Works matching DE "COMPOUND semiconductors"
Results: 263
Dual‐Function Near‐Infrared Emitting Aerogel‐Based Device for Detection and Sunlight‐Driven Photodegradation of Antibiotics: Realizing the Processability of Silsesquioxane‐Based Fluorescent Porous Materials.
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- Advanced Functional Materials, 2023, v. 33, n. 38, p. 1, doi. 10.1002/adfm.202214875
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Semiconductor Nanowire Arrays for High‐Performance Miniaturized Chemical Sensing.
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- Advanced Functional Materials, 2022, v. 32, n. 5, p. 1, doi. 10.1002/adfm.202107596
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- Article
Enargite Cu<sub>3</sub>PS<sub>4</sub>: A Cu–S‐Based Thermoelectric Material with a Wurtzite‐Derivative Structure.
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- Advanced Functional Materials, 2020, v. 30, n. 22, p. 1, doi. 10.1002/adfm.202000973
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High level illumination effect on MS'S solar cell characteristics with a new material Ga2Se3, as an intermediate layer.
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- Journal of Materials Science, 1998, v. 33, n. 8, p. 2179, doi. 10.1023/A:1004387607149
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Nanometre-scale electronics with III-V compound semiconductors.
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- Nature, 2011, v. 479, n. 7373, p. 317, doi. 10.1038/nature10677
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Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures.
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- Advanced Electronic Materials, 2024, v. 10, n. 9, p. 1, doi. 10.1002/aelm.202400021
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Photoluminescence of II–IV–V[sub 2] and I–III–VI[sub 2] crystals passivated in a sulfide solution.
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- Technical Physics Letters, 1998, v. 24, n. 11, p. 875, doi. 10.1134/1.1262298
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Growth dynamics of GaAs on a vicinal surface of GaAs(100) in migration-stimulated epitaxy: computer simulation.
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- Technical Physics Letters, 1997, v. 23, n. 2, p. 154, doi. 10.1134/1.1261569
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一种 Ka 频段高密度高集成瓦式 T 组件的设计.
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- Telecommunication Engineering, 2021, v. 61, n. 3, p. 373, doi. 10.3969/j.issn.1001-893x.2021.03.018
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Pushing the boundaries: an interview with Dae-Hyun Kim on terahertz devices.
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- National Science Review, 2024, v. 11, n. 3, p. 1, doi. 10.1093/nsr/nwae013
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Variability of temperature on the electrical properties of heterostructured CIS/Cds through SCAPS simulation for photovoltaic applications.
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- Materials for Renewable & Sustainable Energy, 2023, v. 12, n. 3, p. 235, doi. 10.1007/s40243-023-00244-5
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A comparative study on the self-heating effect of ion-implanted MESFETs.
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- International Journal of Electronics Letters, 2021, v. 9, n. 4, p. 424, doi. 10.1080/21681724.2020.1789757
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CRYSTAL STRUCTURE OF THE QUATERNARY SEMICONDUCTOR COMPOUND CuFeCrSe<sub>3</sub>.
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- Periódico Tchê Química, 2019, v. 16, n. 32, p. 848, doi. 10.52571/ptq.v16.n32.2019.866_periodico32_pgs_848_853.pdf
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Photocatalytic Degradation of Eriochrome Black-T Using BaWO 4 /MoS 2 Composite.
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- Catalysts (2073-4344), 2022, v. 12, n. 10, p. 1290, doi. 10.3390/catal12101290
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Generalised optical printing of photocurable metal chalcogenides.
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- Nature Communications, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41467-022-33040-2
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Porous Semiconductor Compounds with Engineered Morphology as a Platform for Various Applications.
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- Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 11, p. 1, doi. 10.1002/pssr.202300039
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Nanostructural Formation of Pd-Co Bimetallic Complex on HOPG Surfaces: XPS and AFM Studies.
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- Journal of Nanotechnology, 2009, p. 1, doi. 10.1155/2009/971423
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Investigation of Physical Properties of Nanostructured Selenium-Based Compound Semiconductors.
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- International Journal of Nanoscience, 2024, v. 23, n. 5, p. 1, doi. 10.1142/S0219581X2450008X
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ELECTRONEGATIVITY EFFECTS ON THE BANDGAP BOWING CHARACTERS IN COMPOUND-SEMICONDUCTOR TERNARY ALLOYS.
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- International Journal of Nanoscience, 2010, v. 9, n. 6, p. 609, doi. 10.1142/S0219581X10007356
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GROWTH DYNAMICS OF II–VI COMPOUND SEMICONDUCTOR QUANTUM DOTS EMBEDDED IN BOROSILICATE GLASS MATRIX.
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- International Journal of Nanoscience, 2008, v. 7, n. 2/3, p. 151, doi. 10.1142/S0219581X08005250
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Efficiency enhancement of Cu<sub>2</sub>BaSnS<sub>4</sub> experimental thin-film solar cell by device modeling.
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- Journal of Materials Science, 2019, v. 54, n. 24, p. 14787, doi. 10.1007/s10853-019-03942-6
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Optical Measurement of the Stoichiometry of Thin-Film Compounds Synthetized From Multilayers: Example of Cu(In,Ga)Se<sub>2</sub>.
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- Microscopy & Microanalysis, 2023, v. 29, n. 6, p. 1847, doi. 10.1093/micmic/ozad105
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A Review on the Zone Refining Process Technology toward Ultra‐Purification of Gallium for GaAs/GaN‐based Optoelectronic Device Applications.
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- Crystal Research & Technology, 2024, v. 59, n. 7, p. 1, doi. 10.1002/crat.202300347
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Biaxial and Uniaxial Tensile Strains Effects on Electronic, Optical, and Thermoelectric Properties of ScBiTe<sub>3</sub> Compound.
