A. G.;
- Nadtochiy, A. M.;
- Nevedomskiy, V. N.;
- Andryushkin, V. V.;
- Rochas, S. S.;
- Denisov, D. V.;
- Voropaev, K. O.;
- Zhumaeva, I. O.;
- Ustinov, V. M.;
- Egorov, A. Yu.;
- Bougrov, V. E.
Publication type:
Article
High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures.
Published in:
Technical Physics, 2021, v. 66, n. 9, p. 1072, doi. 10.1134/S1063784221070185
By:
- Zhuravlev, K. S.;
- Gilinsky, A. M.;
- Chistokhin, I. B.;
- Valisheva, N. A.;
- Dmitriev, D. V.;
- Toropov, A. I.;
- Aksenov, M. S.;
- Chizh, A. L.;
- Mikitchuk, K. B.
Publication type:
Article
Messung der Homogenität der Strahldichte einer Ulbricht-Kugel mit großer Apertur im SWIR mit einer InGaAs-Infrarotkamera.
Published in:
Technisches Messen, 2022, v. 89, n. 1, p. 43, doi. 10.1515/teme-2021-0111
By:
- König, Sebastian;
- Müller, Ingmar;
- Taubert, Richard D.
Publication type:
Article
Cap layer effect in DC and RF characteristics of InP based n-p-n metamorphic δ-doped heterojunction bipolar transistor.
Published in:
International Journal of Electronics Letters, 2022, v. 10, n. 3, p. 308, doi. 10.1080/21681724.2021.1941280
By:
- Jena, M. R.;
- Diwarkar, A.;
- Panda, A. K.;
- Dash, G. N.
Publication type:
Article
Optically pumped lasing in a rolled-up dot-in-a-well (DWELL) microtube via the support of Au pad.
Published in:
Applied Physics B: Lasers & Optics, 2018, v. 124, n. 2, p. 0, doi. 10.1007/s00340-018-6895-z
By:
- Chai, Zhaoer;
- Wang, Qi;
- Cao, Jiawei;
- Mao, Guoming;
- Liu, Hao;
- Ren, Xiaomin;
- Maleev, Nikolai A.;
- Vasil’ev, Alexey P.;
- Zhukov, Alexey E.;
- Ustinov, Victor M.
Publication type:
Article
An open-path tunable diode laser absorption spectrometer for detection of carbon dioxide at the Bonanza Creek Long-Term Ecological Research Site near Fairbanks, Alaska.
Published in:
Applied Physics B: Lasers & Optics, 2017, v. 123, n. 9, p. 1, doi. 10.1007/s00340-017-6814-8
By:
- Bailey, D.;
- Adkins, Erin;
- Miller, J.
Publication type:
Article
Diode-pumped ultrafast Yb:KGW laser with 56 fs pulses and multi-100 kW peak power based on SESAM and Kerr-lens mode locking.
Published in:
Applied Physics B: Lasers & Optics, 2017, v. 123, n. 4, p. 1, doi. 10.1007/s00340-017-6701-3
By:
- Akbari, R.;
- Fedorova, K.;
- Rafailov, E.;
- Major, A.
Publication type:
Article
Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk lasers.
Published in:
Applied Physics B: Lasers & Optics, 2012, v. 106, n. 3, p. 605, doi. 10.1007/s00340-011-4697-7
By:
- Schättiger, F.;
- Bauer, D.;
- Demsar, J.;
- Dekorsy, T.;
- Kleinbauer, J.;
- Sutter, D.;
- Puustinen, J.;
- Guina, M.
Publication type:
Article
Chip-scale high-peak-power semiconductor/solid-state vertically integrated laser.
Published in:
Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-33528-x
By:
- Yue, Jianglin;
- Tanaka, Kenji;
- Hirano, Go;
- Yonezawa, Gen;
- Shimizu, Misaki;
- Iwakoshi, Yasunobu;
- Tobita, Hiroshi;
- Koda, Rintaro;
- Higa, Yasutaka;
- Watanabe, Hideki;
- Yanashima, Katsunori;
- Kamata, Masanao
Publication type:
Article
Molecular‐Beam Epitaxy Growth and Properties of AlGaAs Nanowires with InGaAs Nanostructures.
Published in:
Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 7, p. 1, doi. 10.1002/pssr.202200056
By:
- Reznik, Rodion R.;
- Ilkiv, Igor V.;
- Kotlyar, Konstantin P.;
- Gridchin, Vladislav O.;
- Bondarenko, Dariya N.;
- Lendyashova, Vera V.;
- Ubyivovk, Evgenii V.;
- Dragunova, Anna S.;
- Kryzhanovskaya, Natalia V.;
- Cirlin, George E.
Publication type:
Article
Locally‐Strain‐Induced Heavy‐Hole‐Band Splitting Observed in Mobility Spectrum of p‐Type InAs Grown on GaAs.
