Works matching DE "METAL oxide semiconductor field-effect transistor circuits"

Results: 60

A novel low-loss control strategy for bidirectional DC-DC converter.

Published in:

International Journal of Circuit Theory & Applications, 2017, v. 45, n. 11, p. 1801, doi. 10.1002/cta.2373

By:

Dung, Nguyen Anh;
Hieu, Pham Phu;
Hsieh, Yao‐Ching;
Lin, Jing‐Yuan;
Liu, Yu‐Chen;
Chiu, Huang‐Jen

Publication type:

Article

Wide-locking range divide-by-4 injection-locked frequency divider using injection MOSFET DC-biased above threshold region.

Published in:

International Journal of Circuit Theory & Applications, 2016, v. 44, n. 5, p. 968, doi. 10.1002/cta.2116

By:

Jang, Sheng‐Lyang;
Chang, Yu–Tai;
Hsue, Ching‐Wen;
Juang, Miin‐Horng

Publication type:

Article

A systematic class AB state space synthesis method based on MOSFET square law and translinear square-root cells.

Published in:

International Journal of Circuit Theory & Applications, 2015, v. 43, n. 12, p. 241, doi. 10.1002/cta.2054

By:

Surav Yilmaz, Saziye;
Tola, Abdullah T.

Publication type:

Article

Design of ultra low-power RF oscillators based on the inversion coefficient methodology using BSIM6 model.

Published in:

International Journal of Circuit Theory & Applications, 2016, v. 44, n. 2, p. 382, doi. 10.1002/cta.2082

By:

Guitton, G.;
Mangla, A.;
Chalkiadaki, M.‐A.;
Fadhuile, F.;
Taris, T.;
Enz, C.

Publication type:

Article

A FinFET SRAM cell design with BTI robustness at high supply voltages and high yield at low supply voltages.

Published in:

International Journal of Circuit Theory & Applications, 2015, v. 43, n. 12, p. 49, doi. 10.1002/cta.2057

By:

Ebrahimi, Behzad;
Asadpour, Reza;
Afzali‐Kusha, Ali;
Pedram, Massoud

Publication type:

Article

0.5-V bulk-driven OTA and its applications.

Published in:

International Journal of Circuit Theory & Applications, 2015, v. 43, n. 2, p. 187, doi. 10.1002/cta.1932

By:

Kulej, Tomasz

Publication type:

Article

Analysis and Implementation of an Interleaved ZVS Converter with High Input Voltage.

Published in:

International Journal of Circuit Theory & Applications, 2013, v. 41, n. 9, p. 924, doi. 10.1002/cta.830

By:

Lin, B. R.;
Chao, C. H.

Publication type:

Article

Simulation of Solar Charge Controller Module with Current Backflow Protection.

Published in:

Pertanika Journal of Science & Technology, 2025, v. 33, n. 2, p. 639, doi. 10.47836/pjst.33.2.05

By:

Aimi Dalila Azhar;
Weng Ho Yew;
Akmal Zaini Arsad;
Azrul Ghazali;
Fazrena Azlee Hamid;
Ahmad Wafi Mahmood Zuhdi

Publication type:

Article

Low‐temperature SOI SiGe/Si superlattice FinFET with omega‐shaped channel and self‐allied silicide for 3D sequential IC.

Published in:

Electronics Letters (Wiley-Blackwell), 2024, v. 60, n. 21, p. 1, doi. 10.1049/ell2.70026

By:

Qin, Xu‐Lei;
Sang, Guan‐Qiao;
Cao, Lei;
Li, Qing‐Kun;
Jiang, Ren‐Jie;
Wei, Yan‐Zhao;
Li, Jun‐Feng;
Yao, Jia‐Xin;
Zhang, Mei‐He;
Zhang, Qing‐Zhu;
Yin, Hua‐Xiang

Publication type:

Article

NMOS only Schmitt trigger circuit for NBTI resilient CMOS circuits.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 14, p. 868, doi. 10.1049/el.2018.0546

By:

Shah, A. P.;
Yadav, N.;
Beohar, A.;
Vishvakarma, S. K.

Publication type:

Article

Design of circuit driver for display-body used in solid volumetric true 3D display.

Published in:

Chinese Journal of Liquid Crystal & Displays, 2015, v. 30, n. 2, p. 263, doi. 10.3788/YJYXS20153002.0263

By:

ZHANG Ying-song;
LIANG Jian-tian;
HAN Dong;
LIU Zhi-min;
FANG Yong;
LV Guo-qiang

Publication type:

Article

ПОСЛІДОВНЕ З'ЄДНАННЯ РЕЗОНАНСНИХ ІНВЕРТОРІВ НАПРУГИ ВИСОКОЧАСТОТНИХ УСТАНОВОК ІНДУКЦІЙНОГО НАГРІВУ

Published in:

Technical Electrodynamics / Tekhnichna Elektrodynamika, 2018, n. 4, p. 70, doi. 10.15407/techned2018.04.070

By:

Гуцалюк, В. Я.;
Юрченко, О. М.;
Зубков, І. С.;
Пазенко, В. П.