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- Crystal Research & Technology, 2023, v. 58, n. 11, p. 1, doi. 10.1002/crat.202300069
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Influence of Si Doping on Dislocations and Mechanical Properties of GaAs Crystals Grown by Modified Vertical Bridgman Method.
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- Crystal Research & Technology, 2022, v. 57, n. 7, p. 1, doi. 10.1002/crat.202100247
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MOVPE of Group‐III Heterostructures for Optoelectronic Applications.
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- Crystal Research & Technology, 2020, v. 55, n. 2, p. N.PAG, doi. 10.1002/crat.201900027
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Shift of the Infrared Absorption and Emission Spectra of Transition Metal Ions in Solid Solutions of Semiconductor Compounds.
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- Technical Physics Letters, 2021, v. 47, n. 8, p. 613, doi. 10.1134/S1063785021060249
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The Dependence of the Growth Rate and Structure of III–V Nanowires on the Adatom Collection Area on the Substrate Surface.
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- Technical Physics Letters, 2021, v. 47, n. 6, p. 440, doi. 10.1134/S1063785021050060
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Improved Tunneling Property of p+Si Nanomembrane/n+GaAs Heterostructures through Ultraviolet/Ozone Interface Treatment.
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- Inorganics, 2022, v. 10, n. 12, p. 228, doi. 10.3390/inorganics10120228
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Band Edge Engineering of Oxide Photoanodes for Photoelectrochemical Water Splitting: Integration of Subsurface Dipoles with Atomic-Scale Control.
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- Advanced Energy Materials, 2016, v. 6, n. 7, p. 1, doi. 10.1002/aenm.201502154
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Development of a heating system using CPV technology and heat pipes.
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- Environmental Progress & Sustainable Energy, 2015, v. 34, n. 4, p. 1197, doi. 10.1002/ep.12082
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Site-Specific Surface Chemistry of GaAs (001).
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- Surface Review & Letters, 2000, v. 7, n. 5/6, p. 625, doi. 10.1016/S0218-625X(00)00078-6
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Evolution of Structural, Thermal, Optical, and Vibrational Properties of Sc<sub>2</sub>S<sub>3</sub>, ScCuS<sub>2</sub>, and BaScCuS<sub>3</sub> Semiconductors.
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- European Journal of Inorganic Chemistry, 2021, v. 2021, n. 33, p. 3355, doi. 10.1002/ejic.202100292
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A Semiconducting Cationic Square‐Grid Network with Fe<sup>III</sup> Centers Displaying Unusual Dynamic Behavior.
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- European Journal of Inorganic Chemistry, 2020, v. 2020, n. 14, p. 1255, doi. 10.1002/ejic.202000130
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- Article
Potential Antiperovskite Semiconductor Compounds Mg<sub>3</sub>XN (X = P, As, Sb, Bi): the First-Principles Study.
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- Journal of Superconductivity & Novel Magnetism, 2022, v. 35, n. 11, p. 3277, doi. 10.1007/s10948-022-06373-8
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分子束外延设备国内外进展及展望.
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- Journal of Synthetic Crystals, 2024, v. 53, n. 9, p. 1494
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半导体单量子点的分子束外延生长及调控.
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- Journal of Synthetic Crystals, 2023, v. 52, n. 6, p. 982
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六方氮化硼外延生长研究进展.
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- Journal of Synthetic Crystals, 2023, v. 52, n. 5, p. 825
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- Article
Au掺杂Hg3In2 Te6成键机制与电子性质的 第一性原理研究.
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- Journal of Synthetic Crystals, 2023, v. 52, n. 3, p. 428
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- Article
石墨烯上远程外延Ge 纳米柱.
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- Journal of Synthetic Crystals, 2022, v. 51, n. 9/10, p. 1769
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Ⅲ-Ⅵ族InSe 半导体晶体生长研究进展.
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- Journal of Synthetic Crystals, 2022, v. 51, n. 9/10, p. 1722
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- Article
无位错Te-GaSb(100)单晶抛光衬底的晶格完整性.
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- Journal of Synthetic Crystals, 2022, v. 51, n. 6, p. 1003
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New FeVTaO<sub>6</sub> compound—synthesis, structure and selected properties.
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- Journal of Materials Science, 2024, v. 59, n. 2, p. 382, doi. 10.1007/s10853-023-09168-x
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Phase decomposition in the Ni–InGaAs system at high annealing temperature.
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- Journal of Materials Science, 2023, v. 58, n. 40, p. 15738, doi. 10.1007/s10853-023-09037-7
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The August 2023 cover paper.
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- Journal of Materials Science, 2023, v. 58, n. 29, p. 11857, doi. 10.1007/s10853-023-08761-4
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Pressure-dependent mode Grüneisen parameters and their impact on thermal expansion coefficient of zinc-blende InN.
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- Journal of Materials Science, 2023, v. 58, n. 20, p. 8379, doi. 10.1007/s10853-023-08477-5
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Low Temperature Growth of Crystalline Semiconductors on Nonepitaxial Substrates.
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- Advanced Materials Interfaces, 2020, v. 7, n. 14, p. 1, doi. 10.1002/admi.201902191
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Synthesis and Structural Study of the Cu2ZnSn1 – xSixSe4 System.
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- Crystallography Reports, 2019, v. 64, n. 6, p. 879, doi. 10.1134/S106377451906018X
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Synthesis and Structural Study of the Cu2ZnSn1 – xSixSe4 System.
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- Crystallography Reports, 2019, v. 65, n. 6, p. 879, doi. 10.1134/S106377451906018X
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Performance and applications of ZnO/pyrolusite composite particle electrode.
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- Environmental Technology, 2024, v. 45, n. 23, p. 4914, doi. 10.1080/09593330.2023.2283408
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- Article