Works matching DE "PHASE change memory"
Results: 283
Rapid learning with phase-change memory-based in-memory computing through learning-to-learn.
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- Nature Communications, 2025, v. 16, n. 1, p. 1, doi. 10.1038/s41467-025-56345-4
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PCR*-Tree: PCM-Aware R*-Tree.
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- Journal of Information Science & Engineering, 2017, v. 33, n. 5, p. 1359, doi. 10.6688/JISE.2017.33.5.15
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Ultracompact photonic integrated content addressable memory using phase change materials.
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- Optical & Quantum Electronics, 2022, v. 54, n. 3, p. 1, doi. 10.1007/s11082-022-03569-z
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The Study of Crystallization Kinetics and Chemical Changes in Ge<sub>4</sub>Sb<sub>4</sub>Te<sub>5</sub> through Transmission Electron Microscope.
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- Microscopy & Microanalysis, 2024, v. 30, p. 1, doi. 10.1093/mam/ozae044.838
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Phase-Change Materials; the Challenges for TEM.
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- Microscopy & Microanalysis, 2019, p. 1904, doi. 10.1017/S1431927618010000
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Sputter‐grown GeTe/Sb<sub>2</sub>Te<sub>3</sub> superlattice interfacial phase change memory for low power and multi‐level‐cell operation.
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- Electronics Letters (Wiley-Blackwell), 2022, v. 58, n. 1, p. 38, doi. 10.1049/ell2.12337
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narrowing window.
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- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 6, p. 332, doi. 10.1049/el.2018.0672
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Investigation of bias polarity dependence of set operation in GeCu<sub>2</sub>Te<sub>3</sub> phase change memory.
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- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 6, p. 350, doi. 10.1049/el.2017.3902
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Exploiting Storage Class Memory for Future Computer Systems: A Review.
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- IETE Technical Review, 2015, v. 32, n. 3, p. 218, doi. 10.1080/02564602.2015.1004201
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Density measurement of solid and molten Sb2Te3 chalcogenide alloy by sessile drop method.
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- High Temperatures - High Pressures, 2017, v. 46, n. 3, p. 219
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Crystallization kinetics of nanoconfined GeTe slabs in GeTe/TiTe2-like superlattices for phase change memories.
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- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-53192-z
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Data Classification Management with its Interfacing Structure for Hybrid SLC/MLC PRAM Main Memory.
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- Computer Journal, 2015, v. 58, n. 11, p. 2852, doi. 10.1093/comjnl/bxu133
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Encoding multistate charge order and chirality in endotaxial heterostructures.
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- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-41780-y
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In-memory photonic dot-product engine with electrically programmable weight banks.
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- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-38473-x
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High Reliability and Fast-Speed Phase-Change Memory Based on Sb<sub>70</sub>Se<sub>30</sub>/SiO<sub>2</sub> Multilayer Thin Films.
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- Advances in Materials Science & Engineering, 2018, p. 1, doi. 10.1155/2018/9693015
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Efficient Inter-View Prediction Structure for Multi-View High Efficiency Video Coding.
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- International Journal of Performability Engineering, 2019, v. 15, n. 4, p. 1094, doi. 10.23940/ijpe.19.04.p4.10941102
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Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses.
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- Frontiers in Neuroscience, 2016, p. 1, doi. 10.3389/fnins.2016.00056
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Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array.
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- Frontiers in Neuroscience, 2014, v. 8, p. 1, doi. 10.3389/fnins.2014.00205
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Performance improvement of phase-change memory cell using AlSb<sub>3</sub>Te and atomic layer deposition TiO<sub>2</sub> buffer layer.
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- Nanoscale Research Letters, 2013, v. 8, n. 2, p. 1, doi. 10.1186/1556-276X-8-77
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CRYSTALLIZATION MECHANISM AND KINETIC PARAMETERS IN Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> THIN FILMS FOR THE PHASE CHANGE MEMORY APPLICATION.
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- Chalcogenide Letters, 2018, v. 15, n. 1, p. 45
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Atomistic Simulations of Phase Change Materials for Electronic Memories.
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- International Journal of Nanoscience, 2019, v. 18, n. 3/4, p. N.PAG, doi. 10.1142/S0219581X19400829
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Improvement of the thermal efficiency of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>-based device by ultrathin carbon nanolayers.
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- Journal of Materials Science: Materials in Electronics, 2024, v. 35, n. 2, p. 1, doi. 10.1007/s10854-023-11901-w
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Robust thermal stability in DRAM-like Sb<sub>2</sub>Te-based phase change memory by Hafnium modified.
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- Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 13, p. 10423, doi. 10.1007/s10854-022-08029-8
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Investigation of Ru-doped Sb<sub>2</sub>Te alloy for high-speed and good thermal stability phase change memory applications.
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- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 15, p. 20679, doi. 10.1007/s10854-021-06581-3
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Effect of Mg35Sb65 interlayer on the thermal stability and scaling of Ge2Sb2Te5 phase change thin film.
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- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 5, p. 6408, doi. 10.1007/s10854-021-05358-y
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Phase transition and electrical conversion properties of Ge/Sb nano-multilayer films on flexible substrates.
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- NPJ Flexible Electronics, 2024, v. 8, n. 1, p. 1, doi. 10.1038/s41528-024-00296-1
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High-throughput screening to identify two-dimensional layered phase-change chalcogenides for embedded memory applications.