Publication type:

Article

Investigations of Hot-carrier-induced Degradation for 700 V n-LDMOS Transistor Under Different Stress Conditions.

Published in:

IETE Journal of Research, 2013, v. 59, n. 4, p. 410, doi. 10.4103/0377-2063.118061

By:

Chunwei Zhang;
Siyang Liu;
Weifeng Sun;
Tingting Huang;
Chaohui Yu

Publication type:

Article

New pixel driving circuit using self-discharging compensation method for high-resolution OLED micro displays on a silicon backplane.

Published in:

Journal of the Society for Information Display, 2017, v. 25, n. 3, p. 167, doi. 10.1002/jsid.540

By:

Kimura, Kei;
Onoyama, Yusuke;
Tanaka, Taizo;
Toyomura, Naobumi;
Kitagawa, Hideyuki

Publication type:

Article

A control approach for alternating current disturbance signal of fuel cells based on MOSFET high‐speed switch.

Published in:

Fuel Cells, 2021, v. 21, n. 3, p. 269, doi. 10.1002/fuce.202000176

By:

Zhou, Y. F.;
Dong, Q. C.;
Huang, L. J.;
Li, L. H.;
Lian, J.

Publication type:

Article

Graphene nanoribbon FET technology‐based OTA for optimizing fast and energy‐efficient electronics for IoT application: Next‐generation circuit design.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2024, v. 19, n. 6, p. 1, doi. 10.1049/mna2.70002

By:

Hashmi, Faraz;
Nizamuddin, M;
Farshori, Mohammad Aleem;
Amin, Syed Umar;
Khan, Zafar Iqbal

Publication type:

Article

Snubber Circuit Used as the Temperature Dissipation of Mosfet for Electric Car Drive System.

Published in:

Journal of Science & Technology MSU, 2016, v. 35, n. 3, p. 350

By:

Reweekul, Sakrawee

Publication type:

Article

Design and Implementation of a Paralleled Discrete SiC MOSFET Half-Bridge Circuit with an Improved Symmetric Layout and Unique Laminated Busbar.

Published in:

Energies (19961073), 2023, v. 16, n. 6, p. 2903, doi. 10.3390/en16062903

By:

Ataseven, Ismail;
Sahin, Ilker;
Ozturk, Salih Baris

Publication type:

Article

A Novel Gate Drive Circuit for Suppressing Turn-on Oscillation of Non-Kelvin Packaged SiC MOSFET.

Published in:

Energies (19961073), 2021, v. 14, n. 9, p. 2449, doi. 10.3390/en14092449

By:

Zhao, Hongyan;
Chen, Jiangui;
Li, Yan;
Lin, Fei;
Richelli, Anna

Publication type:

Article

Photovoltaic-Driven SiC MOSFET Circuit Breaker with Latching and Current Limiting Capability.

Published in:

Energies (19961073), 2019, v. 12, n. 23, p. 4585, doi. 10.3390/en12234585

By:

Marroqui, David;
Garrigos, Ausias;
Blanes, Jose M.;
Gutierrez, Roberto

Publication type:

Article

Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT.

Published in:

Energies (19961073), 2019, v. 12, n. 23, p. 4546, doi. 10.3390/en12234546

By:

Yin, Shan;
Wu, Yingzhe;
Liu, Yitao;
Pan, Xuewei

Publication type:

Article

A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs.

Published in:

Energies (19961073), 2017, v. 10, n. 4, p. 452, doi. 10.3390/en10040452

By:

Fayyaz, Asad;
Romano, Gianpaolo;
Urresti, Jesus;
Riccio, Michele;
Castellazzi, Alberto;
Irace, Andrea;
Wright, Nick

Publication type:

Article

A Low-Power Edge Detection Technique for Sensor Wake-Up Applications.

Published in:

Journal of Circuits, Systems & Computers, 2015, v. 24, n. 10, p. -1, doi. 10.1142/S0218126615501571

By:

Wang, Yao;
Wang, Haibo;
Wen, Guangjun

Publication type:

Article

Radiation-Induced Fault Simulation of SOI/SOS CMOS LSI's Using Universal Rad-SPICE MOSFET Model.

