Works matching DE "JUNCTION transistors"
Results: 188
Research Progress on p-Type Conduction of p Phase Gallium Oxide.
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- Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 177, doi. 10.16553/j.cnki.issn1000-985x.2024.0285
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Research Progress on Insulated Gate Bipolar Transistor (IGBT) Modules.
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- Micromachines, 2025, v. 16, n. 2, p. 197, doi. 10.3390/mi16020197
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Susceptor-based rapid thermal processing for forming ultra-shallow junctions.
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- Solid State Technology, 2000, v. 43, n. 4, p. 50
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A Review of 1/f Noise in Terms of Mobility Fluctuations and White Noise in Modern Submicron Bipolar Transistors — BJTs and HBTs.
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- Fluctuation & Noise Letters, 2001, v. 1, n. 4, p. R175, doi. 10.1142/S0219477501000457
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Semiconductor Junction Noise Revisited: Where Have all the Physical Noise Sources Gone?
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- Fluctuation & Noise Letters, 2001, v. 1, n. 3, p. C15, doi. 10.1142/S0219477501000421
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- Article
Statistical Simulations of the Low-Frequency Noise in Polysilicon Emitter Bipolar Transistors Using a Model Based on Generation-Recombination Centers.
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- Fluctuation & Noise Letters, 2001, v. 1, n. 2, p. L51, doi. 10.1142/S0219477501000202
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Displacement damage and total ionisation dose effects on 4H-SiC power devices.
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- IET Power Electronics (Wiley-Blackwell), 2019, v. 12, n. 15, p. 1, doi. 10.1049/iet-pel.2019.0049
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Junction temperature estimation of IGBT module via a bond wires lift-off independent parameter V<sub>gE-np</sub>.
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- IET Power Electronics (Wiley-Blackwell), 2018, v. 11, n. 2, p. 320, doi. 10.1049/iet-pel.2017.0168
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Base drive energy recovery for a silicon bipolar junction transistors.
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- IET Power Electronics (Wiley-Blackwell), 2015, v. 8, n. 12, p. 2429, doi. 10.1049/iet-pel.2014.0818
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- Article
Reduced junction temperature control during low-voltage ride-through for single-phase photovoltaic inverters.
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- IET Power Electronics (Wiley-Blackwell), 2014, v. 7, n. 8, p. 2050, doi. 10.1049/iet-pel.2013.0734
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- Article
Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate.
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- NPJ 2D Materials & Applications, 2022, v. 6, n. 1, p. 1, doi. 10.1038/s41699-022-00302-y
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- Article
Template‐Guided C8‐BTBT/MAPbBr<sub>3</sub>/C8‐BTBT Heterostructures for Broadband Bipolar Phototransistors.
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- Advanced Materials Interfaces, 2022, v. 9, n. 12, p. 1, doi. 10.1002/admi.202102344
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- Article
Effect of Trench Isolation on the Self-heating Phenomenon in Advanced Radio Frequency SiGe Heterojunction Bipolar Transistor.
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- Journal of Nano- & Electronic Physics, 2021, v. 13, n. 1, p. 01021-1, doi. 10.21272/jnep.13(1).01021
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Investigation of optically generated kink effect in GaAs-based heterojunction phototransistors.
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- European Physical Journal B: Condensed Matter, 2011, v. 83, n. 2, p. 143, doi. 10.1140/epjb/e2011-20238-3
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Development of the Bipolar Junction Transistor Diagnostic Test (BJTDT) to explore the second-year undergraduate Myanmar electronic and Thai electrical engineering students' understanding of BJT working principles and applications.
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- Australasian Journal of Engineering Education, 2024, v. 29, n. 1, p. 66, doi. 10.1080/22054952.2024.2347792
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Editorial.
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- 2024
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- Editorial
Realization of a Dedicated Bench for Reliability and Robustness Studies of High Si-LDMOS Power Transistors.
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- International Journal of Microwave & Optical Technology, 2014, v. 9, n. 6, p. 429
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PERIODIC CONSTANTS AND TIME-ANGLE DIFFERENCE OF ISOCHRONOUS CENTERS FOR COMPLEX ANALYTIC SYSTEMS.
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- International Journal of Bifurcation & Chaos in Applied Sciences & Engineering, 2006, v. 16, n. 12, p. 3747, doi. 10.1142/S0218127406017142
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A Novel Schottky Collector Lateral Bipolar Junction Transistor on Silicon on Insulator.
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- Journal of Active & Passive Electronic Devices, 2014, v. 9, n. 4, p. 281
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BATTLE FIELD DAMAGE REPAIR OF A HELICOPTER COMPOSITE FRAME-TO-SKIN JUNCTION.
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- Journal of Battlefield Technology, 2009, v. 12, n. 2, p. 13
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Adaptive Gate Bias Module Ensures Amplifier Performance.
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- Microwave Journal, 2016, v. 59, n. 4, p. 182
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LDMOS RUGGEDNESS RELIABILITY.
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- Microwave Journal, 2009, v. 52, n. 4, p. 96
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DESIGN OF A 3.5 W S-BAND POWER AMPLIFIER BASED ON SMALL-SIGNAL S-PARAMETER ANALYSIS.
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- Microwave Journal, 2004, v. 47, n. 7, p. 80
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Organic-inorganic hybrid piezotronic bipolar junction transistor for pressure sensing.
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- Microsystems & Nanoengineering, 2024, v. 10, n. 1, p. 1, doi. 10.1038/s41378-024-00699-0
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Dynamic range and sensitivity improvement in near-infrared detectors using silicon germanium bipolar complementary metal-oxide semiconductor technology.
