Works matching Random Access Memory

Results: 2209

聚乙烯咔唑共价修饰黑磷纳米片及其在叠层阻变存储器中的应用.

Published in:

Journal of Functional Polymers, 2023, v. 36, n. 1, p. 31, doi. 10.14133/j.cnki.1008-9357.20220919001

By:

郑庭安;
顾敏超;
孙方成;
陈彧

Publication type:

Article

Bi‐Stable Resistance Generation Mechanism for Oxygenated Amorphous Carbon‐Based Resistive Random‐Access Memory.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101083

By:

Jin, Soo‐Min;
Kim, Hea‐Jee;
Woo, Dae‐Seong;
Jung, Sung‐Mok;
Kim, Dong‐Eon;
Shim, Tae‐Hun;
Park, Jea‐Gun

Publication type:

Article

Resistive Random Access Memory: Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High- k Spacer Structure (Adv. Electron. Mater. 9/2017).

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 9, p. n/a, doi. 10.1002/aelm.201770041

By:

Tseng, Yi‐Ting;
Chen, Po‐Hsun;
Chang, Ting‐Chang;
Chang, Kuan‐Chang;
Tsai, Tsung‐Ming;
Shih, Chih‐Cheng;
Huang, Hui‐Chun;
Yang, Cheng‐Chi;
Lin, Chih‐Yang;
Wu, Cheng‐Hsien;
Zheng, Hao‐Xuan;
Zhang, Shengdong;
Sze, Simon M.

Publication type:

Article

Embedded Memory Hierarchy Exploration Based on Magnetic Random Access Memory.

Published in:

Journal of Low Power Electronics & Applications, 2014, v. 4, n. 3, p. 214, doi. 10.3390/jlpea4030214

By:

Cargnini, Luís Vitório;
Torres, Lionel;
Brum, Raphael Martins;
Senni, Sophiane;
Sassatelli, Gilles

Publication type:

Article

Indium Diffusion Behavior and Application in HfO2‐Based Conductive Bridge Random Access Memory.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 11, p. N.PAG, doi. 10.1002/pssr.201900285

By:

Zheng, Hao-Xuan;
Shih, Chih-Cheng;
Chang, Ting-Chang;
Shih, Lin-Yi;
Shih, Yao-Kai;
Tseng, Yi-Ting;
Chen, Wen-Chung;
Huang, Wei-Chen;
Yang, Chih-Cheng;
Wu, Pei-Yu;
Huang, Hui-Chun;
Tsai, Tsung-Ming;
Sze, Simon M.

Publication type:

Article

Temperature Dependence of Electrical Properties and Conduction Mechanism of SiNx‐Based Resistive Random Access Memory.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 21, p. 1, doi. 10.1002/pssa.202300398

By:

Bai, Yifan;
Duan, Yiwei;
Qian, Mengyi;
Zhu, Shilong;
Ma, Xiaohua;
Yang, Yintang;
Gao, Haixia

Publication type:

Article

柔性阻变存储器材料研究进展.

Published in:

Journal of Materials Engineering / Cailiao Gongcheng, 2020, v. 48, n. 7, p. 81, doi. 10.11868/j.issn.1001-4381.2019.001298

By:

唐大秀;
刘金云;
王玉欣;
尚杰;
刘钢;
刘宜伟;
张辉;
陈清明;
刘翔;
李润伟

Publication type:

Article

Fabrication of Resistive Random Access Memory by Atomic Force Microscope Local Anodic Oxidation.

Published in:

NANO (1793-2920), 2015, v. 10, n. 2, p. -1, doi. 10.1142/S1793292015500289

By:

Tsai, Jeff T.H.;
Hsu, Chia-Yun;
Hsu, Chia-Hsiang;
Yang, Chu-Shou;
Lin, Tai-Yuan

Publication type:

Article

Fabrication of a Cu‐Cone‐Shaped Cation Source Inserted Conductive Bridge Random Access Memory and Its Improved Switching Reliability.

