Works matching DE "DYNAMIC random access memory"
Results: 262
Transient Negative Capacitance Effect in Atomic‐Layer‐Deposited Al<sub>2</sub>O<sub>3</sub>/Hf<sub>0.3</sub>Zr<sub>0.7</sub>O<sub>2</sub> Bilayer Thin Film.
- Published in:
- Advanced Functional Materials, 2019, v. 29, n. 17, p. N.PAG, doi. 10.1002/adfm.201808228
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- Article
Applying PSO-based BPN for predicting the yield rate of DRAM modules produced using defective ICs.
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- International Journal of Advanced Manufacturing Technology, 2010, v. 49, n. 9-12, p. 987, doi. 10.1007/s00170-009-2448-2
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- Article
Proposed Design of 1 KB Memory Array Structure for Cache Memories.
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- Wireless Personal Communications, 2019, v. 109, n. 2, p. 823, doi. 10.1007/s11277-019-06593-7
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- Article
Using DRAM Buffer to Reduce Persistence and Consistence Overheads of Persistent Memory.
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- Wireless Personal Communications, 2018, v. 102, n. 4, p. 3879, doi. 10.1007/s11277-018-5418-x
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- Article
Holding State Performance Amelioration by Exploitation of NMOS Body Effect in 1T DRAM Cells.
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- Wireless Personal Communications, 2018, v. 99, n. 1, p. 47, doi. 10.1007/s11277-017-5036-z
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- Article
Atomic‐Scale Study of Dead Layers in Epitaxial Perovskite Dielectric Thin Films with Oxide and Metal Top Electrodes.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300773
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- Article
3‐Masks‐Processed Sub‐100 nm Amorphous InGaZnO Thin‐Film Transistors for Monolithic 3D Capacitor‐Less Dynamic Random Access Memories.
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- Advanced Electronic Materials, 2023, v. 9, n. 8, p. 1, doi. 10.1002/aelm.202300150
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- Article
The Contrasting Impacts of the Al<sub>2</sub>O<sub>3</sub> and Y<sub>2</sub>O<sub>3</sub> Insertion Layers on the Crystallization of ZrO<sub>2</sub> Films for Dynamic Random Access Memory Capacitors (Adv. Electron. Mater. 7/2022).
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202270030
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- Article
The Contrasting Impacts of the Al<sub>2</sub>O<sub>3</sub> and Y<sub>2</sub>O<sub>3</sub> Insertion Layers on the Crystallization of ZrO<sub>2</sub> Films for Dynamic Random Access Memory Capacitors.
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- Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202200099
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- Article
ULTRARAM: A Low‐Energy, High‐Endurance, Compound‐Semiconductor Memory on Silicon.
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- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101103
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- Publication type:
- Article
Field‐Induced Ferroelectric Hf<sub>1‐</sub><sub>x</sub>Zr<sub>x</sub>O<sub>2</sub> Thin Films for High‐k Dynamic Random Access Memory.
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- Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000631
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- Article
Universal Memory Characteristics and Degradation Features of ZrO<sub>2</sub>‐Based Bipolar Resistive Memory.
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- Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000368
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- Article
One‐Transistor Memory Compatible with Si‐Based Technology with Multilevel Applications.
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- Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900262
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- Article
A Memory Structure with Different Control Gates.
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- Advanced Electronic Materials, 2018, v. 4, n. 7, p. 1, doi. 10.1002/aelm.201800186
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- Publication type:
- Article
DRAMSys4.0: An Open-Source Simulation Framework for In-depth DRAM Analyses.
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- International Journal of Parallel Programming, 2022, v. 50, n. 2, p. 217, doi. 10.1007/s10766-022-00727-4
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- Article
Partial-PreSET: Enhancing Lifetime of PCM-Based Main Memory with Fine-Grained SET Operations.
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- International Journal of Parallel Programming, 2018, v. 46, n. 4, p. 736, doi. 10.1007/s10766-017-0527-9
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- Article
DRAMSpec: A High-Level DRAM Timing, Power and Area Exploration Tool.
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- International Journal of Parallel Programming, 2017, v. 45, n. 6, p. 1566, doi. 10.1007/s10766-016-0473-y
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- Article
Asteroid: Scalable Online Memory Diagnostics for Multi-core, Multi-socket Servers.
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- International Journal of Parallel Programming, 2016, v. 44, n. 5, p. 949, doi. 10.1007/s10766-016-0400-2
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- Article
Using SDRAM Memories for High-Performance Accesses to Two-Dimensional Matrices Without Transpose.
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- International Journal of Parallel Programming, 2013, v. 41, n. 2, p. 331, doi. 10.1007/s10766-012-0225-6
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- Article
Managing Data Placement in Memory Systems with Multiple Memory Controllers.
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- International Journal of Parallel Programming, 2012, v. 40, n. 1, p. 57, doi. 10.1007/s10766-011-0178-1
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- Article
Storage Class Memory Based Hybrid Memory System for Practical Remote Sensing.
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- Journal of Coastal Research, 2020, v. 102, p. 254, doi. 10.2112/SI102-031.1
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- Article
Main memory controller with multiple media technologies for big data workloads.
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- Journal of Big Data, 2023, v. 10, n. 1, p. 1, doi. 10.1186/s40537-023-00761-0
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- Article
Amorphous oxide semiconductor for monolithic 3D DRAM: an enabler or passer-by?
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- 2024
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- Product Review
Design of four-state DRAM using novel MOSFETs.
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- International Journal of Electronics Letters, 2018, v. 6, n. 3, p. 249, doi. 10.1080/21681724.2017.1357194
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- Article
A Spintronic 2M/7T Computation-in-Memory Cell.