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- NPJ Computational Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1038/s41524-024-01387-3
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A Survey of Soft-Error Mitigation Techniques for Non-Volatile Memories.
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- Computers (2073-431X), 2017, v. 6, n. 1, p. 8, doi. 10.3390/computers6010008
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Low‐Power Crystallization Process in In<sub>3</sub>SbTe<sub>2</sub> Phase Change Memory Devices with Thin Oxide Layer.
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- Physica Status Solidi (B), 2024, v. 261, n. 5, p. 1, doi. 10.1002/pssb.202400081
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A Possible Origin of Glasslike Thermal Conductivity in Phase‐Change Memory Crystals.
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- Physica Status Solidi (B), 2024, v. 261, n. 3, p. 1, doi. 10.1002/pssb.202300514
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Phase Change Memory Drift Compensation in Spiking Neural Networks Using a Non-Linear Current Scaling Strategy.
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- Journal of Low Power Electronics & Applications, 2024, v. 14, n. 4, p. 50, doi. 10.3390/jlpea14040050
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Decoding Algorithms and HW Strategies to Mitigate Uncertainties in a PCM-Based Analog Encoder for Compressed Sensing.
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- Journal of Low Power Electronics & Applications, 2023, v. 13, n. 1, p. 17, doi. 10.3390/jlpea13010017
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Comprehensive Study of Side-Channel Attack on Emerging Non-Volatile Memories †.
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- Journal of Low Power Electronics & Applications, 2021, v. 11, n. 4, p. 38, doi. 10.3390/jlpea11040038
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Study on Texture Formation of Sb 2 Te Thin Films for Phase Change Memory Applications.
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- Crystals (2073-4352), 2023, v. 13, n. 3, p. 377, doi. 10.3390/cryst13030377
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Room temperature ferromagnetism in Co and Ni co-doped ZnO particles: validation through density functional theory.
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- Applied Physics A: Materials Science & Processing, 2024, v. 130, n. 11, p. 1, doi. 10.1007/s00339-024-08018-0
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Thermal stability and crystallization kinetics of Er-doped Ge–Sb–Se chalcogenide: a DSC study.
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- Applied Physics A: Materials Science & Processing, 2024, v. 130, n. 3, p. 1, doi. 10.1007/s00339-024-07310-3
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Nanoarchitectonics of binary semiconductor Sb–Y for the application of phase-change memory device.
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- Applied Physics A: Materials Science & Processing, 2023, v. 129, n. 11, p. 1, doi. 10.1007/s00339-023-07035-9
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Phase transition behavior and electronic properties of GaSb/Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> superlattice-like structure thin films.
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- Applied Physics A: Materials Science & Processing, 2022, v. 128, n. 5, p. 1, doi. 10.1007/s00339-022-05494-0
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Investigation of V2O5/Ge8Sb92 multilayer thin film for high-data-retention and high-speed phase change memory applications.
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- Applied Physics A: Materials Science & Processing, 2020, v. 126, n. 7, p. 1, doi. 10.1007/s00339-020-03706-z
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The ovonic threshold switching characteristics in Si<sub>x</sub>Te<sub>1−x</sub> based selector devices.
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- Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 11, p. 1, doi. 10.1007/s00339-018-2153-9
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Unidirectional threshold switching in Ag/Si-based electrochemical metallization cells for high-density bipolar RRAM applications.
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- Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 3, p. 1, doi. 10.1007/s00339-018-1680-8
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Simultaneous ultra-long data retention and low power based on Ge<sub>10</sub>Sb<sub>90</sub>/SiO<sub>2</sub> multilayer thin films.
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- Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 2, p. 0, doi. 10.1007/s00339-017-1519-8
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Improved phase change behavior of SbTe material by ZnSb doping for phase change memory.
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- Applied Physics A: Materials Science & Processing, 2015, v. 119, n. 2, p. 425, doi. 10.1007/s00339-014-8938-6
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Influence of yttrium element on the crystallization performance of ZnSb alloy for phase change memory application.
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- European Physical Journal - Applied Physics, 2023, v. 98, p. 1, doi. 10.1051/epjap/2023230054
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Chromium doped GeTe for low-power-consumption phase change memory.
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- European Physical Journal - Applied Physics, 2020, v. 92, n. 3, p. 1, doi. 10.1051/epjap/2020200275
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Metric and fault-tolerant metric dimension for GeSbTe superlattice chemical structure.
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- PLoS ONE, 2023, v. 18, n. 11, p. 1, doi. 10.1371/journal.pone.0290411
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Resource Allocation Using Phase Change Hyper Switching Algorithm in the Cloud Environment.
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- Intelligent Automation & Soft Computing, 2022, v. 34, n. 3, p. 1839, doi. 10.32604/iasc.2022.026354
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Use of Eutectic Effects in the Possible Creation of Phase-Change Memory Cells Based on Ag–Cu Nanoclusters.
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- Physics of Metals & Metallography, 2023, v. 124, n. 10, p. 1041, doi. 10.1134/S0031918X23601634
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Nature of gap states in GeSbTe phase change memory materials<sup>1</sup>.
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- Canadian Journal of Physics, 2014, v. 92, n. 7/8, p. 671, doi. 10.1139/cjp-2013-0531
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Thermodynamic Modeling of the Cu-Sb-Se System.
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- Journal of Phase Equilibria & Diffusion, 2023, v. 44, n. 6, p. 687, doi. 10.1007/s11669-023-01074-8
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