Works matching IS 12303402 AND DT 2010 AND VI 18 AND IP 3
Results: 22
History of HgTe-based photodetectors in Poland.
- Published in:
- Opto-Electronics Review, 2010, v. 18, n. 3, p. 284, doi. 10.2478/s11772-010-1025-8
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- Publication type:
- Article
Uncooled MWIR and LWIR photodetectors in Poland.
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- Opto-Electronics Review, 2010, v. 18, n. 3, p. 318, doi. 10.2478/s11772-010-1022-y
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- Publication type:
- Article
Nature of gallium deep centres in lead telluride based semiconductors.
- Published in:
- Opto-Electronics Review, 2010, v. 18, n. 3, p. 310, doi. 10.2478/s11772-010-1034-7
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- Publication type:
- Article
A novel approach to increase emission wavelength of InAs/GaAs quantum dots by using a quaternary capping layer.
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- Opto-Electronics Review, 2010, v. 18, n. 3, p. 246, doi. 10.2478/s11772-010-1032-9
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- Publication type:
- Article
Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe.
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- Opto-Electronics Review, 2010, v. 18, n. 3, p. 259, doi. 10.2478/s11772-010-1029-4
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- Publication type:
- Article
Energy-band diagrams and capacity-voltage characteristics of CdHgTe-based variband structures calculated with taking into account dependence of electron affinity on a composition.
- Published in:
- Opto-Electronics Review, 2010, v. 18, n. 3, p. 241, doi. 10.2478/s11772-010-1030-y
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- Publication type:
- Article
Detection of terahertz and sub-terahertz wave radiation based on hot-carrier effect in narrow-gap HgCdTe.
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- Opto-Electronics Review, 2010, v. 18, n. 3, p. 300, doi. 10.2478/s11772-010-1026-7
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- Publication type:
- Article
Mid infrared resonant cavity detectors and lasers with epitaxial lead-chalcogenides.
- Published in:
- Opto-Electronics Review, 2010, v. 18, n. 3, p. 231, doi. 10.2478/s11772-010-1028-5
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- Publication type:
- Article
Field effect transistors for terahertz detection - silicon versus III–V material issue.
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- Opto-Electronics Review, 2010, v. 18, n. 3, p. 225, doi. 10.2478/s11772-010-1018-7
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- Publication type:
- Article
High frequency response of near-room temperature LWIR HgCdTe heterostructure photodiodes.
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- Opto-Electronics Review, 2010, v. 18, n. 3, p. 277, doi. 10.2478/s11772-010-1035-6
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- Publication type:
- Article
Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage.
- Published in:
- Opto-Electronics Review, 2010, v. 18, n. 3, p. 295, doi. 10.2478/s11772-010-1039-2
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- Publication type:
- Article
Transport studies of MBE-grown InAs/GaSb superlattices.
- Published in:
- Opto-Electronics Review, 2010, v. 18, n. 3, p. 267, doi. 10.2478/s11772-010-1027-6
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- Publication type:
- Article
The study of HgCdTe MBE-grown structure with ion milling.
- Published in:
- Opto-Electronics Review, 2010, v. 18, n. 3, p. 338, doi. 10.2478/s11772-010-1020-0
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- Publication type:
- Article
Ion milling-assisted study of defect structure of HgCdTe films grown by liquid phase epitaxy.
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- Opto-Electronics Review, 2010, v. 18, n. 3, p. 328, doi. 10.2478/s11772-010-1016-9
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- Publication type:
- Article
320×256 HgCdTe IR FPA with a built-in shortwave cut-off filter.
- Published in:
- Opto-Electronics Review, 2010, v. 18, n. 3, p. 236, doi. 10.2478/s11772-010-1031-x
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- Publication type:
- Article
THz/sub-THz bolometer based on electron heating in a semiconductor waveguide.
- Published in:
- Opto-Electronics Review, 2010, v. 18, n. 3, p. 250, doi. 10.2478/s11772-010-1033-8
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- Publication type:
- Article
Capacitance-voltage characteristics of MIS-structures on the basis of graded-band MBE HgCdTe at passivation by epitaxially grown in situ CdTe.
- Published in:
- Opto-Electronics Review, 2010, v. 18, n. 3, p. 263, doi. 10.2478/s11772-010-1024-9
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- Publication type:
- Article
Foreword.
- Published in:
- 2010
- By:
- Publication type:
- Editorial
Control of acceptor doping in MOCVD HgCdTe epilayers.
- Published in:
- Opto-Electronics Review, 2010, v. 18, n. 3, p. 271, doi. 10.2478/s11772-010-1023-x
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- Publication type:
- Article
Linear HgCdTe IR FPA 288×4 with bidirectional scanning.
- Published in:
- Opto-Electronics Review, 2010, v. 18, n. 3, p. 332, doi. 10.2478/s11772-010-1021-z
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- Publication type:
- Article
Changes in 8–12 μm CdHgTe photodiode arrays caused by fast neutron irradiation.
- Published in:
- Opto-Electronics Review, 2010, v. 18, n. 3, p. 342, doi. 10.2478/s11772-010-1019-6
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- Publication type:
- Article
Stimulated and spontaneous far infra-red emission from uniaxially strained gapless HgCdTe.
- Published in:
- Opto-Electronics Review, 2010, v. 18, n. 3, p. 305, doi. 10.2478/s11772-010-1036-5
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- Publication type:
- Article