Works matching DE "P-N junctions (Semiconductors)"

Results: 163

A nanoscale CoO-WO p-n junction sensor with enhanced acetone responsivity.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 10, p. 8217, doi. 10.1007/s10854-015-3484-3

By:

Zhao, Xiaodong;
Ji, Huiming;
Jia, Qianqian;
Wang, Mingjing

Publication type:

Article

Fabrication of polypyrrole/ZnO nanowires based organic-inorganic hybrid p- n junctions.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 4, p. 2384, doi. 10.1007/s10854-015-2695-y

By:

Mohan Kumar, G.;
Madhan Kumar, A.;
Ilanchezhiyan, P.;
Kang, T.

Publication type:

Article

Measurement of the Thermal Impedance of Light-Emitting Diodes and Light-Emitting Diode Matrices.

Published in:

Measurement Techniques, 2017, v. 60, n. 1, p. 46, doi. 10.1007/s11018-017-1157-8

By:

Smirnov, V.;
Sergeev, V.;
Gavrikov, A.

Publication type:

Article

FePS3-MoS2p-n junctions for broadband optoelectronics.

Published in:

NPJ 2D Materials & Applications, 2025, v. 9, n. 1, p. 1, doi. 10.1038/s41699-025-00541-9

By:

Low, Mei Xian;
Ahmed, Taimur;
Saini, Saurabh K.;
Panahandeh-Fard, Majid;
Mendes, Joao O.;
Chesman, Anthony S. R.;
Xu, Chenglong;
Van Embden, Joel;
Wang, Lan;
Kumar, Mahesh;
Sriram, Sharath;
Bhaskaran, Madhu;
Walia, Sumeet

Publication type:

Article

Ultrafast Ionizing Radiation Detection by p–n Junctions Made with Single Crystals of Solution‐Processed Perovskite.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 11, p. N.PAG, doi. 10.1002/aelm.201800237

By:

Wang, Xin;
Wu, Yao;
Li, Guanwen;
Wu, Jun;
Zhang, XiaoBing;
Li, Qing;
Wang, Baoping;
Chen, Jing;
Lei, Wei

Publication type:

Article

Nanofunctional gallium oxide (Ga2O3) nanowires/nanostructures and their applications in nanodevices.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 781, doi. 10.1002/pssr.201307253

By:

Kumar, Sudheer;
Singh, R.

Publication type:

Article

Properties and tailoring of the ubiquitous core-shell p-n junction in semiconductor nanowires by δ-doping.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 894, doi. 10.1002/pssr.201307139

By:

Zervos, Matthew

Publication type:

Article

Dielectric Studies on Fe3O4 Nanodoped p-n-Alkyloxybenzoic Acids.

Published in:

Advances in Condensed Matter Physics, 2014, p. 1, doi. 10.1155/2014/639259

By:

Sastry, S. Sreehari;
Kumar, L. Tanuj;
Vishwam, T.;
Murthy, V. R. K.;
Lakshminaryana, S.;
Tiong, Ha Sie

Publication type:

Article

Effect of uniaxial strain on the electronic transport through disordered graphene p-n junctions.

Published in:

Modern Physics Letters B, 2016, v. 30, n. 26, p. -1, doi. 10.1142/S0217984916503371

By:

Deng, Min;
Wang, Yong-Jian;
Gang, Yu;
Chen, Jian-Fei

Publication type:

Article

Blue LEDs: Helping to Save Earth.

Published in:

AAPPS Bulletin, 2014, v. 24, n. 6, p. 11

By:

KAZUHIRO OHKAWA

Publication type:

Article

A Study of PN Junction Diffusion Capacitance of MOSFET in Presence of Single Event Transient.

Published in:

Journal of Electronic Testing, 2017, v. 33, n. 6, p. 769, doi. 10.1007/s10836-017-5694-5

By:

Yi, Tengyue;
Liu, Yi;
Yang, Yintang

Publication type:

Article

Study of the spectral and photoelectric parameters of prototypes of hybrid solar elements with nanoclusters.