Published in:

Journal of Electronic Testing, 2017, v. 33, n. 1, p. 37, doi. 10.1007/s10836-016-5635-8

By:

Petrosyants, Konstantin;
Sambursky, Lev;
Kharitonov, Igor;
Lvov, Boris

Publication type:

Article

A Modified Marx Generator Circuit with Enhanced Tradeoff between Voltage and Pulse Width for Electroporation Applications.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 13, p. N.PAG, doi. 10.3390/electronics11132013

By:

Ganesan, Selvakumar;
Ghosh, Debarshi;
Taneja, Ashu;
Saluja, Nitin;
Rani, Shalli;
Singh, Aman;
Elkamchouchi, Dalia H.;
Noya, Irene Delgado

Publication type:

Article

Suppressing Voltage Spikes of MOSFET in H-Bridge Inverter Circuit.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 4, p. 390, doi. 10.3390/electronics10040390

By:

Aboadla, Ezzidin Hassan;
Khan, Sheroz;
Abdul Kadir, Kushsairy;
Md Yusof, Zulkhairi;
Habaebi, Mohamed Hadi;
Habib, Shabana;
Islam, Muhammad;
Hasan, Mohammad Kamrul;
Hossain, Eklas;
Gordillo, Francisco

Publication type:

Article

Double-gate MOSFET Model Implemented in Verilog-AMS Language for the Transient Simulation and the Configuration of Ultra Low-power Analog Circuits.

Published in:

International Journal of Electronics & Telecommunications, 2021, v. 67, n. 4, p. 609, doi. 10.24425/ijet.2021.137853

By:

Smaani, Billel;
Meraihi, Yacin;
Nafa, Fares;
Benlatreche, Mohamed Salah;
Akroum, Hamza;
Latreche, Saida

Publication type:

Article

Performance Comparison of Stacked Dual- Metal Gate Engineered Cylindrical Surrounding Double-Gate MOSFET.

Published in:

International Journal of Electronics & Telecommunications, 2021, v. 67, n. 1, p. 29, doi. 10.24425/ijet.2021.135940

By:

Dargar, Abha;
Srivastava, Viranjay M.

Publication type:

Article

Ultra-Low Power Consuming Direct Radiation Sensors Based on Floating Gate Structures.

Published in:

Journal of Low Power Electronics & Applications, 2017, v. 7, n. 3, p. 20, doi. 10.3390/jlpea7030020

By:

Pikhay, Evgeny;
Roizin, Yakov;
Nemirovsky, Yael

Publication type:

Article

Voltage balancing control based on gate signal delay in series connection of SiC‐MOSFET.

Published in:

Electronics & Communications in Japan, 2019, v. 102, n. 6, p. 25, doi. 10.1002/ecj.12165

By:

Shingu, Katsuya;
Wada, Keiji

Publication type:

Article

A Novel Pseudo-Taylor-Exponential Approximation Technique for Input–Output Range Extension with Reduced Linearity Error and its Current-Mode CMOS Implementation.

Published in:

Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2021, v. 46, n. 10, p. 9809, doi. 10.1007/s13369-021-05495-w

By:

Srivastava, Pushkar;
Sharma, R. K.

Publication type:

Article

POWER PLAY: Programmable power supplies & loads vendors tackle renewable energy, power efficiency.

Published in:

EE: Evaluation Engineering, 2019, v. 58, n. 3, p. 8

By:

Hockett, Mike

Publication type:

Article

Integratable trench MOSFET with ultra-low specific on-resistance.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 17, p. 1348, doi. 10.1049/el.2015.1493

By:

Chao Yin;
Jie Wei;
Kun Zhou;
Xiaorong Luo

Publication type:

Article

Physical origin of gate voltage-dependent drain-source capacitance in short-channel MOSFETs.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 24, p. 1879, doi. 10.1049/el.2014.2971

By:

Seoyoung Hong;
Seonghearn Lee

Publication type:

Article

MOS-FET as a Current Sensor in Power Electronics Converters.

Published in:

Sensors (14248220), 2015, v. 15, n. 8, p. 18061, doi. 10.3390/s150818061

By:

Pajer, Rok;
Milanovič, Miro;
Premzel, Branko;
Rodič, Miran

Publication type:

Article

Modeling Temperature Response Profile of MOSFET Chip with Heat Sink Parameters in Power Inverters.

Published in:

Acta Mechanica Slovaca, 2022, v. 26, n. 1, p. 26, doi. 10.21496/ams.2022.010

By:

Onoroh, Francis;
Ogbonnaya, Mercy;
Onochie, Uche Paul

Publication type:

Article

Improvement of Philips MOS model 9 radio frequency performance with circuit level parasitic compensation.

Published in:

International Journal of Electrical & Computer Engineering (2088-8708), 2024, v. 14, n. 5, p. 4977, doi. 10.11591/ijece.v14i5.pp4977-4986

By:

Gadige, Aswini Kumar;
Paramesha

Publication type:

Article

Noise Characterization in InAlAs/InGaAs/InP pHEMTs for Low Noise Applications.

