Works matching DE "SINGLE event effects"
Results: 212
Actinobacillus pleuropneumoniae Eradication with Enrofloxacin May Lead to Dissemination and Long-Term Persistence of Quinolone Resistant Escherichia coli in Pig Herds.
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- Antibiotics (2079-6382), 2020, v. 9, n. 12, p. 910, doi. 10.3390/antibiotics9120910
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- Article
Design and Analysis of SEU Hardened Latch for Low Power and High Speed Applications.
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- Journal of Low Power Electronics & Applications, 2019, v. 9, n. 3, p. 21, doi. 10.3390/jlpea9030021
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- Article
Voltage-Controlled Magnetic Anisotropy MeRAM Bit-Cell over Event Transient Effects.
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- Journal of Low Power Electronics & Applications, 2019, v. 9, n. 2, p. 15, doi. 10.3390/jlpea9020015
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- Article
Radiation Hardened NULL Convention Logic Asynchronous Circuit Design.
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- Journal of Low Power Electronics & Applications, 2015, v. 5, n. 4, p. 216, doi. 10.3390/jlpea5040216
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- Article
Single Event Effect Analysis of SiGe Low Noise Amplifier.
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- Electronics / Elektronika (1450-5843), 2021, v. 25, n. 2, p. 57, doi. 10.53314/ELS2125057B
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- Article
Editor’s Column.
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- Electronics / Elektronika (1450-5843), 2021, v. 25, n. 2, p. 37, doi. 10.53314/ELS2125037K
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- Article
How Personal Transformation Occurs Following a Single Peak Experience in Nature: A Phenomenological Account.
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- Journal of Humanistic Psychology, 2020, v. 60, n. 6, p. 865, doi. 10.1177/0022167817714692
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- Article
Multiple Upsets Induced by Protons in 90-nm SRAMs.
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- Technical Physics Letters, 2018, v. 44, n. 12, p. 1205, doi. 10.1134/S1063785019010097
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- Article
Effect of temperature and single event transient on crosstalk in coupled single‐walled carbon nanotube (SWCNT) bundle interconnects.
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- International Journal of Circuit Theory & Applications, 2021, v. 49, n. 10, p. 3408, doi. 10.1002/cta.3089
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- Article
High Reliability Soft Error Hardened Latch Designfor Nanoscale CMOS Technology using PVT Variation.
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- Wireless Personal Communications, 2023, v. 128, n. 2, p. 1471, doi. 10.1007/s11277-022-10033-4
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- Article
Compact model for fast analytical evaluation of soft error rate in highly scaled memory circuits in space environment.
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- Przegląd Elektrotechniczny, 2016, v. 92, n. 8, p. 48, doi. 10.15199/48.2016.08.13
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- Article
Application of a Laser-Plasma Accelerator to Study Single Event Effects in a Microelectronic Device.
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- Instruments & Experimental Techniques, 2024, v. 67, n. 5, p. 952, doi. 10.1134/S0020441224701641
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- Article
Mechanism and Equivalence of Single Event Effects Induced by 14 MeV Neutrons in High-Speed QDR SRAM.
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- Applied Sciences (2076-3417), 2022, v. 12, n. 19, p. 9685, doi. 10.3390/app12199685
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- Article
Experimental Study on the Space Electrostatic Discharge Effect and the Single Event Effect of SRAM Devices for Satellites.
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- Applied Sciences (2076-3417), 2022, v. 12, n. 14, p. 7129, doi. 10.3390/app12147129
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- Article
Efficacy of Transistor Interleaving in DICE Flip-Flops at a 22 nm FD SOI Technology Node.
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- Applied Sciences (2076-3417), 2022, v. 12, n. 9, p. N.PAG, doi. 10.3390/app12094229
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- Article
Editorial for Special Issue on Reliability Analysis of Electrotechnical Devices.
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- Applied Sciences (2076-3417), 2022, v. 12, n. 8, p. 4086, doi. 10.3390/app12084086
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- Article
Lineal Energy of Proton in Silicon by a Microdosimetry Simulation.
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- Applied Sciences (2076-3417), 2021, v. 11, n. 3, p. 1113, doi. 10.3390/app11031113
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- Article
Investigate the Equivalence of Neutrons and Protons in Single Event Effects Testing: A Geant4 Study.
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- Applied Sciences (2076-3417), 2020, v. 10, n. 9, p. 3234, doi. 10.3390/app10093234
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- Article
Developing a Universal Mirror–mirror Laser Mapping System for Single Event Effect Research.
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- Applied Sciences (2076-3417), 2020, v. 10, n. 9, p. 3018, doi. 10.3390/app10093018
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- Article
Diversity of Growth Responses of Soil Saprobic Fungi to Recurring Heat Events.
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- Frontiers in Microbiology, 2020, v. 11, p. 1, doi. 10.3389/fmicb.2020.01326
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- Article
Relay Protection Device Reliability Assessment Through Radiation, Fault Injection and Fault Tree Analysis.
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- Micromachines, 2025, v. 16, n. 1, p. 69, doi. 10.3390/mi16010069
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- Article
Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer.
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- Micromachines, 2024, v. 15, n. 9, p. 1158, doi. 10.3390/mi15091158
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- Article
Study on Single Event Effects of Enhanced GaN HEMT Devices under Various Conditions.
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- Micromachines, 2024, v. 15, n. 8, p. 950, doi. 10.3390/mi15080950
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- Article
Efficient Modeling of Single Event Transient Effect with Limited Peak Current: Implications for Logic Circuits.