Published in:

Metallurgist, 2012, v. 56, n. 3/4, p. 303, doi. 10.1007/s11015-012-9575-y

By:

Murashev, V.;
Korolchenko, A.;
Legotin, S.

Publication type:

Article

Annular flexible thermoelectric devices with integrated-module architecture.

Published in:

NPJ Flexible Electronics, 2020, v. 4, n. 1, p. 1, doi. 10.1038/s41528-020-0064-2

By:

Qu, Dawei;
Huang, Xuan;
Li, Xin;
Wang, Hanfu;
Chen, Guangming

Publication type:

Article

Application of a Capacitive Charge-Sharing Circuit for Reducing the Number of Readout Channels of Multichannel Semiconductor Detectors with p–n Junctions.

Published in:

Instruments & Experimental Techniques, 2023, v. 66, n. 1, p. 36, doi. 10.1134/S0020441223010141

By:

Gorbunov, A. V.;
Karmanov, D. E.

Publication type:

Article

Droop reduction in ZnO/GaN Hybrid Light Emitting Diodes.

Published in:

Indian Journal of Pure & Applied Physics, 2021, v. 59, n. 4, p. 335

By:

Chaudhri, Aadarsh Kumar;
Joshi, B. C.;
Devi, Vanita;
Singh, Mahipal

Publication type:

Article

Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron.

Published in:

Advances in Materials Science & Engineering, 2018, p. 1, doi. 10.1155/2018/8797031

By:

Atabaev, I. G.;
Juraev, Kh. N.

Publication type:

Article

Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2128, doi. 10.1134/S1063782618160327

By:

Sobolev, M. S.;
Lazarenko, A. A.;
Mizerov, A. M.;
Nikitina, E. V.;
Pirogov, E. V.;
Timoshnev, S. N.;
Bouravleuv, A. D.

Publication type:

Article

On the Fabrication of Graphene p-n Junctions and Their Application for Detecting Terahertz Radiation.

Published in:

Semiconductors, 2018, v. 52, n. 8, p. 1077, doi. 10.1134/S1063782618080225

By:

Vasileva, G. Yu.;
Vasilyev, Yu. B.;
Novikov, S. N.;
Danilov, S. N.;
Ganichev, S. D.

Publication type:

Article

High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p-n junctions: I. Physics of the switching process.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1208, doi. 10.1134/S1063782617090123

By:

Kyuregyan, A.

Publication type:

Article

High-power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p-n junctions: II. Energy efficiency.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1214, doi. 10.1134/S1063782617090135

By:

Kyuregyan, A.

Publication type:

Article

Local thermoelectric effects in wide-gap semiconductors.

Published in:

Semiconductors, 2017, v. 51, n. 7, p. 883, doi. 10.1134/S1063782617070296

By:

Ordin, S.;
Zhilyaev, Yu.;
Zelenin, V.;
Panteleev, V.

Publication type:

Article

Electroreflectance spectra from multiple InGaN/GaN quantum wells in the nonuniform electric field of a p-n junction.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 189, doi. 10.1134/S1063782617020038

By:

Avakyants, L.;
Aslanyan, A.;
Bokov, P.;
Polozhentsev, K.;
Chervyakov, A.

Publication type:

Article

Mechanism of microplasma turn-off upon the avalanche breakdown of silicon p-n structures.

Published in:

Semiconductors, 2016, v. 50, n. 10, p. 1352, doi. 10.1134/S1063782616100171

By:

Musaev, A.

Publication type:

Article

On methods of determining the band gap of semiconductor structures with p-n junctions.

Published in:

Semiconductors, 2016, v. 50, n. 9, p. 1216, doi. 10.1134/S1063782616090256

By:

Vikulin, I.;
Korobitsyn, B.;
Kriskiv, S.

Publication type:

Article

Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact.

Published in:

Semiconductors, 2016, v. 50, n. 8, p. 1097, doi. 10.1134/S106378261608008X

By:

Babichev, A.;
Zhang, H.;
Guan, N.;
Egorov, A.;
Julien, F.;
Messanvi, A.;
Durand, C.;
Eymery, J.;
Tchernycheva, M.