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- Journal of Low Power Electronics & Applications, 2022, v. 12, n. 4, p. 63, doi. 10.3390/jlpea12040063
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- Article
Towards Integration of a Dedicated Memory Controller and Its Instruction Set to Improve Performance of Systems Containing Computational SRAM.
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- Journal of Low Power Electronics & Applications, 2022, v. 12, n. 1, p. 18, doi. 10.3390/jlpea12010018
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- Article
A Survey of Resource Management for Processing-In-Memory and Near-Memory Processing Architectures.
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- Journal of Low Power Electronics & Applications, 2020, v. 10, n. 4, p. 30, doi. 10.3390/jlpea10040030
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- Publication type:
- Article
Exploration of Sub-V<sub>T</sub> and Near-V<sub>T</sub> 2T Gain-Cell Memories for Ultra-Low Power Applications under Technology Scaling.
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- Journal of Low Power Electronics & Applications, 2013, v. 3, n. 2, p. 54, doi. 10.3390/jlpea3020054
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- Article
Characterization of dynamic random process using optical vortex metrology.
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- Applied Physics B: Lasers & Optics, 2014, v. 116, n. 4, p. 901, doi. 10.1007/s00340-014-5776-3
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- Article
Stabilization of Morphotropic Phase Boundary in Hafnia via Microwave Low‐Temperature Crystallization Process for Next‐Generation Dynamic Random Access Memory Technology.
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- Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 9, p. 1, doi. 10.1002/pssr.202400108
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- Article
Scaling the Equivalent Oxide Thickness by Employing a TiO<sub>2</sub> Thin Film on a ZrO<sub>2</sub>–Al<sub>2</sub>O<sub>3</sub>-Based Dielectric for Further Scaling of Dynamic Random Access Memory.
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- Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 10, p. 1, doi. 10.1002/pssr.201900282
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- Article
Phase Change Materials and Superlattices for Non‐Volatile Memories.
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- Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 4, p. N.PAG, doi. 10.1002/pssr.201900130
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- Article
Electrical Properties of ZrO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/ZrO<sub>2</sub>‐Based Capacitors with TiN, Ru, and TiN/Ru Top Electrode Materials.
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- Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 10, p. N.PAG, doi. 10.1002/pssr.201800356
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- Article
Recent Developments in Spin Transfer Torque MRAM.
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- Physica Status Solidi - Rapid Research Letters, 2017, v. 11, n. 12, p. n/a, doi. 10.1002/pssr.201700163
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- Article
A Hierarchical Cache Architecture-Oriented Cache Management Scheme for Information-Centric Networking.
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- Future Internet, 2025, v. 17, n. 1, p. 17, doi. 10.3390/fi17010017
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- Article
Ag/BST/p-Si MFS Device Production and Characterization.
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- Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2022, v. 47, n. 6, p. 7797, doi. 10.1007/s13369-022-06676-x
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- Article
Asia: chips are down.
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- Asia Weekly, 2008, v. 2, n. 39, p. 24
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- Article
Buffer Management for Colored Packets with Deadlines.
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- Theory of Computing Systems, 2011, v. 49, n. 4, p. 738, doi. 10.1007/s00224-011-9346-3
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- Article
Channel Analysis for a 6.4 Gbs<sup>-1</sup> DDR5 Data Buffer Receiver Front-End.
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- Advances in Radio Science, 2017, v. 15, p. 157, doi. 10.5194/ars-15-157-2017
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- Article
In- and out-plane transport properties of chemical vapor deposited TiO2 anatase films.
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- Journal of Materials Science, 2021, v. 56, n. 17, p. 10458, doi. 10.1007/s10853-021-05955-6
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- Article
固态存储器短周期存取速度动态控制.
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- Computer Measurement & Control, 2018, v. 26, n. 6, p. 65, doi. 10.16526/j.cnki.11-4762/tp.2018.06.017
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- Article
Crosstalk cancelling voltage-mode driver for multi-Gbps parallel DRAM interface.
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- International Journal of Circuit Theory & Applications, 2015, v. 43, n. 9, p. 1175, doi. 10.1002/cta.2003
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- Publication type:
- Article
An in-memory computing architecture based on two-dimensional semiconductors for multiply-accumulate operations.
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- Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-23719-3
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- Article
Asymmetry in electrical properties of Al-doped TiO<sub>2</sub> film with respect to bias voltage.
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- Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 7, p. 410, doi. 10.1002/pssr.201510146
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- Article
RRAMs based on anionic and cationic switching: a short overview.
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- Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 6, p. 501, doi. 10.1002/pssr.201409054
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- Article
Additive advantage in characteristics of MIMCAPs on flexible silicon (100) fabric with release-first process.
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- Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 2, p. 163, doi. 10.1002/pssr.201308209
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- Article
Effect of Repeated Application of Switching Electric Field on Al/Ba<sub>0.9</sub>Sr<sub>0.1</sub>TiO<sub>3</sub>/Pt/Si and Al/Ba<sub>0.3</sub>Sr<sub>0.7</sub>TiO<sub>3</sub>/Pt/Si Thin Films.
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- Journal of Scientific Research, 2023, v. 15, n. 3, p. 721, doi. 10.3329/jsr.v15i3.64209
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- Article
Binocular rivalry produced by temporal frequency differences.
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- Frontiers in Human Neuroscience, 2012, v. 6, p. 1, doi. 10.3389/fnhum.2012.00227
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- Article
FIR Detector Sensitivity, Dynamic Range, and Multiplexing Requirements for the Origins Space Telescope (OST).
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- Journal of Low Temperature Physics, 2018, v. 193, n. 5/6, p. 908, doi. 10.1007/s10909-018-1945-9
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- Publication type:
- Article
The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET.
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- Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-017-2294-3
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- Publication type:
- Article