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- Micromachines, 2024, v. 15, n. 7, p. 885, doi. 10.3390/mi15070885
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- Article
Research on Single-Event Burnout Reinforcement Structure of SiC MOSFET.
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- Micromachines, 2024, v. 15, n. 5, p. 642, doi. 10.3390/mi15050642
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- Article
A Method for Automatically Predicting the Radiation-Induced Vulnerability of Unit Integrated Circuits.
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- Micromachines, 2024, v. 15, n. 4, p. 541, doi. 10.3390/mi15040541
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- Article
Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect.
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- Micromachines, 2023, v. 14, n. 8, p. 1620, doi. 10.3390/mi14081620
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- Article
Simulation of Total Ionizing Dose Effects Technique for CMOS Inverter Circuit.
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- Micromachines, 2023, v. 14, n. 7, p. 1438, doi. 10.3390/mi14071438
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- Article
A Single-Event-Hardened Scheme of Phase-Locked Loop Microsystems for Aerospace Applications.
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- Micromachines, 2022, v. 13, n. 12, p. 2102, doi. 10.3390/mi13122102
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- Article
Research on Total Ionizing Dose Effect and Reinforcement of SOI-TFET.
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- Micromachines, 2021, v. 12, n. 10, p. 1232, doi. 10.3390/mi12101232
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- Article
Study on Single Event Effect Simulation in T-Shaped Gate Tunneling Field-Effect Transistors.
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- Micromachines, 2021, v. 12, n. 6, p. 609, doi. 10.3390/mi12060609
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- Article
Effects of Equatorial Plasma Bubbles on Multi-GNSS Signals: A Case Study over South China.
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- Remote Sensing, 2024, v. 16, n. 8, p. 1358, doi. 10.3390/rs16081358
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- Article
Editorial.
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- 2019
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- Publication type:
- Editorial
Modeling Soft Error Propagation in Near-Threshold Combinational Circuits Using Neural Networks.
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- Journal of Electronic Testing, 2019, v. 35, n. 3, p. 401, doi. 10.1007/s10836-019-05796-x
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- Article
Editorial.
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- 2019
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- Publication type:
- Editorial
Single Event Transient Propagation Probabilities Analysis for Nanometer CMOS Circuits.
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- Journal of Electronic Testing, 2019, v. 35, n. 2, p. 163, doi. 10.1007/s10836-019-05791-2
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- Article
Low-Power Resonant Clocking Using Soft Error Robust Energy Recovery Flip-Flops.
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- Journal of Electronic Testing, 2018, v. 34, n. 4, p. 471, doi. 10.1007/s10836-018-5737-6
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- Article
Formal Methods Based Synthesis of Single Event Transient Tolerant Combinational Circuits.
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- Journal of Electronic Testing, 2017, v. 33, n. 5, p. 607, doi. 10.1007/s10836-017-5682-9
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- Article
Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.
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- Journal of Electronic Testing, 2017, v. 33, n. 2, p. 255, doi. 10.1007/s10836-017-5647-z
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- Publication type:
- Article
A Low-Cost Reliability vs. Cost Trade-Off Methodology to Selectively Harden Logic Circuits.
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- Journal of Electronic Testing, 2017, v. 33, n. 1, p. 25, doi. 10.1007/s10836-017-5640-6
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- Article
Instruction-Vulnerability-Factor-Based Reliability Analysis Model for Program Memory.
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- Journal of Electronic Testing, 2016, v. 32, n. 6, p. 695, doi. 10.1007/s10836-016-5624-y
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- Publication type:
- Article
Editorial.
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- 2016
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- Publication type:
- Editorial
A Fast Statistical Soft Error Rate Estimation Method for Nano-scale Combinational Circuits.
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- Journal of Electronic Testing, 2016, v. 32, n. 3, p. 291, doi. 10.1007/s10836-016-5583-3
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- Publication type:
- Article
Layout-based Single Event Mitigation Techniques for Dynamic Logic Circuits.
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- Journal of Electronic Testing, 2016, v. 32, n. 1, p. 97, doi. 10.1007/s10836-015-5559-8
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- Publication type:
- Article
A Built-in Single Event Upsets Detector for Sequential Cells.
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- Journal of Electronic Testing, 2016, v. 32, n. 1, p. 11, doi. 10.1007/s10836-015-5560-2
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- Article
Optimization of a Particles Detection Chain Based on a VCO Structure.
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- Journal of Electronic Testing, 2016, v. 32, n. 1, p. 21, doi. 10.1007/s10836-016-5563-7
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- Article
Double Node Upsets Hardened Latch Circuits.
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- Journal of Electronic Testing, 2015, v. 31, n. 5/6, p. 537, doi. 10.1007/s10836-015-5551-3
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- Article
A High Performance SEU Tolerant Latch.
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- Journal of Electronic Testing, 2015, v. 31, n. 4, p. 349, doi. 10.1007/s10836-015-5533-5
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- Publication type:
- Article
Impact of Total Ionizing Dose on Bulk Built-In Current Sensors with Dynamic Storage Cell.
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- Journal of Electronic Testing, 2015, v. 31, n. 4, p. 411, doi. 10.1007/s10836-015-5537-1
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- Publication type:
- Article
A Novel Built-in Current Sensor for N-WELL SET Detection.
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- Journal of Electronic Testing, 2015, v. 31, n. 4, p. 395, doi. 10.1007/s10836-015-5538-0
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- Publication type:
- Article