Publication type:

Article

Radiation-induced bistable centers with deep levels in silicon n- p structures.

Published in:

Semiconductors, 2016, v. 50, n. 6, p. 751, doi. 10.1134/S1063782616060130

By:

Lastovskii, S.;
Markevich, V.;
Yakushevich, H.;
Murin, L.;
Krylov, V.

Publication type:

Article

On the ohmicity of Schottky contacts.

Published in:

Semiconductors, 2016, v. 50, n. 6, p. 761, doi. 10.1134/S106378261606021X

By:

Sachenko, A.;
Belyaev, A.;
Konakova, R.

Publication type:

Article

Impact ionization in nonuniformly heated silicon p- n- n and n- p- p structures.

Published in:

Semiconductors, 2016, v. 50, n. 4, p. 462, doi. 10.1134/S1063782616040175

By:

Musaev, A.

Publication type:

Article

Optimization of InGaP/GaAs/InGaAs heterolasers with tunnel-coupled waveguides.

Published in:

Semiconductors, 2015, v. 49, n. 12, p. 1571, doi. 10.1134/S1063782615120180

By:

Samartsev, I.;
Aleshkin, V.;
Dikareva, N.;
Dubinov, A.;
Zvonkov, B.;
Kolpakov, D.;
Nekorkin, S.

Publication type:

Article

Defect-related luminescence in silicon p- n junctions.

Published in:

Semiconductors, 2015, v. 49, n. 9, p. 1222, doi. 10.1134/S1063782615090171

By:

Kuzmin, R.;
Bagraev, N.;
Klyachkin, L.;
Malyarenko, A.

Publication type:

Article

On the tensosensitivity of a p- n junction under illumination.

Published in:

Semiconductors, 2015, v. 49, n. 6, p. 819, doi. 10.1134/S1063782615060111

By:

Gulyamov, G.;
Gulyamov, A.

Publication type:

Article

P-InAsSbP/ n-InAs/ n-InAs photodiodes for operation at moderate cooling (150-220 K).

Published in:

Semiconductors, 2014, v. 48, n. 10, p. 1359, doi. 10.1134/S1063782614100066

By:

Brunkov, P.;
Il'inskaya, N.;
Karandashev, S.;
Latnikova, N.;
Lavrov, A.;
Matveev, B.;
Petrov, A.;
Remennyi, M.;
Sevostyanov, E.;
Stus, N.

Publication type:

Article

Effect of neutron irradiation on the structure of silicon p- n junctions of voltage limiters.

Published in:

Semiconductors, 2014, v. 48, n. 7, p. 935, doi. 10.1134/S1063782614070185

By:

Rakhmatov, A.

Publication type:

Article

Optical and electrical properties of 4 H-SiC irradiated with Xe ions.

Published in:

Semiconductors, 2014, v. 48, n. 2, p. 156, doi. 10.1134/S1063782614020146

By:

Kalinina, E.;
Chuchvaga, N.;
Bogdanova, E.;
Strel'chuk, A.;
Shustov, D.;
Zamoryanskaya, M.;
Skuratov, V.

Publication type:

Article

Fabrication and study of p-n structures with crystalline inclusions in the space-charge region.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1652, doi. 10.1134/S1063782613120105

By:

Kalinovsky, V. S.;
Levin, R. V.;
Pushniy, B. V.;
Mizerov, M. N.;
Rumyantsev, V. D.;
Andreev, V. M.

Publication type:

Article

Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix.

Published in:

Semiconductors, 2013, v. 47, n. 11, p. 1523, doi. 10.1134/S1063782613110171

By:

Parkhomenko, Ya.;
Ivanov, E.;
Moiseev, K.

Publication type:

Article

Voltage dependence of the differential capacitance of a p- n junction.

Published in:

Semiconductors, 2013, v. 47, n. 4, p. 543, doi. 10.1134/S1063782613040209

By:

Shekhovtsov, N.

Publication type:

Article

Picosecond internal Q-switching mode correlates with laser diode breakdown voltage.