Published in:
Physica Status Solidi - Rapid Research Letters, 2020, v. 14, n. 4, p. 1, doi. 10.1002/pssr.201900604
By:
- Wróbel, Jarosław;
- Umana-Membreno, Gilberto A.;
- Boguski, Jacek;
- Sztenkiel, Dariusz;
- Michałowski, Paweł Piotr;
- Martyniuk, Piotr;
- Faraone, Lorenzo;
- Wróbel, Jerzy;
- Rogalski, Antoni
Publication type:
Article
Tb/Ni/TiN Stack for Ultralow Contact Resistive Ni‐Tb‐InGaAs Alloy to n‐In0.53Ga0.47As Layer.
Published in:
Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 7, p. 1, doi. 10.1002/pssr.201800131
By:
- Li, Meng;
- Lee, Jeongchan;
- Oh, Jungwoo;
- Lee, Hi‐Deok
Publication type:
Article
High-speed three-dimensional reciprocal-space mapping during molecular beam epitaxy growth of InGaAs.
Published in:
Journal of Applied Crystallography, 2012, v. 45, n. 5, p. 1046, doi. 10.1107/S0021889812036175
By:
- Hu, Wen;
- Suzuki, Hidetoshi;
- Sasaki, Takuo;
- Kozu, Miwa;
- Takahasi, Masamitu
Publication type:
Article
Effect of tunneling injection on the modulation response of quantum dot lasers.
Published in:
Iranian Journal of Physics Research, 2014, v. 13, n. 4, p. 86
By:
- Yekta kiya, Y.;
- Rajaei, E.;
- Danesh, Z.
Publication type:
Article
Towards 3D characterisation of site-controlled InGaAs pyramidal QDs at the nanoscale.
Published in:
Journal of Materials Science, 2022, v. 57, n. 34, p. 16383, doi. 10.1007/s10853-022-07654-2
By:
- Holsgrove, Kristina M.;
- O'Reilly, Tamsin I.;
- Varo, Simone;
- Gocalinska, Agnieszka;
- Juska, Gediminas;
- Kepaptsoglou, Demie M.;
- Pelucchi, Emanuele;
- Arredondo, Miryam
Publication type:
Article
Components distribution in Cu(In,Ga)Se films prepared by selenization of evaporated metallic precursors on bare and ITO-coated glass substrates.
Published in:
Journal of Materials Science, 2012, v. 47, n. 4, p. 1836, doi. 10.1007/s10853-011-5970-1
By:
- Guillén, C.;
- Herrero, J.
Publication type:
Article
Research of In0.48Ga0.52P/GaAs Heterojunction Interface Properties Improvement Deposited by MOCVD.
Published in:
Crystal Research & Technology, 2025, v. 60, n. 3, p. 1, doi. 10.1002/crat.202400198
By:
- Yu, Dayang;
- Qiu, Junjie;
- Liang, Kang;
- Huang, Yicang;
- Shen, Wei
Publication type:
Article
Tilt investigation of In(Al,Ga)As metamorphic buffer layers on GaAs (001) substrate: A novel technique for tilt determination.
Published in:
Crystal Research & Technology, 2016, v. 51, n. 12, p. 723, doi. 10.1002/crat.201600149
By:
- Kumar, Rahul;
- Biswas, Dhrubes
Publication type:
Article
Interfacial X-ray photospectrometry study of In0.53Ga0.47As under different passivation treatments for metal oxide semiconductor field effect transistor devices.
Published in:
Micro & Nano Letters (Wiley-Blackwell), 2013, v. 8, n. 11, p. 836, doi. 10.1049/mnl.2013.0560
By:
- Razip Wee, M. F. Mohd;
- Dehzangi, A.;
- Wichmann, N.;
- Bollaert, S.;
- Majlis, Burhanuddin Yeop
Publication type:
Article
Kinetics of Spontaneous Formation of Core-Shell Structure in (In,Ga)As Nanowires.
Published in:
Technical Physics Letters, 2024, v. 50, n. 2, p. 164, doi. 10.1134/S1063785023170224
By:
- Sibirev, N. V.;
- Berdnikov, Y. S.;
- Shtrom, I. V.;
- Ubyivovk, E. V.;
- Reznik, R. R.;
- Cirlin, G. E.
Publication type:
Article
Two-State Lasing in Injection Microdisks with InAs/InGaAs Quantum Dots.
Published in:
Technical Physics Letters, 2023, v. 49, p. S330, doi. 10.1134/S1063785023010236
By:
- Makhov, I. S.;
- Beckman, A. A.;
- Kulagina, M. M.;
- Guseva, Yu. A.;
- Kryzhanovskaya, N. V.;
- Nadtochiy, A. M.;
- Maximov, M. V.;
- Zhukov, A. E.
Publication type:
Article
Mushroom Mesa Structure for InAlAs–InGaAs Avalanche Photodiodes.
