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Results: 22

History of HgTe-based photodetectors in Poland.
Published in:
Opto-Electronics Review, 2010, v. 18, n. 3, p. 284, doi. 10.2478/s11772-010-1025-8
By:
- Rogalski, A.
Publication type:
Article
Uncooled MWIR and LWIR photodetectors in Poland.
Published in:
Opto-Electronics Review, 2010, v. 18, n. 3, p. 318, doi. 10.2478/s11772-010-1022-y
By:
- Piotrowski, J.;
- Pawluczyk, J.;
- Piotrowski, A.;
- Gawron, W.;
- Romanis, M.;
- Kłos, K.
Publication type:
Article
Nature of gallium deep centres in lead telluride based semiconductors.
Published in:
Opto-Electronics Review, 2010, v. 18, n. 3, p. 310, doi. 10.2478/s11772-010-1034-7
By:
- Petrenko, T.L.;
- Plyatsko, S.V.
Publication type:
Article
A novel approach to increase emission wavelength of InAs/GaAs quantum dots by using a quaternary capping layer.
Published in:
Opto-Electronics Review, 2010, v. 18, n. 3, p. 246, doi. 10.2478/s11772-010-1032-9
By:
- Chowdhury, S.;
- Adhikary, S.;
- Halder, N.;
- Chakrabarti, S.
Publication type:
Article
High frequency response of near-room temperature LWIR HgCdTe heterostructure photodiodes.
Published in:
Opto-Electronics Review, 2010, v. 18, n. 3, p. 277, doi. 10.2478/s11772-010-1035-6
By:
- Kopytko, M.;
- Jóźwikowski, K.;
- Jóźwikowska, A.;
- Rogalski, A.
Publication type:
Article
Energy-band diagrams and capacity-voltage characteristics of CdHgTe-based variband structures calculated with taking into account dependence of electron affinity on a composition.
Published in:
Opto-Electronics Review, 2010, v. 18, n. 3, p. 241, doi. 10.2478/s11772-010-1030-y
By:
- Voitsekhovskii, A.V.;
- Gorn, D.I.;
- Nesmelov, S.N.;
- Kokhanenko, A.P.
Publication type:
Article
Detection of terahertz and sub-terahertz wave radiation based on hot-carrier effect in narrow-gap HgCdTe.
Published in:
Opto-Electronics Review, 2010, v. 18, n. 3, p. 300, doi. 10.2478/s11772-010-1026-7
By:
- Zabudsky, V.;
- Dobrovolsky, V.;
- Momot, N.
Publication type:
Article
The study of HgCdTe MBE-grown structure with ion milling.
Published in:
Opto-Electronics Review, 2010, v. 18, n. 3, p. 338, doi. 10.2478/s11772-010-1020-0
By:
- Pociask, M.M.
Publication type:
Article
Field effect transistors for terahertz detection - silicon versus III–V material issue.
Published in:
Opto-Electronics Review, 2010, v. 18, n. 3, p. 225, doi. 10.2478/s11772-010-1018-7
By:
- Knap, W.;
- Videlier, H.;
- Nadar, S.;
- Coquillat, D.;
- Dyakonova, N.;
- Teppe, F.;
- Bialek, M.;
- Grynberg, M.;
- Karpierz, K.;
- Lusakowski, J.;
- Nogajewski, K.;
- Seliuta, D.;
- Kašalynas, I.;
- Valušis, G.
Publication type:
Article
Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe.
Published in:
Opto-Electronics Review, 2010, v. 18, n. 3, p. 259, doi. 10.2478/s11772-010-1029-4
By:
- Voitsekhovskii, A.V.;
- Nesmelov, S.N.;
- Dzyadukh, S.M.;
- Varavin, V.S.;
- Dvoretskii, S.A.;
- Mikhailov, N.N.;
- Sidorov, Yu.G.;
- Yakushev, M.V.
Publication type:
Article
Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage.
Published in:
Opto-Electronics Review, 2010, v. 18, n. 3, p. 295, doi. 10.2478/s11772-010-1039-2
By:
- Sengupta, S.;
- Shah, S.Y.;
- Halder, N.;
- Chakrabarti, S.
Publication type:
Article
Stimulated and spontaneous far infra-red emission from uniaxially strained gapless HgCdTe.
Published in:
Opto-Electronics Review, 2010, v. 18, n. 3, p. 305, doi. 10.2478/s11772-010-1036-5
By:
- Gasan-Zade, S.G.;
- Strikha, M.V.;
- Shepelskii, G.A.