Published in:

Semiconductors, 2013, v. 47, n. 3, p. 406, doi. 10.1134/S1063782613030159

By:

Lanz, B.;
Vainshtein, S.;
Lantratov, V.;
Kalyuzhnyy, N.;
Mintairov, S.;
Kostamovaara, J.

Publication type:

Article

On the impedance spectroscopy of structures with a potential barrier.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 1012, doi. 10.1134/S1063782612080040

By:

Brus, V.

Publication type:

Article

Electrical Characteristics of GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrates.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 3, p. 999, doi. 10.1007/s11664-014-3605-4

By:

Li, Y.;
Feng, L.;
Xing, Q.;
Wang, X.

Publication type:

Article

A Thermoelectric Generator Concept Using a p- n Junction: Experimental Proof of Principle.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 7, p. 2297, doi. 10.1007/s11664-012-2399-5

By:

Becker, André;
Chavez, Ruben;
Petermann, Nils;
Schierning, Gabi;
Schmechel, Roland

Publication type:

Article

Features of the Frequency Dependence of Capacitance-Voltage Characteristics of a Semiconductor Structure of a Photoelectric Converter Based on a p-n Junction with an Antireflective Film of Porous Silicon.

Published in:

Technical Physics, 2018, v. 63, n. 12, p. 1824, doi. 10.1134/S1063784218120204

By:

Tregulov, V. V.

Publication type:

Article

Specific features of current flow mechanisms in the semiconductor structure of a photoelectric converter with an n - p-junction and an antireflective porous silicon film.

Published in:

Technical Physics, 2016, v. 61, n. 11, p. 1694, doi. 10.1134/S106378421611027X

By:

Tregulov, V.;
Stepanov, V.;
Litvinov, V.;
Ermachikhin, A.

Publication type:

Article

Analysis (Simulation) of Ni-63 beta-voltaic cells based on silicon solar cells.

Published in:

Technical Physics, 2016, v. 61, n. 7, p. 1053, doi. 10.1134/S1063784216070148

By:

Gorbatsevich, A.;
Danilin, A.;
Korneev, V.;
Magomedbekov, E.;
Molin, A.

Publication type:

Article

Peculiarities of the capacitance-voltage characteristic of a photoelectric solar energy convertor based on a silicon p- n junction with a porous silicon antireflection coating.

Published in:

Technical Physics, 2014, v. 59, n. 9, p. 1413, doi. 10.1134/S1063784214090254

By:

Tregulov, V.

Publication type:

Article

Optical characteristics of porous silicon structures.

Published in:

Technical Physics, 2014, v. 59, n. 2, p. 224, doi. 10.1134/S1063784214020145

By:

Len'shin, A.;
Kashkarov, V.;
Seredin, P.;
Agapov, B.;
Minakov, D.;
Tsipenyuk, V.;
Domashevskaya, E.

Publication type:

Article

Video solitons in a dispersive transmission line with the nonlinear capacitance of a p-n junction.

Published in:

Technical Physics, 2013, v. 58, n. 3, p. 340, doi. 10.1134/S1063784213030122

By:

Kim, D.

Publication type:

Article

Fabrication and Local Electrical Characterization of p–n Junction Copper Phthalocyanine Nanorods.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 24, p. 1, doi. 10.1002/pssa.202300243

By:

Koshiba, Yasuko;
Sugimoto, Iori;
Horike, Shohei;
Fukushima, Tatsuya;
Ishida, Kenji

Publication type:

Article

Performance evaluation of normally ON/OFF junctionless vertical channel GaN FET.

Published in:

Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 9, p. 1, doi. 10.1007/s00339-018-2018-2

By:

Tripathi, Ball Mukund Mani;
Das, Shyama Prasad

Publication type:

Article

Activation of dopant in silicon by ion implantation under heating sample at 200 °C.

Published in:

Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 3, p. 1, doi. 10.1007/s00339-018-1656-8

By:

Sameshima, Toshiyuki;
Yasuta, Keisuke;
Hasumi, Masahiko;
Nagao, Tomokazu;
Inouchi, Yutaka

Publication type:

Article