Published in:
Technical Physics Letters, 2023, v. 49, p. S215, doi. 10.1134/S1063785023900819
By:
- Maleev, N. A.;
- Kuzmenkov, A. G.;
- Kulagina, M. M.;
- Vasyl'ev, A. P.;
- Blokhin, S. A.;
- Troshkov, S. I.;
- Nashchekin, A. V.;
- Bobrov, M. A.;
- Blokhin, A. A.;
- Voropaev, K. O.;
- Bugrov, V. E.;
- Ustinov, V. M.
Publication type:
Article
Temperature-Dependent Characteristics of 1.3 μm InAs/InGaAs/GaAs Quantum Dot Ring Lasers.
Published in:
Technical Physics Letters, 2023, v. 49, p. S196, doi. 10.1134/S1063785023900728
By:
- Gordeev, N. Yu.;
- Moiseev, E. I.;
- Fominykh, N. A.;
- Kryzhanovskaya, N. V.;
- Beckman, A. A.;
- Kornyshov, G. O.;
- Zubov, F. I.;
- Shernyakov, Yu. M.;
- Zhukov, A. E.;
- Maximov, M. V.
Publication type:
Article
Investigation of the Photoelectric Characteristics of GaAs Solar Cells with Different InGaAs Quantum Dot Array Positioning in the i-Region.
Published in:
Technical Physics Letters, 2023, v. 49, p. S125, doi. 10.1134/S1063785023900546
By:
- Salii, R. A;
- Mintairov, M. A.;
- Mintairov, S. A.;
- Nakhimovich, M. V.;
- Shvarts, M. Z.;
- Kalyuzhnyy, N. A.
Publication type:
Article
Increasing the Efficiency of Triple-Junction Solar Cells Due to the Metamorphic InGaAs Subcell.
Published in:
Technical Physics Letters, 2023, v. 49, p. S81, doi. 10.1134/S1063785023900431
By:
- Mintairov, M. A.;
- Evstropov, V. V.;
- Mintairov, S. A.;
- Nakhimovich, M. V.;
- Saliy, R. A.;
- Shvarts, M. Z.;
- Kalyuzhniy, N. A.
Publication type:
Article
High-Speed Photodetectors Based on InGaAs/GaAs Quantum Well–Dots.
Published in:
Technical Physics Letters, 2022, v. 48, n. 3, p. 161, doi. 10.1134/S1063785022040186
By:
- Mintairov, S. A.;
- Blokhin, S. A.;
- Kalyuzhnyy, N. A.;
- Maximov, M. V.;
- Maleev, N. A.;
- Nadtochiy, A. M.;
- Salii, R. A.;
- Kryzhanovskaya, N. V.;
- Zhukov, A. E.
Publication type:
Article
Increasing the Optical Power of InGaAs/GaAs Microdisk Lasers Transferred to a Silicon Substrate by Thermal Compression.
Published in:
Technical Physics Letters, 2022, v. 48, n. 2, p. 90, doi. 10.1134/S1063785022030105
By:
- Zubov, F. I.;
- Maksimov, M. V.;
- Kryzhanovskaya, N. V.;
- Moiseev, E. I.;
- Nadtochiy, A. M.;
- Dragunova, A. S.;
- Blokhin, S. A.;
- Vorobiev, A. A.;
- Mozharov, A. M.;
- Mintairov, S. A.;
- Kalyuzhnyy, N. A.;
- Zhukov, A. E.
Publication type:
Article
An Investigation of the Sensitivity of a Microdisk Laser to a Change in the Refractive Index of the Environment.
Published in:
Technical Physics Letters, 2022, v. 48, n. 2, p. 74, doi. 10.1134/S1063785022030063
By:
- Kryzhanovskaya, N. V.;
- Melnichenko, I. A.;
- Bukatin, A. S.;
- Kornev, A. A.;
- Filatov, N. A.;
- Shcherbak, S. A.;
- Lipovskii, A. A.;
- Dragunova, A. S.;
- Kulagina, M. M.;
- Likhachev, A. I.;
- Fetisova, M. V.;
- Reduto, I. V.;
- Maximov, M. V.;
- Zhukov, A. E.
Publication type:
Article
Energy Consumption at High-Frequency Modulation of an Uncooled InGaAs/GaAs/AlGaAs Microdisk Laser.
Published in:
Technical Physics Letters, 2021, v. 47, n. 9, p. 685, doi. 10.1134/S1063785021070142
By:
- Zhukov, A. E.;
- Moiseev, E. I.;
- Nadtochii, A. M.;
- Dragunova, A. S.;
- Kryzhanovskaya, N. V.;
- Kulagina, M. M.;
- Mintairov, S. A.;
- Kalyuzhnyi, N. A.;
- Zubov, F. I.;
- Maksimov, M. V.
Publication type:
Article