Title: Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition.
Authors: Karbasian, Golnaz; McConnell, Michael S.; George, Hubert; Schneider, Louisa C.; Filmer, Matthew J.; Orlov, Alexei O.; Nazarov, Alexei N.; Snider, Gregory L.
Abstract: Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing schemes. Given that atomic layer deposition is used to form CMOS gate stacks with low trap densities and excellent thickness control, it is well-suited as a technique to form a variety of tunnel barriers. This work is a review of our recent research on atomic layer deposition and post-fabrication treatments to fabricate metallic single electron transistors with a variety of metals and dielectrics.
Subjects: SINGLE electron transistors; NANOELECTROMECHANICAL systems; METROLOGY
Publication: Applied Sciences (2076-3417), 2017, Vol 7, Issue 3, p246
ISSN: 2076-3417
Publication type: Academic Journal
DOI: 10.3390/app7030246

Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition.

Karbasian, Golnaz; McConnell, Michael S.; George, Hubert; Schneider, Louisa C.; Filmer, Matthew J.; Orlov, Alexei O.; Nazarov, Alexei N.; Snider, Gregory L.