Published in:

Advanced Functional Materials, 2019, v. 29, n. 8, p. N.PAG, doi. 10.1002/adfm.201806278

By:

Kim, Hae Jin;
Park, Tae Hyung;
Yoon, Kyung Jean;
Seong, Won Mo;
Jeon, Jeong Woo;
Kwon, Young Jae;
Kim, Yumin;
Kwon, Dae Eun;
Kim, Gil Seop;
Ha, Tae Jung;
Kim, Soo Gil;
Yoon, Jung Ho;
Hwang, Cheol Seong

Publication type:

Article

In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory.

Published in:

Materials (1996-1944), 2020, v. 13, n. 16, p. 3532, doi. 10.3390/ma13163532

By:

Ou, Qiao-Feng;
Xiong, Bang-Shu;
Yu, Lei;
Wen, Jing;
Wang, Lei;
Tong, Yi

Publication type:

Article

Quantum Dot Floating Gate Nonvolatile Random Access Memory Using Ge Quantum Dot Channel for Faster Erasing.

Published in:

International Journal of High Speed Electronics & Systems, 2018, v. 27, n. 1/2, p. N.PAG, doi. 10.1142/S0129156418400062

By:

Lingalugari, Murali;
Heller, Evan;
Parthasarathy, Barath;
Chandy, John;
Jain, Faquir

Publication type:

Article

Integrated Optical Content Addressable Memories (CAM) and Optical Random Access Memories (RAM) for Ultra-Fast Address Look-Up Operations.

Published in:

Applied Sciences (2076-3417), 2017, v. 7, n. 7, p. 700, doi. 10.3390/app7070700

By:

Vagionas, Christos;
Maniotis, Pavlos;
Pitris, Stelios;
Miliou, Amalia;
Pleros, Nikos

Publication type:

Article

Two‐transistor and two‐magnetic‐tunnel‐junction multi‐level cell structured spin‐transfer torque magnetic random access memory with optimisations on power and reliability.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 1, p. 104, doi. 10.1049/el.2015.2965

By:

Tao, Zihao;
Jia, Ze

Publication type:

Article

Self‐judgement flip coding for resistive random access memory.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 1, p. 27, doi. 10.1049/el.2015.2332

By:

Xiang, Zhongyuan;
Zhang, Feng

Publication type:

Article

铅基卤素钙钛矿阻变式存储器研究进展.

Published in:

Electronic Components & Materials, 2022, v. 41, n. 1, p. 19, doi. 10.14106/j.cnki.1001-2028.2022.1576

By:

曾凡菊;
谭永前;
胡伟;
唐孝生;
尹海峰

Publication type:

Article

Lifetime Improvement of 28 nm Resistive Random Access Memory Chip by Machine Learning‐Assisted Prediction Model Collaborated with Resurrection Algorithm.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300504

By:

Zheng, Xu;
Wu, Lizhou;
Xie, Yuanlu;
Lai, Jinru;
Sun, Wenxuan;
Yu, Jie;
Dong, Danian;
Yu, Zhaoan;
Xue, Xiaoyong;
Chen, Bing;
Yang, Yan;
Xu, Xiaoxin;
Liu, Qi;
Liu, Ming

Publication type:

Article

Accurate Weight Update in an Electrochemical Random‐Access Memory Based Cross‐Point Array Using Channel‐High Half‐Bias Scheme for Deep Learning Accelerator.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 12, p. 1, doi. 10.1002/aelm.202300476

By:

Kim, Seungkun;
Son, Jeonghoon;
Kwak, Hyunjeong;
Kim, Seyoung

Publication type:

Article

Resistive Random Access Memory Behaviors in Organic–Inorganic Hybrid Ultra‐Thin Films.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200432

By:

Kim, Min Ju;
Martinez, Alba;
Jeong, Jaejoong;
Kim, Seongho;
Hwang, Wan Sik;
Cho, Byung Jin

Publication type:

Article

Multi‐Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu‐Cone Structure Embedded Conductive Bridge Random Access Memory.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100209

By:

Kim, Hae Jin;
Kim, Jihun;
Park, Tae Gyun;
Yoon, Jung Ho;
Hwang, Cheol Seong

Publication type:

Article

Depth Gradient Reduced Graphene Oxide Layer via Intense Pulsed Light Annealing Process for the Flexible Resistive Random Access Memory Device.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202101018

By:

Park, Jong‐Whi;
Moon, Chang‐Jin;
Ju, Young‐Min;
Jang, Yong‐Rae;
Park, Simon S.;
Kim, Hak‐Sung

Publication type:

Article

Application of Resistive Random Access Memory in Hardware Security: A Review.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 12, p. 1, doi. 10.1002/aelm.202100536

By:

Rajendran, Gokulnath;
Banerjee, Writam;
Chattopadhyay, Anupam;
Aly, Mohamed M. Sabry

Publication type:

Article

Copolymer‐Based Flexible Resistive Random Access Memory Prepared by Initiated Chemical Vapor Deposition Process.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 10, p. 1, doi. 10.1002/aelm.202100375

By:

Jeong, Jaejoong;
Kim, Min Ju;
Hwang, Wan Sik;
Cho, Byung Jin

Publication type:

Article

Phase Change Random Access Memory for Neuro‐Inspired Computing.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202001241

By:

Wang, Qiang;
Niu, Gang;
Ren, Wei;
Wang, Ruobing;
Chen, Xiaogang;
Li, Xi;
Ye, Zuo‐Guang;
Xie, Ya‐Hong;
Song, Sannian;
Song, Zhitang

Publication type:

Article

Field‐Induced Ferroelectric Hf1‐xZrxO2 Thin Films for High‐k Dynamic Random Access Memory.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000631

By:

Hyun, Seung Dam;
Park, Hyeon Woo;
Park, Min Hyuk;
Lee, Young Hwan;
Lee, Yong Bin;
Kim, Beom Yong;
Kim, Ho Hyun;
Kim, Baek Su;
Hwang, Cheol Seong

Publication type:

Article

In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000209

By:

Maikap, Siddheswar;
Banerjee, Writam

Publication type:

Article

Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000066

By:

Huang, Wei‐Chen;
Zheng, Hao‐Xuan;
Chen, Po‐Hsun;
Chang, Ting‐Chang;
Tan, Yung‐Fang;
Lin, Shih‐Kai;
Zhang, Yong‐Ci;
Jin, Fu‐Yuan;
Wu, Chung‐Wei;
Yeh, Yu‐Hsuan;
Chou, Sheng‐Yao;
Huang, Hui‐Chun;
Chen, Yan‐Wen;
Sze, Simon M.

Publication type:

Article

Interface Engineering via MoS2 Insertion Layer for Improving Resistive Switching of Conductive‐Bridging Random Access Memory.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800747

By:

Wu, Facai;
Si, Shuyao;
Cao, Peng;
Wei, Wei;
Zhao, Xiaolong;
Shi, Tuo;
Zhang, Xumeng;
Ma, Jianwei;
Cao, Rongrong;
Liao, Lei;
Tseng, Tseung‐Yuen;
Liu, Qi

Publication type:

Article

Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High- k Spacer Structure.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 9, p. n/a, doi. 10.1002/aelm.201700171

By:

Tseng, Yi‐Ting;
Chen, Po‐Hsun;
Chang, Ting‐Chang;
Chang, Kuan‐Chang;
Tsai, Tsung‐Ming;
Shih, Chih‐Cheng;
Huang, Hui‐Chun;
Yang, Cheng‐Chi;
Lin, Chih‐Yang;
Wu, Cheng‐Hsien;
Zheng, Hao‐Xuan;
Zhang, Shengdong;
Sze, Simon M.

