Results
Title

Monolithic Integration of Semi-Transparent and Flexible Integrated Image Sensor Array with a-IGZO Thin-Film Transistors (TFTs) and p-i-n Hydrogenated Amorphous Silicon Photodiodes.

Authors

Choi, Donghyeong; Seo, Ji-Woo; Yoon, Jongwon; Yu, Seung Min; Kwon, Jung-Dae; Lee, Seoung-Ki; Kim, Yonghun

Abstract

A novel approach to fabricating a transparent and flexible one-transistor–one-diode (1T-1D) image sensor array on a flexible colorless polyimide (CPI) film substrate is successfully demonstrated with laser lift-off (LLO) techniques. Leveraging transparent indium tin oxide (ITO) electrodes and amorphous indium gallium zinc oxide (a-IGZO) channel-based thin-film transistor (TFT) backplanes, vertically stacked p-i-n hydrogenated amorphous silicon (a-Si:H) photodiodes (PDs) utilizing a low-temperature (10 Jones (biased at −1 V) at a wavelength of 470 nm, respectively. The good mechanical durability and robustness of the flexible image sensor arrays enable them to be attached to a curved surface with bending radii of 20, 15, 10, and 5 mm and 1000 bending cycles, respectively. These studies show the significant promise of utilizing highly flexible and rollable active-matrix technology for the purpose of dynamically sensing optical signals in spatial applications.

Subjects

INDIUM gallium zinc oxide; THIN film transistors; HYDROGENATED amorphous silicon; SENSOR arrays; IMAGE sensors; PHOTODIODES; TRANSISTORS

Publication

Nanomaterials (2079-4991), 2023, Vol 13, Issue 21, p2886

ISSN

2079-4991

Publication type

Academic Journal

DOI

10.3390/nano13212886