Publication type:
Article
Mid infrared resonant cavity detectors and lasers with epitaxial lead-chalcogenides.
Published in:
Opto-Electronics Review, 2010, v. 18, n. 3, p. 231, doi. 10.2478/s11772-010-1028-5
By:
- Zogg, H.;
- Rahim, M.;
- Khiar, A.;
- Fill, M.;
- Felder, F.;
- Quack, N.
Publication type:
Article
Ion milling-assisted study of defect structure of HgCdTe films grown by liquid phase epitaxy.
Published in:
Opto-Electronics Review, 2010, v. 18, n. 3, p. 328, doi. 10.2478/s11772-010-1016-9
By:
- Izhnin, I.I.;
- Denisov, I.A.;
- Smirnova, N.A.;
- Pociask, M.;
- Mynbaev, K.D.
Publication type:
Article
Linear HgCdTe IR FPA 288×4 with bidirectional scanning.
Published in:
Opto-Electronics Review, 2010, v. 18, n. 3, p. 332, doi. 10.2478/s11772-010-1021-z
By:
- Vasilyev, V.V.;
- Predein, A.V.;
- Varavin, V.S.;
- Mikhailov, N.N.;
- Dvoretsky, S.A.;
- Gumenjuk-Sichevska, J.V.;
- Golenkov, A.G.;
- Reva, V.P.;
- Sabinina, I.V.;
- Sidorov, Yu.G.;
- Susliakov, A.O.;
- Sizov, F.F.;
- Aseev, A.L
Publication type:
Article
Changes in 8–12 μm CdHgTe photodiode arrays caused by fast neutron irradiation.
Published in:
Opto-Electronics Review, 2010, v. 18, n. 3, p. 342, doi. 10.2478/s11772-010-1019-6
By:
- Lysiuk, I.O.;
- Gumenjuk-Sichevska, J.V.;
- Dvoretsky, S.A.;
- Varavin, V.S.
Publication type:
Article
Transport studies of MBE-grown InAs/GaSb superlattices.
Published in:
Opto-Electronics Review, 2010, v. 18, n. 3, p. 267, doi. 10.2478/s11772-010-1027-6
By:
- Szmulowicz, F.;
- Haugan, H.J.;
- Elhamri, S.;
- Brown, G.J.;
- Mitchel, W.C.
Publication type:
Article
Foreword.
Published in:
2010
By:
- Sizov, F.F.
Publication type:
Editorial
Control of acceptor doping in MOCVD HgCdTe epilayers.
Published in:
Opto-Electronics Review, 2010, v. 18, n. 3, p. 271, doi. 10.2478/s11772-010-1023-x
By:
- Madejczyk, P.;
- Piotrowski, A.;
- Kłos, K.;
- Gawron, W.;
- Rutkowski, J.;
- Rogalski, A.
Publication type:
Article
320×256 HgCdTe IR FPA with a built-in shortwave cut-off filter.
Published in:
Opto-Electronics Review, 2010, v. 18, n. 3, p. 236, doi. 10.2478/s11772-010-1031-x
By:
- Vasilyev, V.V.;
- Varavin, V.S.;
- Dvoretsky, S.A.;
- Marchishin, I.V.;
- Mikhailov, N.N.;
- Predein, A.V.;
- Remesnik, V.G.;
- Sabinina, I.V.;
- Sidorov, Yu.G.;
- Susliakov, A.O.
Publication type:
Article
THz/sub-THz bolometer based on electron heating in a semiconductor waveguide.
Published in:
Opto-Electronics Review, 2010, v. 18, n. 3, p. 250, doi. 10.2478/s11772-010-1033-8
By:
- Dobrovolsky, V.;
- Sizov, F.
Publication type:
Article
Capacitance-voltage characteristics of MIS-structures on the basis of graded-band MBE HgCdTe at passivation by epitaxially grown in situ CdTe.
Published in:
Opto-Electronics Review, 2010, v. 18, n. 3, p. 263, doi. 10.2478/s11772-010-1024-9
By:
- Voitsekhovskii, A.V.;
- Nesmelov, S.N.;
- Dzyadukh, S.M.;
- Varavin, V.S.;
- Dvoretskii, S.A.;
- Mikhailov, N.N.;
- Sidorov, Yu.G.;
- Yakushev, M.V.
Publication type:
Article