Publication type:

Article

Synergistic Effects of Total Ionizing Dose and Single-Event Upset in 130 nm 7T Silicon-on-Insulator Static Random Access Memory.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 15, p. 2997, doi. 10.3390/electronics13152997

By:

Zhang, Zheng;
Guo, Gang;
Wang, Linfei;
Xiao, Shuyan;
Chen, Qiming;
Gao, Linchun;
Wang, Chunlin;
Li, Futang;
Zhang, Fuqiang;
Zhao, Shuyong;
Liu, Jiancheng

Publication type:

Article

Pre-Emphasis Pulse Design for Random-Access Memory.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 12, p. 1454, doi. 10.3390/electronics10121454

By:

Sugiura, Yoshihiro;
Tanzawa, Toru

Publication type:

Article

Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) Based Ternary Combinational Logic Circuits.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 1, p. 79, doi. 10.3390/electronics10010079

By:

Zahoor, Furqan;
Hussin, Fawnizu Azmadi;
Khanday, Farooq Ahmad;
Ahmad, Mohamad Radzi;
Mohd Nawi, Illani;
Ooi, Chia Yee;
Rokhani, Fakhrul Zaman

Publication type:

Article

One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 12, p. 2134, doi. 10.3390/electronics9122134

By:

Yoon, Young Jun;
Lee, Jae Sang;
Kim, Dong-Seok;
Lee, Sang Ho;
Kang, In Man

Publication type:

Article

Scaling the Equivalent Oxide Thickness by Employing a TiO2 Thin Film on a ZrO2–Al2O3-Based Dielectric for Further Scaling of Dynamic Random Access Memory.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 10, p. 1, doi. 10.1002/pssr.201900282

By:

Soon Hyung Cha;
Cheol Hyun An;
Seong Tak Cho;
Dong-Gun Kim;
Dae Seon Kwon;
Jun Il Lim;
Woojin Jeon;
Cheol Seong Hwang

Publication type:

Article

Overview of Resistive Random Access Memory (RRAM): Materials, Filament Mechanisms, Performance Optimization, and Prospects.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 9, p. N.PAG, doi. 10.1002/pssr.201900073

By:

Wang, Hong;
Yan, Xiaobing

Publication type:

Article

Bipolar Switching Properties of Bilayer V2O5/Sm2O3 Thin-film Resistive Random Access Memory Device Prepared by Sputtering Technology.

Published in:

Sensors & Materials, 2018, v. 30, n. 4, Part 2, p. 933, doi. 10.18494/SAM.2018.1796

By:

Jian-Yang Lin;
Kuang-Yao Wu;
Kai-Huang Chen;
Chien-Min Cheng;
Cheng-Ying Li

Publication type:

Article

Resistive Switching Properties of Samarium Oxide Resistive Random Access Memories.

Published in:

Sensors & Materials, 2018, v. 30, n. 3,Part 1, p. 471, doi. 10.18494/SAM.2018.1766

By:

Chien-Min Cheng;
Kai-Huang Chen;
Fuh-Cheng Jong;
Mei-Li Chen;
Hsuan-Hung Li;
Han-Chin Chen;
Po-Yu Hsieh

Publication type:

Article

Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing.

Published in:

Nanomaterials (2079-4991), 2024, v. 14, n. 2, p. 179, doi. 10.3390/nano14020179

By:

Lee, Sang Ho;
Park, Jin;
Yoon, Young Jun;
Kang, In Man

Publication type:

Article

Sol–Gel-Processed Y 2 O 3 –Al 2 O 3 Mixed Oxide-Based Resistive Random-Access-Memory Devices.

Published in:

Nanomaterials (2079-4991), 2023, v. 13, n. 17, p. 2462, doi. 10.3390/nano13172462

By:

Kim, Hae-In;
Lee, Taehun;
Cho, Yoonjin;
Lee, Sangwoo;
Lee, Won-Yong;
Kim, Kwangeun;
Jang, Jaewon

Publication type:

Article

Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO X :SiO 2 Thin Films on Resistive Random Access Memory Devices.

Published in:

Nanomaterials (2079-4991), 2023, v. 13, n. 15, p. 2179, doi. 10.3390/nano13152179

By:

Chen, Kai-Huang;
Cheng, Chien-Min;
Wang, Na-Fu;
Kao, Ming-Cheng

Publication type:

Article

Tunable Multilevel Data Storage Bioresistive Random Access Memory Device Based on Egg Albumen and Carbon Nanotubes.