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- Optical Engineering, 2013, v. 52, n. 4, p. 1, doi. 10.1117/1.OE.52.4.044001
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High Power Analysis of Surrounded Channel Junction Less Field Effect Transistor.
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- Journal of Nano- & Electronic Physics, 2024, v. 16, n. 5, p. 1, doi. 10.21272/jnep.16(5).05004
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A study of the silicon Bulk-Barrier Diodes designed in planar technology by means of simulation.
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- Journal of Engineering Science & Technology Review, 2009, v. 2, n. 1, p. 157
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Contributions to the Demythisation of the Bipolar Junction Transistor.
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- Romanian Journal of Information Technology & Automatic Control / Revista Română de Informatică și Automatică, 2019, v. 29, n. 2, p. 113, doi. 10.33436/v29i2y201909
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- Article
Experimental Observation of Oscillating Wave Propagation on Switch Lines for Generation of Continuous Electromagnetic Waves.
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- Research Letters in Signal Processing, 2009, v. 2009, p. 1, doi. 10.1155/2009/816806
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- Article
An EMC Susceptibility Study of Integrated Basic Bandgap Voltage Reference Cores.
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- Radioengineering, 2022, v. 31, n. 3, p. 413, doi. 10.13164/re.2022.0413
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- Article
Novel Resistorless First-Order Current-Mode Universal Filter Employing a Grounded Capacitor.
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- Radioengineering, 2011, v. 20, n. 3, p. 656
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Investigating semiconductor device characterization in educational labs.
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- International Journal of Electrical Engineering Education, 2021, v. 58, n. 2, p. 319, doi. 10.1177/0020720918825244
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Motivating two-port network analysis through elementary and advanced examples.
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- International Journal of Electrical Engineering Education, 2010, v. 47, n. 4, p. 404
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A New Design for a BiCMOS Controlled Current Conveyor.
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- Electronics & Electrical Engineering, 2013, v. 19, n. 1, p. 56, doi. 10.5755/j01.eee.19.1.3257
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William Shockley: The Father of a Complicated Legacy.
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- Microwave Journal, 2024, v. 67, n. 2, p. 18
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Picking the Right Semiconductor Technology for Pulsed RF Power Amplifiers.
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- Microwave Journal, 2018, p. 6
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Double-polysilicon self-aligned lateral bipolar transistors.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 183, doi. 10.1007/s10854-007-9300-y
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ANALYSIS OF POWER LOSSES IN MULTILEVEL PULSE-WIDTH MODULATION INVERTERS.
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- Eastern-European Journal of Enterprise Technologies, 2022, v. 116, n. 5, p. 31, doi. 10.15587/1729-4061.2022.252771
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Field-effect BJT: an adaptive and multifunctional nanoscale transistor.
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- Applied Nanoscience, 2022, v. 12, n. 5, p. 1435, doi. 10.1007/s13204-021-02299-0
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Performance Analysis of JL-FinFET with Varied Non-Uniform Doping Concentrations, Fin Height and Fin Width using Device Simulator.
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- International Journal of Nanoelectronics & Materials, 2023, v. 16, n. 1, p. 187
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Analytical Approach Assisted Simulation Study of Si, SiGe, and InP based Bipolar Junction Transistors.
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- International Journal of Nanoelectronics & Materials, 2019, v. 12, n. 2, p. 237
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Miniature Switchable Millimeter-Wave BiCMOS Low-Noise Amplifier at 120/140 GHz Using an HBT Switch.
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- Micromachines, 2019, v. 10, n. 10, p. 632, doi. 10.3390/mi10100632
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Animation Based Learning of Electronic Devices.
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- Advances in Engineering Education, 2014, v. 4, n. 1, p. 1
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- Article
Chaotic dynamics in memristive circuits.
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- Caderno Brasileiro de Ensino de Física, 2023, v. 45, p. 1, doi. 10.1590/1806-9126-RBEF-2023-0116
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- Article
A Low-Cost Pre-Amplifier for Low-Current Measurement with Temperature Compensation.
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- Journal of Integrated Circuits & Systems, 2020, v. 15, n. 3, p. 1, doi. 10.29292/jics.v15i3.186
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- Article
Design of 100-V Super-Junction Trench Power MOSFET with Low On-Resistance.
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- ETRI Journal, 2012, v. 34, n. 1, p. 134, doi. 10.4218/etrij.12.0211.0251
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A 134-nW Single BJT Bandgap Voltage and Current Reference in 0.18-µm CMOS.
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- Circuits, Systems & Signal Processing, 2023, v. 42, n. 3, p. 1293, doi. 10.1007/s00034-022-02158-5
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- Article
Ionotronics Based on Horizontally Aligned Carbon Nanotubes.
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- Advanced Functional Materials, 2020, v. 30, n. 38, p. 1, doi. 10.1002/adfm.202003177
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- Article
Bipolar Junction Transistors: Van der Waals Bipolar Junction Transistor Using Vertically Stacked Two‐Dimensional Atomic Crystals (Adv. Funct. Mater. 17/2019).
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- Advanced Functional Materials, 2019, v. 29, n. 17, p. N.PAG, doi. 10.1002/adfm.201970113
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Van der Waals Bipolar Junction Transistor Using Vertically Stacked Two‐Dimensional Atomic Crystals.
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- Advanced Functional Materials, 2019, v. 29, n. 17, p. N.PAG, doi. 10.1002/adfm.201807893
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- Article