Works matching DE "X-ray diffraction"


Results: 5000
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    Epitaxial Growth of ScAlN on (111) Si Via Molecular Beam Epitaxy.

    Published in:
    Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4291, doi. 10.1007/s11664-024-11673-x
    By:
    • Hardy, Matthew T.;
    • Lang, Andrew C.;
    • Hart, James L.;
    • Jin, Eric N.;
    • Nepal, Neeraj;
    • Gokhale, Vikrant J.;
    • Downey, Brian P.;
    • Katzer, D. Scott;
    • Litwin, Peter M.;
    • Sales, Maria Gabriela;
    • Growden, Tyler A.;
    • Wheeler, Virginia D.
    Publication type:
    Article
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