Published in:

Nanomaterials (2079-4991), 2021, v. 11, n. 8, p. 2085, doi. 10.3390/nano11082085

By:

Wang, Lu;
Yang, Tianyu;
Wen, Dianzhong

Publication type:

Article

A Monolithic 3-Dimensional Static Random Access Memory Containing a Feedback Field Effect Transistor.

Published in:

Micromachines, 2022, v. 13, n. 10, p. 1625, doi. 10.3390/mi13101625

By:

Oh, Jong Hyeok;
Yu, Yun Seop

Publication type:

Article

The Spectral Response of the Dual Microdisk Resonator Based on BaTiO 3 Resistive Random Access Memory.

Published in:

Micromachines, 2022, v. 13, n. 8, p. 1175, doi. 10.3390/mi13081175

By:

Chuang, Ricky Wenkuei;
Liu, Bo-Liang;
Huang, Cheng-Liang

Publication type:

Article

Multiphysics Simulation of Crosstalk Effect in Resistive Random Access Memory with Different Metal Oxides.

Published in:

Micromachines, 2022, v. 13, n. 2, p. N.PAG, doi. 10.3390/mi13020266

By:

Xie, Hao;
Hu, Jun;
Wang, Zhili;
Hu, Xiaohui;
Liu, Hong;
Qi, Wei;
Zhang, Shuo

Publication type:

Article

Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM).

Published in:

Micromachines, 2021, v. 12, n. 11, p. 1288, doi. 10.3390/mi12111288

By:

Zahoor, Furqan;
Hussin, Fawnizu Azmadi;
Khanday, Farooq Ahmad;
Ahmad, Mohamad Radzi;
Mohd Nawi, Illani

Publication type:

Article

Analysis of Leakage Current of HfO 2 /TaO x -Based 3-D Vertical Resistive Random Access Memory Array.

Published in:

Micromachines, 2021, v. 12, n. 6, p. 614, doi. 10.3390/mi12060614

By:

Chen, Zhisheng;
Song, Renjun;
Huo, Qiang;
Ren, Qirui;
Zhang, Chenrui;
Li, Linan;
Zhang, Feng

Publication type:

Article

Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory.

Published in:

Micromachines, 2019, v. 10, n. 5, p. 281, doi. 10.3390/mi10050281

By:

Oh, Seung Ik;
Im, In Hyuk;
Yoo, Chanyoung;
Ryu, Sung Yeon;
Kim, Yong;
Choi, Seok;
Eom, Taeyong;
Hwang, Cheol Seong;
Choi, Byung Joon

Publication type:

Article

Effects of Sm2O3 and V2O5 Film Stacking on Switching Behaviors of Resistive Random Access Memories.

Published in:

Crystals (2073-4352), 2019, v. 9, n. 6, p. 318, doi. 10.3390/cryst9060318

By:

Lin, Jian-Yang;
Wu, Kuang-Yao;
Chen, Kai-Huang

Publication type:

Article

An Agent-Based Fuzzy Collaborative Intelligence Approach for Predicting the Price of a Dynamic Random Access Memory (DRAM) Product.

Published in:

Algorithms, 2012, v. 5, n. 2, p. 304, doi. 10.3390/a5020304

By:

Chen, Toly

Publication type:

Article

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing.

Published in:

Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03775-y

By:

Zahoor, Furqan;
Hussin, Fawnizu Azmadi;
Isyaku, Usman Bature;
Gupta, Shagun;
Khanday, Farooq Ahmad;
Chattopadhyay, Anupam;
Abbas, Haider

Publication type:

Article

Rapid synthesis of gallium oxide resistive random access memory by atomic force microscopy local anodic oxidation.

Published in:

Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 8, p. 554, doi. 10.1049/el.2013.0639

By:

Tsai, J.T.H.;
Hsu, Chia‐Hsiang;
Hsu, Chia‐Yun;
Yang, Chu‐Shou

Publication type:

Article