Works matching IS 15094553 AND DT 2007 AND VI 2007 AND IP 3
Results: 24
Monte Carlo method used for a prognosis of selected technological parameters.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 96, doi. 10.26636/jtit.2007.3.838
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- Article
Comparison of 4H-SiC and 6H-SiC MOSFET I-V characteristics simulated with Silvaco Atlas and Crosslight Apsys.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 93, doi. 10.26636/jtit.2007.3.837
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- Article
Composition and electrical properties of ultra-thin SiO<sub>x</sub>N<sub>y</sub> layers formed by rf plasma nitrogen implantation/plasma oxidation processes.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 9, doi. 10.26636/jtit.2007.3.820
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Paper Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 88, doi. 10.26636/jtit.2007.3.836
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Electron mobility and drain current in strained-Si MOSFET.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 84, doi. 10.26636/jtit.2007.3.835
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- Article
Arbitrary waveform generator for charge-pumping.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 78, doi. 10.26636/jtit.2007.3.834
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- Article
Ellipsometric spectroscopy studies of compaction and decompaction of Si-SiO<sub>2</sub> systems.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 44, doi. 10.26636/jtit.2007.3.828
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Investigations of electron emission from DLC thin films deposited by means of RF PCVD at various self-bias voltages.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 39, doi. 10.26636/jtit.2007.3.827
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Charge-pumping characterization of SOI devices fabricated by means of wafer bonding over pre-patterned cavities.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 61, doi. 10.26636/jtit.2007.3.831
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- Article
Electrical characterization of ISFETs.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 55, doi. 10.26636/jtit.2007.3.830
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Investigation of barrier height distributions over the gate area of Al-SiO<sub>2</sub>-Si structures.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 49, doi. 10.26636/jtit.2007.3.829
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- Article
Charge-pumping characterization of FILOX vertical MOSFETs.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 73, doi. 10.26636/jtit.2007.3.833
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- Article
Characterization of SOI MOSFETs by means of charge-pumping.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 67, doi. 10.26636/jtit.2007.3.832
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- Article
Correlation between electric parameters of carbon layers and their capacity for field emission.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 37, doi. 10.26636/jtit.2007.3.826
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- Article
The influence of annealing (900°C) of ultra-thin PECVD silicon oxynitride layers.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 16, doi. 10.26636/jtit.2007.3.821
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Oxidation kinetics of silicon strained by silicon germanium.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 30, doi. 10.26636/jtit.2007.3.824
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Applying shallow nitrogen implantation from rf plasma for dual gate oxide technology.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 3, doi. 10.26636/jtit.2007.3.819
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- Article
The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 25, doi. 10.26636/jtit.2007.3.823
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- Article
Comparison of composition ultra-thin silicon oxynitride layers' fabricated by PECVD and ultrashallow rf plasma ion implantation.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 20, doi. 10.26636/jtit.2007.3.822
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Influence of the deposition process parameters on electronic properties of BN films obtained by means of RF PACVD.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 33, doi. 10.26636/jtit.2007.3.825
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Optimization of an integrated optical crossbar in SOI technology for optical networks on chip.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 109, doi. 10.26636/jtit.2007.3.842
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Optical interconnections in future VLSI systems.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 105, doi. 10.26636/jtit.2007.3.841
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The influence of yield model parameters on the probability of defect occurrence.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 101, doi. 10.26636/jtit.2007.3.840
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Preface.
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- Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 1
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- Article