Published in:

International Journal of Electrical & Computer Engineering (2088-8708), 2017, v. 7, n. 1, p. 176, doi. 10.11591/ijece.v7i1.pp176-183

By:

Djennati, Z. A.;
Ghaffour, K.

Publication type:

Article

Gate driver, snubber and circuit design considerations for fast‐switching series‐connected SiC MOSFETs.

Published in:

IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 14, p. 1867, doi. 10.1049/pel2.12744

By:

Ubostad, Tobias Nieckula;
Peftitsis, Dimosthenis

Publication type:

Article

Effect of common branch impedance coupling and mutual inductance on current sharing of paralleled SiC MOSFETs with different layouts.

Published in:

IET Power Electronics (Wiley-Blackwell), 2022, v. 15, n. 1, p. 43, doi. 10.1049/pel2.12211

By:

Zhao, Bin;
Ke, Junji;
Yu, Qiuping;
Sun, Peng;
Cai, Yumeng;
Zhao, Zhibin

Publication type:

Article

Design of isolated IGBT driving and control circuits for an interleaved boost converter.

Published in:

Engineering & Applied Science Research, 2021, v. 48, n. 1, p. 48, doi. 10.14456/easr.2021.6

By:

Mohammed, Mustafa Fawzi;
Ahmad, Ali Husain;
Humod, Abdulrahim Thiab

Publication type:

Article

Wpływ obwodów odciążających na łączeniowe straty energii w przekształtnikach wysokiej częstotliwości.

Published in:

Przegląd Elektrotechniczny, 2020, v. 96, n. 6, p. 93, doi. 10.15199/48.2020.06.17

By:

GRZEJSZCZAK, Piotr;
CZAPLICKI, Adam;
SZYMCZAK, Marek;
BARLIK, Roman

Publication type:

Article

Jednoczesny, dwuczęstotliwościowy falownik do nagrzewania indukcyjnego o strukturze półmostka SiC MOSFET.

Published in:

Przegląd Elektrotechniczny, 2018, v. 94, n. 9, p. 95, doi. 10.15199/48.2018.09.23

By:

Kierepka, Kamil

Publication type:

Article

A Temperature-Independent Gate-Oxide Degradation Monitoring Method for Silicon Carbide Metal Oxide–Semiconductor Field-Effect Transistors Based on Turn-Off Ringing.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 4, p. 771, doi. 10.3390/electronics14040771

By:

Zhou, Xinghao;
Sun, Pengju;
Li, Kaiwei;
Liu, Qingsong;
Chen, Lan;
Wang, Bo

Publication type:

Article

Improvement of the Electronic Control Unit for Ignition and Injection in a Wankel Engine.

Published in:

Gümüshane Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2020, v. 10, n. 3, p. 742, doi. 10.17714/gumusfenbil.689267

By:

CIHAN, Ömer;
JAVADZADEHKALKHORAN, Majid;
KUTLAR, Osman Akın

Publication type:

Article

A novel fabrication of TDMOSFETs using two-step trench etching and twice self-alignment technique.

Published in:

International Journal of Electronics Letters, 2019, v. 7, n. 4, p. 473, doi. 10.1080/21681724.2018.1540059

By:

Kim, Jongdae;
Oh, Jimin;
Kim, Sang-Gi;
Yang, Yilsuk

Publication type:

Article

An analytical drain current model for cylindrical gate DMG-GC-DOT MOSFET.

Published in:

International Journal of Electronics Letters, 2019, v. 7, n. 4, p. 458, doi. 10.1080/21681724.2018.1540058

By:

Jaafar, H.;
Aouaj, A.;
Bouziane, A.;
Iñiguez, B.

Publication type:

Article

A Second-Order Fast Discharge Circuit for Transient Electromagnetic Transmitter.

Published in:

Sensors (14248220), 2025, v. 25, n. 7, p. 2224, doi. 10.3390/s25072224

By:

Tan, Chao;
Yuan, Shibin;
Yu, Linshan;
Chen, Yaohui;
He, Changjiang

Publication type:

Article

Design of Precision-Aware Subthreshold-Based MOSFET Voltage Reference.

Published in:

Sensors (14248220), 2022, v. 22, n. 23, p. 9466, doi. 10.3390/s22239466

By:

Mu, Shuzheng;
Chan, Pak Kwong

Publication type:

Article

Optical-Interferometry-Based CMOS-MEMS Sensor Transduced by Stress-Induced Nanomechanical Deflection.

Published in:

Sensors (14248220), 2018, v. 18, n. 1, p. 138, doi. 10.3390/s18010138

By:

Maruyama, Satoshi;
Hizawa, Takeshi;
Takahashi, Kazuhiro;
Sawada, Kazuaki

Publication type:

Article